SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - OCTOBER 1995
FEATURES
* 240 Volt VDS
*R
DS(on)= 8.8Ω typical at VGS=-3.5V
* Low threshold and Fast switching
APPLICATIONS
* Electronic hook switches
* Telecoms and Battery powered equipment
COMPLEMENTARY TYPE - ZVN4424G
PARTMARKING DETAIL - ZVP4424
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -240 V
Continuous Drain Current at Tamb
=25°C ID-480 mA
Pulsed Drain Current IDM -1.0 A
Gate Source Voltage VGS ± 40 V
Power Dissipation at Tamb
=25°C Ptot 2.5 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ZVP4424G
D
D
S
G
3 - 438
ZVP4424G
ZVP4424G
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -240 V ID
=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -0.7 -1.4 -2.0 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS
=± 40V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -10
-100 µA
µA
VDS=-240V, VGS
=0V
VDS=-190V, VGS
=0V, T=125°C
On-State Drain Current ID(on) -0.75 -1.0 A VDS=-10V, VGS
=-10V
Static Drain-Source
On-State Resistance
RDS(on) 7.1
8.8
9
11 Ω
ΩVGS
=-10V, ID
=-200mA
VGS
=-3.5V, ID
=-100mA
Forward
Transconductance (1) (2)
gfs 125 mS VDS=-10V,ID
=-0.2A
Input Capacitance (2) Ciss 100 200 pF
VDS=-25V, VGS
=0V, f=1MHz
Common Source Output
Capacitance (2)
Coss 18 25 pF
Reverse Transfer
Capacitance (2)
Crss 515pF
Turn-On Delay Time (2)(3) td(on) 815ns
VDD
≈−50V, ID =-0.25A,
VGEN
=-10V
Rise Time (2)(3) tr815ns
Turn-Off Delay Time (2)(3) td(off) 26 40 ns
Fall Time (2)(3) tf20 30 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 4403 - 439
TYPICAL CHARACTERISTICS
0-2-4-6-8-10
-1.2
Transfer Characteristics
V
DS
=-10V
300µs Pulsed Test
I- Drain Current (Amps)
V
GS
- Gate Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
0-2 -4 -6 -8 -10
-1.2
Saturation Characteristics
I- Drain Current (Amps)
V
DS
- Drain Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
300µs Pulsed Test
V
GS
=-10V
-5V
-4V
-3V
-2.5V
-2V
Transconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
300
0 -0.2 -0.4 -0.6 -0.8 -1.0
400
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
0-2-4-6
300µs Pulsed Test
V
DS
=-10V
300µs Pulsed Test
V
DS
=-10V
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Normalised Rand V
-50 -25 0 25 50 75 125
100 150
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
On-resistance vs Drain Current
I
D-
Drain Current (Amps)
RDS(on)-Drain Source On Resistance Ω
-2.5V
-3V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-10V
10
1
100
-0.01 -0.1 -10
V
GS
=-2V
300µs Pulsed Test
-1
I
D
=0.2A
0.2
0.4
0.0
200
100
0
300
400
200
100
0
C
rss
C
oss
TYPICAL CHARACTERISTICS
01 45
-6
-8
-10
-14
-16
-12
-4
-2
0
Q-Gate Charge (nC)
200
150
100
0
50
250
300
-0.01 -1 -10 -100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Note:V
GS=
0V
C
iss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
V
DS
= -20V
-50V
-100V
Note:I
D=-
0.25A
32
ZVP4424G
ZVP4424G
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -240 V ID
=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -0.7 -1.4 -2.0 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS
=± 40V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -10
-100 µA
µA
VDS=-240V, VGS
=0V
VDS=-190V, VGS
=0V, T=125°C
On-State Drain Current ID(on) -0.75 -1.0 A VDS=-10V, VGS
=-10V
Static Drain-Source
On-State Resistance
RDS(on) 7.1
8.8
9
11 Ω
ΩVGS
=-10V, ID
=-200mA
VGS
=-3.5V, ID
=-100mA
Forward
Transconductance (1) (2)
gfs 125 mS VDS=-10V,ID
=-0.2A
Input Capacitance (2) Ciss 100 200 pF
VDS=-25V, VGS
=0V, f=1MHz
Common Source Output
Capacitance (2)
Coss 18 25 pF
Reverse Transfer
Capacitance (2)
Crss 515pF
Turn-On Delay Time (2)(3) td(on) 815ns
VDD
≈−50V, ID =-0.25A,
VGEN
=-10V
Rise Time (2)(3) tr815ns
Turn-Off Delay Time (2)(3) td(off) 26 40 ns
Fall Time (2)(3) tf20 30 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 4403 - 439
TYPICAL CHARACTERISTICS
0-2-4-6-8-10
-1.2
Transfer Characteristics
V
DS
=-10V
300µs Pulsed Test
I- Drain Current (Amps)
V
GS
- Gate Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
0-2 -4 -6 -8 -10
-1.2
Saturation Characteristics
I- Drain Current (Amps)
V
DS
- Drain Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
300µs Pulsed Test
V
GS
=-10V
-5V
-4V
-3V
-2.5V
-2V
Transconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
300
0 -0.2 -0.4 -0.6 -0.8 -1.0
400
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
0-2-4-6
300µs Pulsed Test
V
DS
=-10V
300µs Pulsed Test
V
DS
=-10V
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Normalised Rand V
-50 -25 0 25 50 75 125
100 150
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
On-resistance vs Drain Current
I
D-
Drain Current (Amps)
RDS(on)-Drain Source On Resistance Ω
-2.5V
-3V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-10V
10
1
100
-0.01 -0.1 -10
V
GS
=-2V
300µs Pulsed Test
-1
I
D
=0.2A
0.2
0.4
0.0
200
100
0
300
400
200
100
0
C
rss
C
oss
TYPICAL CHARACTERISTICS
01 45
-6
-8
-10
-14
-16
-12
-4
-2
0
Q-Gate Charge (nC)
200
150
100
0
50
250
300
-0.01 -1 -10 -100
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Note:V
GS=
0V
C
iss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
V
DS
= -20V
-50V
-100V
Note:I
D=-
0.25A
32
