AP7893 - American Power Conversion

Freescale Semiconductor

Data Sheet: Technical Data

Document Number: IMX51AEC

Rev. 6, 10/2012

IMX51A

Package Information

Plastic Package

Case 2017 19 x 19 mm, 0.8 mm pitch

Ordering Information

See Ta bl e 1 on page 2 for ordering information.

1 Introduction

The MCIMX51A (i.MX51A) Automotive Infotainment

Processor represents Freescale Semiconductor’s latest

addition to a growing family of multimedia focused

products offering high performance processing with a

high degree of functional integration, aimed at the

growing automotive infotainment market. This device

includes two graphics processors, 720p video

processing, dual display, and many I/Os.

The i.MX51A processor features Freescale’s advanced

implementation of the ARM Cortex A8™ core, targeting

speeds up to 600 MHz with 200 MHz I/O bus clock

DDR2 and mobile DDR. This device is well-suited for

graphics rendering for HMI and navigation, high

performance speech processing with large databases,

video processing and display, audio playback and

ripping, and many other applications.

i.MX51A Automotive and

Infotainment Applications

Processors

1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 2

1.2. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2. Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1. Special Signal Considerations . . . . . . . . . . . . . . . 11

3. IOMUX Configuration for Boot Media . . . . . . . . . . . . . . . 13

3.1. NAND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3.2. SD/MMC IOMUX Pin Configuration . . . . . . . . . . . 14

3.3. I2C IOMUX Pin Configuration . . . . . . . . . . . . . . . . 14

3.4. eCSPI/CSPI IOMUX Pin Configuration . . . . . . . . 15

3.5. Wireless External Interface Module (WEIM) . . . . 15

3.6. UART IOMUX Pin Configuration . . . . . . . . . . . . . 15

3.7. USB-OTG IOMUX Pin Configuration . . . . . . . . . . 15

4. Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 16

4.1. Chip-Level Conditions . . . . . . . . . . . . . . . . . . . . . 16

4.2. Supply Power-Up/Power-Down Requirements and

Restrictions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

4.3. I/O DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . 22

4.4. Output Buffer Impedance Characteristics . . . . . . 29

4.5. I/O AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . 33

4.6. Module Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

4.7. External Peripheral Interfaces . . . . . . . . . . . . . . . 72

5. Package Information and Contact Assignments . . . . . 151

5.1. 19 x 19 mm Package Information . . . . . . . . . . . . 151

5.2. 19 x 19 mm, 0.8 Pitch Ball Map . . . . . . . . . . . . . 169

6. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

2Freescale Semiconductor

Introduction

Features of the i.MX51A processor include the following:

• Smart Speed Technology—The i.MX51A device has power management throughout the IC that

enables the rich suite of multimedia feature and peripherals to achieve minimum power

consumption in both active and various low power modes. Smart Speed Technology enables the

designer to deliver a feature-rich product that requires levels of power that are far less than industry

expectations.

• Multimedia—The multimedia performance of the ARM Cortex A8 is enhanced with a multi-level

cache system, a Multi-standard Hardware Video CODECs, autonomous image processing unit,

multi-standard audio CODECs, Neon (an advanced SIMD, 32 bit single-precision floating point

support and vector floating point co-processor), and a programmable smart DMA controller.

• Powerful Graphics Acceleration—The i.MX51A processor has an integrated Graphics Processing

Unit which includes an OpenGl 2.0 GPU that provides 27Mtri/sec, 166Mpix/s, and 664Mpix/s

z-plane performance. Silicon version 2.0 of the i.MX51A device includes an independent OpenVG

GPU operating at166Mpix/s.

• Interface Flexibility—The i.MX51A processor supports connections to all popular types of

external memories: mobile DDR, DDR2, PSRAM, NOR Flash, NAND Flash (MLC and SLC), and

OneNAND (managed NAND). The i.MX51A processor also includes a rich multimedia suite of

interfaces: LCD controller for two displays, CMOS sensor interface, High-Speed USB On-The-Go

plus three High-Speed USB hosts, high-speed MMC/SDIO, Fast Ethernet controller, UART, I2C,

I2S (SSI), and others.

1.1 Ordering Information

Table 1 provides the ordering information.

Table 1. Ordering Information

Part Number Mask Set Features

Junction

Temperature

Range (°C)

Package1

1Case 2017 and Case 2058 are RoHS compliant, lead-free, MSL = 3.

MCIMX514AJM6C M77X No hardware video codecs –40 to 125 19 x 19 mm, 0.8 mm pitch BGA

Case 2017

MCIMX516AJM6C M77X Full specification –40 to 125 19 x 19 mm, 0.8 mm pitch BGA

Case 2017

Introduction

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 3

1.2 Block Diagram

Figure 1 shows the functional modules of the processor.

Figure 1. Functional Block Diagram

Application Processor Domain (AP)

External

Memory I/F

Smart DMA

(SDMA)

SDMA Peripherals

AP Peripherals

ARM Cortex A8

Internal

RAM

DDR

Memory

NOR/Nand

Flash

Audio/Power

Management

ARM Cortex A8

L1 I/D cache

SSI

eSDHC (4)

SPBA

eCSPI

(1 of 2)

UART

SIM

Camera 1

Platform

P-ATA

RF/IF ICs SIM

Bluetooth WLAN USB-OTG MMC/SDIO Keypad

Neon and VFP

L2 cache

ETM, CTI0,1

XVR

JTAG IrDA

XVR Access.

Conn.

Video

LCD Display 2

LCD Display 1

Camera 2

Proc. Unit

(VPU)

Timers

CSPI

UART (3)

GPT

PWM (2)

EPIT (2)

GPIOx32 (4)

WDOG (2)

1-WIRE

C(2),HSI

IOMUXC

IIM

AUDMUX

KPP

SJC

AXI and AHB Switch Fabric

Boot

ROM

SSI (3)

RTIC

SCC

SRTC

CSU

Fuse Box

Clock and Reset

PLL (3)

CCM

GPC

SRC

Debug

DAP

TPIU

Graphics

TV-Out

TV Encoder

FIRI

Memory

SAHARA

Lite

Security

TZIC

USB PHY

SPDIF Tx

Image Processing

Subsystem

Battery Ctrl

Device

USB

Dev/Host

GPS

Ethernet

USB OTG +

3 HS Ports

Digital

Audio ATA HDD

CTI (2)

eCSPI

)

XTALOSC

(128 Kbytes)

CAMP (2)

FEC

3D Graphics

Proc Unit

(GPU)

2D Graphics

Proc Unit

(GPU2D)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

4Freescale Semiconductor

Features

2Features

The i.MX51A processor contains a large number of digital and analog modules that are described in

Table 2.

Table 2. i.MX51A Digital and Analog Modules

Block

Mnemonic Block Name Subsystem Brief Description

1-WIRE 1-Wire

Interface

Connectivity

Peripherals

1-Wire support provided for interfacing with an on-board EEPROM, and smart

battery interfaces, for example: Dallas DS2502.

ARM

Cortex™-A8

ARM

Cortex™-A8

Platform

ARM The ARM Cortex™-A8 Core Platform consists of the ARM Cortex™-A8

processor version r2p5 (with TrustZone) and its essential sub-blocks. It contains

the Level 2 Cache Controller, 32 Kbyte L1 instruction cache, 32 Kbyte L1 data

cache, and a 256 Kbyte L2 cache. The platform also contains an Event Monitor

and Debug modules. It also has a NEON co-processor with SIMD media

processing architecture, register file with 32 ×64-bit general-purpose registers,

an Integer execute pipeline (ALU, Shift, MAC), dual, single-precision floating

point execute pipeline (FADD, FMUL), load/store and permute pipeline and a

Non-Pipelined Vector Floating Point (VFP) co-processor (VFPv3).

Audio

Subsystem

Audio

Subsystem

Multimedia

Peripherals

The elements of the audio subsystem are three Synchronous Serial Interfaces

(SSI1-3), a Digital Audio Mux (AUDMUX), and Digital Audio Out (SPDIF TX).

See the specific interface listings in this table.

AUDMUX Digital Audio

Mux

Multimedia

Peripherals

The AUDMUX is a programmable interconnect for voice, audio, and

synchronous data routing between host serial interfaces (for example, SSI1,

SSI2, and SSI3) and peripheral serial interfaces (audio and voice codecs). The

AUDMUX has seven ports (three internal and four external) with identical

functionality and programming models. A desired connectivity is achieved by

configuring two or more AUDMUX ports.

CCM

GPC

SRC

Clock Control

Module

Global Power

Controller

System Reset

Controller

Clocks,

Resets, and

Power Control

These modules are responsible for clock and reset distribution in the system,

and also for system power management. The modules include three PLLs and

a Frequency Pre-Multiplier (FPM).

CSPI-1,

eCSPI-2

eCSPI-3

Configurable

SPI,

Enhanced

CSPI

Connectivity

Peripherals

Full-duplex enhanced Synchronous Serial Interface, with data rate up to

66.5 Mbit/s (for eCSPI, master mode). It is configurable to support Master/Slave

modes, four chip selects to support multiple peripherals.

CSU Central

Security Unit

Security The Central Security Unit (CSU) is responsible for setting comprehensive

security policy within the i.MX51 platform, and for sharing security information

between the various security modules. The Security Control Registers (SCR) of

the CSU are set during boot time by the High Assurance Boot (HAB) code and

are locked to prevent further writing.

Debug

System

Debug

System

Control

The Debug System provides real-time trace debug capability of both instructions

and data. It supports a trace protocol that is an integral part of the ARM Real

Time Debug solution (RealView). Real-time tracing is controlled by specifying a

set of triggering and filtering resources, which include address and data

comparators, cross-system triggers, counters, and sequencers.

Features

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 5

EMI External

Memory

Interface

Connectivity

Peripherals

The EMI is an external and internal memory interface. It performs arbitration

between multi-AXI masters to multi-memory controllers, divided into four major

channels: fast memories (Mobile DDR, DDR2) channel, slow memories

(NOR-FLASH/PSRAM/NAND-FLASH and so on) channel, internal memory

(RAM, ROM) channel and graphical memory (GMEM) Channel.

In order to increase the bandwidth performance, the EMI separates the buffering

and the arbitration between different channels so parallel accesses can occur.

By separating the channels, slow accesses do not interfere with fast accesses.

EMI features:

• 64-bit and 32-bit AXI ports

• Enhanced arbitration scheme for fast channel, including dynamic master

priority, and taking into account which pages are open or closed and what

type (Read or Write) was the last access

• Flexible bank interleaving

• Supports 16/32-bit Mobile DDR up to 200 MHz SDCLK (mDDR400)

• Supports 16/32-bit (Non-Mobile) DDR2 up to 200 MHz SDCLK (DDR2-400)

• Supports up to 2 Gbit Mobile DDR memories

• Supports 16-bit (in muxed mode only) PSRAM memories (sync and async

operating modes), at slow frequency, for debugging purposes

• Supports 32-bit NOR-Flash memories (only in muxed mode), at slow

frequencies for debugging purposes

• Supports 4/8-ECC, page sizes of 512 Bytes, 2 Kbytes and 4 Kbytes

• NAND-Flash (including MLC)

• Multiple chip selects

• Enhanced Mobile DDR memory controller, supporting access latency hiding

• Supports watermarking for security (Internal and external memories)

• Supports Samsung OneNAND™ (only in muxed I/O mode)

EPIT-1

EPIT-2

Enhanced

Periodic

Interrupt

Timer

Peripherals

Each EPIT is a 32-bit “set and forget” timer that starts counting after the EPIT is

enabled by software. It is capable of providing precise interrupts at regular

intervals with minimal processor intervention. It has a 12-bit prescaler for division

of input clock frequency to get the required time setting for the interrupts to occur,

and counter values can be programmed on the fly.

eSDHC-1

eSDHC-2

eSDHC-3

Enhanced

Multi-Media

Card/

Secure Digital

Host

Controller

Connectivity

Peripherals

The features of the eSDHC module, when serving as host, include the following:

• Conforms to SD Host Controller Standard Specification version 2.0

• Compatible with the MMC System Specification version 4.2

• Compatible with the SD Memory Card Specification version 2.0

• Compatible with the SDIO Card Specification version 1.2

• Designed to work with SD Memory, miniSD Memory, SDIO, miniSDIO, SD

Combo, MMC and MMC RS cards

• Configurable to work in one of the following modes:

—SD/SDIO 1-bit, 4-bit

—MMC 1-bit, 4-bit, 8-bit

• Full-/high-speed mode

• Host clock frequency variable between 32 kHz to 52 MHz

• Up to 200 Mbps data transfer for SD/SDIO cards using four parallel data lines

• Up to 416 Mbps data transfer for MMC cards using eight parallel data lines

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

6Freescale Semiconductor

Features

eSDHC-4

(muxed with

P-ATA)

Enhanced

Multi-Media

Card/

Secure Digital

Host

Controller

Connectivity

Peripherals

Can be configured as eSDHC (see above) and is muxed with the P-ATA

interface.

FEC Fast Ethernet

Controller

Connectivity

Peripherals

The Ethernet Media Access Controller (MAC) is designed to support both

10 Mbps and 100 Mbps ethernet/IEEE Std 802.3™ networks. An external

transceiver interface and transceiver function are required to complete the

interface to the media.

FIRI Fast

Infra-Red

Interface

Connectivity

Peripherals

Fast Infra-Red Interface

GPIO-1

GPIO-2

GPIO-3

GPIO-4

General

Purpose I/O

Modules

System

Control

Peripherals

These modules are used for general purpose input/output to external ICs. Each

GPIO module supports up to 32 bits of I/O.

GPT General

Purpose

Timer

Peripherals

Each GPT is a 32-bit “free-running” or “set and forget” mode timer with a

programmable prescaler and compare and capture register. A timer counter

value can be captured using an external event, and can be configured to trigger

a capture event on either the leading or trailing edges of an input pulse. When

the timer is configured to operate in “set and forget” mode, it is capable of

providing precise interrupts at regular intervals with minimal processor

intervention. The counter has output compare logic to provide the status and

interrupt at comparison. This timer can be configured to run either on an external

clock or on an internal clock.

GPU Graphics

Processing

Unit

Multimedia

Peripherals

The GPU provides hardware acceleration for 2D and 3D graphics

algorithms with sufficient processor power to run desk-top quality

interactive graphics applications on displays up to HD720

resolution. It supports color representation up to 32 bits per pixel.

The GPU with its 128 KByte memory enables high performance mobile 3D and

2D vector graphics at rates up to 27 Mtriangles/sec, 166 Mpixels/sec,

664 Mpixels/sec (Z).

GPU2D Graphics

Processing

Unit-2D Ver. 1

Multimedia

Peripherals

The GPU2D provides hardware acceleration for 2D graphic

algorithms with sufficient processor power to run desk-top quality

interactive graphics applications on displays up to HD720 resolution.

I2C-1

I2C-2

HS-I2C

I2C Interface Connectivity

Peripherals

I2C provides serial interface for controlling peripheral devices. Data rates of up

to 400 Kbps are supported by two of the I2C ports. Data rates of up to 3.4 Mbps

(I2C Specification v2.1) are supported by the HS-I2C.

Note: See the errata for the HS-I2C in the i.MX51 Chip Errata. The two standard

I2C modules have no errata.

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

Features

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 7

IIM IC

Identification

Module

Security The IC Identification Module (IIM) provides an interface for reading,

programming, and/or overriding identification and control information stored in

on-chip fuse elements. The module supports electrically programmable poly

fuses (e-Fuses). The IIM also provides a set of volatile software-accessible

signals that can be used for software control of hardware elements not requiring

non-volatility. The IIM provides the primary user-visible mechanism for

interfacing with on-chip fuse elements. Among the uses for the fuses are unique

chip identifiers, mask revision numbers, cryptographic keys, JTAG secure mode,

boot characteristics, and various control signals requiring permanent

non-volatility. The IIM also provides up to 28 volatile control signals. The IIM

consists of a master controller, a software fuse value shadow cache, and a set

of registers to hold the values of signals visible outside the module.

IOMUXC IOMUX

Control

System

Control

Peripherals

This module enables flexible I/O multiplexing. Each I/O pad has default as well

as several alternate functions. The alternate functions are software configurable.

IPU Image

Processing

Unit

Multimedia

Peripherals

IPU enables connectivity to displays and image sensors, relevant processing

and synchronization. It supports two display ports and two camera ports,

through the following interfaces.

• Legacy Interfaces

• Analog TV interfaces (through a TV encoder bridge)

The processing includes:

• Support for camera control

• Image enhancement: color adjustment and gamut mapping, gamma

correction and contrast enhancement, sharpening and noise reduction

• Video/graphics combining

• Support for display backlight reduction

• Image conversion—resizing, rotation, inversion and color space conversion

• Synchronization and control capabilities, allowing autonomous operation.

• Hardware de-interlacing support

KPP Keypad Port Connectivity

Peripherals

The KPP supports an 8 ×8 external keypad matrix. The KPP features are as

follows:

• Open drain design

• Glitch suppression circuit design

• Multiple keys detection

• Standby key press detection

P-ATA (Muxed

with

eSDHC-4

Parallel ATA Connectivity

Peripherals

The P-ATA block is an AT attachment host interface. Its main use is to interface

with hard disc drives and optical disc drives. It interfaces with the ATA-5

(UDMA-4) compliant device over a number of ATA signals. It is possible to

connect a bus buffer between the host side and the device side. This is muxed

with eSDHC-4 interfaces.

PWM-1

PWM-2

Pulse Width

Modulation

Connectivity

Peripherals

The pulse-width modulator (PWM) has a 16-bit counter and is optimized to

generate sound from stored sample audio images. It can also generate tones.

The PWM uses 16-bit resolution and a 4 x 16 data FIFO to generate sound.

RAM

128 Kbytes

Internal RAM Internal

Memory

Unified RAM, can be split between Secure RAM and Non-Secure RAM

ROM

36 Kbytes

Boot ROM Internal

Memory

Supports secure and regular Boot Modes

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

8Freescale Semiconductor

Features

RTIC Real Time

Integrity

Checker

Security Protecting read-only data from modification is one of the basic elements in

trusted platforms. The Run-Time Integrity Checker v3 (RTICv3) module, is a data

monitoring device responsible for ensuring that memory content is not corrupted

during program execution. The RTICv3 mechanism periodically checks the

integrity of code or data sections during normal OS run-time execution without

interfering with normal operation. The RTICv3’s purpose is to ensure the integrity

of the peripheral memory contents, protect against unauthorized external

memory elements replacement, and assist with boot authentication.

SAHARA Lite SAHARA

security

accelerator

Lite

Security SAHARA (Symmetric/Asymmetric Hashing and Random Accelerator) is a

security co-processor. It implements symmetric encryption algorithms, (AES,

DES, 3DES, and RC4), public key algorithms, hashing algorithms (MD5, SHA-1,

SHA-224, and SHA-256), and a hardware random number generator. It has a

slave IP bus interface for the host to write configuration and command

information, and to read status information. It also has a DMA controller, with an

AHB bus interface, to reduce the burden on the host to move the required data

to and from memory.

SCC Security

Controller

Security The Security Controller is a security assurance hardware module designed to

safely hold sensitive data such as encryption keys, digital right management

(DRM) keys, passwords, and biometrics reference data. The SCC monitors the

system’s alert signal to determine if the data paths to and from it are

secure—that is, cannot be accessed from outside of the defined security

perimeter. If not, it erases all sensitive data on its internal RAM. The SCC also

features a Key Encryption Module (KEM) that allows non-volatile (external

memory) storage of any sensitive data that is temporarily not in use. The KEM

utilizes a device-specific hidden secret key and a symmetric cryptographic

algorithm to transform the sensitive data into encrypted data.

SDMA Smart Direct

Memory

Access

System

Control

Peripherals

The SDMA is multi-channel flexible DMA engine. It helps in maximizing system

performance by off loading various cores in dynamic data routing.

The SDMA features list is as follows:

• Powered by a 16-bit instruction-set micro-RISC engine

• Multi-channel DMA supports up to 32 time-division multiplexed DMA channels

• 48 events with total flexibility to trigger any combination of channels

• Memory accesses including linear, FIFO, and 2D addressing

• Shared peripherals between ARM Cortex™-A8 and SDMA

• Very fast context-switching with two-level priority-based preemptive

multi-tasking

• DMA units with auto-flush and prefetch capability

• Flexible address management for DMA transfers (increment, decrement, and

no address changes on source and destination address)

• DMA ports can handle unit-directional and bi-directional flows (copy mode)

• Up to 8-word buffer for configurable burst transfers for EMI

• Support of byte-swapping and CRC calculations

• A library of scripts and API are available

SIM Subscriber

Identity

Module

Interface

Connectivity

Peripherals

The SIM is an asynchronous interface with additional features for allowing

communication with Smart Cards conforming to the ISO 7816 specification. The

SIM is designed to facilitate communication to SIM cards or pre-paid phone

cards.

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

Features

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 9

SJC Secure JTAG

Interface

System

Control

Peripherals

JTAG manipulation is a known hacker’s method of executing unauthorized

program code, getting control over secure applications, and running code in

privileged modes. The JTAG port provides a debug access to several hardware

blocks including the ARM processor and the system bus.

The JTAG port must be accessible during platform initial laboratory bring-up,

manufacturing tests and troubleshooting, as well as for software debugging by

authorized entities. However, in order to properly secure the system,

unauthorized JTAG usage should be strictly forbidden.

In order to prevent JTAG manipulation while allowing access for manufacturing

tests and software debugging, the i.MX51A processor incorporates a

mechanism for regulating JTAG access. The i.MX51A Secure JTAG Controller

provides four different JTAG security modes that can be selected via e-fuse

configuration.

SPBA Shared

Peripheral

Bus Arbiter

System

Control

Peripherals

SPBA (Shared Peripheral Bus Arbiter) is a two-to-one IP bus interface (IP bus)

arbiter.

SPDIF Sony Philips

Digital

Interface

Multimedia

Peripherals

A standard digital audio transmission protocol developed jointly by the Sony and

Philips corporations. Only the transmitter functionality is supported.

SRTC Secure Real

Time Clock

Security The SRTC incorporates a special System State Retention Register (SSRR) that

stores system parameters during system shutdown modes. This register and all

SRTC counters are powered by dedicated supply rail NVCC_SRTC_POW. The

NVCC_SRTC_POW can be energized even if all other supply rails are shut

down. The power for this block comes from NVCC_SRTC_POW supply. When

this supply is driven by the MC13892 power management controller, this block

can be power backed up via the coin-cell feature of the MC13892.This register

is helpful for storing warm boot parameters. The SSRR also stores the system

security state. In case of a security violation, the SSRR mark the event (security

violation indication).

SSI-1 I2S/SSI/AC97

Interface

Connectivity

Peripherals

The SSI is a full-duplex synchronous interface used on the i.MX51A processor

to provide connectivity with off-chip audio peripherals. The SSI interfaces

connect internally to the AUDMUX which interfaces to the i.MX51 system

memory. The SSI supports a wide variety of protocols (SSI normal, SSI network,

I2S, and AC-97), bit depths (up to 24 bits per word), and clock/frame sync

options.

Each SSI has two pairs of 8x24 FIFOs and hardware support for an external

DMA controller in order to minimize its impact on system performance. The

second pair of FIFOs provides hardware interleaving of a second audio stream,

which reduces CPU overhead in use cases where two timeslots are being used

simultaneously.

SSI-2

SSI-3

TVE TV Encoder Multimedia The TVE is implemented in conjunction with the Image Processing Unit (IPU)

allowing handheld devices to display captured still images and

video directly on a TV or LCD projector. It supports the following analog video

outputs: composite, S-video, and component video up to HD720p/1080i.

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

10 Freescale Semiconductor

Features

TZIC TrustZone

Aware

Interrupt

Controller

ARM/Control The TrustZone Interrupt Controller (TZIC) collects interrupt requests from all

i.MX51 sources and routes them to the ARM core. Each interrupt can be

configured as a normal or a secure interrupt. Software Force Registers and

software Priority Masking are also supported.

UART-1

UART-2

UART-3

UART

Interface

Connectivity

Peripherals

Each of the UART modules supports the following serial data transmit/receive

protocols and configurations:

• 7 or 8 bit data words, 1 or 2 stop bits, programmable parity (even, odd, or

none)

• Programmable baud rates up to 4 MHz. This is a higher max baud rate relative

to the 1.875 MHz, which is stated by the TIA/EIA-232-F standard and

previous Freescale UART modules.

• 32-byte FIFO on Tx and 32 half-word FIFO on Rx supporting auto-baud

• IrDA 1.0 support (up to SIR speed of 115200 bps)

• Option to operate as 8-pins full UART, DCE, or DTE

USB USB 2.0

High-Speed

OTG and 3x

Hosts

Connectivity

Peripherals

USB-OTG contains one high-speed OTG module, which is internally connected

to the on-chip HS USB PHY. There are an additional three high-speed host

modules that require external USB PHYs.

VPU Video

Processing

Unit

Multimedia

Peripherals

A high-performing video processing unit (VPU), which covers many SD-level

video decoders and SD-level encoders as a multi-standard video codec engine

as well as several important video processing such as rotation and mirroring.

VPU Features:

• MPEG-4 decode: 720p, 30 fps, simple profile and advanced simple profile

• MPEG-4 encode: D1, 25/30 fps, simple profile

• H.263 decode: 720p, 30 fps, profile 3

• H.263 encode: D1, 25/30 fps, profile 3

• H.264 decode: 720p, 30 fps, baseline, main, and high profile

• H.264 encode: D1, 25/30 fps, baseline profile

• MPEG-2 decode: 720p, 30 fps, MP-ML

• MPEG-2 encode: D1, 25/30 fps, MP-ML (in software with partial acceleration

in hardware)

• VC-1 decode: 720p, 30 fps, simple, main, and advanced profile

• DivX decode: 720p, 30 fps versions 3, 4, and 5

• RV10 decode: 720p, 30 fps

• MJPEG decode: 32 Mpix/s

• MJPEG encode: 64 Mpix/s

WDOG-1 Watch Dog Timer

Peripherals

The Watch Dog Timer supports two comparison points during each counting

period. Each of the comparison points is configurable to evoke an interrupt to the

ARM core, and a second point evokes an external event on the WDOG line.

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

Features

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 11

2.1 Special Signal Considerations

Table 3 lists special signal considerations for the i.MX51. The signal names are listed in alphabetical order.

The package contact assignments are found in Section 5, “Package Information and Contact

Assignments.” Signal descriptions are defined in the i.MX51 Multimedia Applications Processor

Reference Manual (MCIMX51RM).

WDOG-2

(TZ)

Watch Dog

(TrustZone)

Timer

Peripherals

The TrustZone Watchdog (TZ WDOG) timer module protects against TrustZone

starvation by providing a method of escaping normal mode and forcing a switch

to the TZ mode. TZ starvation is a situation where the normal OS prevents

switching to the TZ mode. This situation should be avoided, as it can

compromise the system’s security. Once the TZ WDOG module is activated, it

must be serviced by TZ software on a periodic basis. If servicing does not take

place, the timer times out. Upon a time-out, the TZ WDOG asserts a TZ mapped

interrupt that forces switching to the TZ mode. If it is still not served, the TZ

WDOG asserts a security violation signal to the CSU. The TZ WDOG module

cannot be programmed or deactivated by a normal mode SW.

XTALOSC Crystal

Oscillator I/F

Clocking The XTALOSC module allows connectivity to an external crystal.

Table 3. Special Signal Considerations

Signal Name Remarks

CKIH1, CKIH2 Inputs feeding CAMPs (Clock Amplifiers) that have on-chip ac coupling precluding the need for

external coupling capacitors. The CAMPs are enabled by default, but the main clocks feeding the

on-chip clock tree are sourced from XTAL/EXTAL by default. Optionally, the use of a low jitter

external oscillators to feed CKIH1 or CKIH2 (while not required) can be an advantage if low jitter

or special frequency clock sources are required by modules driven by CKIH1 or CKIH2. See CCM

chapter in the

i.MX51 Multimedia Applications Processor Reference Manual

(MCIMX51RM)

for

details on the respective clock trees.

After initialization, the CAMPs could be disabled (if not used) by CCM registers (CCR CAMPx_EN

field). If disabled, the on-chip CAMP output is low; the input is irrelevant. If unused, the user should

tie CKIH1/CKIH2 to GND for best practice.

CLK_SS Clock Source Select is the input that selects the default reference clock source providing input to

the DPLLs. To use a reference in the megahertz range per Table 8, tie CLK_SS to GND to select

EXTAL/XTAL. To use a reference in the kilohertz range per Table 59, tie CLK_SS to NVCC_PER3

to select CKIL. After initialization, the reference clock source can be changed (initial setting is

overwritten).

Note: Because this input has a keeper circuit, Freescale recommends tying this input to directly

to GND or NVCC_PER3. If a series resistor is used its value must be ≤ 4.7 kΩ.

COMP The user should bypass this reference with an external 0.1 µF capacitor tied to GND. If TV OUT is

not used, float the COMP contact and ensure the DACs are powered down.

Note: Previous engineering samples required this reference to be bypassed to a positive supply.

FASTR_ANA and

FASTR_DIG

These signals are reserved for Freescale manufacturing use only. User must tie both connections

to GND.

GPANAIO This signal is reserved for Freescale manufacturing use only. Users should float this output.

Table 2. i.MX51A Digital and Analog Modules (continued)

Block

Mnemonic Block Name Subsystem Brief Description

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

12 Freescale Semiconductor

Features

GPIO_NAND This is a general-purpose input/output (GPIO3_12) on the NVCC_NANDF_A power rail.

IOB, IOG, IOR,

IOB_BACK, IOG_BACK,

and IOR_BACK

These signals are analog TV outputs that should be tied to GND when not being used.

