CJDA7 CJD50 NPN SILICON POWER TRANSISTOR DPAKz! DPAK CASE MAXIMUM RATINGS (Tc=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation (Tc=25C) Power Dissipation (Ta=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO Central . Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS ICEO Voe=150V (CJD47) IcEO VoE=300V (CJDS50) ICES VoE=350V (CJD47) IcES VoE=500V (CJD50) lEBO - Vep=5.0V BVCEO Ic=30mA (CJD47) BVCEO I=30mA (CJD50) VCE(SAT) I=1.0A, Ip=200mA VBE(ON) VGEH10V, Ic=1.0A hee VCEH=10V, Ic=300MA 116 applications. CJD47 CcJD50 UNITS 350 500 Vv 250 400 Vv 5.0 Vv 1.0 A 2.0 A 600 mA 15 Ww 1.56 WwW -65 to +150 o 8.33 C/W 80.1 SCN MIN MAX UNITS 200 pA 200 pA 100 HA 100 HA 1.0 mA 250 Vv 400 Vv 1.0 Vv 1.5 Vv 30 150 SYMBOL TEST CONDITIONS MIN MAX UNITS hee Voe=10V, Io=1.0A 10 fT Voe=10V, Io=200mA, f=2.0MHz 10 MHz hte Vop=10V, Io=200mA, f=1.0kKHz 25 All dimensions in inches (mm). TOP VIEW -250(6.35) 086(2.19) -265(6.73) 004(3.40) .018(0.45) .205(5.20) | -024(0.60) le (215(5.48) yosat 2h .235(5.97) F406 10) .368(9.35) hee ee . "409(10.40) + 1 2 3 ,020(0.51 nen +t 7 > .024(0.60) (0.45) -040(1.02) 4 :925(0.64) O2at0. 6 Lk (045(1.14) ona 181 (4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR R2 117