2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features * * Large current capacity (IC=2A). High breakdown voltage (VCEO400V). Specifications ( ) : 2SA1773 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)400 (--)400 V (--)5 V Collector Current VEBO IC (--)2 A Collector Current (Pulse) ICP (--)4 A 1 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg TC=25C V 15 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max ICBO IEBO VCB=(--)300V, IE=0A (--)1.0 Emitter Cutoff Current VEB=(--)4V, IC=0A (--)1.0 DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=(--)10V, IC=(--)100mA VCE=(--)10V, IC=(--)100mA Output Capacitance VCB=(--)30V, f=1MHz 40* Unit A A 200* (40)60 MHz (25)15 pF Continued on next page. * : The 2SA1773 / 2SC4616 are classified by 100mA hFE as follws: Rank C D E hFE 40 to 80 60 to 120 100 to 200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459 No.3399-1/5 2SA1773 / 2SC4616 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton IE=(--)10A, IC=0A See specified Test Circuit. Strage Time tstg tf See specified Test Circuit. (3.0)4.0 s See specified Test Circuit. (0.3)0.6 s Fall Time IC=(--)500mA, IB=(--)50mA IC=(--)500mA, IB=(--)50mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= V (--)1.0 V (--)400 V (--)400 V (--)5 V (0.12)0.085 Package Dimensions Package Dimensions unit : mm (typ) 7518-003 unit : mm (typ) 7003-003 s 2.3 2 0.8 7.5 0.8 1.6 0.6 1 0.5 2.3 2.3 2 SANYO : TP 0.5 3 0 to 0.2 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.5 0.85 1.2 1.2 0.85 0.7 0.5 1.5 5.5 5.5 7.0 4 7.0 4 2.3 6.5 5.0 0.5 1.5 6.5 5.0 1 (--)1.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT IB2 VR 50 OUTPUT RB + 100F VBE=--5V RL + 470F VCE=150V IC=10IB1= --10IB2=500mA RL=300, RB=20, at IC=500mA For PNP, the polarity is reversed. No.3399-2/5 2SA1773 / 2SC4616 IC -- VCE --200 IC -- VCE 200 2SA1773 2SC4616 --1.6mA --1.4mA --120 --1.2mA --1.0mA --80 --0.8mA --0.6mA --0.4mA --40 0 --4 --8 --12 0.6mA 0.4mA 40 --16 0 --20 0 4 8 12 16 2SC4616 VCE=10V --0.8 --25 C 5C --1.0 --0.6 1.4 1.2 1.0 0.8 0.6 --0.4 0.4 --0.2 0.2 --25C --1.2 1.6 25C Collector Current, IC -- A 25C --1.4 ITR04606 IC -- VBE 2.0 --1.6 20 Collector-to-Emitter Voltage, VCE -- V ITR04605 1.8 Ta= 7 Collector Current, IC -- A 0.8mA 80 0.2mA IC -- VBE 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V --1.4 0 Ta=75C 25C 7 --25C 3 2 10 0.8 1.0 1.2 2SC4616 VCE=10V 2 Ta=75C 25C 7 --25C 5 3 2 10 7 7 5 5 3 1.4 ITR04608 hFE -- IC 100 5 0.6 3 DC Current Gain, hFE 100 0.4 Base-to-Emitter Voltage, VBE -- V 2SA1773 VCE=--10V 2 0.2 ITR04607 hFE -- IC 3 DC Current Gain, hFE 1.0mA IB=0mA 0 3 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- 5 7--1000 2 3 ITR04609 mA 3 2 100 7 5 3 2 10 7 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 3 ITR04610 f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 2SA1773 VCE=--10V 5 Collector Current, IC -- mA f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 1.2mA 120 --0.2mA 2SA1773 VCE=--10V --1.8 1.4mA IB=0mA Collector-to-Emitter Voltage, VCE -- V --2.0 160 1.6mA Ta=75 C 0 1.8 mA --1.8mA --160 Collector Current, IC -- mA Collector Current, IC -- mA --2.0mA 2SC4616 VCE=10V 2 100 7 5 3 2 10 7 5 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 3 5 7 --1000 ITR04611 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA 3 5 7 1000 ITR04612 No.3399-3/5 2SA1773 / 2SC4616 SW Time -- IC 10 7 5 tst g 3 2 1.0 7 5 tf 3 2 to n 0.1 7 5 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 2 1.0 7 5 tf 3 to n 2 0.1 3 5 2 3 5 7 100 2 3 5 Collector Current, IC -- mA 7 1000 2 3 ITR04614 VCE(sat) -- IC 3 2SA1773 IC / IB=10 2SC4616 IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 10 ITR04613 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 3 7 --10 --1.0 7 5 3 2 25C --0.1 Ta=75C 7 --25C 5 1.0 7 5 3 C 25 2 Ta=75C 0.1 --25C 7 5 3 3 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 3 7 --1000 5 3 2 --1.0 Ta=--25C 7 75C 5 7 25C 2 10 3 5 7 100 2 3 5 7 1000 ITR04616 Collector Current, IC -- mA VBE(sat) -- IC 10 2SC4616 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SA1773 IC / IB=10 7 5 ITR04615 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SC4616 VCC=150V 10IB1=--10IB2=IC tst g 10 7 5 7 5 3 5 3 2 1.0 Ta=--25C 7 75C 5 25C 3 3 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7 --1000 3 7 7 5 3 2 10 3 5 7 100 2 3 5 7 1000 ITR04618 Cob -- VCB 3 2SC4616 f=1MHz 2 Output Capacitance, Cob -- pF 100 2 10 Collector Current, IC -- mA 2SA1773 f=1MHz 2 5 ITR04617 Cob -- VCB 3 Output Capacitance, Cob -- pF SW Time -- IC 2 2SA1773 VCC=--150V 10IB1=--10IB2=IC Switching Time, SW Time -- s Switching Time, SW Time -- s 2 100 7 5 3 2 10 7 5 7 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- 7 --100 2 V ITR04619 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR04620 Collector-to-Base Voltage, VCB -- V No.3399-4/5 2SA1773 / 2SC4616 ASO ICP= --4A IC= --2A ms era n( 3 2 C ) C 5 =2 Tc 25 3 2 ) --10 7 5 Tc=25C Single pulse --1.0 --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 era tio 10 7 5 3 2 n( Ta = 25 Collector-to-Emitter Voltage, VCE -- V ITR04621 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0.8 No he at 0.6 sin k 0.4 0.2 5 7 10 2 3 5 7 100 2 3 5 7 IT14853 PC -- Tc 18 2SA1773 / 2SC4616 1.0 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.2 C ) Tc=25C 1.0 Single pulse 0.1 2 3 5 7 1.0 5 op 100 7 5 3 2 ) C 25 c= (T Ta = DC ion tio --100 7 5 1000 7 5 3 2 t era op op 2SC4616 DC DC DC 3 2 n( tio era op Collector Current, IC -- mA s 10 --1000 7 5 ICP=4A IC=2A s 1m s m 10 1m 3 2 ASO 7 5 3 2 2SA1773 Collector Current, IC -- mA 7 5 2SA1773 / 2SC4616 16 15 14 12 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR04623 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 ITR04624 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice. PS No.3399-5/5