JTAG_

nnnn

The JTAG interface is summarized in Ta bl e 4 . Use of external resistors is unnecessary. However,

if external resistors are used, the user must ensure that the on-chip pull-up/down configuration is

followed. For example, do not use an external pull down on an input that has on-chip pull-up.

JTAG_TDO is configured with a keeper circuit such that the floating condition is eliminated if an

external pull resistor is not present. An external pull resistor on JTAG_TDO is detrimental and

should be avoided.

JTAG_MOD is referenced as SJC_MOD in the

i.MX51 Multimedia Applications Processor

Reference Manual

(MCIMX51RM). Both names refer to the same signal. JTAG_MOD must be

externally connected to GND for normal operation. Termination to GND through an external

pull-down resistor (such as 1 kΩ) is allowed.

NC These signals are No Connect (NC) and should be floated by the user.

PMIC_INT_REQ When using the MC13892 power management IC, the PMIC_INT_REQ high-priority interrupt input

on i.MX51 should be either floated or tied to NVCC_SRTC_POW with a 4.7 kΩ to 68 kΩ resistor.

This avoids a continuous current drain on the real-time clock backup battery due to a 100 kΩ

on-chip pull-up resistor.

PMIC_INT_REQ is not used by the Freescale BSP (board support package) software. The BSP

requires that the general-purpose INT output from the MC13892 be connected to the i.MX51 GPIO

input GPIO1_8 configured to cause an interrupt that is not high-priority.

The original intent was for PMIC_INT_REQ to be connected to a circuit that detects when the

battery is almost depleted. In this case, the I/O must be configured as alternate mode 0 (ALT0 =

power fail).

POR_B This cold reset negative logic input resets all modules and logic in the IC.

Note: The POR_B input must be immediately asserted at power-up and remain asserted until

after the last power rail is at its working voltage.

RESET_IN_B This warm reset negative logic input resets all modules and logic except for the following:

• Test logic (JTAG, IOMUXC, DAP)

•SRTC

• Memory repair – Configuration of memory repair per fuse settings

• Cold reset logic of WDOG – Some WDOG logic is only reset by POR_B. See WDOG chapter

i.MX51 Multimedia Applications Processor Reference Manual

(MCIMX51RM)

for details.

RREFEXT Determines the reference current for the USB PHY bandgap reference. An external 6.04 kΩ 1%

resistor to GND is required.

SGND, SVCC, and

SVDDGP

These sense lines provide the ability to sense actual on-chip voltage levels on their respective

supplies. SGND monitors differentials of the on-chip ground versus an external power source.

SVCC monitors on-chip VCC, and SVDDGP monitors VDDGP. Freescale recommends connection

of the SVCC and SVDDGP signals to the feedback inputs of switching power-supplies or to test

points.

STR This signal is reserved for Freescale manufacturing use. The user should float this signal.

TEST_MODE TEST_MODE is for Freescale factory use only. This signal is internally connected to an on-chip

pull-down device. Users must either float this signal or tie it to GND.

Table 3. Special Signal Considerations (continued)

Signal Name Remarks

IOMUX Configuration for Boot Media

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 13

3 IOMUX Configuration for Boot Media

The information provided in this section describes the contacts assigned for each type of bootable media.

It also includes data about the clocks used during boot flow and their frequencies. Signals that can be

multiplexed appear in tables throughout this section. See the IOMUXC chapter in the i.MX51 Multimedia

Applications Processor Reference Manual (MCIMX51RM) for details about how to program the IOMUX

controller.

VREF When using VREF with DDR-2 I/O, the nominal 0.9 V reference voltage must be half of the

NVCC_EMI_DRAM supply. The user must tie VREF to a precision external resistor divider. Use a

1 kΩ 0.5% resistor to GND and a 1 kΩ 0.5% resistor to NVCC_EMI_DRAM. Shunt each resistor

with a closely-mounted 0.1 µF capacitor.

To reduce supply current, a pair of 1.5 kΩ 0.1% resistors can be used. Using resistors with

recommended tolerances ensures the ± 2% VREF tolerance (per the DDR-2 specification) is

maintained when four DDR-2 ICs plus the i.MX51 are drawing current on the resistor divider.

Note: When VREF is used with mDDR this signal must be tied to GND.

VREFOUT This signal determines the Triple Video DAC (TVDAC) reference voltage. The user must tie

VREFOUT to an external 1.05 kΩ 1% resistor to GND.

VREG This regulator is no longer used and should be floated by the user.

XTAL/EXTAL The user should tie a fundamental-mode crystal across XTAL and EXTAL. The crystal must be

rated for a maximum drive level of 100 μW or higher. An ESR (equivalent series resistance) of

80 Ω or less is recommended. Freescale BSP (Board Support Package) software requires 24 MHz

on EXTAL.

The crystal can be eliminated if an external 24 MHz oscillator is available. In this case, EXTAL must

be directly driven by the external oscillator and XTAL is floated. The EXTAL signal level must swing

from NVCC_OSC to GND. If the clock is used for USB, then there are strict jitter requirements: < 50

ps peak-to-peak below 1.2 MHz and < 100 ps peak-to-peak above 1.2 MHz for the USB PHY. The

COSC_EN bit in the CCM (Clock Control Module) must be cleared to put the on-chip oscillator

circuit in bypass mode which allows EXTAL to be externally driven. COSC_EN is bit 12 in the CCR

Table 4. JTAG Controller Interface Summary

JTAG I/O Type On-Chip Termination

JTAG_TCK Input 100 kΩ pull-down

JTAG_TMS Input 47 kΩ pull-up

JTAG_TDI Input 47 kΩ pull-up

JTAG_TDO 3-state output Keeper

JTAG_TRSTB Input 47 kΩ pull-up

JTAG_DE_B Input/open-drain output 47 kΩ pull-up

JTAG_MOD Input 100 kΩ pull-up

Table 3. Special Signal Considerations (continued)

Signal Name Remarks

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

14 Freescale Semiconductor

IOMUX Configuration for Boot Media

3.1 NAND

The NAND Flash Controller (NFC) signals are not configured in the IOMUX. The NFC interface uses

dedicated contacts on the IC.

3.2 SD/MMC IOMUX Pin Configuration

Table 5 shows the SD/MMC IOMUX pin configuration.

Only DAT0 is available when the SD/MMC is used for boot. The remaining lines (DAT1–DAT7) are not

available.

3.3 I2C IOMUX Pin Configuration

The contacts assigned to the signals used by the three I2C modules is shown in Table 6.

Table 5. SD/MMC IOMUX Pin Configuration

Signal eSDHC1 eSDHC2 eSDHC3 eSDHC4

CLK SD1_CLK.alt0 SD2_CLK.alt0 NANDF_RDY_INT.alt5 NANDF_CS2.alt5

CMD SD1_CMD.alt0 SD2_CMD.alt0 NANDF_CS7.alt5 NANDF_RB1.alt5

DAT0 SD1_DATA0.alt0 SD2_DATA0.alt0 NANDF_WE_B.alt2 NANDF_CS3.alt5

DAT1 N/A1

1N/A in the ROM code indicates the pins are not available.

N/A N/A N/A

DAT2 N/A N/A N/A N/A

CD/DAT3 SD1_DATA3.alt0 SD2_DATA3.alt0 NANDF_RB0.alt5 NANDF_CS6.alt5

DAT4 N/A N/A N/A N/A

DAT5 N/A N/A N/A N/A

DAT6 N/A N/A N/A N/A

DAT7 N/A N/A N/A N/A

Table 6 . I2C IOMUX Pin Configuration

Signal HSI2CI

2C1 I2C2

SDA I2C1_DAT.alt0 I2C1_DAT.alt0 GPIO1_3.alt2

SCL I2C1_CLK.alt0 I2C1_CLK.alt0 GPIO1_2.alt2

IOMUX Configuration for Boot Media

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 15

3.4 eCSPI/CSPI IOMUX Pin Configuration

The contacts assigned to the signals used by the three SPI modules is shown in Table 7.

3.5 Wireless External Interface Module (WEIM)

The WEIM interface signals are not configured in the IOMUX. The WEIM interface uses dedicated

contacts on the IC.

3.6 UART IOMUX Pin Configuration

The contacts assigned to the signals used by the three UART modules are shown in Table 8.

3.7 USB-OTG IOMUX Pin Configuration

The interface signals of the UTMI PHY are not configured in the IOMUX. The UTMI PHY interface uses

dedicated contacts on the IC.

Table 7. SPI IOMUX Pin Configuration

Signal eCSPI1 eCSPI2 CSPI

MISO CSPI1_MISO.alt0 NANDF_RB3.alt2 USBH1_NXT.alt1

MOSI CSPI1_MOSI.alt0 NANDF_D15.alt2 USBH1_DIR.alt1

RDY CSPI1_RDY.alt0 NANDF_RB1.alt2 USBH1_STP.alt1

SCLK CSPI1_SCLK.alt0 NANDF_RB2.alt2 USBH1_CLK.alt1

SS0 N/A1

1N/A in the ROM code indicates the pins are not available.

N/A N/A

SS1 N/A N/A USBH1_DATA5.alt1

SS2 N/A N/A N/A

SS3 N/A N/A N/A

Table 8. UART IOMUX Pin Configuration

Signal UART1 UART2 UART3

TXD UART1_TXD.alt0 UART2_TXD.alt0 UART3_TXD.alt1

RXD UART1_RXD.alt0 UART2_RXD.alt0 UART3_RXD.alt1

CTS UART1_CTS.alt0 USBH1_DATA0.alt1 KEY_COL5.alt2

RTS UART1_RTS.alt0 USBH1_DATA3.alt1 KEY_COL4.alt2

Table 9. ULPI PHY IOMUX Pin Configuration

Signal ULPI PHY

USB_PWR GPIO1_8.alt1

USB_OC GPIO1_9.alt1

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

16 Freescale Semiconductor

Electrical Characteristics

NOTE

USB OTG ULPI port is not supported and it is not functional. On-chip PHY

is always used for the OTG port.

4 Electrical Characteristics

This section provides the device and module-level electrical characteristics for the i.MX51A processor.

4.1 Chip-Level Conditions

This section provides the device-level electrical characteristics for the IC. See Table 10 for a quick

reference to the individual tables and sections.

CAUTION

Stresses beyond those listed under Table 11 may cause permanent damage

to the device. These are stress ratings only. Functional operation of the

device at these or any other conditions beyond those indicated under

Table 13 is not implied. Exposure to absolute-maximum-rated conditions

for extended periods may affect device reliability.

USBOTG_CLK EIM_CS4.alt2

USBOTG_NXT EIM_CS3.alt2

USBOTG_STP EIM_CS2.alt2

USBOTG_DAT0 EIM_D24.alt2

USBOTG_DAT1 EIM_D25.alt2

USBOTG_DAT2 EIM_D26.alt2

USBOTG_DAT3 EIM_D27.alt2

USBOTG_DAT4 EIM_D28.alt2

USBOTG_DAT5 EIM_D29.alt2

USBOTG_DAT6 EIM_D30.alt2

USBOTG_DAT7 EIM_D31.alt2

Table 10. i.MX51A Chip-Level Conditions

For these characteristics, … Topic appears …

Table 11, “Absolute Maximum Ratings” on page 17

Ta b le 1 2 , “Thermal Resistance Data”on page 17

Ta b le 1 3 , “i.MX51A Operating Ranges”on page 18

Ta b le 1 4 , “Interface Frequency”on page 19

Table 9. ULPI PHY IOMUX Pin Configuration (continued)

Signal ULPI PHY

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 17

Table 12 provides the thermal resistance data.

Table 11. Absolute Maximum Ratings

Parameter Description Symbol Min Max Unit

Peripheral Core Supply Voltage VCC –0.3 1.35 V

ARM Core Supply Voltage VDDGP –0.3 1.15 V

Supply Voltage (UHVIO, I2C) Supplies denoted as I/O Supply –0.5 3.6 V

Supply Voltage (except UHVIO, I2C) Supplies denoted as I/O Supply –0.5 3.3 V

USB VBUS VBUS — 5.25 V

Input/Output Voltage Range Vin/Vout –0.5 OVDD + 0.31

1The term OVDD in this section refers to the associated supply rail of an input or output. The association is described in

Table 128. The maximum range can be superseded by the DC tables.

ESD Damage Immunity: Vesd V

Human Body Model (HBM)

Charge Device Model (CDM)

—

2000

500

Storage Temperature Range TSTORAGE –40 125 oC

Junction Temperature TJ—125

2During the life of the device, TJ must be limited to a cumulative of 2% of the time over 105oC.

Table 12. Thermal Resistance Data

Rating Board Symbol Value Unit

Junction to Case1, 19 x 19 mm package

1Rjc-x per JEDEC 51-12: The junction-to-case thermal resistance. The “x” indicates the case surface where Tcase is measured

and through which 100% of the junction power is forced to flow due to the cold plate heat sink fixture placed either at the top (T)

or bottom (B) of the package, with no board attached to the package.

—R

θJC 6°C/W

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

18 Freescale Semiconductor

Electrical Characteristics

Table 13 shows the i.MX51 operating ranges.

Table 13. i.MX51A Operating Ranges

Symbol Parameter Minimum1Nominal2Maximum1Unit

VDDGP

MCIMX51xA products

ARM core supply voltage

0< fARM ≤ 600 MHz

0.95 1.0 1.1 V

ARM core supply voltage

Stop mode

0.9 0.95 1.05 V

VCC

MCIMX51xA products

Peripheral supply voltage High Performance

Mode (HPM) The clock frequencies are derived

from AXI and AHB buses using 133 or 166 MHz

(as needed). The DDR clock rate is 200 MHz.

Note: For detailed information about the use of

133 or 166 MHz clocks, see i.MX51 Multimedia

Applications Processor Reference Manual

(MCIMX51RM).

1.175 1.225 1.275 V

Peripheral supply voltage—Stop mode 0.9 0.95 1.275 V

VDDA Memory arrays voltage—Run Mode 1.15 1.20 1.275 V

Memory arrays voltage—Stop Mode 0.9 0.95 1.275 V

VDD_DIG_PLL_A

VDD_DIG_PLL_B

PLL Digital supplies 1.15 1.2 1.35 V

VDD_ANA_PLL_A

VDD_ANA_PLL_B

PLL Analog supplies 1.75 1.8 1.95 V

NVCC_EMI

NVCC_PER5

NVCC_PER10

NVCC_PER11

NVCC_PER12

NVCC_PER13

NVCC_PER14

GPIO EMI Supply and additional digital power

supplies.

1.65 1.875 or

2.775

3.1 V

NVCC_IPUx3

NVCC_PER3

NVCC_PER8

NVCC_PER9

GPIO IPU Supply and additional digital power

supplies.

1.65 1.875 or

2.775

3.1 V

NVCC_EMI_DRAM DDR and Fuse Read Supply 1.65 1.8 1.95 V

VDD_FUSE4Fusebox Program Supply (Write Only) 3.0 — 3.3 V

NVCC_NANDF_x5

NVCC_PER15

NVCC_PER17

Ultra High voltage I/O (UHVIO) supplies — V

UHVIO_L 1.65 1.875 1.95

UHVIO_H 2.5 2.775 3.1

UHVIO_UH 3.0 3.3 3.6

NVCC_USBPHY

NVCC_OSC

USB_PHY analog supply, oscillator analog

supply62.25 2.5 2.75 V

TVDAC_DHVDD,

NVCC_TV_BACK,

AHVDDRGB

TVE-to-DAC level shifter supply, cable detector

supply, analog power supply to RGB channel

2.69 2.75 2.91 V

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 19

4.1.1 Supply Current

Table 15 shows the fuse supply current.

NVCC_HS4_1

NVCC_HS4_2

NVCC_HS6

NVCC_HS10

HS-GPIO additional digital power supplies 1.65 — 3.1 V

NVCC_I2C I2C and HS-I2C I/O Supply71.65 1.875 1.95 V

2.7 3.0 3.3

NVCC_SRTC_

POW

SRTC Core and I/O Supply (LVIO) 1.1 1.2 1.3 V

VDDA33 USB PHY I/O analog supply 3.0 3.3 3.6 V

VBUS See Table 11 and Table 126 for details. This is

not a power supply.

—— ——

1Voltage at the package power supply contact must be maintained between the minimum and maximum voltages. The design

must allow for supply tolerances and system voltage drops.

2The nominal values for the supplies indicate the target setpoint for a tolerance no tighter than ± 50 mV. Use of supplies with a

tighter tolerance allows reduction of the setpoint with commensurate power savings.

3The NVCC_IPUx rails are isolated from one another. This allows the connection of different supply voltages for each one. For

example, NVCC_IPU2 can operate at 1.8 V while NVCC_IPU4 operates at 3.0 V.

4In Read mode, Freescale recommends VDD_FUSE be floated or grounded. Tying VDD_FUSE to a positive supply

(3.0 V–3.3 V) increases the possibility of inadvertently blowing fuses and is not recommended.

5The NAND Flash supplies are composed of three groups: A, B, and C. Each group can be powered with a different supply

voltage. For example, NVCC_NANDF_A = 1.8 V, NVCC_NANDF_B = 3.0 V, NVCC_NANDF_C = 2.7 V.

6The analog supplies should be isolated in the application design. Use of series inductors is recommended.

7Operation of the HS-I2C and I2C is not guaranteed when operated between the supply voltages of 1.95 to 2.7 V.

Table 14. Interface Frequency

Parameter Description Symbol Min Max Unit

JTAG: TCK Operating Frequency ftck See Table 99, "JTAG Timing," on page 130 MHz

CKIL: Operating Frequency fckil See Table 74, "FPM Specifications," on page 80 kHz

CKIH: Operating Frequency fckih See Table 47, "CAMP Electrical Parameters (CKIH1,

CKIH2)," on page 46

MHz

XTAL Oscillator fxtal 22 27 MHz

Table 15. Fuse Supply Current1

Description Symbol Min Typ Max Unit

eFuse Program Current.2

Current required to program one eFuse bit: The associated

VDD_FUSE supply per Table 13.

Iprogram — 60 120 mA

Table 13. i.MX51A Operating Ranges (continued)

Symbol Parameter Minimum1Nominal2Maximum1Unit

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

20 Freescale Semiconductor

Electrical Characteristics

Table 16 shows the current core consumption (not including I/O) of the i.MX51.

1The read current of approximately 5 mA is derived from the DDR supply (NVCC_EMI_DRAM).

2The current Iprogram is only required during program time.

Table 16. i.MX51 Stop Mode Current and Power Consumption

Mode Condition Supply Nominal Unit

Stop Mode

• External reference clocks

gated

• Power gating for ARM and

processing units

• Stop mode voltage

VDDGP = 0.95 V, VCC = 0.95 V, VDDA = 0.95 V

ARM CORE in SRPG mode

L1 and L2 caches power gated

IPU in S&RPG mode

VPU and GPU in PG mode

All PLLs off, all CCM-generated clocks off

CKIL input on with 32 kHz signal present

All modules disabled

USBPHY PLL off

External (MHz) crystal and on-chip oscillator

powered down (SBYOS bit asserted)

No external resistive loads that cause current flow

Standby voltage allowed (VSTBY bit is asserted)

TA = 25 °C

VDDGP 0.18 mA

VCC 0.35

VDDA 0.15

NVCC_OSC 0.012

Total 0.66 mW

Stop Mode

• External reference clocks

gated

• Power gating for ARM and

processing units

• HPM voltage

VDDGP = 1.0 V, VCC = 1.225 V, VDDA = 1.2 V

ARM CORE in SRPG mode

L1 and L2 caches power gated

IPU in S&RPG mode

VPU and GPU in PG mode

All PLLs off, all CCM-generated clocks off

CKIL input on with 32 kHz signal present

All modules disabled.

USBPHY PLL off

External (MHz) crystal and on-chip oscillator

powered down (SBYOS bit asserted)

No external resistive loads that cause current flow

TA = 25°C

VDDGP 0.24 mA

VCC 0.45

VDDA 0.2

NVCC_OSC 0.012

Total 1.09 mW

Stop Mode

• External reference clocks

enabled

• Power gating for ARM and

processing units

• HPM voltage

VDDGP = 1.0 V, VCC = 1.225 V, VDDA = 1.20 V

ARM CORE in SRPG mode

L1 and L2 caches power gated

IPU in S&RPG mode

VPU and GPU in PG mode

All PLLs off, all CCM-generated clocks off

CKIL input on with 32 kHz signal present

All modules disabled

USBPHY PLL off

External (MHz) crystal and on-chip oscillator pow-

ered and generating reference clock

No external resistive loads that cause current flow

TA = 25 °C

VDDGP 0.24 mA

VCC 0.45

VDDA 0.2

NVCC_OSC 1.5

To t a l 4 . 8 m W

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 21

4.1.2 USB PHY Current Consumption

Table 17 shows the USB PHY current consumption.

4.2 Supply Power-Up/Power-Down Requirements and Restrictions

The system design must comply with the power-up and power-down sequence guidelines as described in

this section to guarantee reliable operation of the device. Any deviation from these sequences may result

in the following situations:

• Excessive current during power-up phase

• Prevention of the device from booting

• Irreversible damage to the i.MX51A processor (worst-case scenario)

Stop Mode

• External reference clocks

enabled

• No power gating for ARM and

processing units

• HPM voltage

VDDGP = 1.0 V, VCC = 1.225 V, VDDA = 1.2 V

All PLLs off, all CCM-generated clocks off

CKIL input on with 32 kHz signal present

All modules disabled

USBPHY PLL off

External (MHz) crystal and on-chip oscillator

powered and generating reference clock

No external resistive loads that cause current flow

TA = 25 °C

VDDGP 50 mA

VCC 2

VDDA 1.15

NVCC_OSC 1.5

To t a l 6 3 m W

Table 17. USB PHY Current Consumption

Parameter Conditions Typical @ 25 °C Max Unit

Analog Supply

VDDA33 (3.3 V)

Full Speed

RX 5.5 6

TX 7 8

High Speed

RX 5 6

TX 5 6

Analog Supply

NVCC_USBPHY (2.5 V)

Full Speed

RX 6.5 7

TX 6.5 7

High Speed

RX 12 13

TX 21 22

Digital Supply

VCC (1.2 V)

Full Speed

RX 6 7

TX 6 7

High Speed

RX 6 7

TX 6 7

VDDA33 + NVCC_USBPHY + VCC Suspend 50 100 μA

Table 16. i.MX51 Stop Mode Current and Power Consumption (continued)

Mode Condition Supply Nominal Unit

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

22 Freescale Semiconductor

Electrical Characteristics

4.2.1 Power-Up Sequence

Figure 2 shows the power-up sequence.

Figure 2. Power-Up Sequence

NOTE

The POR_B input must be immediately asserted at power-up and remain

asserted until after the last power rail is at its working voltage.

For more information on power up, see i.MX51 Power-Up Sequence

(AN4053).

4.3 I/O DC Parameters

This section includes the DC parameters of the following I/O types:

• General Purpose I/O and High-Speed General Purpose I/O (GPIO/HSGPIO)

• Double Data Rate 2 (DDR2)

• Low Voltage I/O (LVIO)

• Ultra High Voltage I/O (UHVIO)

• High-Speed I2C and I2C

• Enhanced Secure Digital Host Controller (eSDHC)

AHVDDRGB

NVCC_TV_BACK

TVDAC_DHVDD

VDD_DIG_PLL_A/B

VDD_ANA_PLL_A/B

NVCC_OSC

NVCC_USBPHY

VDDA33

NVCC_EMI_DRAM

NVCC_SRTC_POW

VDDA

NVCC_NANDF_x

NVCC_PER15

NVCC_PER17

NVCC_HS4_1

NVCC_HS4_2

NVCC_HS6

NVCC_HS10

NVCC_PERx2

NVCC_EMI

NVCC_IPU

NVCC_I2C

VDDGP4

VDD_FUSE1

VCC

1. VDD_FUSE should only be powered when writing.

2. NVCC_PERx refers to NVCC_PER 3, 5, 8, 9, 10, 11, 12, 13, 14.

3. No power-up sequence dependencies exist between the supplies shown in the block diagram shaded in gray.

4. There is no requirement for VDDGP to be preceded by any other power supply other than NVCC_SRTC_POW.

5. If all of the UHVIO supplies (NVCC_NANDFx, NVCC_PER15 and NVCC_PER17) are less than 2.75 V then there is no

requirement on the power up sequence order between NVCC_EMI_DRAM and the UHVIO supplies. However, if the voltage

is 2.75 V and above, then NVCC_EMI_DRAM needs to power up before the UHVIO supplies as shown here.

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 23

NOTE

The term OVDD in this section refers to the associated supply rail of an

input or output. The association is shown in Table 128.

4.3.1 GPIO/HSGPIO DC Parameters

The parameters in Table 18 are guaranteed per the operating ranges in Table 13, unless otherwise noted.

Table 18. GPIO/HSGPIO DC Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

High-level output voltage Voh Iout = -1 mA OVDD –0.15 — OVDD + 0.3 V

Low-level output voltage Vol Iout = 1mA — — 0.15 V

High-level output current Ioh Vout = 0.8×OVDD

Low drive

Medium drive

High drive

Max drive

–1.9

–3.7

–5.2

–6.6

——

Low-level output current Iol Vout = 0.2×OVDD

Low drive

Medium drive

High drive

Max drive

1.9

3.7

5.2

6.6

——

High-Level DC input voltage1

1To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC

level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.

VIH — 0.7 ×OVDD — OVDD V

Low-Level DC input voltage1VIL — 0 — 0.3×OVDD V

Input Hysteresis VHYS OVDD = 1.875

OVDD = 2.775

0.25 0.34

0.45

—V

Schmitt trigger VT+1, 2

2Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.

VT+ — 0.5OVDD — — V

Schmitt trigger VT-1, 2 VT- — — — 0.5 ×OVDD V

Input current (no pull-up/down) Iin Vin = OVDD or 0 — — See Note 3

3I/O leakage currents are listed in Tab le 25 .

—

Input current (22 kΩ Pull-up) Iin Vin = 0 — — 161 μA

Input current (47 kΩ Pull-up) Iin Vin = 0 — — 76 μA

Input current (100 kΩ Pull-up) Iin Vin = 0 — — 36 μA

Input current (100 kΩ Pull-down) Iin Vin = OVDD — — 36 μA

Keeper Circuit Resistance — OVDD = 1.875V

OVDD = 2.775V

—

kΩ

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

24 Freescale Semiconductor

Electrical Characteristics

4.3.2 DDR2 I/O DC Parameters

The parameters in Table 19 are guaranteed per the operating ranges in Table 13, unless otherwise noted.

4.3.3 Low Voltage I/O (LVIO) DC Parameters

The parameters in Table 20 are guaranteed per the operating ranges in Table 13, unless otherwise noted.

Table 19. DDR2 I/O DC Electrical Parameters

Parameters Symbol Test Conditions Min Max Unit

High-level output voltage Voh — OVDD – 0.28 — V

Low-level output voltage Vol — — 0.28 V

Output minimum Source Current Ioh OVDD = 1.7 V

Vout = 1.42 V

–13.4 — mA

Output min Sink Current Iol OVDD = 1.7 V

Vout = 0.28 V

13.4 — mA

DC input Logic High VIH — OVDD/2 + 0.125 OVDD + 0.3 V

DC input Logic Low VIL — –0.3 OVDD/2 – 0.125 V

Input voltage range of each differential input Vin — –0.3 OVDD + 0.3 V

Differential input voltage required for switching Vid — 0.25 OVDD + 0.6 V

Termination Voltage Vtt Vtt tracking OVDD/2 OVDD/2 – 0.04 OVDD/2 + 0.04 V

Input current (no pull-up/down) Iin VI = 0

VI = OVDD

—

See Note 1

1I/O leakage currents are listed in Table 25.

—

Table 20. LVIO DC Electrical Characteristics

DC Electrical Characteristics Symbol Test Conditions Min Typ Max Unit

High-level output voltage Voh Iout = –1 mA OVDD – 0.15 — — V

Low-level output voltage Vol Iout = 1 mA — — 0.15 V

High-level output current I

Ioh

Vout = 0.8 ×OVDD

Low Drive

Medium Drive

High Drive

Max Drive

–2.1

–4.2

–6.3

–8.4

——

Low-level output current I

Iol

Vout = 0.2 ×OVDD

Low Drive

Medium Drive

High Drive

Max Drive

2.1

4.2

6.3

8.4

——

High-Level DC input voltage1 VIH — 0.7 ×OVDD — OVDD V

Low-Level DC input voltage1VIL — 0 — 0.3 ×OVDD V

Input Hysteresis VHYS OVDD = 1.875

OVDD = 2.775

0.35 0.62

1.27

—V

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 25

4.3.4 Ultra-High Voltage I/O (UHVIO) DC Parameters

The parameters in Table 21 are guaranteed per the operating ranges in Table 13, unless otherwise noted.

Schmitt trigger VT+1, 2 VT+ — 0.5 ×OVDD — — V

Schmitt trigger VT–1, 2 VT– — — — 0.5 ×OVDD V

Input current (no pull-up/down) Iin VI = 0 or OVDD — — See Note 3—

Input current (22 kΩ Pull-up) Iin VI = 0 — — 161 μA

Input current (47 kΩ Pull-up) Iin VI = 0 — — 76 μA

Input current (100 kΩ Pull-up) Iin VI = 0 — — 36 μA

Input current (100 kΩ Pull-down) Iin VI = OVDD — — 36 μA

Keeper Circuit Resistance — OVDD = 1.875 V

OVDD = 2.775 V

—

kΩ

1To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC

level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.

2Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.

3I/O leakage currents are listed in Ta bl e 25 .

Table 21. UHVIO DC Electrical Characteristics

DC Electrical Characteristics Symbol Test Conditions Min Typ Max Unit

High-level output voltage Voh Iout = –1mA OVDD–0.15 — — V

Low-level output voltage Vol Iout = 1mA — — 0.15 V

High-level output current, low voltage mode

Ioh_lv

Vout = 0.8 ×OVDD

Low Drive

Medium Drive

High Drive

–2.2

–4.4

–6.6

——

High-level output current, high voltage mode

Ioh_hv

Vout = 0.8 ×OVDD

Low Drive

Medium Drive

High Drive

–5.1

–10.2

–15.3

——

Low-level output current, low voltage mode

Iol_lv

Vout = 0.2 ×OVDD

Low Drive

Medium Drive

High Drive

2.2

4.4

6.6

——

Low-level output current, high voltage mode

Iol_hv

Vout = 0.2 ×OVDD

Low Drive

Medium Drive

High Drive

5.1

10.2

15.3

——

High-Level DC input voltage1,2 VIH — 0.7 ×OVDD — OVDD V

Low-Level DC input voltage2,3 VIL — 0 — 0.3 ×OVDD V

Table 20. LVIO DC Electrical Characteristics (continued)

DC Electrical Characteristics Symbol Test Conditions Min Typ Max Unit

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

26 Freescale Semiconductor

Electrical Characteristics

The UHVIO type of I/O cells have to be configured properly according to their supply voltage level, in

order to prevent permanent damage to them and in order to not degrade their timing performance.

The HVE control bit of the I/O cell (in IOMUX control registers) should be set to 1 for Low voltage

operation and to 0 for High voltage operation.

The HVE bit should be set as follows:

• HVE = 0: High output voltage mode (3.0V to 3.6V)

• HVE = 1: Low output voltage mode (1.65V to 3.1V)

This is related to power domains, such as NVCC_NANDF, NVCC_PER15, and NVCC_PER17.

If HVE bit is not set properly when high voltage level is applied for long durations, it may cause permanent

damage over a period of time, causing reduced timing performance of the pad. Similarly, not setting HVE

bit properly for low voltage will degrade pad timing performance.

The below discussion clarifies concerns about boot-up period.

The HVE bit is set, by default, to 1 for low voltage operation. As a result, there might be a short period

conflict between the HVE bit value and the applied voltage. This conflict is acceptable under the following

conditions:

Input Hysteresis VHYS Low voltage mode

High voltage mode

0.38

0.95

—0.43

1.33

Schmitt trigger VT+2,3 VT+ — 0.5OVDD — — V

Schmitt trigger VT–2,4 VT– — — — 0.5 ×OVDD V

Input current (no pull-up/down) Iin Vin = 0

Vin = OVDD

— — See Note 4—

Input current (22 kΩ Pull-up) Iin Vin = 0 — — 202 μA

Input current (75 kΩ Pull-up) Iin Vin = 0 — — 61 μA

Input current (100 kΩ Pull-up) Iin Vin = 0 — — 47 μA

Input current (360 kΩ Pull-down) Iin Vin = OVDD — — 5.7 μA

Keeper Circuit Resistance — NA — 17 — kΩ

1 To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC

level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.

2Overshoot and undershoot conditions (transitions above OVDD and below OVSS) on switching pads must be held below 0.6 V,

and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/undershoot must be

controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods.

Non-compliance to this specification may affect device reliability or cause permanent damage to the device.

3Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.

4I/O leakage currents are listed in Ta b l e 2 5 .

Table 21. UHVIO DC Electrical Characteristics (continued)

DC Electrical Characteristics Symbol Test Conditions Min Typ Max Unit

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 27

• The UHVIO pads receive supply voltage up to 3.3V (3.6V max); however, the pads do not toggle

during the boot-up sequence (using another interface as a boot code source), for boot-up period of

about 22 msec.

• The UHVIO pads receive up to 3.15V (3.3V max) and are used for accessing the boot code, for

boot-up period of about 11 msec.

In any case, it is recommended to try to minimize the duration of this period and reduce the amount of

toggling on the pads as much as possible. For this, it is recommended to add proper HVE bit programming

to the DCD boot-up tables. DCD is a table located in the start of the image that can hold up to 60

address/values. ROM code reads addresses and writes values to it. This space should be sufficient to

reprogram the NAND Flash pads for HVE bits.

4.3.5 I2C I/O DC Parameters

NOTE

See the errata for HS-I2C in i.MX51 Chip Errata document. The two

standard I2C modules have no errata.

The DC Electrical Characteristics listed in Table 22 are guaranteed using operating ranges per Table 13,

unless otherwise noted.

4.3.6 USBOTG Electrical DC Parameters

This section describes the electrical DC parameters of USBOTG.

Table 2 2. I2C Standard/Fast/High-Speed Mode Electrical Parameters for Low/Medium Drive Strength

Parameter Symbol Test Conditions Min Typ Max Unit

Low-level output voltage Vol Iol = 3 mA — — 0.4 V

High-Level DC input voltage 1

1To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current

DC level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.

VIH — 0.7 ×OVDD — OVDD V

Low-Level DC input voltage1VIL — 0 — 0.3 ×OVDD V

Input Hysteresis VHYS — 0.25 — — V

Schmitt trigger VT+1,2

2Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.

VT+ — 0.5 ×OVDD — — V

Schmitt trigger VT– 1,2 VT– — — — 0.5 ×OVDD V

I/O leakage current (no pull-up) Iin VI = OVDD or 0 — — See Note 3

3I/O leakage currents are listed in Ta bl e 2 5 .

—

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

28 Freescale Semiconductor

Electrical Characteristics

4.3.7 USB Port Electrical DC Characteristics

Table 23 and Table 24 list the electrical DC characteristics.

Table 23. USBOTG Interface Electrical Specification

Parameter Symbol Signals Min Max Unit Test Conditions

Input High Voltage VIH USB_VPOUT

USB_VMOUT

USB_XRXD,

USB_VPIN,

USB_VMIN

VDD x 0.7 VDD V —

Input low Voltage VIL USB_VPOUT

USB_VMOUT

USB_XRXD,

USB_VPIN,

USB_VMIN

0 VDD × 0.3 V —

Output High Voltage VOH USB_VPOUT

USB_VMOUT

USB_TXENB

VDD – 0.43 — V 7 mA Drv

at IOH = 5 mA

Output Low Voltage VOL USB_VPOUT

USB_VMOUT

USB_TXENB

—0.43V7 mA Drv

at IOH = 5 mA

Table 24. USB Interface Electrical Specification

Parameter Symbol Signals Min Max Unit Test Conditions

Input High Voltage VIH USB_DAT_VP

USB_SE0_VM

USB_RCV,

USB_VP1,

USB_VM1

VDD x 0.7 VDD V —

Input Low Voltage VIL USB_DAT_VP

USB_SE0_VM

USB_RCV,

USB_VP1,

USB_VM1

0 VDD x 0.3 V —

Output High Voltage VOH USB_DAT_VP

USB_SE0_VM

USB_TXOE_B

VDD –0.43 — V 7 mA Drv

at Iout = 5 mA

Output Low Voltage VOL USB_DAT_VP

USB_SE0_VM

USB_TXOE_B

—0.43 V7 mA Drv

at Iout = 5 mA

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 29

Table 25 shows the I/O leakage currents that are based on the operating ranges in Table 13 and the

operating temperatures in Table 1.

4.4 Output Buffer Impedance Characteristics

This section defines the I/O Impedance parameters of the i.MX51A processor.

4.4.1 LVIO I/O Output Buffer Impedance

Table 26 shows the LVIO I/O output buffer impedance.

Table 25. I/O Leakage Current

Contact Group Supply Rail Test Condition Min Typ Max Unit

NANDF NVCC_NANDF V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±1 μA

EIM NVCC_EMI V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±1 μA

DRAM NVCC_DRAM V[I/O] = GND or Positive

Supply Rail, I/O = High Z

——±2.5μA

CSI1, CSI2, DISP1_Data[5:0] NVCC_HSx V[I/O] = GND or Positive

Supply Rail, I/O = High Z

——±1.5μA

I2C1 NVCC_I2C V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±1 μA

DI1_DAT[23:6],

DISPB_SER_x, DI_GPx

NVCC_IPU V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±2 μA

CKIL, PMIC_x NVCC_SRTC_POW V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±1 μA

EXTAL, XTAL NVCC_OSC V[I/O] = GND or Positive

Supply Rail, I/O = High Z

— — ±170 μA

ID, GPANAIO NVCC_USBPHY V[I/O] = GND or Positive

Supply Rail, I/O = High Z

— — ±170 μA

DISP2_DAT[0:15] NVCC_IPU,

NVCC_HS

V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±2 μA

SD1, SD2 NVCC_PER15,

NVCC_PER17

V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±10μA

Peripherals except SD1, SD2 NVCC_PERx V[I/O] = GND or Positive

Supply Rail, I/O = High Z

—— ±2 μA

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

30 Freescale Semiconductor

Electrical Characteristics

4.4.2 DDR2 Output Buffer Impedance

Table 27 shows the DDR2 output buffer impedance.

Table 26. LVIO I/O Output Buffer Impedance

Parameter Symbol Conditions Min

Typical

Max Unit

OVDD 2.775 V OVDD 1.875 V

Output Driver

Impedance

Rpu Low Drive Strength, Ztl = 150 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

Max Drive Strength, Ztl = 37.5 Ω

104

150

250

125

Output Driver

Impedance

Rpd Low Drive Strength, Ztl = 150 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

Max Drive Strength, Ztl = 37.5 Ω

134

243

122

Table 27. DDR2 I/O Output Buffer Impedance HVE = 0

Parameter Symbol Test Conditions

Best Case

Tj=–40 °C

OVDD =1.95 V

VCC =1.3 V

Typical

Tj=25 °C

OVDD =1.8 V

VCC =1.2 V

Worst Case

Tj=105 °C

OVDD =1.6 V

VCC =1.1 V Unit

s0–s5

000000

s0–s5

101010

s0–s5

111111

Output Driver

Impedance

Rpu Low Drive Strength, Ztl = 150 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

Max Drive Strength

185

92.5

61.7

26.5

140

19.5

111.4

55.7

37.2

15.4

Output Driver

Impedance

Rpd Low Drive Strength, Ztl = 150 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

Max Drive Strength

190.3

95.1

63.4

27.6

145.4

72.7

48.5

19.9

120.6

60.3

40.2

16.9

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 31

4.4.3 UHVIO Output Buffer Impedance

Table 28 shows the UHVIO output buffer impedance.

NOTE

Output driver impedance is measured with long transmission line of

impedance Ztl attached to I/O pad and incident wave launched into

transmission lime. Rpu/Rpd and Ztl form a voltage divider that defines

specific voltage of incident wave relative to OVDD. Output driver

impedance is calculated from this voltage divider (see Figure 3).

Table 28. UHVIO Output Buffer Impedance

Parameter Symbol Test Conditions

Min Typ Max

Unit

OVDD

1.95 V

OVDD

3.0 V

OVDD

1.875 V

OVDD

3.3 V

OVDD

1.65 V

OVDD

3.6 V

Output Driver

Impedance

Rpu Low Drive Strength, Ztl = 150 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

114

124

135

198

206

103

Output Driver

Impedance

Rpd Low Drive Strength, Ztl =1 50 Ω

Medium Drive Strength, Ztl = 75 Ω

High Drive Strength, Ztl = 50 Ω

118

126

154

179

217

109

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

32 Freescale Semiconductor

Electrical Characteristics

Figure 3. Impedance Matching Load for Measurement

ipp_do

Cload = 1p

Ztl Ω, L = 20 inches

predriver

PMOS (Rpu)

NMOS (Rpd)

pad

OVDD

OVSS

t,(ns)

U,(V)

OVDD

t,(ns)

VDD

Vin (do)

Vout (pad)

U,(V)

Vref

Rpu = Vovdd – Vref1

Vref1 × Ztl

Rpd = × Ztl

Vref2

Vovdd – Vref2

Vref1 Vref2

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 33

4.5 I/O AC Parameters

The load circuit and output transition time waveforms are shown in Figure 4 and Figure 5. AC electrical

characteristics for slow and fast I/O are presented in the Table 29 and Table 30, respectively.

Figure 4. Load Circuit for Output

Figure 5. Output Transition Time Waveform

4.5.1 Slow I/O AC Parameters

Table 29 shows the slow I/O AC parameters.

Table 29. Slow I/O AC Parameters

Parameter Symbol Test Condition Min Rise/Fall Typ Max Rise/Fall Unit

Output Pad Transition Times (Max Drive) tr, tf 15 pF

35 pF

— — 1.98/1.52

3.08/2.69

Output Pad Transition Times (High Drive) tr, tf 15 pF

35 pF

— — 2.31/1.838

3.8/2.4

Output Pad Transition Times (Medium Drive) tr, tf 15 pF

35 pF

— — 2.92/2.43

5.37/4.99

Output Pad Transition Times (Low Drive) tr, tf 15 pF

35 pF

— — 4.93/4.53

10.55/9.79

Output Pad Slew Rate (Max Drive) tps 15 pF

35 pF

0.5/0.65

0.32/0.37

—— V/ns

Output Pad Slew Rate (High Drive) tps 15 pF

35 pF

0.43/0.54

0.26/0.41

—— V/ns

Output Pad Slew Rate (Medium Drive) tps 15 pF

35 pF

0.34/0.41

0.18/0.2

—— V/ns

Output Pad Slew Rate (Low Drive) tps 15 pF

35 pF

0.20/0.22

0.09/0.1

—— V/ns

Output Pad di/dt (Max Drive) tdit — — — 30 mA/ns

Output Pad di/dt (High Drive) tdit — — — 23 mA/ns

Output Pad di/dt (Medium drive) tdit — — — 15 mA/ns

Test Po in t

From Output

Under Test

CL includes package, probe and fixture capacitance

NVCC

20%

80% 80%

20%

tr tf

Output (at I/O)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

34 Freescale Semiconductor

Electrical Characteristics

4.5.2 Fast I/O AC Parameters

Table 30 shows the fast I/O AC parameters.

4.5.3 I2C AC Parameters

NOTE

See the errata for HS-I2C in the i.MX51 Chip Errata document. The two

standard I2C modules have no errata

Output Pad di/dt (Low drive) tdit — — — 7 mA/ns

Input Transition Times1trm — — — 25 ns

1Hysteresis mode is recommended for inputs with transition times greater than 25 ns.

Table 30. Fast I/O AC Parameters

Parameter Symbol Test

Condition Min Rise/Fall Typ Max Rise/Fall Unit

Output Pad Transition Times (Max Drive) tr, tf 15 pF

35 pF

— — 1.429/1.275

2.770/2.526

Output Pad Transition Times (High

Drive)

tr, tf 15 pF

35 pF

— — 1.793/1.607

3.565/3.29

Output Pad Transition Times (Medium

Drive)

tr, tf 15 pF

35 pF

— — 2.542/2.257

5.252/4.918

Output Pad Transition Times (Low Drive) tr, tf 15 pF

35 pF

— — 4.641/4.456

10.699/10.0

Output Pad Slew Rate (Max Drive) tps 15 pF

35 pF

0.69/0.78

0.36/0.39

—— V/ns

Output Pad Slew Rate (High Drive) tps 15 pF

35 pF

0.55/0.62

0.28/0.30

—— V/ns

Output Pad Slew Rate (Medium Drive) tps 15 pF

35 pF

0.39/0.44

0.19/0.20

—— V/ns

Output Pad Slew Rate (Low Drive) tps 15 pF

35 pF

0.21/0.22

0.09/0.1

—— V/ns

Output Pad di/dt (Max Drive) tdit — — — 70 mA/ns

Output Pad di/dt (High Drive) tdit — — — 53 mA/ns

Output Pad di/dt (Medium drive) tdit — — — 35 mA/ns

Output Pad di/dt (Low drive) tdit — — — 18 mA/ns

Input Transition Times1

1Hysteresis mode is recommended for inputs with transition time greater than 25 ns.

trm — — — 25 ns

Table 29. Slow I/O AC Parameters (continued)

Parameter Symbol Test Condition Min Rise/Fall Typ Max Rise/Fall Unit

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 35

Figure 6 depicts the load circuit for output pads for standard- and fast-mode. Figure 7 depicts the output

pad transition time definition. Figure 8 depicts load circuit with external pull-up current source for

HS-mode. Figure 9 depicts HS-mode timing definition.

Figure 6. Load Circuit for Standard and Fast-Mode

Figure 7. Definition of Timing for Standard and Fast-Mode

Figure 8. Load Circuit for HS-Mode with External Pull-Up Current Source

Figure 9. Definition of Timing for HS-Mode

Test Po in t

From Output

Under Test CL

CL includes package, probe and fixture capacitance

OVDD

70%

30%

Output

Test Po in t

From Output

Under Test

CL2

3 mA1

OVDD

1Load current when output is between 0.3×OVDD and 0.7×OVDD

2CL includes package, probe, and fixture capacitance.

Notes:

OVDD

30%

70% 70%

30%

tTLH tTHL

Output (at pad)

PA3Max = max of tTLH and tTHL

PA4Max = max tTHL

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

36 Freescale Semiconductor

Electrical Characteristics

The electrical characteristics for I2C I/O are listed in Table 31 to Table 34. Characteristics are guaranteed

using operating ranges per Table 13, unless otherwise noted.

Table 31. I2C Standard- and Fast-Mode Electrical Parameters

for Low/Medium Drive Strength and OVDD = 2.7 V–3.3 V

Parameter Symbol Test Conditions Min Typ Max Unit

Output fall time,

(low driver strength)

tf from VIHmin to VILmax with CL from 10 pF to 400 pF — — 52 ns

Output fall time,

(medium driver strength)

tf from VIHmin to VILmax with CL from 10 pF to 400 pF — — 28 ns

Table 32. I2C Standard- and Fast-Mode Electrical Parameters

for Low/Medium Drive Strength and OVDD =1.65 V–1.95 V

Parameter Symbol Test Conditions Min Typ Max Unit

Output fall time,

(low driver strength)

tof from VIHmin to VILmax with CL from 10 pF to 400 pF — — 70 ns

Output fall time,

(medium driver strength)

tof from VIHmin to VILmax with CL from 10 pF to 400 pF — — 35 ns

Table 33. I2C High-Speed Mode Electrical Parameters

for Low/Medium Drive Strength and OVDD =2.7 V–3.3 V

Parameter Symbol Test Conditions Min Typ Max Unit

Output rise time (current-source enabled) and

fall time at SCLH

(low driver strength)

trCL, tfCL with a 3mA external

pull-up current source

and CL = 100 pF

— — 18/21 ns

Output rise time (current-source enabled) and

fall time at SCLH

(medium driver strength)

trCL, tfCL with a 3mA external

pull-up current source

and CL = 100 pF

—— 9/9 ns

Output fall time at SDAH

(low driver strength)

tfDA with CL from 10 pF to

100 pF

— — 14 ns

Output fall time at SDAH

(medium driver strength)

tfDA with CL from 10 pF to

100 pF

—— 8 ns

Output fall time at SDAH

(low driver strength)

tfDA CL = 400 pF — — 52 ns

Output fall time at SDAH

(medium driver strength)

tfDA CL = 400 pF — — 27 ns

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 37

Table 34. I2C High-Speed Mode Electrical Parameters

for Low/Medium Drive Strength and OVDD = 1.65 V–1.95 V

Parameter Symbol Test Conditions Min Typ Max Unit

Output rise time (current-source

enabled) and fall time at SCLH

(low driver strength)

trCL, tfCL with a 3 mA external pull-up current

source and CL = 100 pF

——10/74ns

Output rise time (current-source

enabled) and fall time at SCLH

(medium driver strength)

trCL, tfCL with a 3 mA external pull-up current

source and CL = 100 pF

— — 7/14 ns

Output fall time at SDAH

(low driver strength)

tfDA with CL from 10 pF to 100 pF 0 — 17 ns

Output fall time at SDAH

(medium driver strength)

tfDA with CL from 10 pF to 100 pF 0 — 9 ns

Output fall time at SDAH

(low driver strength)

tfDA CL = 400 pF 30 — 67 ns

Output fall time at SDAH

(medium driver strength)

tfDA CL = 400 pF 15 — 34 ns

Table 35. Low Voltage I2C I/O Parameters

Parameter Symbol Test Condition Min Rise/Fall Typ Max Rise/Fall Unit

Output Pad di/dt (Medium drive) tdit — — — 22 mA/ns

Output Pad di/dt (Low drive) tdit — — — 11 mA/ns

Input Transition Times1

1Hysteresis mode is recommended for inputs with transition time greater than 25 ns

trm — — — 25 ns

Table 36. High Voltage I2C I/O Parameters

Parameter Symbol Test Condition Min Rise/Fall Typ Max Rise/Fall Unit

Output Pad Transition Times (Medium Drive) tr, tf 15 pF

35 pF

—— 3/3

6/5

Output Pad Transition Times (Low Drive) tr, tf 15 pF

35 pF

—— 5/5

9/9

Output Pad Slew Rate (Medium Drive) tps 15 pF

35 pF

0/0

——V/ns

Output Pad Slew Rate (Low Drive) tps 15 pF

35 pF

0/0

——V/ns

Output Pad di/dt (Medium drive) tdit — — — 36 mA/ns

Output Pad di/dt (Low drive) tdit — — — 16 mA/ns

Input Transition Times1

1Hysteresis mode is recommended for inputs with transition time > 25 ns

trm — — — 25 ns

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

38 Freescale Semiconductor

Electrical Characteristics

4.5.4 AC Electrical Characteristics for DDR2

The load circuit for output pads, the output pad transition time waveform and the output pad propagation

and transition time waveform are below.

Figure 10 shows the output pad transition time waveform.

Figure 10. Output Pad Transition Time Waveform

Figure 11 shows the output pad propagation and transition time waveform.

Figure 11. Output Pad Propagation and Transition Time Waveform

AC electrical characteristics in DDR2 mode for fast mode and for ovdd = 1.65 – 1.95 V, ipp_hve = 0 are

placed in Table 37.

Table 37. AC Electrical Characteristics of DDR2 IO Pads for Fast mode and

for ovdd=1.65–1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times1tpr 15pF

35pF

0.57/0.57

1.29/1.29

0.45/0.44

0.97/0.94

0.45/0.45

0.82/0.85

Output Pad Propagation Delay, 50%-50%1tpo 15pF

35pF

0.98/0.96

1.47/1.50

1.27/1.19

1.63/1.57

1.89/1.72

2.20/2.07

Output Pad Slew Rate1tps 15pF

35pF

2.05/2.05

0.91/0.91

2.40/2.45

1.11/1.15

2.20/2.20

1.21/1.16

V/ns

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 39

AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65 – 1.95 V, ipp_hve = 0 are

placed in Table 38:

Output Pad di/dt1di/dt — 390 201 99 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay without Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.45/0.93 0.6/0.58 0.9/0.88 ns

Input Pad Propagation Delay with Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.55/0.55 0.71/0.7 1.03/0.98 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.38/0.38 0.58/0.61 1.014/1.07 ns

Maximum Input Transition Times3trm — — — 5 ns

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5=000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 38. AC Electrical Characteristics of DDR2 IO Pads for Slow Mode and

for ovdd=1.65–1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times1tpr 15pF

35pF

0.75/0.76

1.39/1.40

0.70/0.74

1.18/1.21

1.06/1.00

1.49/1.47

Output Pad Propagation Delay, 50%-50%1tpo 15pF

35pF

1.50/1.55

2.05/2.16

1.90/1.95

2.36/2.48

3.23/3.10

3.82/3.75

Output Pad Slew Rate1tps 15pF

35pF

1.56/1.54

0.84/0.84

1.54/1.46

0.92/0.89

0.93/0.99

0.66/0.67

V/ns

Output Pad di/dt1di/dt — 82 40 19 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay without Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.45/0.93 0.6/0.58 0.9/0.88 ns

Input Pad Propagation Delay with Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.55/0.55 0.71/0.7 1.03/0.98 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.38/0.38 0.58/0.61 1.014/1.07 ns

Maximum Input Transition Times3trm — — — 5 ns

Table 37. AC Electrical Characteristics of DDR2 IO Pads for Fast mode and

for ovdd=1.65–1.95 V (ipp_hve=0) (continued)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

40 Freescale Semiconductor

Electrical Characteristics

AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65 – 1.95 V, ipp_hve=0 are placed

in Table 39.

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5 = 000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 39. AC Electrical Characteristics of DDR mobile IO Pads for Fast Mode and

ovdd=1.65–1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times (High Drive)1tpr 15pF

35pF

1.35/1.31

2.99/2.94

1.02/1.03

2.28/2.29

0.89/0.89

1.85/1.94

Output Pad Transition Times (Medium Drive)1tpr 15pF

35pF

2.00/1.99

4.55/4.44

1.56/1.53

3.38/3.45

1.28/1.32

2.79/2.85

Output Pad Transition Times (Low Drive)1tpr 15pF

35pF

4.08/3.92

8.93/8.95

3.11/3.06

6.84/6.81

2.50/2.61

5.56/5.76

Output Pad Propagation Delay (High Drive)1tpo 15pF

35pF

1.54/1.52

2.69/2.75

1.73/1.62

2.59/2.55

2.36/2.09

3.04/2.86

Output Pad Propagation Delay (Medium Drive)1tpo 15pF

35pF

2.00/2.02

3.75/3.86

2.08/2.00

3.38/3.39

2.64/2.40

3.65/3.56

Output Pad Propagation Delay (Low Drive)1tpo 15pF

35pF

3.43/3.52

6.92/7.20

3.13/3.13

5.72/5.94

3.47/3.34

5.49/5.65

Output Pad Slew Rate (High Drive)1tps 15pF

35pF

0.87/0.89

0.39/0.40

1.06/1.05

0.47/0.47

1.11/1.11

0.54/0.51

V/ns

Output Pad Slew Rate (Medium Drive)1tps 15pF

35pF

0.58/0.59

0.26/0.26

0.69/0.71

0.32/0.31

0.77/0.75

0.35/0.35

V/ns

Output Pad Slew Rate (Low Drive)1tps 15pF

35pF

0.29/0.30

0.13/0.13

0.35/0.35

0.16/0.16

0.40/0.38

0.18/0.17

V/ns

Output Pad di/dt (High Drive)1di/dt — 185 91 46 mA/ns

Output Pad di/dt (Medium drive)1di/dt — 124 61 31 mA/ns

Output Pad di/dt (Low drive)1di/dt — 62 30 16 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay without Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.45/0.93 0.6/0.58 0.9/0.88 ns

Input Pad Propagation Delay with Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.55/0.55 0.71/0.7 1.03/0.98 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.38/0.38 0.58/0.61 1.014/1.07 —

Maximum Input Transition Times3trm — — — 5 ns

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 41

AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed

in Table 40.

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5 = 000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 40. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode

ovdd=1.65–1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times (High Drive)1tpr 15pF

35pF

1.42/1.43

3.03/2.92

1.20/1.27

2.39/2.38

1.43/1.49

2.35/2.46

Output Pad Transition Times (Medium Drive)1tpr 15pF

35pF

2.04/2.04

4.51/4.49

1.68/1.74

3.47/3.50

1.82/1.91

3.16/3.30

Output Pad Transition Times (Low Drive)1tpr 15pF

35pF

4.08/3.93

9.06/8.93

3.16/3.19

6.92/6.93

2.90/3.01

5.74/5.96

Output Pad Propagation Delay (High Drive)1tpo 15pF

35pF

2.00/2.17

3.15/3.42

2.33/2.50

3.24/3.52

3.70/3.70

4.63/4.75

Output Pad Propagation Delay (Medium Drive)1tpo 15pF

35pF

2.47/2.68

4.2/4.53

2.72/2.92

4.01/4.37

4.10/4.16

5.33/5.55

Output Pad Propagation Delay (Low Drive)1tpo 15pF

35pF

3.87/4.18

7.32/7.86

3.78/4.10

6.35/6.90

5.13/5.30

7.25/7.73

Output Pad Slew Rate (High Drive)1tps 15pF

35pF

0.82/0.82

0.39/0.40

0.90/0.85

0.45/0.49

0.69/0.66

0.42/0.40

V/ns

Output Pad Slew Rate (Medium Drive)1tps 15pF

35pF

0.57/0.57

0.26/0.26

0.70/0.62

0.31/0.31

0.54/0.52

0.31/0.30

V/ns

Output Pad Slew Rate (Low Drive)1tps 15pF

35pF

0.29/0.30

0.13/0.13

0.34/0.34

0.16/0.16

0.34/0.33

0.17/0.17

V/ns

Output Pad di/dt (High Drive)1di/dt 47 14 9 mA/ns

Output Pad di/dt (Medium drive)1di/dt — 27 9 6 mA/ns

Output Pad di/dt (Low drive)1di/dt — 12 5 3 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay without Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.45/0.93 0.6/0.58 0.9/0.88 ns

Input Pad Propagation Delay with Hysteresis

(CMOS input), 50%-50%2

tpi 1.2 pF 0.55/0.55 0.71/0.7 1.03/0.98 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.38/0.38 0.58/0.61 1.014/1.07 —

Maximum Input Transition Times3trm — — — 5 ns

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

42 Freescale Semiconductor

Electrical Characteristics

AC electrical characteristics in DDR2 mode for Fast mode and for ovdd=1.65–1.95V, ipp_hve=0 are

placed in Table 41.

AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65-1.95V, ipp_hve=0 are

placed in Table 42.

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5=000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 41. AC Electrical Characteristics of DDR2_clk IO Pads for Fast mode and

for ovdd=1.65–1.95 V

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times1

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, -40 °C and s0-s5=000000.

tpr 15pF

35pF

0.58/0.57

1.29/1.28

0.45/0.44

0.97/0.93

0.45/0.45

0.82/0.85

Output Pad Propagation Delay, 50%-50%1tpo 15pF

35pF

1.05/1.03

1.54/1.56

1.40/1.31

1.75/1.69

2.12/1.96

2.43/2.31

Output Pad Slew Rate1tps 15pF

35pF

2.02/2.05

0.91/0.91

2.40/2.45

1.11/1.16

2.20/2.20

1.21/1.16

V/ns

Output Pad di/dt1di/dt — 390 201 99 mA/ns

Input Pad Transition Times2

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8

V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.

trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.3/0.36 0.5/0.52 0.82/0.94 ns

Maximum Input Transition Times3

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

trm — — — 5 ns

Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for

ovdd=1.65 – 1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times1tpr 15pF

35pF

0.74/0.76

1.40/1.39

0.69/0.72

1.18/1.20

1.04/1.01

1.48/1.47

Output Pad Propagation Delay, 50%-50%1tpo 15pF

35pF

1.56/1.61

2.12/2.22

2.02/2.08

2.49/2.61

3.45/3.33

4.05/3.98

Output Pad Slew Rate1tps 15pF

35pF

1.58/1.54

0.84/0.84

1.57/1.50

0.92/0.90

0.95/0.98

0.67/0.67

V/ns

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 43

AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65-1.95V, ipp_hve=0 are placed in

Table 43.

Output Pad di/dt1di/dt — 82 40 19 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.3/0.36 0.5/0.52 0.82/0.94 ns

Maximum Input Transition Times3trm — — — 5 ns

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, -40 °C and s0-s5=000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8

V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode

and ovdd=1.65 – 1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times (High Drive)1tpr 15pF

35pF

1.35/1.32

3.01/2.96

1.03/1.03

2.29/2.30

0.89/0.89

1.84/1.92

Output Pad Transition Times (Medium Drive)1tpr 15pF

35pF

1.98/1.98

4.52/4.38

1.55/1.54

3.46/3.45

1.29/1.30

2.80/2.88

Output Pad Transition Times (Low Drive)1tpr 15pF

35pF

3.99/3.94

8.93/8.86

3.10/3.04

6.77/6.85

2.50/2.57

5.40/5.68

Output Pad Propagation Delay (High Drive)1tpo 15pF

35pF

1.60/1.58

2.74/2.81

1.85/1.74

2.71/2.67

2.58/2.31

3.26/3.08

Output Pad Propagation Delay (Medium Drive)1tpo 15pF

35pF

2.07/2.08

3.79/3.92

2.19/2.12

3.46/3.51

2.86/2.62

3.87/3.77

Output Pad Propagation Delay (Low Drive)1tpo 15pF

35pF

3.47/3.57

6.94/7.26

3.23/3.25

5.84/6.06

3.69/3.55

5.73/5.87

Output Pad Slew Rate (High Drive)1tps 15pF

35pF

0.87/0.89

0.39/0.40

1.05/1.05

0.47/0.47

1.11/1.11

0.54/0.52

V/ns

Output Pad Slew Rate (Medium Drive)1tps 15pF

35pF

0.59/0.59

0.26/0.27

0.70/0.70

0.31/0.31

0.77/0.76

0.35/0.34

V/ns

Output Pad Slew Rate (Low Drive)1tps 15pF

35pF

0.29/0.30

0.13/0.13

0.35/0.36

0.16/0.16

0.40/0.39

0.18/0.17

V/ns

Output Pad di/dt (High Drive)1di/dt — 185 91 46 mA/ns

Output Pad di/dt (Medium drive)1di/dt — 124 61 31 mA/ns

Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for

ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

44 Freescale Semiconductor

Electrical Characteristics

AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed

in Table 44.

Output Pad di/dt (Low drive)1di/dt — 62 30 16 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.3/0.36 0.5/0.52 0.82/0.94 —

Maximum Input Transition Times3trm — — — 5 ns

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5=000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 44. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode and

ovdd=1.65 – 1.95 V (ipp_hve=0)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Output Pad Transition Times (High Drive)1tpr 15pF

35pF

1.42/1.42

3.01/2.96

1.20/1.27

2.38/2.40

1.43/1.49

2.37/2.44

Output Pad Transition Times (Medium Drive)1tpr 15pF

35pF

2.05/2.04

4.50/4.42

1.67/1.71

3.48/3.52

1.82/1.87

3.16/3.28

Output Pad Transition Times (Low Drive)1tpr 15pF

35pF

4.06/3.98

8.94/8.86

3.15/3.17

6.92/6.93

2.92/ 3.02

5.69/5.96

Output Pad Propagation Delay (High Drive)1tpo 15pF

35pF

2.07/2.23

3.21/3.48

2.46/2.62

3.35/3.63

3.92/3.93

4.84/4.97

Output Pad Propagation Delay (Medium Drive)1tpo 15pF

35pF

2.53/2.74

4.26/4.58

2.83/3.04

4.12/4.49

4.32/4.35

5.55/5.76

Output Pad Propagation Delay (Low Drive)1tpo 15pF

35pF

3.93/4.23

7.38/7.91

3.89/4.21

6.43/7.01

5.37/5.51

7.45/7.94

Output Pad Slew Rate (High Drive)1tps 15pF

35pF

0.82/0.82

0.39/0.40

0.90/0.85

0.45/0.45

0.69/0.66

0.42/0.41

V/ns

Output Pad Slew Rate (Medium Drive)1tps 15pF

35pF

0.57/0.57

0.26/0.26

0.65/0.63

0.31/0.31

0.54/0.53

0.31/0.30

V/ns

Output Pad Slew Rate (Low Drive)1tps 15pF

35pF

0.29/0.29

0.13/0.13

0.34/0.34

0.16/0.16

0.34/0.33

0.17/0.17

V/ns

Output Pad di/dt (High Drive)1di/dt — 47 14 9 mA/ns

Output Pad di/dt (Medium drive)1di/dt — 27 9 6 mA/ns

Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode

and ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 45

4.6 Module Timing

This section contains the timing and electrical parameters for the modules in the i.MX51 processor.

4.6.1 Reset Timings Parameters

Figure 12 shows the reset timing and Table 45 lists the timing parameters.

Figure 12. Reset Timing Diagram

Output Pad di/dt (Low drive)1di/dt — 12 5 3 mA/ns

Input Pad Transition Times2trfi 1.2 pF 0.09/0.09 0.132/0.128 0.212/0.213 ns

Input Pad Propagation Delay (DDR input),

50%-50%2

tpi 1.2 pF 0.3/0.36 0.5/0.52 0.82/0.94 —

Maximum Input Transition Times3trm — — — 5 ns

1Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,

tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,

IO 1.95 V, –40 °C and s0-s5=000000.

2Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO

1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3Hysteresis mode is recommended for input with transition time greater than 25 ns.

Table 45. Reset Timing Parameters

ID Parameter Min Max Unit

CC1 Duration of RESET_IN to be qualified as valid (input slope = 5 ns) 50 — ns

Table 44. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode and

ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)

Parameter Symbol Test

Condition

Min

rise/fall Typ Max

rise/fall Units

RESET_IN

CC1

(Input)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

46 Freescale Semiconductor

Electrical Characteristics

4.6.2 WDOG Reset Timing Parameters

Figure 13 shows the WDOG reset timing and Table 46 lists the timing parameters.

Figure 13. WATCHDOG_RST Timing Diagram

NOTE

CKIL is approximately 32 kHz. TCKIL is one period or approximately 30 μs.

4.6.3 AUDMUX Timing Parameters

The AUDMUX provides a programmable interconnect logic for voice, audio and data routing between

internal serial interfaces (SSIs) and external serial interfaces (audio and voice codecs). The AC timing of

AUDMUX external pins is hence governed by the SSI module.

4.6.4 Clock Amplifier Parameters (CKIH1, CKIH2)

The input to Clock Amplifier (CAMP) is internally ac-coupled allowing direct interface to a square wave

or sinusoidal frequency source. No external series capacitors are required. Table 47 shows the CAMP

electrical parameters.

Table 46. WATCHDOG_RST Timing Parameters

ID Parameter Min Max Unit

CC5 Duration of WATCHDOG_RESET Assertion 1 — TCKIL

Table 47. CAMP Electrical Parameters (CKIH1, CKIH2)

Parameter Min Typ Max Unit

Input frequency 8.0 — 40.0 MHz

VIL (for square wave input) 0 — 0.3 V

VIH (for square wave input) NVCC_PER3 - 0.25 — NVCC_PER3 V

Sinusoidal input amplitude 0.4 — VDD Vp-p

Output duty cycle 45 50 55 %

WATCHDOG_RST

CC5

(Input)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 47

4.6.5 DPLL Electrical Parameters

Table 48 shows the DPLL electrical parameters.

4.6.6 NAND Flash Controller (NFC) Parameters

This section provides the relative timing requirements among different signals of NFC at the module level

in the different operational modes.

Timing parameters in Figure 14, Figure 15, Figure 16, Figure 17, Figure 19, and Table 50 show the default

NFC mode (asymmetric mode) using two Flash clock cycles per one access of RE_B and WE_B. Timing

parameters in Figure 14, Figure 15, Figure 16, Figure 18, Figure 19, and Table 50 show symmetric NFC

mode using one Flash clock cycle per one access of RE_B and WE_B.

Table 48. DPLL Electrical Parameters

Parameter Test Conditions/Remarks Min Typ Max Unit

Reference clock frequency range1

1Device input range cannot exceed the electrical specifications of the CAMP, see Table 47.

— 10 — 100 MHz

Reference clock frequency range after

pre-divider

—10—40MHz

Output clock frequency range (dpdck_2) — 300 — 1025 MHz

Pre-division factor2

2The values specified here are internal to DPLL. Inside the DPLL, a “1” is added to the value specified by the user.Therefore,

the user has to enter a value “1” less than the desired value at the inputs of DPLL for PDF and MFD.

—1—16—

Multiplication factor integer part — 5 — 15 —

Multiplication factor numerator3

3The maximum total multiplication factor (MFI + MFN/MFD) allowed is 15.Therefore, if the MFI value is 15, MFN value must be

zero.

Should be less than denominator –67108862 — 67108862 —

Multiplication factor denominator2— 1 — 67108863 —

Output Duty Cycle — 48.5 50 51.5 %

Frequency lock time4

(FOL mode or non-integer MF)

4Tdpdref is the time period of the reference clock after predivider.According to the specification, the maximum lock time in FOL

mode is 398 cycles of divided reference clock when DPLL starts after full reset.

———398

Tdpdref

Phase lock time — — — 100

µs

Frequency jitter5 (peak value)

5Tdck is the time period of the output clock, dpdck_2.

— — 0.02 0.04

Tdck

Phase jitter (peak value) FPL mode, integer and fractional MF — 2.0 3.5 ns

Power dissipation

fdck

= 300 MHz @ avdd = 1.8 V,

dvdd = 1.2 V

fdck

= 650 MHz @ avdd = 1.8 V,

dvdd = 1.2 V

— — 0.65 (avdd)

0.92 (dvdd)

1.98 (avdd)

1.8 (dvdd)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

48 Freescale Semiconductor

Electrical Characteristics

With reference to the timing diagrams, a high is defined as 80% of signal value and low is defined as 20%

of signal value. All parameters are given in nanoseconds. The BGA contact load used in calculations is 20

pF (except for NF16 - 40 pF) and there is max drive strength on all contacts.

All timing parameters are a function of T, which is the period of the flash_clk clock (“enfc_clk” at system

level). This clock frequency can be controlled by the user, configuring CCM (SoC clock controller). The

clock is derived from emi_slow_clk after single divider. Table 49 demonstrates few examples for clock

frequency settings.

NOTE

A potential limitation for minimum clock frequency may exist for some

devices. When the clock frequency is too low the actual data bus capturing

might occur after the specified trhoh (RE_B high to output hold) period.

Setting the clock frequency above 25.6 MHz (T = 39 ns) guarantees proper

operation for devices having trhoh > 15 ns. It is also recommended to set the

NFC_FREQ_SEL Fuse accordingly to initiate the boot with 33.33 MHz

clock.

Lower frequency operation can be supported for most available devices in

the market, relying on data lines Bus-Keeper logic. This depends on device

behavior on the data bus in the time interval between data output valid to

data output high-Z state. In NAND device parameters this period is marked

between trhoh and trhz (RE_B high to output high-Z). In most devices, the

data transition from valid value to high-Z occurs without going through

other states. Setting the data bus pads to Bus-Keeper mode in the IOMUX

registers, keeps the data bus valid internally after the specified hold time,

allowing proper capturing with slower clock.

Table 49. NFC Clock Settings Examples

emi_slow_clk (MHz) nfc_podf (Division Factor) enfc_clk (MHz) T—Clock Period (ns)1

1Rounded up to whole nanoseconds.

133 (max value) 5 (reset value) 26.6 38

133 4 33.25 31

133 3 44.33 23

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 49

Figure 14. Command Latch Cycle Timing

Figure 15. Address Latch Cycle Timing

Figure 16. Write Data Latch Timing

NFCLE

NFCE_B

NFWE_B

NFIO[7:0] command

NF9

NF8

NF1 NF2

NF5

NF3 NF4

NFCE_B

NFWE_B

NFALE

NFIO[7:0] Address

NF9

NF8

NF5

NF3 NF4

NF6

NF11

NF10

NF7

NFCE_B

NFWE_B

NFIO[15:0] Data to NF

NF9

NF8

NF5

NF3

NF11

NF10

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

50 Freescale Semiconductor

Electrical Characteristics

Figure 17. Read Data Latch Timing—Asymmetric Mode

Figure 18. Read Data Latch Timing—Symmetric Mode

NFCE_B

NFRE_B

NFRB_B

NFIO[15:0] Data from NF

NF13

NF15

NF14

NF17

NF12

NF16

NFCE_B

NFRE_B

NFRB_B

NFIO[15:0] Data from NF

NF13

NF15

NF14

NF12

NF16 NF18

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 51

Figure 19. Other Timing Parameters

Table 50. NFC—Timing Characteristics

ID Parameter Symbol Asymmetric

Mode Min

Symmetric

Mode Min Max

NF1 NFCLE setup Time tCLS 2T-1 2T-1 —

NF2 NFCLE Hold Time tCLH T-4.45 T-4.45 —

NF3 NFCE_B Setup Time tCS 2T-1 T-1 —

NF4 NFCE_B Hold Time tCH 2T-5.55 0.5T-5.55 —

NF5 NFWE_B Pulse Width tWP T-2.5 0.5T-1.5 —

NF6 NFALE Setup Time tALS 2T-2.7 2T-2.7 —

NF7 NFALE Hold Time tALH T-4.45 T-4.45 —

NF8 Data Setup Time tDS T-2.25 0.5T-2.25 —

NF9 Data Hold Time tDH T-6.55 0.5T-5.55 —

NF10 Write Cycle Time tWC 2T T —

NF11 NFWE_B Hold Time tWH T-1.25 0.5T-1.25 —

NF12 Ready to NFRE_B Low tRR 9T 9T —

NF13 NFRE_B Pulse Width tRP 1.5T-2.7 0.5T —

NF14 READ Cycle Time tRC 2T T —

NF15 NFRE_B High Hold Time tREH 0.5T-1.5 0.5T-1.5 —

NF161Data Setup on READ tDSR 11.2+0.5T-Tdl211.2-Tdl2—

NF173Data Hold on READ tDHR 0 — 2Taclk+T

NF184Data Hold on READ tDHR — Tdl22Taclk+T

NF19 CLE to RE delay tCLR 13T 13T —

NF20 CE to RE delay tCRE T-3.45 1.5T-3.45 —

NFCLE

NFCE_B

NFRE_B

NFRB_B

NFWE_B

NF20

NF19

NF21

NF22

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

52 Freescale Semiconductor

Electrical Characteristics

4.6.7 External Interface Module (WEIM)

The following sections provide information on the WEIM.

4.6.7.1 WEIM Signal Cross Reference

Table 51 is a guide to help the user identify signals in the WEIM Chapter of the i.MX51 Multimedia

Applications Processor Reference Manual (MCIMX51RM) that are the same as those mentioned in this

data sheet.

NF21 WE high to RE low tWHR 14T-5.45 14T-5.45 —

NF22 WE high to busy tWB — — 6T

1tDSR is calculated by the following formula:

Asymmetric mode: tDSR = tREpd + tDpd + 1/2T – Tdl2

Symmetric mode: tDSR = tREpd + tDpd – Tdl2

tREpd + tDpd = 11.2 ns (including clock skew)

where tREpd is RE propogation delay in the chip including IO pad delay, and tDpd is Data propogation delay

from IO pad to EMI including IO pad delay.

tDSR can be used to determine tREA max parameter with the following formula: tREA = 1.5T – tDSR.

2Tdl is composed of 4 delay-line units each generates an equal delay with min 1.25 ns and max 1 aclk

period (Taclk). Default is 1/4 aclk period for each delay-line unit, so all 4 delay lines together generates

a total of 1 aclk period. Taclk is “emi_slow_clk” of the system, which default value is 7.5 ns (133 MHz).

3NF17 is defined only in asymmetric operation mode.

NF17 max value is equivalent to max tRHZ value that can be used with NFC.

Taclk is “emi_slow_clk” of the system.

4NF18 is defined only in Symmetric operation mode.

tDHR (MIN) is calculated by the following formula: Tdl2 – (tREpd + tDpd)

where tREpd is RE propogation delay in the chip including IO pad delay, and tDpd is Data propogation delay

from IO pad to EMI including IO pad delay.

NF18 max value is equivalent to max tRHZ value that can be used with NFC.

Taclk is “emi_slow_clk” of the system.

Table 51. WEIM Signal Cross Reference

Reference Manual

WEIM Chapter Nomenclature

Data Sheet Nomenclature,

Reference Manual External Signals and Pin Multiplexing Chapter,

and IOMUX Controller Chapter Nomenclature

BCLK EIM_BCLK

CSx EIM_CSx

WE_B EIM_RW

OE_B EIM_OE

BEy_B EIM_EBx

ADV EIM_LBA

Table 50. NFC—Timing Characteristics (continued)

ID Parameter Symbol Asymmetric

Mode Min

Symmetric

Mode Min Max

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 53

4.6.7.2 WEIM Internal Module Multiplexing

Table 52 provides WEIM internal muxing information.

384

ADDR EIM_A[27:16], EIM_DA[15:0]

ADDR/M_DATA EIM_DAx (Addr/Data muxed mode)

DATA EIM_NFC_D (Data bus shared with NAND Flash)

EIM_Dx (dedicated data bus)

WAIT_B EIM_WAIT

Table 52. WEIM Interface Pinout in Various Configurations

Non Multiplexed Address/Data Mode

(MUM=0)

Multiplexed

Address/Data Mode

(MUM=1)

8-Bit

(DSZ=100)

8-Bit

(DSZ=101)

8-Bit1

(DSZ=110

)

1This mode is not supported due to erratum ENGcm11244.

8-Bit

(DSZ=111

)

16-Bit

(DSZ=001)

16-Bit

(DSZ=010)

32-Bit

(DSZ=011

)

16-Bit

(DSZ=001)

32-Bit

(DSZ=011)

A[15:0] EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

EIM_DA

[15:0]

A[27:16] EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

EIM_A

[27:16]

NANDF_D

[11:0]

D[7:0],

EIM_EB0

NANDF_D

[7:0]

— — — NANDF_D

[7:0]

— NANDF_D

[7:0]

EIM_DA

[7:0]

EIM_DA

[7:0]

D[15:8],

EIM_EB1

— NANDF_D

[15:8]

— — NANDF_D

[15:8]

— NANDF_D

[15:8]

EIM_DA

[15:8]

EIM_DA

[15:8]

D[23:16],

EIM_EB2

——EIM_D

[23:16]

——EIM_D

[23:16]

EIM_D

[23:16]

— NANDF_D

[7:0]

D[31:24],

EIM_EB3

———EIM_D

[31:24]

—EIM_D

[31:24]

EIM_D

[31:24]

— NANDF_D

[15:8]

Table 51. WEIM Signal Cross Reference (continued)

Reference Manual

WEIM Chapter Nomenclature

Data Sheet Nomenclature,

Reference Manual External Signals and Pin Multiplexing Chapter,

and IOMUX Controller Chapter Nomenclature

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

54 Freescale Semiconductor

Electrical Characteristics

4.6.7.3 General WEIM Timing-Synchronous Mode

Figure 20, Figure 21, and Table 53 specify the timings related to the WEIM module. All WEIM output

control signals may be asserted and deasserted by an internal clock synchronized to the BCLK rising

edge according to corresponding assertion/negation control fields.

Figure 20. WEIM Outputs Timing Diagram

Figure 21. WEIM Inputs Timing Diagram

Table 53. WEIM Bus Timing Parameters 1

ID Parameter

BCD = 0 BCD = 1 BCD = 2 BCD = 3

Min Max Min Max Min Max Min Max

WE1 BCLK Cycle time2t 2 x t 3 x t 4 x t

WE2 BCLK Low Level

Width

0.4 x t 0.8 x t 1.2 x t 1.6 x t

WE4

Address

CSx_B

WE_B

OE_B

BCLK

BEy_B

ADV_B

Output Data

...

WE5

WE6 WE7

WE8 WE9

WE10 WE11

WE12 WE13

WE14 WE15

WE16 WE17

WE3

WE2

WE1

Input Data

WAIT_B

BCLK

WE19

WE18

WE21

WE20

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 55

WE3 BCLK High Level

Width

0.4 x t 0.8 x t 1.2 x t 1.6 x t

WE4 Clock rise to address

valid3

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t

+1.75

-2 x t -

1.25

-2 x t +

1.75

WE5 Clock rise to address

invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE6 Clock rise to CSx_B

valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE7 Clock rise to CSx_B

invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE8 Clock rise to WE_B

Valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE9 Clock rise to WE_B

Invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE10 Clock rise to OE_B

Valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE11 Clock rise to OE_B

Invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE12 Clock rise to BEy_B

Valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE13 Clock rise to BEy_B

Invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE14 Clock rise to ADV_B

Valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE15 Clock rise to ADV_B

Invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE16 Clock rise to Output

Data Valid

-0.5 x t -

1.25

-0.5 x t +

1.75

-t - 1.25 -t + 1.75 -1.5 x t -

1.25

-1.5 x t +

1.75

-2 x t -

1.25

-2 x t +

1.75

WE17 Clock rise to Output

Data Invalid

0.5 x t -

1.25

0.5 x t + 1.75 t - 1.25 t + 1.75 1.5 x t -

1.25

1.5 x t +

1.75

2 x t -

1.25

2 x t + 1.75

WE18 Input Data setup time

to Clock rise

2 ns — 4 ns — — — — —

WE19 Input Data hold time

from Clock rise

2 ns — 2 ns — — — — —

WE20 WAIT_B setup time to

Clock rise

2 ns — 4 ns — — — — —

WE21 WAIT_B hold time

from Clock rise

2 ns — 2 ns — — — — —

Table 53. WEIM Bus Timing Parameters (continued)1

ID Parameter

BCD = 0 BCD = 1 BCD = 2 BCD = 3

Min Max Min Max Min Max Min Max

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Electrical Characteristics

4.6.7.4 Examples of WEIM Synchronous Accesses

Figure 22 to Figure 25 provide few examples of basic WEIM accesses to external memory devices with

the timing parameters mentioned previously for specific control parameters settings.

Figure 22. Synchronous Memory Read Access, WSC=1

1t is the maximal WEIM logic (axi_clk) cycle time. The maximum allowed axi_clk frequency is 133 MHz, whereas the maximum

allowed BCLK frequency is 104 MHz. As a result, if BCD = 0, axi_clk must be ≤104 MHz. If BCD = 1, then 133 MHz is allowed

for axi_clk, resulting in a BCLK of 66.5 MHz. When the clock branch to WEIM is decreased to 104 MHz, other busses are

impacted which are clocked from this source. See the CCM chapter of the i.MX51 Reference Manual for a detailed clock tree

description.

2BCLK parameters are being measured from the 50% point, that is, high is defined as 50% of signal value and low is defined

as 50% as signal value.

3For signal measurements “High” is defined as 80% of signal value and “Low” is defined as 20% of signal value.

Last Valid Address Address v1

D(v1)

BCLK

ADDR

DATA

WE_B

ADV_B

OE_B

BEy_B

CSx_B

WE4 WE5

WE6 WE7

WE10 WE11

WE13

WE12

WE14

WE15

WE18

WE19

Electrical Characteristics

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Freescale Semiconductor 57

Figure 23. Synchronous Memory, Write Access, WSC=1, WBEA=0, and WADVN=0

Figure 24. Muxed Address/Data (A/D) Mode, Synchronous Write Access, WSC=6, ADVA=0, ADVN=1, and

ADH=1

NOTE

In 32-bit muxed address/data (A/D) mode the 16 MSBs are driven on the

data bus.

Last Valid Address Address V1

D(V1)

BCLK

ADDR

DATA

WE_B

ADV_B

OE_B

BEy_B

CSx_B

WE4 WE5

WE6 WE7

WE8 WE9

WE12

WE13

WE14

WE15

WE16 WE17

Last

BCLK

ADDR/

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Address V1 Write Data

Valid Addr

M_DATA

WE4

WE16

WE6 WE7

WE9

WE8

WE10 WE11

WE14 WE15

WE17

WE5

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Electrical Characteristics

Figure 25. 16-Bit Muxed A/D Mode, Synchronous Read Access, WSC=7, RADVN=1, ADH=1, and OEA=0

4.6.7.5 General WEIM Timing-Asynchronous Mode

Figure 26 through Figure 31, and Table 54 help to determine timing parameters relative to the chip select

(CS) state for asynchronous and DTACK WEIM accesses with corresponding WEIM bit fields and the

timing parameters mentioned above.

Asynchronous read and write access length in cycles may vary from what is shown in Figure 26 through

Figure 29 as RWSC, OEN, and CSN is configured differently. See i.MX51 reference manual for the

WEIM programming model.

Last

BCLK

ADDR/

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Address V1 DataValid Addr

M_DATA

WE5

WE6

WE7

WE14 WE15

WE10

WE11

WE12 WE13

WE18

WE19

WE4

Electrical Characteristics

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Freescale Semiconductor 59

Figure 26. Asynchronous Memory Read Access (RWSC = 5)

Figure 27. Asynchronous A/D Muxed Read Access (RWSC = 5)

Last Valid Address Address V1

D(V1)

ADDR/

DATA[7:0]

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Next Address

WE39

WE35

WE37

WE32

WE36

WE38

WE43

WE40

WE31

WE44

INT_CLK

start of

access

end of

access

MAXDI

MAXCSO

MAXCO

M_DATA

Addr. V1 D(V1)

ADDR/

WE_B

ADV_B

OE_B

BEy_B

CSx_B

WE39

WE35A

WE37

WE36

WE38

WE40A

WE31

WE44

INT_CLK

start of

access

end of

access

MAXDI

MAXCSO

MAXCO

WE32A

M_DATA

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Electrical Characteristics

Figure 28. Asynchronous Memory Write Access

Figure 29. Asynchronous A/D Muxed Write Access

Last Valid Address Address V1

D(V1)

ADDR

DATA

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Next Address

WE31

WE39

WE33

WE45

WE32

WE40

WE34

WE46

WE42

WE41

WE_B

OE_B

BEy_B

CSx_B

WE33

WE45

WE34

WE46

WE42

Addr. V1 D(V1)

ADDR/

WE31

WE42

WE41A

WE32A

M_DATA

ADV_B

WE39

WE40A

Electrical Characteristics

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Freescale Semiconductor 61

Figure 30. DTACK Read Access (DAP=0)

Figure 31. DTACK Write Access (DAP=0)

Last Valid Address Address V1

D(V1)

ADDR

DATA[7:0]

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Next Address

WE39

WE35

WE37

WE32

WE36

WE38

WE43

WE40

WE31

WE44

DTACK

WE47

WE48

Last Valid Address Address V1

D(V1)

ADDR

DATA

WE_B

ADV_B

OE_B

BEy_B

CSx_B

Next Address

WE31

WE39

WE33

WE45

WE32

WE40

WE34

WE46

WE42

WE41

DTACK

WE47

WE48

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Electrical Characteristics

Table 54. WEIM Asynchronous Timing Parameters Table Relative Chip Select

Ref No. Parameter

Determination by

Synchronous measured

parameters 12

Min

Max

(If 133 MHz is

supported by SOC)

Unit

WE31 CSx_B valid to Address Valid WE4 - WE6 - CSA3— 3 - CSA ns

WE32 Address Invalid to CSx_B

invalid

WE7 - WE5 - CSN4 —3 - CSNns

WE32A(

muxed

A/D

CSx_B valid to Address Invalid t5 + WE4 - WE7 + (ADVN +

ADVA + 1 - CSA3)

-3 + (ADVN +

ADVA + 1 - CSA)

—ns

WE33 CSx_B Valid to WE_B Valid WE8 - WE6 + (WEA - CSA) — 3 + (WEA - CSA) ns

WE34 WE_B Invalid to CSx_B Invalid WE7 - WE9 + (WEN - CSN) — 3 - (WEN_CSN) ns

WE35 CSx_B Valid to OE_B Valid WE10 - WE6 + (OEA - CSA) — 3 + (OEA - CSA) ns

WE35A

(muxed

A/D)

CSx_B Valid to OE_B Valid WE10 - WE6 + (OEA + RADVN

+ RADVA + ADH + 1 - CSA)

-3 + (OEA +

RADVN+RADVA+

ADH+1-CSA)

3 + (OEA +

RADVN+RADVA+AD

H+1-CSA)

WE36 OE_B Invalid to CSx_B Invalid WE7 - WE11 + (OEN - CSN) — 3 - (OEN - CSN) ns

WE37 CSx_B Valid to BEy_B Valid

(Read access)

WE12 - WE6 + (RBEA - CSA) — 3 + (RBEA6 - CSA) ns

WE38 BEy_B Invalid to CSx_B Invalid

(Read access)

WE7 - WE13 + (RBEN - CSN) — 3 - (RBEN7- CSN) ns

WE39 CSx_B Valid to ADV_B Valid WE14 - WE6 + (ADVA - CSA) — 3 + (ADVA - CSA) ns

WE40 ADV_B Invalid to CSx_B

Invalid (ADVL is asserted)

WE7 - WE15 - CSN — 3 - CSN ns

WE40A

(muxed

A/D)

CSx_B Valid to ADV_B Invalid WE14 - WE6 + (ADVN + ADVA

+ 1 - CSA)

-3 + (ADVN +

ADVA + 1 - CSA)

3 + (ADVN + ADVA +

1 - CSA)

WE41 CSx_B Valid to Output Data

Valid

WE16 - WE6 - WCSA — 3 - WCSA ns

WE41A

(muxed

A/D)

CSx_B Valid to Output Data

Valid

WE16 - WE6 + (WADVN +

WADVA + ADH + 1 - WCSA)

— 3 + (WADVN +

WADVA + ADH + 1 -

WCSA)

WE42 Output Data Invalid to CSx_B

Invalid

WE17 - WE7 - CSN — 3 - CSN ns

MAXCO Output max. delay from internal

driving ADDR/control FFs to

chip outputs.

10 — — ns

MAXCS

Output max. delay from CSx

internal driving FFs to CSx out.

10 — —

MAXDI DATA MAXIMUM delay from

chip input data to its internal FF

5——

Electrical Characteristics

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Freescale Semiconductor 63

WE43 Input Data Valid to CSx_B

Invalid

MAXCO - MAXCSO + MAXDI MAXCO -

MAXCSO +

MAXDI

—ns

WE44 CSx_B Invalid to Input Data

invalid

00—ns

WE45 CSx_B Valid to BEy_B Valid

(Write access)

WE12 - WE6 + (WBEA - CSA) — 3 + (WBEA - CSA) ns

WE46 BEy_B Invalid to CSx_B Invalid

(Write access)

WE7 - WE13 + (WBEN - CSN) — -3 + (WBEN - CSN) ns

MAXDTI DTACK MAXIMUM delay from

chip dtack input to its internal

FF + 2 cycles for

synchronization

———

WE47 Dtack Active to CSx_B Invalid MAXCO - MAXCSO + MAXDTI MAXCO -

MAXCSO +

MAXDTI

—ns

WE48 CSx_B Invalid to Dtack invalid 0 0 — ns

1Parameters WE4... WE21 value see column BCD = 0 in Table 53.

2All config. parameters (CSA,CSN,WBEA,WBEN,ADVA,ADVN,OEN,OEA,RBEA & RBEN) are in cycle units.

3CS Assertion. This bit field determines when CS signal is asserted during read/write cycles.

4CS Negation. This bit field determines when CS signal is negated during read/write cycles.

5t is axi_clk cycle time.

6BE Assertion. This bit field determines when BE signal is asserted during read cycles.

7BE Negation. This bit field determines when BE signal is negated during read cycles.

Table 54. WEIM Asynchronous Timing Parameters Table Relative Chip Select

Ref No. Parameter

Determination by

Synchronous measured

parameters 12

Min

Max

(If 133 MHz is

supported by SOC)

Unit

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Electrical Characteristics

4.6.8 SDRAM Controller Timing Parameters

4.6.8.1 Mobile DDR SDRAM Timing Parameters

Figure 32 shows the basic timing parameters for mobile DDR (mDDR) SDRAM. The timing parameters

for this diagram is shown in Table 55.

Figure 32. mDDR SDRAM Basic Timing Parameters

Table 55. mDDR SDRAM Timing Parameter Table

ID Parameter Symbol

200 MHz 166 MHz 133 MHz

Unit

Min Max Min Max Min Max

DD1 SDRAM clock high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK

DD2 SDRAM clock low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK

DD3 SDRAM clock cycle time tCK 5—6—7.5—ns

DD4 CS, RAS, CAS, CKE, WE setup time tIS1

1This parameter is affected by pad timing. if the slew rate is < 1 V/ns, 0.2 ns should be added to the value. For cmos65 pads

this is true for medium and low drive strengths.

0.9 — 1.1 — 1.3 — ns

DD5 CS, RAS, CAS, CKE, WE hold time tIH10.9 — 1.1 — 1.3 — ns

DD6 Address output setup time tIS10.9 — 1.1 — 1.3 — ns

DD7 Address output hold time tIH10.9 — 1.1 — 1.3 — ns

SDCLK

ADDR ROW/BA COL/BA

CAS

RAS

DD1

DD3

DD2

DD4

DD5

DD6 DD7

SDCLK

Electrical Characteristics

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Freescale Semiconductor 65

Figure 33 shows the timing diagram for mDDR SDRAM write cycle. The timing parameters for this

diagram is shown in Table 56.

Figure 33. mDDR SDRAM Write cycle Timing Diagram

Table 56. mDDR SDRAM Write Cycle Parameter Table1

1Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strengths is medium for SDCLK and high for

address and controls.

ID Parameter Symbol

200 MHz2

2SDRAM CLK and DQS related parameters are being measured from the 50% point. that is, high is defined as 50% of signal

value and low is defined as 50% as signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK

and SDCLK (inverted clock).

166 MHz 133 MHz

Unit

Min Max Min Max Min Max

DD17 DQ and DQM setup time to DQS tDS3

3This parameter is affected by pad timing. If the slew rate is < 1 V/ns, 0.1 ns should be increased to this value.

0.48 — 0.6 — 0.8 — ns

DD18 DQ and DQM hold time to DQS tDH10.48 — 0.6 — 0.8 — ns

DD19 Write cycle DQS falling edge to

SDCLK output setup time

tDSS 0.2 — 0.2 — 0.2 — tCK

DD20 Write cycle DQS falling edge to

SDCLK output hold time

tDSH 0.2 — 0.2 — 0.2 — tCK

DD21 Write command to first DQS latching

transition

tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK

DD22 DQS high level width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 tCK

DD23 DQS low level width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 tCK

SDCLK

SDCLK_B

DQS (output)

DQ (output)

DQM (output)

Data Data Data Data Data Data Data Data

DM DM DM DM DM DM DM DM

DD17

DD18 DD18

DD19 DD20

DD21 DD23

DD22

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Electrical Characteristics

Figure 34 shows the timing diagram for mDDR SDRAM DQ versus DQS and SDCLK read cycle. The

timing parameters for this diagram is shown in Table 57.

Figure 34. mDDR SDRAM DQ vs. DQS and SDCLK READ Cycle Timing Diagram

Table 57. mDDR SDRAM Read Cycle Parameter Table1

1Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strengths is medium for SDCLK and high for

address and controls

ID PARAMETER Symbol

200 MHz2

2SDRAM CLK and DQS related parameters are being measured from the 50% point. that is, high is defined as 50% of signal

value and low is defined as 50% as signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK

and SDCLK (inverted clock)

166 MHz 133 MHz

Unit

Min Max Min Max Min Max

DD24 DQS - DQ Skew (defines the Data valid window in read cycles

related to DQS)

tDQSQ — 0.4 — 0.75 — 0.85 ns

DD25 DQS DQ in HOLD time from DQS tQH 1.75 — 2.05 — 2.6 — ns

DD26 DQS output access time from SDCLK posedge tDQSCK 2 5 2 5.5 2 6.5 ns

SDCLK

SDCLK_B

DQS (input)

DQ (input) Data

Data

DataData

Data

DataData

DD26

DD24

DD25

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Freescale Semiconductor 67

4.6.9 DDR2 SDRAM Specific Parameters

Figure 35 shows the timing parameters for DDR2. The timing parameters for this diagram appear in

Table 58.

Figure 35. DDR2 SDRAM Basic Timing Parameters

Table 58. DDR2 SDRAM Timing Parameter Table

ID Parameter Symbol

SDCLK = 200 MHz

Unit

Min Max

DDR1 SDRAM clock high-level width tCH 0.45 0.55 tCK

DDR2 SDRAM clock low-level width tCL 0.45 0.55 tCK

DDR3 SDRAM clock cycle time tCK 5—ns

DDR4 CS, RAS, CAS, CKE, WE, ODT setup time tIS11.5 — ns

DDR5 CS, RAS, CAS, CKE, WE, ODT hold time tIH11.7 — ns

SDCLK

ADDR ROW/BA COL/BA

CAS

RAS

DDR1

DDR3

DDR2

DDR4

DDR5

DDR6 DDR7

SDCLK

ODT/CKE

DDR4

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Electrical Characteristics

NOTE

Measurements are taken from Vref to Vref (cross-point to cross-point), but

JEDEC timings for single-ended signals are defined from Vref to Vil(ac)

max or to Vih(ac) min.

DDR6 Address output setup time tIS11.7 — ns

DDR7 Address output hold time tIH11.5 — ns

1These values are for command/address slew rates of 1 V/ns and SDCLK / SDCLK_B differential slew rate of 2 V/ns. For

different values use the settings shown in Ta b l e 5 9 .

Table 59. Derating Values for DDR2-400 (SDCLK = 200 MHz)

Command /

Address

Slew Rate

(V/ns)

SDCLK Differential Slew Rates1,2

Unit2.0 V/ns 1.5 V/ns 1.0 V/ns

ΔtlS ΔtlH ΔtlS ΔtlH ΔtlS ΔtlH

4.0 +187 +94 +217 +124 +247 +154 ps

3.5 +179 +89 +209 +119 +239 +149 ps

3.0 +167 +83 +197 +113 +227 +143 ps

2.5 +150 +75 +180 +105 +210 +135 ps

2.0 +125 +45 +155 +75 +185 +105 ps

1.5 +83 +21 +113 +51 +143 +81 ps

1.0 +0 +0 +30 +30 +60 +60 ps

0.9 –11 –14 +19 +16 +49 +46 ps

0.8 –25 –31 +5 –1 +35 +29 ps

0.7 –43 –54 –13 –24 +17 +6 ps

0.6 –67 –83 –37 –53 –7 –23 ps

0.5 –110 –125 –80 –95 –50 –65 ps

0.4 –175 –188 –145 –158 –115 –128 ps

0.3 –285 –292 –255 –262 –225 –232 ps

0.25 –350 –375 –320 –345 –290 –315 ps

0.2 –525 –500 –495 –470 –465 –440 ps

0.15 –800 –708 –770 –678 –740 –648 ps

0.1 –1450 –1125 –1420 –1095 –1390 –1065 ps

Table 58. DDR2 SDRAM Timing Parameter Table (continued)

ID Parameter Symbol

SDCLK = 200 MHz

Unit

Min Max

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Freescale Semiconductor 69

Figure 36 shows the timing diagram for DDR2 SDRM write cycle. The timing parameters for this diagram

appear in Table 60.

Figure 36. DDR2 SDRAM Write Cycle Timing Diagram

1Test conditions are: Capacitance 15 pF for DDR contacts. Recommended drive strengths: Medium for SDCLK and High for

address and controls.

2SDCLK and DQS related parameters are measured from the 50% point. For example, a high is defined as 50% of the signal

value and a low is defined as 50% of the signal value. DDR SDRAM CLK parameters are measured at the crossing point of

SDCLK and SDCLK_B.

Table 60. DDR2 SDRAM Write Cycle Parameter Table

ID Parameter Symbol

SDCLK = 200 MHz

Unit

Min Max

DDR17 DQ & DQM setup time to DQS tDS 0.81

1- In order to meet these setup/hold values, write calibration should be performed to place the DQS in the middle of DQ

window. The minimum window width is 1.6ns (DDR17+DDR18).

- From DDR controller perspective, the timing is the same for both differential and single ended mode.

—ns

DDR18 DQ & DQM hold time to DQS tDH 0.82

2- In order to meet these setup/hold values, write calibration should be performed to place the DQS in the middle of DQ

window. The minimum window width is 1.6ns (DDR17+DDR18).

- From DDR controller perspective, the timing is the same for both differential and single ended mode.

—ns

DDR19 DQS falling edge to SDCLK output setup time tDSS 1.6 — ns

DDR20 DQS falling edge SDCLK output hold time tDSH 2.4 — ns

DDR21 DQS latching rising transitions to associated clock edges tDQSS -0.7 0.3 ns

DDR22 DQS high level width tDQSH 0.35 — tCK

DDR23 DQS low level width tDQSL 0.35 — tCK

SDCLK

SDCLK_B

DQS (output)

DQ (output)

DQM (output)

Data

Data Data Data Data Data Data Data

DM DM DM DM DM DM DM DM

DDR17

DDR18 DDR18

DDR21

DDR23

DDR22

DDR20

DDR19

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Electrical Characteristics

NOTE

Measurements are taken from Vref to Vref (cross-point to cross-point), but

JEDEC timings for single-ended signals are defined from Vref to Vil(ac)

max or to Vih(ac) min.

Table 61. Derating values for DDR2 Differential DQS1,2

Table 62. Derating values for DDR2 Single Ended DQS3,4

1. Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strengths is medium for SDCLK and high for

address and controls.

2. SDRAM CLK and DQS related parameters are being measured from the 50% point. that is, high is defined as 50% of signal

value and low is defined as 50% as signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK

and SDCLK (inverted clock).

3. Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strengths is medium for SDCLK and high for

address and controls.

4. SDRAM CLK and DQS related parameters are being measured from the 50% point. that is, high is defined as 50% of signal

value and low is defined as 50% as signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK

and SDCLK (inverted clock).

Electrical Characteristics

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Freescale Semiconductor 71

Figure 37 shows the timing diagram for DDR2 SDRM read cycle. The timing parameters for this diagram

appear in Table 63.

Figure 37. DDR2 SDRAM DQ versus DQS and SDCLK Read Cycle Timing Diagram

NOTE

It is recommended to perform read calibration process in order to achieve

the best performance.

Table 63. DDR2 SDRAM Read Cycle Parameter Table

ID Parameter Symbol

SDCLK = 200 MHz

Unit

Min Max

DDR241

1The actual timing may vary depending on read calibration settings. What is actually important for the controller is

DDR25-DDR24 which results in the minimum required DQ valid window width: 1.8ns-0.5ns = 1.3ns of minimum width.

DQS—DQ Skew (defines the Data valid window during read cycles

related to DQS).

tDQSQ —0.5ns

DDR252

2The actual timing may vary depending on read calibration settings. What is actually important for the controller is

DDR25-DDR24 which results in the minimum required DQ valid window width: 1.8ns-0.5ns = 1.3ns of minimum width.

DQ HOLD time from DQS tQH 1.8 — ns

SDCLK

SDCLK_B

DQS (input)

DQ (input)

DATA

DATADATA

DATA

DATADATA

DDR25

DDR24

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Electrical Characteristics

4.7 External Peripheral Interfaces

The following sections provide information on external peripheral interfaces.

4.7.1 CSPI Timing Parameters

This section describes the timing parameters of the CSPI. The CSPI has separate timing parameters for

master and slave modes. The nomenclature used with the CSPI modules and the respective routing of

these signals is shown in Table 64.

4.7.1.1 CSPI Master Mode Timing

Figure 38 depicts the timing of CSPI in Master mode and Table 65 lists the CSPI Master Mode timing

characteristics.

Figure 38. CSPI Master Mode Timing Diagram

Table 64. CSPI Nomenclature and Routing

Module I/O Access

eCSPI1 CSPI11, USBH1, and DI1 via IOMUX

1This set of BGA contacts is labeled CSPI, but is actually an eCSPI channel

eCSPI2 NANDF and USBH1 via IOMUX

CSPI NANDF, USBH1, SD1, SD2, and GPIO via IOMUX

Table 65. CSPI Master Mode Timing Parameters

ID Parameter Symbol Min Max Unit

CS1 SCLK Cycle Time tclk 60 — ns

CS2 SCLK High or Low Time tSW 26 — ns

CS3 SCLK Rise or Fall1tRISE/FALL ——ns

CS4 SSx pulse width tCSLH 26 — ns

CS1

CS7

CS2

CS4

CS6 CS5

CS8 CS9

SCLK

SSx

MOSI

MISO

RDY

CS10

CS3

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Freescale Semiconductor 73

4.7.1.2 CSPI Slave Mode Timing

Figure 39 depicts the timing of CSPI in Slave mode. Table 66 lists the CSPI Slave Mode timing

characteristics.

Figure 39. CSPI Slave Mode Timing Diagram

CS5 SSx Lead Time (Slave Select

setup time)

tSCS 26 — ns

CS6 SSx Lag Time (SS hold time) tHCS 26 — ns

CS7 MOSI Propagation Delay

(CLOAD =20pF)

tPDmosi –1 21 ns

CS8 MISO Setup Time tSmiso 5—ns

CS9 MISO Hold Time tHmiso 5—ns

CS10 RDY to SSx Time2tSDRY 5—ns

1See specific I/O AC parameters Section 4.5, “I/O AC Parameters”

2SPI_RDY is sampled internally by ipg_clk and is asynchronous to all other CSPI signals.

Table 66. CSPI Slave Mode Timing Parameters

ID Parameter Symbol Min Max Unit

CS1 SCLK Cycle Time tclk 60 — ns

CS2 SCLK High or Low Time tSW 26 — ns

CS4 SSx pulse width tCSLH 26 — ns

CS5 SSx Lead Time (SS setup time) tSCS 26 — ns

CS6 SSx Lag Time (SS hold time) tHCS 26 — ns

CS7 MOSI Setup Time tSmosi 5—ns

Table 65. CSPI Master Mode Timing Parameters (continued)

ID Parameter Symbol Min Max Unit

CS1

CS7 CS8

CS2

CS4

CS6 CS5

CS9

SCLK

SSx

MISO

MOSI

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Electrical Characteristics

4.7.2 eCSPI Timing Parameters

This section describes the timing parameters of the eCSPI. The eCSPI has separate timing parameters for

master and slave modes. The nomenclature used with the CSPI modules and the respective routing of these

signals is shown in Table 64.

4.7.2.1 eCSPI Master Mode Timing

Figure 40 depicts the timing of eCSPI in Master mode and Table 67 lists the eCSPI Master Mode timing

characteristics.

Figure 40. eCSPI Master Mode Timing Diagram

CS8 MOSI Hold Time tHmosi 5—ns

CS9 MISO Propagation Delay (CLOAD =20pF) t

PDmiso 035ns

Table 67. eCSPI Master Mode Timing Parameters

ID Parameter Symbol Min Max Unit

CS1 eCSPIx_CLK Cycle Time–Read

eCSPIx_CLK Cycle Time–Write

tclk 60

—ns

CS2 eCSPIx_CLK High or Low Time tSW 6—ns

CS3 eCSPIx_CLK Rise or Fall tRISE/FALL ——ns

CS4 eCSPIx_CS_x pulse width tCSLH 15 — ns

CS5 eCSPIx_CS_x Lead Time (CS setup time) tSCS 5—ns

CS6 eCSPIx_CS_x Lag Time (CS hold time) tHCS 5—ns

CS7 eCSPIx_DO Setup Time tSmosi 5—ns

Table 66. CSPI Slave Mode Timing Parameters (continued)

ID Parameter Symbol Min Max Unit

CS1

CS7 CS8

CS2

CS4

CS6 CS5

CS9 CS10

eCSPIx_CLK

eCSPIx_CS_x

eCSPIx_DO

eCSPIx_DI

eCSPIx_DRYN1

CS11

CS3

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Freescale Semiconductor 75

4.7.2.2 eCSPI Slave Mode Timing

Figure 41 depicts the timing of eCSPI in Slave mode and Table 68 lists the eCSPI Slave Mode timing

characteristics.

Figure 41. eCSPI Slave Mode Timing Diagram

CS8 eCSPIx_DO Hold Time tHmosi 5—ns

CS9 eCSPIx_DI Setup Time tSmiso 5—ns

CS10 eCSPIx_DI Hold Time tHmiso 5—ns

CS11 eCSPIx_DRYN Setup Time tSDRY 5—ns

Table 68. eCSPI Slave Mode Timing Parameters

ID Parameter Symbol Min Max Unit

CS1 eCSPIx_CLK Cycle Time–Read

eCSPIx_CLK Cycle Time–Write

tclk 60

—ns

CS2 eCSPIx_CLK High or Low Time tSW 6—ns

CS3 eCSPIx_CLK Rise or Fall tRISE/FALL ——ns

CS4 eCSPIx_CS_x pulse width tCSLH 15 — ns

CS5 eCSPIx_CS_x Lead Time (CS setup time) tSCS 5—ns

CS6 eCSPIx_CS_x Lag Time (CS hold time) tHCS 5—ns

CS7 eCSPIx_DO Setup Time tSmosi 5—ns

CS8 eCSPIx_DO Hold Time tHmosi 5—ns

CS9 eCSPIx_DI Setup Time tSmiso 5—ns

CS10 eCSPIx_DI Hold Time tHmiso 5—ns

Table 67. eCSPI Master Mode Timing Parameters (continued)

ID Parameter Symbol Min Max Unit

CS1

CS7 CS8

CS2

CS4

CS6 CS5

CS9CS10

eCSPIx_CLK

eCSPIx_CS_x

eCSPIx_DI

eCSPIx_DO

CS3

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Electrical Characteristics

4.7.3 eSDHCv2 Timing Parameters

This section describes the electrical information of the eSDHCv2.

Figure 42 depicts the timing of eSDHCv2, and Table 69 lists the eSDHCv2 timing characteristics.

Figure 42. eSDHCv2 Timing

Table 69. eSDHCv2 Interface Timing Specification

ID Parameter Symbols Min Max Unit

Card Input Clock

SD1 Clock Frequency (Low Speed) fPP10400kHz

Clock Frequency (SD/SDIO Full Speed/High Speed) fPP20 25/50 MHz

Clock Frequency (MMC Full Speed/High Speed) fPP30 20/52 MHz

Clock Frequency (Identification Mode) fOD 100 400 kHz

SD2 Clock Low Time tWL 7—ns

SD3 Clock High Time tWH 7—ns

SD4 Clock Rise Time tTLH —3ns

SD5 Clock Fall Time tTHL —3ns

eSDHC Output/Card Inputs CMD, DAT (Reference to CLK)

SD64eSDHC Output Delay tOD –33ns

eSDHC Input / Card Outputs CMD, DAT (Reference to CLK)

SD1

SD3

SD5

SD4

SD7

MMCx_CMD

output from eSDHCv2 to card

MMCx_DAT_1

......

MMCx_DAT_7

MMCx_DAT_0

MMCx_CMD

input from card to eSDHCv2

MMCx_DAT_1

......

MMCx_DAT_3

MMCx_DAT_0

MMCx_CLK

SD2

SD8

SD6

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4.7.4 FEC AC Timing Parameters

This section describes the electrical information of the Fast Ethernet Controller (FEC) module. The FEC

is designed to support both 10 and 100 Mbps Ethernet/IEEE 802.3 networks. An external transceiver

interface and transceiver function are required to complete the interface to the media. The FEC supports

the 10/100 Mbps MII (18 pins in total) and the 10 Mbps-only 7-wire interface, which uses 7 of the MII

pins, for connection to an external Ethernet transceiver. For the pin list of MII and 7-wire, see i.MX51

Multimedia Applications Processor Reference Manual (MCIMX51RM).

This section describes the AC timing specifications of the FEC.

4.7.4.1 MII Receive Signal Timing

The MII receive signal timing involves the FEC_RXD[3:0], FEC_RX_DV, FEC_RX_ER, and

FEC_RX_CLK signals. The receiver functions correctly up to a FEC_RX_CLK maximum frequency of

25 MHz + 1%. There is no minimum frequency requirement but the processor clock frequency must

exceed twice the FEC_RX_CLK frequency. Table 70 lists the MII receive channel signal timing

parameters and Figure 43 shows MII receive signal timings.

SD7 eSDHC Input Setup Time tISU 2.5 — ns

SD8 eSDHC Input Hold Time tIH52.5 — ns

1In low speed mode, card clock must be lower than 400 kHz, voltage ranges from 2.7 to 3.6 V.

2In normal speed mode for SD/SDIO card, clock frequency can be any value between 0–25 MHz. In high-speed mode, clock

frequency can be any value between 0–50 MHz.

3In normal speed mode for MMC card, clock frequency can be any value between 0–20 MHz. In high-speed mode, clock

frequency can be any value between 0–52 MHz.

4Measurement taken with CLoad = 20 pF

5To satisfy hold timing, the delay difference between clock input and cmd/data input must not exceed 2 ns.

Table 70. MII Receive Signal Timing

Num Characteristic1

1FEC_RX_DV, FEC_RX_CLK, and FEC_RXD0 have same timing in 10 Mbps 7-wire interface mode.

Min Max Unit

M1 FEC_RXD[3:0], FEC_RX_DV, FEC_RX_ER to FEC_RX_CLK setup 5 — ns

M2 FEC_RX_CLK to FEC_RXD[3:0], FEC_RX_DV, FEC_RX_ER hold 5 — ns

M3 FEC_RX_CLK pulse width high 35% 65% FEC_RX_CLK period

M4 FEC_RX_CLK pulse width low 35% 65% FEC_RX_CLK period

Table 69. eSDHCv2 Interface Timing Specification (continued)

ID Parameter Symbols Min Max Unit

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Electrical Characteristics

Figure 43. MII Receive Signal Timing Diagram

4.7.4.2 MII Transmit Signal Timing

The MII transmit signal timing affects the FEC_TXD[3:0], FEC_TX_EN, FEC_TX_ER, and

FEC_TX_CLK signals. The transmitter functions correctly up to a FEC_TX_CLK maximum frequency

of 25 MHz + 1%. There is no minimum frequency requirement. In addition, the processor clock frequency

must exceed twice the FEC_TX_CLK frequency. Table 71 lists MII transmit channel timing parameters

and Figure 44 shows MII transmit signal timing diagram for the values listed in Table 71.

Figure 44. MII Transmit Signal Timing Diagram

Table 71. MII Transmit Signal Timing

Num Characteristic1

1FEC_TX_EN, FEC_TX_CLK, and FEC_TXD0 have the same timing in 10 Mbps 7-wire interface mode.

Min Max Unit

M5 FEC_TX_CLK to FEC_TXD[3:0], FEC_TX_EN, FEC_TX_ER invalid 5 — ns

M6 FEC_TX_CLK to FEC_TXD[3:0], FEC_TX_EN, FEC_TX_ER valid — 20 ns

M7 FEC_TX_CLK pulse width high 35% 65% FEC_TX_CLK period

M8 FEC_TX_CLK pulse width low 35% 65% FEC_TX_CLK period

FEC_RX_CLK (input)

FEC_RXD[3:0] (inputs)

FEC_RX_DV

FEC_RX_ER

M1 M2

FEC_TX_CLK (input)

FEC_TXD[3:0] (outputs)

FEC_TX_EN

FEC_TX_ER

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Freescale Semiconductor 79

4.7.4.3 MII Async Inputs Signal Timing (FEC_CRS and FEC_COL)

Table 72 lists MII asynchronous inputs signal timing information. Figure 45 shows MII asynchronous

input timings listed in Table 72.

Figure 45. MII Async Inputs Timing Diagram

4.7.4.4 MII Serial Management Channel Timing (FEC_MDIO and FEC_MDC)

Table 73 lists MII serial management channel timings. Figure 46 shows MII serial management channel

timings listed in Table 73. The MDC frequency should be equal to or less than 2.5 MHz to be compliant

with the IEEE 802.3 MII specification. However the FEC can function correctly with a maximum MDC

frequency of 15 MHz.

Table 72. MII Async Inputs Signal Timing

Num Characteristic Min Max Unit

M91

1FEC_COL has the same timing in 10 Mbit 7-wire interface mode.

FEC_CRS to FEC_COL minimum pulse width 1.5 — FEC_TX_CLK period

Table 73. MII Transmit Signal Timing

ID Characteristic Min Max Unit

M10 FEC_MDC falling edge to FEC_MDIO output invalid (minimum propagation delay) 0 — ns

M11 FEC_MDC falling edge to FEC_MDIO output valid (max propagation delay) — 5 ns

M12 FEC_MDIO (input) to FEC_MDC rising edge setup 18 — ns

M13 FEC_MDIO (input) to FEC_MDC rising edge hold 0 — ns

M14 FEC_MDC pulse width high 40% 60% FEC_MDC period

M15 FEC_MDC pulse width low 40% 60% FEC_MDC period

FEC_CRS, FEC_COL

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Electrical Characteristics

Figure 46. MII Serial Management Channel Timing Diagram

4.7.5 Frequency Pre-Multiplier (FPM) Electrical Parameters (CKIL)

The FPM is a DPLL that converts a signal operating in the kilohertz region into a clock signal operating

in the megahertz region. The output of the FPM provides the reference frequency for the on-chip DPLLs.

Parameters of the FPM are listed in Table 74.

4.7.6 High-Speed I2C (HS-I2C) Timing Parameters

This section describes the timing parameters of the HS-I2C module. This module can operate in the

following modes: Standard, Fast and High speed.

NOTE

See the errata for the HS-I2C module in the i.MX51 Chip Errata. There are

two standard I2C modules that have no errata.

Table 74. FPM Specifications

Parameter Min Typ Max Unit

Reference clock frequency range—CKIL 32 32.768 256 kHz

FPM output clock frequency range 8 — 33 MHz

FPM multiplication factor (test condition is changed by a factor of 2) 128 — 1024 —

Lock-in time1

1plrf = 1 cycle assumed missed + x cycles for reset deassert + y cycles for calibration and lock x[ts] = {2,3,5,9};

y[ts] = {7,8,10,14}; where ts is the chosen time scale of the reference clock. In this case reference clock = 32 kHz which makes

ts = 0, therefore total time required for achieving lock is 10(1+2+7) cycles or 312.5 µs.

— — 312.5 µs

Cycle-to-cycle frequency jitter (peak to peak) — 8 20 ns

FEC_MDC (output)

FEC_MDIO (output)

M14

M15

M10

M11

M12 M13

FEC_MDIO (input)

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Freescale Semiconductor 81

4.7.6.1 Standard and Fast Mode Timing Parameters

Figure 47 depicts the standard and fast mode timings of HS-I2C module, and Table 75 lists the timing

characteristics.

Figure 47. HS-I2C Standard and Fast Mode Bus Timing

Table 75. HS-I2C Timing Parameters—Standard and Fast Mode

ID Parameter

Standard Mode Fast Mode

Unit

Min Max Min Max

IC1 SCLH cycle time 10 — 2.5 — µs

IC2 Hold time (repeated) START condition 4.0 — 0.6 — µs

IC3 Set-up time for STOP condition 4.0 — 0.6 — µs

IC4 Data hold time 01

1A device must internally provide a hold time of at least 300 ns for SDAH signal in order to bridge the undefined region of the

falling edge of SCLH.

3.452

2The maximum hold time has only to be met if the device does not stretch the LOW period (ID no IC6) of the SCLH signal

010.92µs

IC5 HIGH Period of SCLH Clock 4.0 — 0.6 — µs

IC6 LOW Period of the SCLH Clock 4.7 — 1.3 — µs

IC7 Set-up time for a repeated START condition 4.7 — 0.6 — µs

IC8 Data set-up time 250 — 1003

3A Fast-mode I2C-bus device can be used in a Standard-mode I2C-bus system, but the requirement of Set-up time (ID No IC8)

of 250 ns must then be met. This automatically is the case if the device does not stretch the LOW period of the SCLH signal.

If such a device does stretch the LOW period of the SCLH signal, it must output the next data bit to the SDAH line max_rise_time

(ID No IC10) + data_setup_time (ID No IC8) = 1000 + 250 = 1250 ns (according to the Standard-mode I2C-bus specification)

before the SCLH line is released.

—ns

IC9 Bus free time between a STOP and START condition 4.7 — 1.3 — µs

IC10 Rise time of both SDAH and SCLH signals — 1000 20+0.1Cb4

4Cb = total capacitance of one bus line in pF.

300 ns

IC11 Fall time of both SDAH and SCLH signals — 300 20+0.1Cb4300 ns

IC12 Capacitive load for each bus line (Cb) — 100 — 100 pF

IC10 IC11 IC9

IC2 IC8 IC4 IC7 IC3

IC6

IC10

IC5

IC11 START STOP START

START

SDAH

SCLH

IC1

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Electrical Characteristics

4.7.6.2 High-Speed Mode Timing Parameters

Figure 48 depicts the high-speed mode timings of HS-I2C module, and Table 76 lists the timing

characteristics.

Figure 48. High-Speed Mode Timing

Table 7 6. HS-I2C High-Speed Mode Timing Parameters

ID Parameter

High-Speed Mode

Unit

Min Max

IC1 SCLH cycle time 10 3.4 MHz

IC2 Setup time (repeated) START condition 160 — ns

IC3 Hold time (repeated) START condition 160 — ns

IC4 LOW Period of the SCLH Clock 160 — ns

IC5 HIGH Period of SCLH Clock 60 — ns

IC6 Data set-up time 10 — ns

IC7 Data hold time 01

1A device must internally provide a hold time of at least 300 ns for SDAH signal in order to bridge the undefined region of the

falling edge of SCLH.

70 ns

IC8 Rise time of SCLH 10 40 ns

IC9 Rise time of SCLH signal after a repeated START condition and after an acknowledge bit 10 80 ns

IC10 Fall time of SCLH signal 10 40 ns

IC11 Rise time of SDAH signal 10 80 ns

IC12 Fall time of SDAH signal 10 80 ns

IC13 Set-up time for STOP condition 160 — ns

IC14 Capacitive load for each bus line (Cb) — 100 pF

IC11 IC12

IC3 IC6 IC7 IC2 IC13

IC4

IC9

IC5

IC10 START STOP START

START

SDAH

SCLH

IC1

IC8

Electrical Characteristics

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Freescale Semiconductor 83

4.7.7 I2C Module Timing Parameters

This section describes the timing parameters of the I2C Module. Figure 49 depicts the timing of I2C

module, and Table 77 lists the I2C Module timing characteristics.

Figure 49. I2C Bus Timing

Table 77. I2C Module Timing Parameters

ID Parameter

Standard Mode

Supply Voltage =

1.65 V–1.95 V, 2.7 V–3.3 V

Fast Mode

Supply Voltage =

2.7 V–3.3 V Unit

Min Max Min Max

IC1 I2CLK cycle time 10 — 2.5 — µs

IC2 Hold time (repeated) START condition 4.0 — 0.6 — µs

IC3 Set-up time for STOP condition 4.0 — 0.6 — µs

IC4 Data hold time 01

1A device must internally provide a hold time of at least 300 ns for I2DAT signal in order to bridge the undefined region of the

falling edge of I2CLK.

3.452

2The maximum hold time has only to be met if the device does not stretch the LOW period (ID no IC5) of the I2CLK signal

010.92µs

IC5 HIGH Period of I2CLK Clock 4.0 — 0.6 — µs

IC6 LOW Period of the I2CLK Clock 4.7 — 1.3 — µs

IC7 Set-up time for a repeated START condition 4.7 — 0.6 — µs

IC8 Data set-up time 250 — 1003

3A Fast-mode I2C-bus device can be used in a Standard-mode I2C-bus system, but the requirement of Set-up time (ID No IC7)

of 250 ns must be met. This automatically is the case if the device does not stretch the LOW period of the I2CLK signal.

If such a device does stretch the LOW period of the I2CLK signal, it must output the next data bit to the I2DAT line

max_rise_time (IC9) + data_setup_time (IC7) = 1000 + 250 = 1250 ns (according to the Standard-mode I2C-bus specification)

before the I2CLK line is released.

—ns

IC9 Bus free time between a STOP and START condition 4.7 — 1.3 — µs

IC10 Rise time of both I2DAT and I2CLK signals — 1000 20 + 0.1Cb4

4Cb = total capacitance of one bus line in pF.

300 ns

IC11 Fall time of both I2DAT and I2CLK signals — 300 20 + 0.1Cb4300 ns

IC12 Capacitive load for each bus line (Cb) — 400 — 400 pF

IC10 IC11 IC9

IC2 IC8 IC4 IC7 IC3

IC6

IC10

IC5

IC11 START STOP START

START

I2DAT

I2CLK

IC1

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Electrical Characteristics

4.7.8 Image Processing Unit (IPU) Module Parameters

The purpose of the IPU is to provide comprehensive support for the flow of data from an image sensor

and/or to a display device. This support covers all aspects of these activities:

• Connectivity to relevant devices—cameras, displays, graphics accelerators, and TV encoders.

• Related image processing and manipulation: display processing, image conversions, and other

related functions.

• Synchronization and control capabilities such as avoidance of tearing artifacts.

4.7.8.1 Sensor Interface Timings

There are three camera timing modes supported by the IPU.

4.7.8.1.1 BT.656 and BT.1120 Video Mode

Smart camera sensors, which include imaging processing, usually support video mode transfer. They use

an embedded timing syntax to replace the SENSB_VSYNC and SENSB_HSYNC signals. The timing

syntax is defined by the BT.656/BT.1120 standards.

This operation mode follows the recommendations of ITU BT.656/ ITU BT.1120 specifications. The only

control signal used is SENSB_PIX_CLK. Start-of-frame and active-line signals are embedded in the data

stream. An active line starts with a SAV code and ends with a EAV code. In some cases, digital blanking

is inserted in between EAV and SAV code. The CSI decodes and filters out the timing-coding from the data

stream, thus recovering SENSB_VSYNC and SENSB_HSYNC signals for internal use. On BT.656 one

component per cycle is received over the SENSB_DATA bus. On BT.1120 two components per cycle are

received over the SENSB_DATA bus.

4.7.8.1.2 Gated Clock Mode

The SENSB_VSYNC, SENSB_HSYNC, and SENSB_PIX_CLK signals are used in this mode. See

Figure 50.

Figure 50. Gated Clock Mode Timing Diagram

SENSB_VSYNC

SENSB_HSYNC

SENSB_PIX_CLK

SENSB_DATA[19:0] invalid

1st byte

n+1th frame

invalid

1st byte

nth frame

Active Line

Start of Frame

Electrical Characteristics

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Freescale Semiconductor 85

A frame starts with a rising edge on SENSB_VSYNC (all the timings correspond to straight polarity of the

corresponding signals). Then SENSB_HSYNC goes to high and hold for the entire line. Pixel clock is valid

as long as SENSB_HSYNC is high. Data is latched at the rising edge of the valid pixel clocks.

SENSB_HSYNC goes to low at the end of line. Pixel clocks then become invalid and the CSI stops

receiving data from the stream. For next line the SENSB_HSYNC timing repeats. For next frame the

SENSB_VSYNC timing repeats.

4.7.8.1.3 Non-Gated Clock Mode

The timing is the same as the gated-clock mode (described in Section 4.7.8.1.2, “Gated Clock Mode”),

except for the SENSB_HSYNC signal, which is not used. See Figure 51. All incoming pixel clocks are

valid and cause data to be latched into the input FIFO. The SENSB_PIX_CLK signal is inactive (states

low) until valid data is going to be transmitted over the bus.

Figure 51. Non-Gated Clock Mode Timing Diagram

The timing described in Figure 51 is that of a typical sensor. Some other sensors may have a slightly

different timing. The CSI can be programmed to support rising/falling-edge triggered SENSB_VSYNC;

active-high/low SENSB_HSYNC; and rising/falling-edge triggered SENSB_PIX_CLK.

4.7.8.2 Electrical Characteristics

Figure 52 shows the sensor interface timing diagram. SENSB_PIX_CLK signal described here is not

generated by the IPU. Table 78 shows the timing characteristics for the diagram shown in Figure 52.

Figure 52. Sensor Interface Timing Diagram

SENSB_VSYNC

SENSB_PIX_CLK

SENSB_DATA[19:0] invalid

1st byte

n+1th frame

invalid

1st byte

nth frame

Start of Frame

IP3

SENSB_DATA,

SENSB_VSYNC,

IP2 1/IP1

SENSB_PIX_CLK

(Sensor Output)

SENSB_HSYNC

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Electrical Characteristics

4.7.8.3 IPU Display Interface Signal Mapping

The IPU supports a number of display output video formats. Table 79 defines the mapping of the Display

Interface Pins used during various supported video interface formats.

Table 78. Sensor Interface Timing Characteristics

ID Parameter Symbol Min Max Unit

IP1 Sensor output (pixel) clock frequency Fpck 0.01 120 MHz

IP2 Data and control setup time Tsu 3 — ns

IP3 Data and control holdup time Thd 2 — ns

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Table 79. Video Signal Cross-Reference

i.MX51A LCD

Comment1

Port Name

(x=1,2)

RGB,

Signal

Name

(General)

RGB/TV Signal Allocation (Example) Smart

16-bit

RGB

18-bit

RGB

24-bit

RGB

8-bit

YCrCb2

16-bit

YCrCb

20-bit

YCrCb

Signal

Name

DISPx_DAT0 DAT[0] B[0] B[0] B[0] Y/C[0] C[0] C[0] DAT[0] The restrictions are as follows:

a) There are maximal three

continuous groups of bits that

could be independently mapped to

the external bus.

Groups should not be overlapped.

b) The bit order is expressed in

each of the bit groups, for example

B[0] = least significant blue pixel

bit

DISPx_DAT1 DAT[1] B[1] B[1] B[1] Y/C[1] C[1] C[1] DAT[1]

DISPx_DAT2 DAT[2] B[2] B[2] B[2] Y/C[2] C[2] C[2] DAT[2]

DISPx_DAT3 DAT[3] B[3] B[3] B[3] Y/C[3] C[3] C[3] DAT[3]

DISPx_DAT4 DAT[4] B[4] B[4] B[4] Y/C[4] C[4] C[4] DAT[4]

DISPx_DAT5 DAT[5] G[0] B[5] B[5] Y/C[5] C[5] C[5] DAT[5]

DISPx_DAT6 DAT[6] G[1] G[0] B[6] Y/C[6] C[6] C[6] DAT[6]

DISPx_DAT7 DAT[7] G[2] G[1] B[7] Y/C[7] C[7] C[7] DAT[7]

DISPx_DAT8 DAT[8] G[3] G[2] G[0] — Y[0] C[8] DAT[8]

DISPx_DAT9 DAT[9] G[4] G[3] G[1] — Y[1] C[9] DAT[9]

DISPx_DAT10 DAT[10] G[5] G[4] G[2] — Y[2] Y[0] DAT[10]

DISPx_DAT11 DAT[11] R[0] G[5] G[3] — Y[3] Y[1] DAT[11]

DISPx_DAT12 DAT[12] R[1] R[0] G[4] — Y[4] Y[2] DAT[12]

DISPx_DAT13 DAT[13] R[2] R[1] G[5] — Y[5] Y[3] DAT[13]

DISPx_DAT14 DAT[14] R[3] R[2] G[6] — Y[6] Y[4] DAT[14]

DISPx_DAT15 DAT[15] R[4] R[3] G[7] — Y[7] Y[5] DAT[15]

DISPx_DAT16 DAT[16] — R[4] R[0] — — Y[6] —

DISPx_DAT17 DAT[17] — R[5] R[1] — — Y[7] —

DISPx_DAT18 DAT[18] — — R[2] — — Y[8] —

DISPx_DAT19 DAT[19] — — R[3] — — Y[9] —

DISPx_DAT20 DAT[20] — — R[4] — — — —

DISPx_DAT21 DAT[21] — — R[5] — — — —

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Electrical Characteristics

DISPx_DAT22 DAT[22] — — R[6] — — — — —

DISPx_DAT23 DAT[23] — — R[7] — — — — —

DIx_DISP_CLK PixCLK — —

DIx_PIN1 — VSYNC_IN May be required for anti-tearing

DIx_PIN2 HSYNC — —

DIx_PIN3 VSYNC — VSYNC out

DIx_PIN4 — — Additional frame/row synchronous

signals with programmable timing

DIx_PIN5 — —

DIx_PIN6 — —

DIx_PIN7 — —

DIx_PIN8 — —

DIx_D0_CS — CS0 —

DIx_D1_CS — CS1 Alternate mode of PWM output for

contrast or brightness control

DIx_PIN11 — WR —

DIx_PIN12 — RD —

DIx_PIN13 — RS1 Register select signal

DIx_PIN14 — RS2 Optional RS2

DIx_PIN15 DRDY/DV DRDY Data validation/blank, data enable

DIx_PIN16 — — Additional data synchronous

signals with programmable

features/timing

DIx_PIN17 Q —

1 Signal mapping (both data and control/synchronization) is flexible. The table provides examples.

2This mode works in compliance with recommendation ITU-R BT.656. The timing reference signals (frame start, frame end, line

start, and line end) are embedded in the 8-bit data bus. Only video data is supported, transmission of non-video related data

during blanking intervals is not supported.

Table 79. Video Signal Cross-Reference (continued)

i.MX51A LCD

Comment1

Port Name

(x=1,2)

RGB,

Signal

Name

(General)

RGB/TV Signal Allocation (Example) Smart

16-bit

RGB

18-bit

RGB

24-bit

RGB

8-bit

YCrCb2

16-bit

YCrCb

20-bit

YCrCb

Signal

Name

Electrical Characteristics

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Freescale Semiconductor 89

4.7.8.4 IPU Display Interface Timing

The IPU Display Interface supports two kinds of display’s accesses: synchronous and asynchronous. There

are two groups of external interface pins to provide synchronous and asynchronous controls accordantly.

4.7.8.4.1 Synchronous Controls

The synchronous control is a signal that changes its value as a function either of a system or of an external

clock. This control has a permanent period and a permanent wave form.

There are special physical outputs to provide synchronous controls:

• The ipp_disp_clk is a dedicated base synchronous signal that is used to generate a base display

(component, pixel) clock for a display.

• The ipp_pin_1– ipp_pin_7 are general purpose synchronous pins, that can be used to provide

HSYNC, VSYNC, DRDY or any else independent signal to a display.

The IPU has a system of internal binding counters for internal events (like HSYNC/VSYCN and so on)

calculation. The internal event (local start point) is synchronized with internal DI_CLK. A suitable control

starts from the local start point with predefined UP and DOWN values to calculate control’s changing

points with half DI_CLK resolution. A full description of the counters system is in the IPU chapter of the

i.MX51 Multimedia Applications Processor Reference Manual (MCIMX51RM).

4.7.8.4.2 Asynchronous Controls

The asynchronous control is a data oriented signal that changes its a value with an output data according

to an additional internal flags coming with the data.

There are special physical outputs to provide asynchronous controls, as follows:

• The ipp_d0_cs and ipp_d1_cspins are dedicated to provide chip select signals to two displays

• The ipp_pin_11– ipp_pin_17 are general purpose asynchronous pins, that can be used to provide

WR. RD, RS or any else data oriented signal to display.

NOTE

The IPU has independent signal generators for asynchronous signals

toggling. When a DI decides to put a new asynchronous data in the bus, a

new internal start (local start point) is generated. The signals generators

calculate predefined UP and DOWN values to change pins states with half

DI_CLK resolution.

4.7.8.5 Synchronous Interfaces to Standard Active Matrix TFT LCD Panels

4.7.8.5.1 IPU Display Operating Signals

The IPU uses four control signals and data to operate a standard synchronous interface:

• IPP_DISP_CLK—Clock to display

• HSYNC—Horizontal synchronization

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Electrical Characteristics

• VSYNC—Vertical synchronization

• DRDY—Active data

All synchronous display controls are generated on base of an internal generated “local start point”. The

synchronous display controls can be placed on time axis with DI’s offset, up and down parameters. The

display access can be whole number of DI clock (Tdiclk) only. The IPP_DATA can not be moved relative

to the local start point.

4.7.8.5.2 LCD Interface Functional Description

Figure 53 depicts the LCD interface timing for a generic active matrix color TFT panel. In this figure

signals are shown with negative polarity. The sequence of events for active matrix interface timing is:

• DI_CLK internal DI clock, used for calculation of other controls.

• IPP_DISP_CLK latches data into the panel on its negative edge (when positive polarity is selected).

In active mode, IPP_DISP_CLK runs continuously.

• HSYNC causes the panel to start a new line. (Usually IPP_PIN_2 is used as HSYNC)

• VSYNC causes the panel to start a new frame. It always encompasses at least one HSYNC pulse.

(Usually IPP_PIN_3 is used as VSYNC)

• DRDY acts like an output enable signal to the CRT display. This output enables the data to be

shifted onto the display. When disabled, the data is invalid and the trace is off.

(For DRDY can be used either synchronous or asynchronous generic purpose pin as well.)

Figure 53. Interface Timing Diagram for TFT (Active Matrix) Panels

4.7.8.5.3 TFT Panel Sync Pulse Timing Diagrams

Figure 54 depicts the horizontal timing (timing of one line), including both the horizontal sync pulse and

the data. All shown on the figure parameters are programmable. All controls are started by corresponding

123 mm-1

HSYNC

VSYNC

HSYNC

LINE 1 LINE 2 LINE 3 LINE 4 LINE n-1 LINE n

DRDY

IPP_DISP_CLK

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 91

internal events—local start points. The timing diagrams correspond to inverse polarity of the

IPP_DISP_CLK signal and active-low polarity of the HSYNC, VSYNC and DRDY signals.

Figure 54. TFT Panels Timing Diagram—Horizontal Sync Pulse

Figure 55 depicts the vertical timing (timing of one frame). All parameters shown in the figure are

programmable.

Figure 55. TFT Panels Timing Diagram—Vertical Sync Pulse

DI clock

VSYNC

HSYNC

DRDY

D0 D1

IP5o

IP13o

IP9o

IP8o IP8

IP9

IP10

IP7

IP5

IP6

local start point

IPP_DISP_CLK

IPP_DATA

IP14

VSYNC

HSYNC

DRDY

Start of frame End of frame

IP12

IP15

IP13

IP11

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Electrical Characteristics

Table 80 shows timing characteristics of signals presented in Figure 54 and Figure 55.

Table 80. Synchronous Display Interface Timing Characteristics (Pixel Level)

ID Parameter Symbol Value Description Unit

IP5 Display interface clock period Tdicp (1) Display interface clock. IPP_DISP_CLK ns

IP6 Display pixel clock period Tdpcp DISP_CLK_PER_PIXEL

× Tdicp

Time of translation of one pixel to display,

DISP_CLK_PER_PIXEL—number of pixel

components in one pixel (1.n). The

DISP_CLK_PER_PIXEL is virtual

parameter to define Display pixel clock

period.

The DISP_CLK_PER_PIXEL is received by

DC/DI one access division to n

components.

IP7 Screen width time Tsw (SCREEN_WIDTH)

× Tdicp

SCREEN_WIDTH—screen width in,

interface clocks. horizontal blanking

included.

The SCREEN_WIDTH should be built by

suitable DI’s counter2.

IP8 HSYNC width time Thsw (HSYNC_WIDTH) HSYNC_WIDTH—Hsync width in DI_CLK

with 0.5 DI_CLK resolution. Defined by DI’s

counter.

IP9 Horizontal blank interval 1 Thbi1 BGXP × Tdicp BGXP—Width of a horizontal blanking

before a first active data in a line. (in

interface clocks). The BGXP should be built

by suitable DI’s counter.

IP10 Horizontal blank interval 2 Thbi2 (SCREEN_WIDTH -

BGXP - FW) × Tdicp

Width a horizontal blanking after a last

active data in a line. (in interface clocks)

FW—with of active line in interface clocks.

The FW should be built by suitable DI’s

counter.

IP12 Screen height Tsh (SCREEN_HEIGHT)

× Tsw

SCREEN_HEIGHT— screen height in lines

with blanking

The SCREEN_HEIGHT is a distance

between 2 VSYNCs.

The SCREEN_HEIGHT should be built by

suitable DI’s counter.

IP13 VSYNC width Tvsw VSYNC_WIDTH VSYNC_WIDTH—Vsync width in DI_CLK

with 0.5 DI_CLK resolution. Defined by DI’s

counter

IP14 Vertical blank interval 1 Tvbi1 BGYP × Tsw BGYP—width of first Vertical

blanking interval in line.The BGYP should

be built by suitable DI’s counter.

IP15 Vertical blank interval 2 Tvbi2 (SCREEN_HEIGHT -

BGYP - FH) × Tsw

width of second Vertical

blanking interval in line.The FH should be

built by suitable DI’s counter.

Electrical Characteristics

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Freescale Semiconductor 93

The maximal accuracy of UP/DOWN edge of controls is

IP5o Offset of IPP_DISP_CLK Todicp DISP_CLK_OFFSET

× Tdiclk

DISP_CLK_OFFSET— offset of

IPP_DISP_CLK edges from local start

point, in DI_CLK×2

(0.5 DI_CLK Resolution)

Defined by DISP_CLK counter

IP13o Offset of VSYNC Tovs VSYNC_OFFSET

× Tdiclk

VSYNC_OFFSET—offset of Vsync edges

from a local start point, when a Vsync

should be active, in DI_CLK×2

(0.5 DI_CLK Resolution).The

VSYNC_OFFSET should be built by

suitable DI’s counter.

IP8o Offset of HSYNC Tohs HSYNC_OFFSET

× Tdiclk

HSYNC_OFFSET—offset of Hsync edges

from a local start point, when a Hsync

should be active, in DI_CLK×2

(0.5 DI_CLK Resolution).The

HSYNC_OFFSET should be built by

suitable DI’s counter.

IP9o Offset of DRDY Todrdy DRDY_OFFSET

× Tdiclk

DRDY_OFFSET— offset of DRDY edges

from a suitable local start point, when a

corresponding data has been set on the

bus, in DI_CLK×2

(0.5 DI_CLK Resolution)

The DRDY_OFFSET should be built by

suitable DI’s counter.

1Display interface clock period immediate value.

DISP_CLK_PERIOD—number of DI_CLK per one Tdicp. Resolution 1/16 of DI_CLK

DI_CLK_PERIOD—relation of between programing clock frequency and current system clock frequency

Display interface clock period average value.

2DI’s counter can define offset, period and UP/DOWN characteristic of output signal according to programed parameters of the

counter. Same of parameters in the table are not defined by DI’s registers directly (by name), but can be generated by

corresponding DI’s counter. The SCREEN_WIDTH is an input value for DI’s HSYNC generation counter. The distance

between HSYNCs is a SCREEN_WIDTH.

Table 80. Synchronous Display Interface Timing Characteristics (Pixel Level) (continued)

ID Parameter Symbol Value Description Unit

Tdicp

Tdiclk

DISP_CLK_PERIOD

DI_CLK_PERIOD

-------------------------------------------------------

× for integer DISP_CLK_PERIOD

DI_CLK_PERIOD

-------------------------------------------------------,

Tdiclk floor DISP_CLK_PERIOD

DI_CLK_PERIOD

-------------------------------------------------------0.5 0.5±+

⎝⎠

⎛⎞

for fractional DISP_CLK_PERIOD

DI_CLK_PERIOD

-------------------------------------------------------,

⎩

⎪

⎨

⎪

⎧

Tdicp Tdiclk

DISP_CLK_PERIOD

DI_CLK_PERIOD

-------------------------------------------------------

×=

Accuracy 0.5 Tdiclk

×()0.75ns±=

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Electrical Characteristics

The maximal accuracy of UP/DOWN edge of IPP_DATA is

The DISP_CLK_PERIOD, DI_CLK_PERIOD parameters are programmed via registers.

Figure 56 shows the synchronous display interface timing diagram for access level. The

DISP_CLK_DOWN and DISP_CLK_UP parameters are set by using the register. Table 81 shows the

timing characteristics for the diagram shown in Figure 56.

Figure 56. Synchronous Display Interface Timing Diagram—Access Level

Table 81. Synchronous Display Interface Timing Characteristics (Access Level)

ID Parameter Symbol Min Typ1

1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display.

These conditions may be chip specific.

Max Unit

IP16 Display interface clock

low time

Tckl Tdicd-Tdicu–1.5 Tdicd2–Tdicu3Tdicd–Tdicu+1.5 ns

IP17 Display interface clock

high time

Tckh Tdicp–Tdicd+Tdicu–1.5 Tdicp–Tdicd+Tdicu Tdicp–Tdicd+Tdicu+1.5 ns

IP18 Data setup time Tdsu Tdicd–1.5 Tdicu — ns

IP19 Data holdup time Tdhd Tdicp–Tdicd–1.5 Tdicp–Tdicu — ns

IP20o Control signals offset

times (defines for each

pin)

Tocsu Tocsu–1.5 Tocsu Tocsu+1.5 —

IP20 Control signals setup

time to display interface

clock (defines for each

pin)

Tcsu Tdicd–1.5–Tocsu%Tdicp Tdicu — ns

Accuracy Tdiclk 0.75ns±=

IP19 IP18

IP20

VSYNC

IP17IP16

DRDY

HSYNC

other controls

IP20o

local start point

Tdicd

Tdicu

IPP_DISP_CLK

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 95

4.7.8.6 Interface to a TV Encoder

The interface has an 8-bit data bus, transferring a single 8-bit value (Y/U/V) in each cycle. The timing of

the interface is described in Figure 57.

NOTE

• The frequency of the clock DISP_CLK is 27 MHz (within 10%)

• The HSYNC, VSYNC signals are active low.

• The DRDY signal is shown as active high.

• The transition to the next row is marked by the negative edge of the

HSYNC signal. It remains low for a single clock cycle

• The transition to the next field/frame is marked by the negative edge of

the VSYNC signal. It remains low for at least one clock cycles

— At a transition to an odd field (of the next frame), the negative edges

of VSYNC and HSYNC coincide.

— At a transition is to an even field (of the same frame), they do not

coincide.

• The active intervals—during which data is transferred—are marked by

the HSYNC signal being high.

2Display interface clock down time

3Display interface clock up time

where CEIL(X) rounds the elements of X to the nearest integers towards infinity.

Tdicd 1

---T

diclk ceil×2 DISP_CLK_DOWN×

DI_CLK_PERIOD

-------------------------------------------------------------

⎝⎠

⎛⎞

Tdicu 1

---T

diclk ceil×2 DISP_CLK_UP×

DI_CLK_PERIOD

---------------------------------------------------

⎝⎠

⎛⎞

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Electrical Characteristics

Figure 57. TV Encoder Interface Timing Diagram

HSYNC

VSYNC

Cb Y CrCb Y Cr Y

Pixel Data Timing

Line and Field Timing - NTSC

Even Field Odd Field

Odd Field Even Field

624621

311308

Line and Field Timing - PAL

HSYNC

DRDY

VSYNC

HSYNC

DRDY

VSYNC

Even Field Odd Field

Odd Field Even Field

1523

262261

DRDY

HSYNC

DRDY

VSYNC

HSYNC

VSYNC

524 525 2 3 4 10

263 264 265 266 267 268 269 273

622 623 625 1 2 23

309 310 312 313 314 336

316315

DRDY

DISP_CLK

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 97

4.7.8.6.1 TV Encoder Performance Specifications

All the parameters in the table are defined under the following conditions:

Rset = 1.05 kΩ ±1%, resistor on VREFOUT pin to Ground

Rload = 37.5 Ω ±1%, output load to Ground

The TV encoder output specifications are shown in Table 82.

Table 82. TV Encoder Video Performance Specifications

Parameter Conditions Min Typ Max Unit

DAC STATIC PERFORMANCE

Resolution1 —— 10—Bits

Integral Nonlinearity (INL)2— — 1 2 LSBs

Differential Nonlinearity (DNL)2— — 0.6 1 LSBs

Channel-to-channel gain matching2——2—%

Full scale output voltage2Rset = 1.05 kΩ ±1%

Rload = 37.5 Ω±1%

1.24 1.35 1.45 V

DAC DYNAMIC PERFORMANCE

Spurious Free Dynamic Range (SFDR) Fout = 3.38 MHz

Fsamp = 216 MHz

—59—dBc

Spurious Free Dynamic Range (SFDR) Fout = 9.28 MHz

Fsamp = 297 MHz

—54—dBc

VIDEO PERFORMANCE IN SD MODE2, 3

Short Term Jitter (Line to Line) — — 2.5 — ±ns

Long Term Jitter (Field to Field) — — 3.5 — ±ns

Frequency Response 0-4.0 MHz –0.1 — 0.1 dB

5.75 MHz –0.7 — 0 dB

Luminance Nonlinearity — — 0.5 — ±%

Differential Gain — — 0.35 — %

Differential Phase — — 0.6 — Degrees

Signal-to-Noise Ratio (SNR) Flat field full bandwidth — 75 — dB

Hue Accuracy — — 0.8 — ±Degrees

Color Saturation Accuracy — — 1.5 — ±%

Chroma AM Noise — — –70 — dB

Chroma PM Noise — — –47 — dB

Chroma Nonlinear Phase — — 0.5 — ±Degrees

Chroma Nonlinear Gain — — 2.5 — ±%

Chroma/Luma Intermodulation — — 0.1 — ±%

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Electrical Characteristics

4.7.8.7 Asynchronous Interfaces

4.7.8.7.1 Standard Parallel Interfaces

The IPU has four signal generator machines for asynchronous signal. Each machine generates IPU’s

internal control levels (0 or 1) by UP and DOWN are defined in Registers. Each asynchronous pin has a

dynamic connection with one of the signal generators. This connection is redefined again with a new

display access (pixel/component) The IPU can generate control signals according to system 80/68

requirements. The burst length is received as a result from predefined behavior of the internal signal

generator machines.

The access to a display is realized by the following:

• CS (IPP_CS) chip select

• WR (IPP_PIN_11) write strobe

• RD (IPP_PIN_12) read strobe

• RS (IPP_PIN_13) Register select (A0)

Both system 80 and system 68k interfaces are supported for all described modes as depicted in Figure 58,

Figure 59, Figure 60, and Figure 61. The timing images correspond to active-low IPP_CS, WR and RD

signals.

Each asynchronous access is defined by an access size parameter. This parameter can be different between

different kinds of accesses. This parameter defines a length of windows, when suitable controls of the

current access are valid. A pause between two different display accesses can be guaranteed by programing

of suitable access sizes. There are no minimal/maximal hold/setup time hard defined by DI. Each control

signal can be switched at any time during access size.

Chroma/Luma Gain Inequality — — 1.0 — ±%

Chroma/Luma Delay Inequality — — 1.0 — ±ns

— ————

VIDEO PERFORMANCE IN HD MODE2

Luma Frequency Response 0-30 MHz –0.2 — 0.2 dB

Chroma Frequency Response 0-15 MHz,

YCbCr 422 mode

–0.2 — 0.2 dB

Luma Nonlinearity — — 3.2 — %

Chroma Nonlinearity — — 3.4 — %

Luma Signal-to-Noise Ratio 0-30 MHz — 62 — dB

Chroma Signal-to-Noise Ratio 0-15 MHz — 72 — dB

1Guaranteed by design

2Guaranteed by characterization

3Rset = VREFOUT's external resistor to ground = 1.05 kΩ

Table 82. TV Encoder Video Performance Specifications (continued)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 99

Figure 58. Asynchronous Parallel System 80 Interface (Type 1) Timing Diagram

Burst access mode with sampling by CS signal

Single access mode (all control signals are not active for one display interface clock after each display access)

IPP_CS

IPP_DATA

IPP_CS

IPP_DATA

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Electrical Characteristics

Figure 59. Asynchronous Parallel System 80 Interface (Type 2) Timing Diagram

Burst access mode with sampling by WR/RD signals

Single access mode (all control signals are not active for one display interface clock after each display access)

IPP_CS

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 101

Figure 60. Asynchronous Parallel System 68k Interface (Type 1) Timing Diagram

(READ/WRITE)

(ENABLE)

(READ/WRITE)

(ENABLE)

Burst access mode with sampling by CS signal

Single access mode (all control signals are not active for one display interface clock after each display access)

IPP_CS

IPP_DATA

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Electrical Characteristics

Figure 61. Asynchronous Parallel System 68k Interface (Type 2) TIming Diagram

Display operation can be performed with IPP_WAIT signal. The DI reacts to the incoming IPP_WAIT

signal with 2 DI_CLK delay. The DI finishes a current access and a next access is postponed until

IPP_WAIT release.

(READ/WRITE)

(ENABLE)

(READ/WRITE)

(ENABLE)

Burst access mode with sampling by ENABLE signal

Single access mode (all control signals are not active for one display interface clock after each display access)

IPP_CS

IPP_DATA

IPP_CS

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 103

Figure 62 shows timing of the parallel interface with IPP_WAIT control.

Figure 62. Parallel Interface Timing Diagram—Read Wait States

DI clock

IPP_DATA

IPP_WAIT

IPP_DATA_IN

waiting

IP39

IPP_CS

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Electrical Characteristics

4.7.8.7.2 Asynchronous Parallel Interface Timing Parameters

Figure 63 depicts timing of asynchronous parallel interfaces based on the system 80 and system 68k

interfaces. Table 84 shows the timing characteristics at display access level. Table 83 shows the timing

characteristics at the logical level—from configuration perspective. All timing diagrams are based on

active low control signals (signals polarity is controlled through the DI_DISP_SIG_POL register).

Figure 63. Asynchronous Parallel Interface Timing Diagram

Table 83. Asynchronous Display Interface Timing Parameters (Pixel Level)

ID Parameter Symbol Value Description Unit

IP27 Read system cycle time Tcycr ACCESS_SIZE_# predefined value in DI REGISTER ns

IP28a Address Write system cycle time Tcycwa ACCESS_SIZE_# predefined value in DI REGISTER ns

IP28d Data Write system cycle time Tcycwd ACCESS_SIZE_# predefined value in DI REGISTER ns

IP29 RS start Tdcsrr UP# RS strobe switch, predefined value

in DI REGISTER

IP30 CS start Tdcsc UP# CS strobe switch, predefined value

in DI REGISTER

DI clock

A0 D0 D1

PP_DATA_IN D2 D3

local start point

IP27

IP28d

IP28a

local start point

IP37

IP33

IP35

IP38

IP34

IP36

IP29

IP31

IP32

IP47 IP30

IPP_CS

IPP_DATA

Electrical Characteristics

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Freescale Semiconductor 105

IP31 CS hold Tdchc DOWN# CS strobe release, predefined

value in DI REGISTER

—

IP32 RS hold Tdchrr DOWN# RS strobe release, predefined

value in DI REGISTER

—

IP33 Read start Tdcsr UP# read strobe switch, predefined

value in DI REGISTER

IP34 Read hold Tdchr DOWN# read strobe release signal,

predefined value in DI REGISTER

IP35 Write start Tdcsw UP# write strobe switch, predefined

value in DI REGISTER

IP36 Controls hold time for write Tdchw DOWN# write strobe release, predefined

value in DI REGISTER

IP37 Slave device data delay1Tracc Delay of incoming data Physical delay of display’s data,

defined from Read access local

start point

IP38 Slave device data hold time3Troh Hold time of data on the buss Time that display read data is valid

in input bus

IP47 Read time point13 Tdrp Data sampling point Point of input data sampling by DI,

predefined in DC Microcode

—

1This parameter is a requirement to the display connected to the IPU.

Table 84. Asynchronous Parallel Interface Timing Parameters (Access Level)

ID Parameter Symbol Min Typ1Max Unit

IP27 Read system cycle time Tcycr Tdicpr–1.5 Tdicpr2Tdicpr+1.5 ns

IP28 Write system cycle time Tcycw Tdicpw–1.5 Tdicpw3Tdicpw+1.5 ns

IP29 RS start Tdcsrr Tdicurs–1.5 Tdicurs Tdicurs+1.5 ns

IP30 CS start Tdcsc Tdicucs–1.5 Tdicur Tdicucs+1.5 ns

IP31 CS hold Tdchc TdicdcsTdicucs–1.5 Tdicdcs4–Tdicucs5Tdicdcs–Tdicucs+1.5 ns

IP32 RS hold Tdchrr Tdicdrs–Tdicurs–1.5 Tdicdrs6–Tdicurs7Tdicdrs–Tdicurs+1.5 ns

IP33 Controls setup time for read Tdcsr Tdicur–1.5 Tdicur Tdicur+1.5 ns

IP34 Controls hold time for read Tdchr Tdicdr–Tdicur–1.5 Tdicdr8–Tdicur9Tdicdr–Tdicur+1.5 ns

IP35 Controls setup time for write Tdcsw Tdicuw–1.5 Tdicuw Tdicuw+1.5 ns

IP36 Controls hold time for write Tdchw Tdicdw–Tdicuw–1.5 Tdicpw10–Tdicuw11 Tdicdw–Tdicuw+1.5 ns

IP37 Slave device data delay12 Tracc 0 — Tdrp13–Tlbd14–Tdicur–1.5 ns

IP38 Slave device data hold time8Troh Tdrp–Tlbd–Tdicdr+1.5 — Tdicpr–Tdicdr–1.5 ns

Table 83. Asynchronous Display Interface Timing Parameters (Pixel Level) (continued)

ID Parameter Symbol Value Description Unit

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Electrical Characteristics

IP39 Setup time for wait signal Tswait — — — —

IP47 Read time point13 Tdrp Tdrp–1.5 Tdrp Tdrp+1.5 ns

1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display.

These conditions may be chip specific.

2Display period value for read

ACCESS_SIZE is predefined in REGISTER

3Display period value for write

ACCESS_SIZE is predefined in REGISTER

4Display control down for CS

DISP_DOWN is predefined in REGISTER

5Display control up for CS

DISP_UP is predefined in REGISTER

6Display control down for RS

DISP_DOWN is predefined in REGISTER

7Display control up for RS

DISP_UP is predefined in REGISTER

8Display control down for read

DISP_DOWN is predefined in REGISTER

Table 84. Asynchronous Parallel Interface Timing Parameters (Access Level) (continued)

ID Parameter Symbol Min Typ1Max Unit

Tdicpr TDI_CLK ceil×DI_ACCESS_SIZE_#

DI_CLK_PERIOD

---------------------------------------------------------

Tdicpw TDI_CLK ceil×

DI_ACCESS_SIZE_#

DI_CLK_PERIOD

---------------------------------------------------------

Tdicdcs 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Tdicucs 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdicdrs 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Tdicurs 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdicdr 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 107

4.7.8.8 Standard Serial Interfaces

The IPU supports the following types of asynchronous serial interfaces:

1. 3-wire (with bidirectional data line).

2. 4-wire (with separate data input and output lines).

3. 5-wire type 1 (with sampling RS by the serial clock).

4. 5-wire type 2 (with sampling RS by the chip select signal).

The IPU has four independent outputs and one input. The port can be configured to provide 3, 4, or 5-wire

interfaces.

Figure 64 depicts the timing diagram of the 3-wire serial interface. The timing diagrams correspond to

active-low IPP#_CS signal and the straight polarity of the IPP_CLK signal.

For this interface, a bidirectional data line is used outside the chip. The IPU still uses separate input and

output data lines (IPP_IND_DISPB_SD_D and IPP_DO_DISPB_SD_D). The I/O mux should provide

9Display control up for read

DISP_UP is predefined in REGISTER

10Display control down for read

DISP_DOWN is predefined in REGISTER

11Display control up for write

DISP_UP is predefined in REGISTER

12This parameter is a requirement to the display connected to the IPU

13Data read point

Note: DISP#_READ_EN—operand of DC’s MICROCDE READ command to sample incoming data

14Loop back delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a

chip-level output delay, board delays, a chip-level input delay, an IPU input delay. This value is chip specific.

Tdicur 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdicdrw 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Tdicuw 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdrp TDI_CLK ceil×DISP#_READ_EN

DI_CLK_PERIOD

-------------------------------------------------

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

108 Freescale Semiconductor

Electrical Characteristics

joining the internal data lines to the bidirectional external line according to the IPP_OBE_DISPB_SD_D

signal provided by the IPU.

Figure 64. 3-Wire Serial Interface Timing Diagram

Figure 65 depicts timing diagram of the 4-wire serial interface. For this interface, there are separate input

and output data lines both inside and outside the chip.

Figure 65. 4-Wire Serial Interface Timing Diagram

Preamble

DISPB_D#_CS

DISPB_SD_D_CLK

DISPB_SD_D RW RS

Input or output data

D7 D6 D5 D4 D3 D2 D1 D0

programed

delay

programed

delay

Preamble

DISPB_D#_CS

DISPB_SD_D_CLK

DISPB_SD_D RW RS

Output data

D7 D6 D5 D4 D3 D2 D1 D0

DISPB_SD_D

(Output)

(Input)

Preamble

DISPB_D#_CS

DISPB_SD_D_CLK

DISPB_SD_D RW RS

Input data

DISPB_SD_D D7 D6 D5 D4 D3 D2 D1 D0

(Output)

(Input)

Write

Read

programed

delay

programed

delay

programed

delay

programed

delay

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 109

Figure 66 depicts timing of the 5-wire serial interface. For this interface, a separate RS line is added.

Figure 66. 5-Wire Serial Interface Timing Diagram

Preamble

DISPB_D#_CS

DISPB_SD_D_CLK

DISPB_SD_D RW

Output data

D7 D6 D5 D4 D3 D2 D1 D0

DISPB_SD_D

(Output)

(Input)

Preamble

DISPB_D#_CS

DISPB_SD_D_CLK

DISPB_SD_D RW

Input data

DISPB_SD_D

D7 D6 D5 D4 D3 D2 D1 D0

(Output)

(Input)

Write

Read

DISPB_SER_RS

programed

delay

programed

delay

programed

delay

programed

delay

programed

delay

programed

delay

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

110 Freescale Semiconductor

Electrical Characteristics

4.7.8.8.1 Asynchronous Serial Interface Timing Parameters

Figure 67 depicts timing of the serial interface. Table 85 shows timing characteristics at display access

level.

Figure 67. Asynchronous Serial Interface Timing Diagram

Table 85. Asynchronous Serial Interface Timing Characteristics (Access Level)

ID Parameter Symbol Min Typ1Max Unit

IP48 Read system cycle time Tcycr Tdicpr–1.5 Tdicpr2Tdicpr+1.5 ns

IP49 Write system cycle time Tcycw Tdicpw–1.5 Tdicpw3Tdicpw+1.5 ns

IP50 Read clock low pulse width Trl Tdicdr–Tdicur–1.5 Tdicdr4–Tdicur5Tdicdr–Tdicur+1.5 ns

IP51 Read clock high pulse width Trh Tdicpr–Tdicdr+Tdicur–1.5 Tdicpr–Tdicdr+

Tdicur

Tdicpr–Tdicdr+Tdicur+

1.5

DI clock

IPP_DISPB_DO_SD_D

IPP_DO_DISPB_SER_CS

IPP_DO_DISPB_SER_RS

IPP_DO_DISPB_SD_D_CLK

IPP_IND_DISPB_SD_D

local start point

IP68

IP48, IP49, IP62, IP63

IP51,53

IP55, IP57, IP54, IP56,

IP65, IP67

IP60,

IP58

IP59

IP50, IP52

IP64, IP66

IP61

IP69

IP70

IP71

IP72

IP73

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 111

IP52 Write clock low pulse width Twl Tdicdw–Tdicuw–1.5 Tdicdw6–Tdicuw7Tdicdw–Tdicuw+1.5 ns

IP53 Write clock high pulse width Twh Tdicpw–Tdicdw+

Tdicuw–1.5

Tdicpw–Tdicdw+

Tdicuw

Tdicpw–Tdicdw+

Tdicuw+1.5

IP54 Controls setup time for read Tdcsr Tdicur–1.5 Tdicur — ns

IP55 Controls hold time for read Tdchr Tdicpr–Tdicdr–1.5 Tdicpr–Tdicdr — ns

IP56 Controls setup time for write Tdcsw Tdicuw–1.5 Tdicuw — ns

IP57 Controls hold time for write Tdchw Tdicpw–Tdicdw–1.5 Tdicpw–Tdicdw — ns

IP58 Slave device data delay8Tracc 0 — Tdrp9–Tlbd10-Tdicur-1.5 ns

IP59 Slave device data hold time8Troh Tdrp-Tlbd-Tdicdr+1.5 — Tdicpr-Tdicdr-1.5 ns

IP60 Write data setup time Tds Tdicdw-1.5 Tdicdw — ns

IP61 Write data hold time Tdh Tdicpw-Tdicdw-1.5 Tdicpw-Tdicdw — ns

IP62 Read period2Tdicpr Tdicpr-1.5 Tdicpr Tdicpr+1.5 ns

IP63 Write period3Tdicpw Tdicpw-1.5 Tdicpw Tdicpw+1.5 ns

IP64 Read down time4Tdicdr Tdicdr-1.5 Tdicdr Tdicdr+1.5 ns

IP65 Read up time5Tdicur Tdicur-1.5 Tdicur Tdicur+1.5 ns

IP66 Write down time6Tdicdw Tdicdw-1.5 Tdicdw Tdicdw+1.5 ns

IP67 Write up time7Tdicuw Tdicuw-1.5 Tdicuw Tdicuw+1.5 ns

IP68 Read time point9Tdrp Tdrp-1.5 Tdrp Tdrp+1.5 ns

IP69 Clock offset11 Toclk Toclk-1.5 Toclk Toclk+1.5 ns

IP70 RS up time12 Tdicurs Tdicurs–1.5 Tdicurs Tdicurs+1.5 ns

IP71 RS down time13 Tdicdrs Tdicdrs -1.5 Tdicdrs Tdicdrs+1.5 ns

IP72 CS up time14 Tdicucs Tdicucs –1.5 Tdicucs Tdicucs+1.5 ns

IP73 CS down time15 Tdicdcs Tdicdcs –1.5 Tdicdcs Tdicdcs+1.5 ns

1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display.

These conditions may be chip specific.

2Display interface clock period value for read

3Display interface clock period value for write

Table 85. Asynchronous Serial Interface Timing Characteristics (Access Level) (continued)

ID Parameter Symbol Min Typ1Max Unit

Tdicpr TDI_CLK ceil×DISP#_IF_CLK_PER_RD

DI_CLK_PERIOD

--------------------------------------------------------------------

Tdicpw TDI_CLK ceil×DISP#_IF_CLK_PER_WR

DI_CLK_PERIOD

----------------------------------------------------------------------

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

112 Freescale Semiconductor

Electrical Characteristics

4Display interface clock down time for read

5Display interface clock up time for read

6Display interface clock down time for write

7Display interface clock up time for write

8This parameter is a requirement to the display connected to the IPU

9Data read point

DISP_RD_EN is predefined in REGISTER

10Loop back delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a

chip-level output delay, board delays, a chip-level input delay, an IPU input delay. This value is chip specific.

11Display interface clock offset value

CLK_OFFSET is predefined in REGISTER

12Display RS up time

DISP_RS_UP is predefined in REGISTER

13Display RS down time

DISP_RS_DOWN is predefined in REGISTER

14Display RS up time

DISP_CS_UP is predefined in REGISTER

Tdicdr 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Tdicur 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdicdw 1

---T

DI_CLK ceil×2 DISP_DOWN_#×

DI_CLK_PERIOD

-----------------------------------------------------

⎝⎠

⎛⎞

Tdicuw 1

---T

DI_CLK ceil×2 DISP_UP_#×

DI_CLK_PERIOD

-----------------------------------------------

⎝⎠

⎛⎞

Tdrp TDI_CLK ceil×DISP_READ_EN

DI_CLK_PERIOD

-----------------------------------------------

Toclk TDI_CLK ceil×DISP_CLK_OFFSET

DI_CLK_PERIOD

--------------------------------------------------------

Tdicurs TDI_CLK ceil×DISP_RS_UP_#

DI_CLK_PERIOD

-----------------------------------------------

Tdicdrs TDI_CLK ceil×DISP_RS_DOWN_#

DI_CLK_PERIOD

------------------------------------------------------

Tdicucs TDI_CLK ceil×DISP_CS_UP_#

DI_CLK_PERIOD

-----------------------------------------------

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 113

4.7.9 1-Wire Timing Parameters

Figure 68 depicts the RPP timing and Table 86 lists the RPP timing parameters.

Figure 68. Reset and Presence Pulses (RPP) Timing Diagram

Figure 69 depicts Write 0 Sequence timing, and Table 87 lists the timing parameters.

Figure 69. Write 0 Sequence Timing Diagram

15Display RS down time

DISP_CS_DOWN is predefined in REGISTER.

Table 86. RPP Sequence Delay Comparisons Timing Parameters

ID Parameters Symbol Min Typ Max Unit

OW1 Reset Time Low tRSTL 480 511 — µs

OW2 Presence Detect High tPDH 15 — 60 µs

OW3 Presence Detect Low tPDL 60 — 240 µs

OW4 Reset Time High tRSTH 480 512 — µs

Table 87. WR0 Sequence Timing Parameters

ID Parameter Symbol Min Typ Max Unit

OW5 Write 0 Low Time tWR0_low 60 100 120 µs

OW6 Transmission Time Slot tSLOT OW5 117 120 µs

Tdicdcs TDI_CLK ceil×()

DISP_CS_DOWN_#

DI_CLK_PERIOD

------------------------------------------------------

One-Wire bus

DS2502 Tx

“Presence Pulse”

(BATT_LINE)

1-WIRE Tx

“Reset Pulse”

OW1

OW2

OW3

OW4

OW5

OW6

One-Wire bus

(BATT_LINE)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

114 Freescale Semiconductor

Electrical Characteristics

Figure 70 depicts Write 1 Sequence timing, Figure 71 depicts the Read Sequence timing, and Table 88

lists the timing parameters.

Figure 70. Write 1 Sequence Timing Diagram

Figure 71. Read Sequence Timing Diagram

4.7.10 Pulse Width Modulator (PWM) Timing Parameters

This section describes the electrical information of the PWM.The PWM can be programmed to select one

of three clock signals as its source frequency. The selected clock signal is passed through a prescaler before

being input to the counter. The output is available at the pulse-width modulator output (PWMO) external

pin.

Table 88. WR1 /RD Timing Parameters

ID Parameter Symbol Min Typ Max Unit

OW7 Write /Read Low Time tLOW1 1 5 15 µs

OW8 Transmission Time Slot tSLOT 60 117 120 µs

OW9 Release Time tRELEASE 15 — 45 µs

OW7

OW8

One-Wire bus

(BATT_LINE)

OW7

OW8

OW9

One-Wire bus

(BATT_LINE)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 115

Figure 72 depicts the timing of the PWM, and Table 89 lists the PWM timing parameters.

Figure 72. PWM Timing

4.7.11 P-ATA Timing Parameters

This section describes the timing parameters of the Parallel ATA module which are compliant with

ATA/ATAPI-5 specification.

Parallel ATA module can work on PIO/Multi-Word DMA/Ultra DMA transfer modes. Each transfer mode

has different data transfer rate, Ultra DMA mode 4 data transfer rate is up to 66 Mbyte/s. Parallel ATA

module interface consist of a total of 29 pins, Some pins act on different function in different transfer

mode. There are different requirements of timing relationships among the function pins conform with

ATA/ATAPI-5 specification and these requirements are configurable by the ATA module registers.

Table 89. PWM Output Timing Parameter

Ref. No. Parameter Min Max Unit

1 System CLK frequency1

1CL of PWMO = 30 pF

0 ipg_clk MHz

2a Clock high time 12.29 — ns

2b Clock low time 9.91 — ns

3a Clock fall time — 0.5 ns

3b Clock rise time — 0.5 ns

4a Output delay time — 9.37 ns

4b Output setup time 8.71 — ns

System Clock

2a 1

PWM Output

3a 4b

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

116 Freescale Semiconductor

Electrical Characteristics

Table 90 and Figure 73 define the AC characteristics of all the P-ATA interface signals on all data

transfer modes.

Figure 73. P-ATA Interface Signals Timing Diagram

The user needs to use level shifters for 5.0 V compatibility on the ATA interface. The i.MX51 P-ATA

interface is 3.3 V compatible.

The use of bus buffers introduces delay on the bus and introduces skew between signal lines. These factors

make it difficult to operate the bus at the highest speed (UDMA-4) when bus buffers are used. If fast

UDMA mode operation is needed, this may not be compatible with bus buffers.

Another area of attention is the slew rate limit imposed by the ATA specification on the ATA bus.

According to this limit, any signal driven on the bus should have a slew rate between 0.4 and 1.2 V/ns with

a 40 pF load. Not many vendors of bus buffers specify slew rate of the outgoing signals.

When bus buffers are used, the ata_data bus buffer is special. This is a bidirectional bus buffer, so a

direction control signal is needed. This direction control signal is ata_buffer_en. When its high, the bus

should drive from host to device. When its low, the bus should drive from device to host. Steering of the

signal is such that contention on the host and device tri-state busses is always avoided.

In the timing equations, some timing parameters are used. These parameters depend on the implementation

of the i.MX51 P-ATA interface on silicon, the bus buffer used, the cable delay and cable skew.

Table 90. AC Characteristics of All Interface Signals

ID Parameter Symbol Min Max Unit

SI1 Rising edge slew rate for any signal on ATA interface.1

1SRISE and SFALL shall meet this requirement when measured at the sender’s connector from 10–90% of full signal

amplitude with all capacitive loads from 15–40 pF where all signals have the same capacitive load value.

Srise — 1.25 V/ns

SI2 Falling edge slew rate for any signal on ATA interface (see note) Sfall — 1.25 V/ns

SI3 Host interface signal capacitance at the host connector Chost —20pF

ATA Interface Signals

SI1SI2

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 117

Table 91 shows ATA timing parameters.

Table 91. P-ATA Timing Parameters

Name Description Value/

Contributing Factor1

1Values provided where applicable.

T Bus clock period (ipg_clk_ata) Peripheral clock frequency

ti_ds Set-up time ata_data to ata_iordy edge (UDMA-in only)

UDMA0

UDMA1

UDMA2, UDMA3

UDMA4

15 ns

10 ns

7 ns

5 ns

ti_dh Hold time ata_iordy edge to ata_data (UDMA-in only)

UDMA0, UDMA1, UDMA2, UDMA3, UDMA4 5.0 ns

tco Propagation delay bus clock L-to-H to

ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack,

ata_data, ata_buffer_en

12.0 ns

tsu Set-up time ata_data

to bus clock L-to-H 8.5 ns

tsui Set-up time ata_iordy to bus clock H-to-L 8.5 ns

thi Hold time ata_iordy

to bus clock H to L 2.5 ns

tskew1 Max difference in propagation delay bus clock L-to-H to any of following signals

ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack,

ata_data (write), ata_buffer_en

7ns

tskew2 Max difference in buffer propagation delay for any of following signals

ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack,

ata_data (write), ata_buffer_en

Transceiver

tskew3 Max difference in buffer propagation delay for any of following signals ata_iordy,

ata_data (read)

Transceiver

tbuf Max buffer propagation delay Transceiver

tcable1 Cable propagation delay for ata_data Cable

tcable2 Cable propagation delay for control signals ata_dior, ata_diow, ata_iordy,

ata_dmack

Cable

tskew4 Max difference in cable propagation delay between ata_iordy and ata_data (read) Cable

tskew5 Max difference in cable propagation delay between (ata_dior, ata_diow,

ata_dmack) and ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_data(write)

Cable

tskew6 Max difference in cable propagation delay without accounting for ground bounce Cable

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

118 Freescale Semiconductor

Electrical Characteristics

4.7.11.1 PIO Mode Read Timing

Figure 74 shows timing for PIO read and Table 92 lists the timing parameters for PIO read.

Figure 74. PIO Read Timing Diagram

Table 92. PIO Read Timing Parameters

ATA

Parameter

from Figure 74 Value Controlling

Variable

t1 t1 t1 (min) = time_1 × T – (tskew1 + tskew2 + tskew5) time_1

t2 t2r t2 min) = time_2r × T – (tskew1 + tskew2 + tskew5) time_2r

t9 t9 t9 (min) = time_9 × T – (tskew1 + tskew2 + tskew6) time_3

t5 t5 t5 (min) = tco + tsu + tbuf + tbuf + tcable1 + tcable2 If not met, increase

time_2

t6 t6 0 —

tA tA tA (min) = (1.5 + time_ax) × T – (tco + tsui + tcable2 + tcable2 + 2×tbuf) time_ax

trd trd1 trd1 (max) = (–trd) + (tskew3 + tskew4)

trd1 (min) = (time_pio_rdx – 0.5)×T – (tsu + thi)

(time_pio_rdx – 0.5) × T > tsu + thi + tskew3 + tskew4

time_pio_rdx

t0 — t0 (min) = (time_1 + time_2 + time_9) × T time_1, time_2r, time_9

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 119

Figure 75 shows timing for PIO write and Table 93 lists the timing parameters for PIO write.

Figure 75. Multi-word DMA (MDMA) Timing

Table 93. PIO Write Timing Parameters

ATA

Parameter

from Figure 75 Value Controlling

Variable

t1 t1 t1 (min) = time_1 × T – (tskew1 + tskew2 + tskew5) time_1

t2 t2w t2 (min) = time_2w × T – (tskew1 + tskew2 + tskew5) time_2w

t9 t9 t9 (min) = time_9 × T – (tskew1 + tskew2 + tskew6) time_9

t3 — t3 (min) = (time_2w – time_on)× T – (tskew1 + tskew2 +tskew5) If not met, increase

time_2w

t4 t4 t4 (min) = time_4 × T – tskew1 time_4

tA tA tA = (1.5 + time_ax) × T – (tco + tsui + tcable2 + tcable2 + 2×tbuf) time_ax

t0 — t0(min) = (time_1 + time_2 + time_9) × T time_1, time_2r,

time_9

— — Avoid bus contention when switching buffer on by making ton long enough —

— — Avoid bus contention when switching buffer off by making toff long enough —

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

120 Freescale Semiconductor

Electrical Characteristics

Figure 76 shows timing for MDMA read, Figure 77 shows timing for MDMA write, and Table 94 lists

the timing parameters for MDMA read and write.

Figure 76. MDMA Read Timing Diagram

Figure 77. MDMA Write Timing Diagram

Table 94. MDMA Read and Write Timing Parameters

ATA

Parameter

from

Figure 76,

Figure 77

Value Controlling

Variable

tm, ti tm tm (min) = ti (min) = time_m × T – (tskew1 + tskew2 + tskew5) time_m

td td, td1 td1.(min) = td (min) = time_d × T – (tskew1 + tskew2 + tskew6) time_d

tk tk tk.(min) = time_k × T – (tskew1 + tskew2 + tskew6) time_k

t0 — t0 (min) = (time_d + time_k) × T time_d, time_k

tg(read) tgr tgr (min-read) = tco + tsu + tbuf + tbuf + tcable1 + tcable2

tgr.(min-drive) = td – te(drive)

time_d

tf(read) tfr tfr (min-drive) = 0 —

tg(write) — tg (min-write) = time_d × T – (tskew1 + tskew2 + tskew5) time_d

tf(write) — tf (min-write) = time_k × T – (tskew1 + tskew2 + tskew6) time_k

tL — tL (max) = (time_d + time_k–2)×T – (tsu + tco + 2×tbuf + 2×tcable2) time_d, time_k

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 121

4.7.11.2 Ultra DMA (UDMA) Input Timing

Figure 78 shows timing when the UDMA in transfer starts, Figure 79 shows timing when the UDMA in

host terminates transfer, Figure 80 shows timing when the UDMA in device terminates transfer, and

Table 95 lists the timing parameters for UDMA in burst.

Figure 78. UDMA In Transfer Starts Timing Diagram

Figure 79. UDMA In Host Terminates Transfer Timing Diagram

tn, tj tkjn tn= tj= tkjn = (max(time_k,. time_jn) × T – (tskew1 + tskew2 + tskew6) time_jn

—ton

toff

ton = time_on × T – tskew1

toff = time_off × T – tskew1

—

Table 94. MDMA Read and Write Timing Parameters (continued)

ATA

Parameter

from

Figure 76,

Figure 77

Value Controlling

Variable

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

122 Freescale Semiconductor

Electrical Characteristics

Figure 80. UDMA In Device Terminates Transfer Timing Diagram

Table 95. UDMA In Burst Timing Parameters

ATA

Parameter

from

Figure 78,

Figure 79,

Figure 80

Description Controlling Variable

tack tack tack (min) = (time_ack × T) – (tskew1 + tskew2) time_ack

tenv tenv tenv (min) = (time_env × T) – (tskew1 + tskew2)

tenv (max) = (time_env × T) + (tskew1 + tskew2)

time_env

tds tds1 tds – (tskew3) – ti_ds > 0 tskew3, ti_ds, ti_dh

should be low enough

tdh tdh1 tdh – (tskew3) – ti_dh > 0

tcyc tc1 (tcyc – tskew) > T T big enough

trp trp trp (min) = time_rp × T – (tskew1 + tskew2 + tskew6) time_rp

—tx1

1There is a special timing requirement in the ATA host that requires the internal DIOW to go only high 3 clocks after the last

active edge on the DSTROBE signal. The equation given on this line tries to capture this constraint.

(time_rp × T) – (tco + tsu + 3T + 2 ×tbuf + 2×tcable2) > trfs (drive) time_rp

tmli tmli1 tmli1 (min) = (time_mlix + 0.4) × T time_mlix

tzah tzah tzah (min) = (time_zah + 0.4) × T time_zah

tdzfs tdzfs tdzfs = (time_dzfs × T) – (tskew1 + tskew2) time_dzfs

tcvh tcvh tcvh = (time_cvh ×T) – (tskew1 + tskew2) time_cvh

—ton

toff2

2Make ton and toff big enough to avoid bus contention.

ton = time_on × T – tskew1

toff = time_off × T – tskew1

—

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 123

4.7.11.3 UDMA Output Timing

Figure 81 shows timing when the UDMA out transfer starts, Figure 82 shows timing when the UDMA out

host terminates transfer, Figure 83 shows timing when the UDMA out device terminates transfer, and

Table 96 lists the timing parameters for UDMA out burst.

Figure 81. UDMA Out Transfer Starts Timing Diagram

Figure 82. UDMA Out Host Terminates Transfer Timing Diagram

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

124 Freescale Semiconductor

Electrical Characteristics

Figure 83. UDMA Out Device Terminates Transfer Timing Diagram

Table 96. UDMA Out Burst Timing Parameters

ATA

Parameter

from

Figure 81,

Figure 82,

Figure 83

Value Controlling

Variable

tack tack tack (min) = (time_ack × T) – (tskew1 + tskew2) time_ack

tenv tenv tenv (min) = (time_env × T) – (tskew1 + tskew2)

tenv (max) = (time_env × T) + (tskew1 + tskew2)

time_env

tdvs tdvs tdvs = (time_dvs × T) – (tskew1 + tskew2) time_dvs

tdvh tdvh tdvs = (time_dvh × T) – (tskew1 + tskew2) time_dvh

tcyc tcyc tcyc = time_cyc × T – (tskew1 + tskew2) time_cyc

t2cyc — t2cyc = time_cyc × 2 × T time_cyc

trfs1 trfs trfs = 1.6 × T + tsui + tco + tbuf + tbuf —

— tdzfs tdzfs = time_dzfs × T – (tskew1) time_dzfs

tss tss tss = time_ss × T – (tskew1 + tskew2) time_ss

tmli tdzfs_mli tdzfs_mli =max (time_dzfs, time_mli) × T – (tskew1 + tskew2) —

tli tli1 tli1 > 0 —

tli tli2 tli2 > 0 —

tli tli3 tli3 > 0 —

tcvh tcvh tcvh = (time_cvh ×T) – (tskew1 + tskew2) time_cvh

—ton

toff

ton = time_on × T – tskew1

toff = time_off × T – tskew1

—

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 125

4.7.12 SIM (Subscriber Identification Module) Timing

This section describes the electrical parameters of the SIM module. Each SIM module interface consists

of 12 signals (two separate ports each containing six signals). Typically a a port uses five signals.

The interface is designed to be used with synchronous SIM cards meaning the SIM module provides the

clock used by the SIM card. The clock frequency is typically 372 times the Tx/Rxdata rate, however the

SIM module can work with CLK frequencies of 16 times the Tx/Rx data rate.

There is no timing relationship between the clock and the data. The clock that the SIM module provides

to the SIM card is used by the SIM card to recover the clock from the data in the same manner as standard

UART data exchanges. All six signals (5 for bi-directional Tx/Rx) of the SIM module are asynchronous to

each other.

There are no required timing relationships between signals in normal mode. The SIM card is initiated by

the interface device; the SIM card responds with Answer to Reset. Although the SIM interface has no

defined requirements, the ISO-7816 defines reset and power-down sequences. (For detailed information,

see ISO-7816.)

Table 97 defines the general timing requirements for the SIM interface.

Figure 84. SIM Clock Timing Diagram

Table 97. SIM Timing Parameters, High Drive Strength

ID Parameter Symbol Min Max Unit

SI1 SIM Clock Frequency (SIMx_CLKy)1,

150% duty cycle clock

Sfreq 0.01 25 MHz

SI2 SIM Clock Rise Time (SIMx_CLKy)2

2With C = 50 pF

Srise —0.09×(1/Sfreq)ns

SI3 SIM Clock Fall Time (SIMx_CLKy)3

3With C = 50 pF

Sfall —0.09×(1/Sfreq)ns

SI4 SIM Input Transition Time

(SIMx_DATAy_RX_TX, SIMx_SIMPDy)

Strans 10 25 ns

SI5 SIM I/O Rise Time / Fall

Time(SIMx_DATAy_RX_TX)4

4With Cin = 30 pF, Cout = 30 pF

Tr/T f — 1 µs

SI6 SIM RST Rise Time / Fall Time(SIMx_RSTy)5

5With Cin = 30 pF

Tr/T f — 1 µs

SIMx_CLKy

SI2SI3

1/SI1

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126 Freescale Semiconductor

Electrical Characteristics

4.7.12.1 Reset Sequence

4.7.12.1.1 Cards with internal reset

The sequence of reset for this kind of SIM Cards is as follows (see Figure 85):

• After power up, the clock signal is enabled on SIMx_CLKy(time T0)

• After 200 clock cycles, RX must be high.

• The card must send a response on RX acknowledging the reset between 400 and 40000 clock cycles

after T0.

Figure 85. Internal-Reset Card Reset Sequence

4.7.12.1.2 Cards with Active Low Reset

The sequence of reset for this kind of card is as follows (see Figure 86):

• After power-up, the clock signal is enabled on SIMx_CLKy (time T0)

• After 200 clock cycles, SIMx_DATAy_RX_TX must be high.

• SIMx_RSTy must remain Low for at least 40000 clock cycles after T0 (no response is to be

received on RX during those 40000 clock cycles)

• SIMx_RSTy is set High (time T1)

• SIMx_RSTy must remain High for at least 40000 clock cycles after T1 and a response must be

received on SIMx_DATAy_RX_TX between 400 and 40000 clock cycles after T1.

SIMx_SVENy

SIMx_CLKy

SIMx_DATAy_RX_TX

response

< 200 clock cycles

< 40000 clock cycles400 clock cycles <

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 127

Figure 86. Active-Low-Reset Cards Reset Sequence

4.7.12.2 Power Down Sequence

Power down sequence for SIM interface is as follows:

• SIMx_SIMPDy port detects the removal of the SIM Card

• SIMx_RSTy goes Low

• SIMx_CLKy goes Low

• SIMx_DATAy_RX_TX goes Low

• SIMx_SVENy goes Low

SIMx_SVENy

SIMx_CLKy

SIMx_DATAy_RX_TX

response

SIMx_RSTy

< 200 clock cycles

< 40000 clock cycles400 clock cycles <

400000 clock cycles <

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

128 Freescale Semiconductor

Electrical Characteristics

Each of these steps is done in one CKIL period (usually 32 kHz). Power-down can be started because of

a SIM Card removal detection or launched by the processor. Figure 87 and Table 98 shows the usual

timing requirements for this sequence, with Fckil = CKIL frequency value.

Figure 87. SmartCard Interface Power Down AC Timing

Table 98. Timing Requirements for Power Down Sequence

ID Parameter Symbol Min Max Unit

SI7 SIM reset to SIM clock stop Srst2clk 0.9×1/Fckil 1.1×1/Fckil ns

SI8 SIM reset to SIM TX data low Srst2dat 1.8×1/Fckil 2.2×1/Fckil ns

SI9 SIM reset to SIM voltage enable low Srst2ven 2.7×1/Fckil 3.3×1/Fckil ns

SI10 SIM presence detect to SIM reset low Spd2rst 0.9×1/Fckil 1.1×1/Fckil ns

SIMx_SIMPDy

SIMx_RSTy

SIMx_CLKy

SIMx_DATAy_RX_TX

SIMx_SVENy

SI7

SI8

SI9

SI10

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 129

4.7.13 SCAN JTAG Controller (SJC) Timing Parameters

Figure 88 depicts the SJC test clock input timing. Figure 89 depicts the SJC boundary scan timing.

Figure 91 depicts the TRST timing with respect to TCK. Figure 90 depicts the SJC test access port. Signal

parameters are listed in Table 99.

Figure 88. Test Clock Input Timing Diagram

Figure 89. Boundary Scan (JTAG) Timing Diagram

TCK

(Input) VM VM

VIH

VIL

SJ1

SJ2 SJ2

SJ3

TCK

(Input)

Data

Inputs

Data

Outputs

Data

Outputs

Data

Outputs

VIH

VIL

Input Data Valid

Output Data Valid

SJ4 SJ5

SJ6

SJ7

SJ6

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130 Freescale Semiconductor

Electrical Characteristics

Figure 90. Test Access Port Timing Diagram

Figure 91. TRST Timing Diagram

Table 99. JTAG Timing

ID Parameter1,2

All Frequencies

Unit

Min Max

SJ0 TCK frequency of operation 1/(3•TDC)10.001 22 MHz

SJ1 TCK cycle time in crystal mode 45 — ns

SJ2 TCK clock pulse width measured at VM222.5 — ns

SJ3 TCK rise and fall times — 3 ns

SJ4 Boundary scan input data set-up time 5 — ns

SJ5 Boundary scan input data hold time 24 — ns

SJ6 TCK low to output data valid — 40 ns

SJ7 TCK low to output high impedance — 40 ns

SJ8 TMS, TDI data set-up time 5 — ns

TCK

(Input)

TDI

(Input)

TDO

(Output)

TDO

(Output)

TDO

(Output)

VIH

VIL

Input Data Valid

Output Data Valid

TMS

SJ8 SJ9

SJ10

SJ11

SJ10

TCK

(Input)

TRST

(Input)

SJ13

SJ12

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 131

4.7.14 SPDIF Timing Parameters

Table 100 shows the timing parameters for the Sony/Philips Digital Interconnect Format (SPDIF).

4.7.15 SSI Timing Parameters

This section describes the timing parameters of the SSI module. The connectivity of the serial synchronous

interfaces is summarized in Table 101.

SJ9 TMS, TDI data hold time 25 — ns

SJ10 TCK low to TDO data valid — 44 ns

SJ11 TCK low to TDO high impedance — 44 ns

SJ12 TRST assert time 100 — ns

SJ13 TRST set-up time to TCK low 40 — ns

1TDC = target frequency of SJC

2VM = mid-point voltage

Table 100. SPDIF Timing

Characteristics Symbol

All Frequencies

Unit

Min Max

SPDIFOUT output (load = 50 pF)

•Skew

• Transition rising

• Transition falling

——

—

1.5

24.2

31.3

SPDIFOUT output (load = 30 pF)

•Skew

• Transition rising

• Transition falling

——

—

1.5

13.6

18.0

Table 101. AUDMUX Port Allocation

Port Signal Nomenclature Type and Access

AUDMUX port 1 SSI 1 Internal

AUDMUX port 2 SSI 2 Internal

AUDMUX port 3 AUD3 External—AUD3 I/O

AUDMUX port 4 AUD4 External—EIM or CSPI1 I/O via IOMUX

AUDMUX port 5 AUD5 External—EIM or SD1 I/O via IOMUX

Table 99. JTAG Timing (continued)

ID Parameter1,2

All Frequencies

Unit

Min Max

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132 Freescale Semiconductor

Electrical Characteristics

NOTE

• The terms WL and BL used in the timing diagrams and tables refer to

Word Length (WL) and Bit Length (BL).

• The SSI timing diagrams use generic signal names wherein the names

used in the i.MX51 Multimedia Applications Processor Reference

Manual (MCIMX51RM) are channel specific signal names. For

example, a channel clock referenced in the IOMUXC chapter as

AUD3_TXC appears in the timing diagram as TXC.

4.7.15.1 SSI Transmitter Timing with Internal Clock

Figure 92 depicts the SSI transmitter internal clock timing and Table 102 lists the timing parameters for

the SSI transmitter internal clock.

Figure 92. SSI Transmitter Internal Clock Timing Diagram

AUDMUX port 6 AUD6 External—EIM or DISP2 via IOMUX

AUDMUX port 7 SSI 3 Internal

Table 101. AUDMUX Port Allocation (continued)

Port Signal Nomenclature Type and Access

SS19

SS1

SS2 SS4

SS3SS5

SS6 SS8

SS10 SS12

SS14

SS18

SS15

SS17

SS16

SS43

SS42

Note: SRXD input in synchronous mode only

TXC

(Output)

TXFS (wl)

(Output)

TXFS (bl)

(Output)

RXD

(Input)

TXD

(Output)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 133

NOTE

• All the timings for the SSI are given for a non-inverted serial clock

polarity (TSCKP/RSCKP = 0) and a non-inverted frame sync

(TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync have

been inverted, all the timing remains valid by inverting the clock signal

STCK/SRCK and/or the frame sync STFS/SRFS shown in the tables

and in the figures.

• All timings are on Audiomux Pads when SSI is being used for data

transfer.

• The terms WL and BL refer to Word Length (WL) and Bit Length (BL).

• ”Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.

• For internal Frame Sync operation using external clock, the FS timing is

same as that of Tx Data (for example, during AC97 mode of operation).

Table 102. SSI Transmitter Timing with Internal Clock

ID Parameter Min Max Unit

Internal Clock Operation

SS1 (Tx/Rx) CK clock period 81.4 — ns

SS2 (Tx/Rx) CK clock high period 36.0 — ns

SS3 (Tx/Rx) CK clock rise time — 6.0 ns

SS4 (Tx/Rx) CK clock low period 36.0 — ns

SS5 (Tx/Rx) CK clock fall time — 6.0 ns

SS6 (Tx) CK high to FS (bl) high — 15.0 ns

SS8 (Tx) CK high to FS (bl) low — 15.0 ns

SS10 (Tx) CK high to FS (wl) high — 15.0 ns

SS12 (Tx) CK high to FS (wl) low — 15.0 ns

SS14 (Tx/Rx) Internal FS rise time — 6.0 ns

SS15 (Tx/Rx) Internal FS fall time — 6.0 ns

SS16 (Tx) CK high to STXD valid from high impedance — 15.0 ns

SS17 (Tx) CK high to STXD high/low — 15.0 ns

SS18 (Tx) CK high to STXD high impedance — 15.0 ns

SS19 STXD rise/fall time — 6.0 ns

Synchronous Internal Clock Operation

SS42 SRXD setup before (Tx) CK falling 30 — ns

SS43 SRXD hold after (Tx) CK falling 0.0 — ns

SS52 Loading — 25.0 pF

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134 Freescale Semiconductor

Electrical Characteristics

4.7.15.2 SSI Receiver Timing with Internal Clock

Figure 93 depicts the SSI receiver internal clock timing and Table 103 lists the timing parameters for the

SSI receiver internal clock.

Figure 93. SSI Receiver Internal Clock Timing Diagram

Table 103. SSI Receiver Timing with Internal Clock

ID Parameter Min Max Unit

Internal Clock Operation

SS1 (Tx/Rx) CK clock period 81.4 — ns

SS2 (Tx/Rx) CK clock high period 36.0 — ns

SS3 (Tx/Rx) CK clock rise time — 6.0 ns

SS4 (Tx/Rx) CK clock low period 36.0 — ns

SS5 (Tx/Rx) CK clock fall time — 6.0 ns

SS7 (Rx) CK high to FS (bl) high — 15.0 ns

SS9 (Rx) CK high to FS (bl) low — 15.0 ns

SS11 (Rx) CK high to FS (wl) high — 15.0 ns

SS13 (Rx) CK high to FS (wl) low — 15.0 ns

SS20 SRXD setup time before (Rx) CK low 30 — ns

SS21 SRXD hold time after (Rx) CK low 0.0 — ns

SS50

SS48

SS1

SS4SS2

SS51

SS20

SS21

SS49

SS7 SS9

SS11 SS13

SS47

SS3

SS5

TXC

(Output)

TXFS (bl)

(Output)

TXFS (wl)

(Output)

RXD

(Input)

RXC

(Output)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 135

NOTE

• All the timings for the SSI are given for a non-inverted serial clock

polarity (TSCKP/RSCKP = 0) and a non-inverted frame sync

(TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync have

been inverted, all the timing remains valid by inverting the clock signal

STCK/SRCK and/or the frame sync STFS/SRFS shown in the tables

and in the figures.

• All timings are on Audiomux Pads when SSI is being used for data

transfer.

• “Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.

• The terms WL and BL refer to Word Length (WL) and Bit Length (BL).

• For internal Frame Sync operation using external clock, the FS timing is

same as that of Tx Data (for example, during AC97 mode of operation).

Oversampling Clock Operation

SS47 Oversampling clock period 15.04 — ns

SS48 Oversampling clock high period 6.0 — ns

SS49 Oversampling clock rise time — 3.0 ns

SS50 Oversampling clock low period 6.0 — ns

SS51 Oversampling clock fall time — 3.0 ns

Table 103. SSI Receiver Timing with Internal Clock (continued)

ID Parameter Min Max Unit

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136 Freescale Semiconductor

Electrical Characteristics

4.7.15.3 SSI Transmitter Timing with External Clock

Figure 94 depicts the SSI transmitter external clock timing and Table 104 lists the timing parameters for

the SSI transmitter external clock.

Figure 94. SSI Transmitter External Clock Timing Diagram

Table 104. SSI Transmitter Timing with External Clock

ID Parameter Min Max Unit

External Clock Operation

SS22 (Tx/Rx) CK clock period 81.4 — ns

SS23 (Tx/Rx) CK clock high period 36.0 — ns

SS24 (Tx/Rx) CK clock rise time — 6.0 ns

SS25 (Tx/Rx) CK clock low period 36.0 — ns

SS26 (Tx/Rx) CK clock fall time — 6.0 ns

SS27 (Tx) CK high to FS (bl) high –10.0 15.0 ns

SS29 (Tx) CK high to FS (bl) low 10.0 — ns

SS31 (Tx) CK high to FS (wl) high –10.0 15.0 ns

SS33 (Tx) CK high to FS (wl) low 10.0 — ns

SS37 (Tx) CK high to STXD valid from high impedance — 15.0 ns

SS38 (Tx) CK high to STXD high/low — 30 ns

SS45

SS33

SS24

SS26

SS25

SS23

Note: SRXD Input in Synchronous mode only

SS31

SS29

SS27

SS22

SS44

SS39

SS38

SS37

SS46

TXC

(Input)

TXFS (bl)

(Input)

TXFS (wl)

(Input)

TXD

(Output)

RXD

(Input)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 137

NOTE

• All the timings for the SSI are given for a non-inverted serial clock

polarity (TSCKP/RSCKP = 0) and a non-inverted frame sync

(TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync have

been inverted, all the timing remains valid by inverting the clock signal

STCK/SRCK and/or the frame sync STFS/SRFS shown in the tables

and in the figures.

• All timings are on Audiomux Pads when SSI is being used for data

transfer.

• “Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.

• The terms WL and BL refer to Word Length (WL) and Bit Length (BL).

• For internal Frame Sync operation using external clock, the FS timing is

same as that of Tx Data (for example, during AC97 mode of operation).

SS39 (Tx) CK high to STXD high impedance — 15.0 ns

Synchronous External Clock Operation

SS44 SRXD setup before (Tx) CK falling 10.0 — ns

SS45 SRXD hold after (Tx) CK falling 2.0 — ns

SS46 SRXD rise/fall time — 6.0 ns

Table 104. SSI Transmitter Timing with External Clock (continued)

ID Parameter Min Max Unit

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138 Freescale Semiconductor

Electrical Characteristics

4.7.15.4 SSI Receiver Timing with External Clock

Figure 95 depicts the SSI receiver external clock timing and Table 105 lists the timing parameters for the

SSI receiver external clock.

Figure 95. SSI Receiver External Clock Timing Diagram

Table 105. SSI Receiver Timing with External Clock

ID Parameter Min Max Unit

External Clock Operation

SS22 (Tx/Rx) CK clock period 81.4 — ns

SS23 (Tx/Rx) CK clock high period 36 — ns

SS24 (Tx/Rx) CK clock rise time — 6.0 ns

SS25 (Tx/Rx) CK clock low period 36 — ns

SS26 (Tx/Rx) CK clock fall time — 6.0 ns

SS28 (Rx) CK high to FS (bl) high –10 15.0 ns

SS30 (Rx) CK high to FS (bl) low 10 — ns

SS32 (Rx) CK high to FS (wl) high –10 15.0 ns

SS34 (Rx) CK high to FS (wl) low 10 — ns

SS35 (Tx/Rx) External FS rise time — 6.0 ns

SS36 (Tx/Rx) External FS fall time — 6.0 ns

SS40 SRXD setup time before (Rx) CK low 10 — ns

SS41 SRXD hold time after (Rx) CK low 2 — ns

SS24

SS34

SS35

SS30

SS28

SS26

SS25

SS23

SS40

SS22

SS32

SS36

SS41

TXC

(Input)

TXFS (bl)

(Input)

TXFS (wl)

(Input)

RXD

(Input)

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 139

NOTE

• All the timings for the SSI are given for a non-inverted serial clock

polarity (TSCKP/RSCKP = 0) and a non-inverted frame sync

(TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync have

been inverted, all the timing remains valid by inverting the clock signal

STCK/SRCK and/or the frame sync STFS/SRFS shown in the tables

and in the figures.

• All timings are on Audiomux Pads when SSI is being used for data

transfer.

• “Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.

• The terms WL and BL refer to Word Length (WL) and Bit Length (BL).

• For internal Frame Sync operation using external clock, the FS timing is

same as that of Tx Data (for example, during AC97 mode of operation).

4.7.16 UART

Table 106 shows the UART I/O configuration based on which mode is enabled.

4.7.16.1 UART Electrical

This section describes the electrical information of the UART module.

Table 106. UART I/O Configuration vs. Mode

Port

DTE Mode DCE Mode

Direction Description Direction Description

RTS Output RTS from DTE to DCE Input RTS from DTE to DCE

CTS Input CTS from DCE to DTE Output CTS from DCE to DTE

DTR Output DTR from DTE to DCE Input DTR from DTE to DCE

DSR Input DSR from DCE to DTE Output DSR from DCE to DTE

DCD Input DCD from DCE to DTE Output DCD from DCE to DTE

RI Input RING from DCE to DTE Output RING from DCE to DTE

TXD_MUX Input Serial data from DCE to DTE Output Serial data from DCE to DTE

RXD_MUX Output Serial data from DTE to DCE Input Serial data from DTE to DCE

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140 Freescale Semiconductor

Electrical Characteristics

4.7.16.1.1 UART RS-232 Serial Mode Timing

UART Transmitter

Figure 96 depicts the transmit timing of UART in RS-232 serial mode, with 8 data bit/1 stop bit format.

Table 107 lists the UART RS-232 serial mode transmit timing characteristics.

Figure 96. UART RS-232 Serial Mode Transmit Timing Diagram

UART Receiver

Figure 97 depicts the RS-232 serial mode receive timing, with 8 data bit/1 stop bit format. Table 108 lists

serial mode receive timing characteristics.

Figure 97. UART RS-232 Serial Mode Receive Timing Diagram

4.7.16.1.2 UART IrDA Mode Timing

The following subsections give the UART transmit and receive timings in IrDA mode.

Table 107. UART RS-232 Serial Mode Transmit Timing Diagram

ID Parameter Symbol Min Max Units

UA1 Transmit Bit Time tTbit 1/Fbaud_rate1-Tref_clk2

11/Fbaud_rate: Baud rate frequency. The maximum baud rate the UART can support is (ipg_perclk frequency)/16.

2Tref_clk: The period of UART reference clock ref_clk (ipg_perclk after RFDIV divider).

1/Fbaud_rate+Tref_clk —

Table 108. UART RS-232 Serial Mode Transmit Timing Diagram

ID Parameter Symbol Min Max Units

UA1 Receive Bit Time1

1The UART receiver can tolerate 1/(16×Fbaud_rate) tolerance in each bit. But accumulation tolerance in one frame must

not exceed 3/(16×Fbaud_rate).

tRbit 1/Fbaud_rate2-1/(16×Fbaud_rate)

2Fbaud_rate: Baud rate frequency. The maximum baud rate the UART can support is (ipg_perclk frequency)/16.

1/Fbaud_rate+1/(16×Fbaud_rate)—

Electrical Characteristics

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 141

UART IrDA Mode Transmitter

Figure 98 depicts the UART IrDA mode transmit timing, with 8 data bit/1 stop bit format. Table 109 lists

the transmit timing characteristics.

Figure 98. UART IrDA Mode Transmit Timing Diagram

UART IrDA Mode Receiver

Figure 99 depicts the UART IrDA mode receive timing, with 8 data bit/1 stop bit format. Table 110 lists

the receive timing characteristics.

Figure 99. UART IrDA Mode Receive Timing Diagram

Table 109. IrDA Mode Transmit Timing Parameters

ID Parameter Symbol Min Max Units

UA3 Transmit Bit Time in

IrDA mode

tTIRbit 1/Fbaud_rate1-Tref_clk2

1Fbaud_rate: Baud rate frequency. The maximum baud rate the UART can support is (ipg_perclk frequency)/16.

2Tref_clk: The period of UART reference clock ref_clk (ipg_perclk after RFDIV divider).

1/Fbaud_rate+Tref_clk —

UA4 Transmit IR Pulse

Duration

tTIRpulse (3/16)×(1Fbaud_rate)-Tref_clk (3/16)×(1Fbaud_rate)+Tref_clk —

Table 110. IrDA Mode Receive Timing Parameters

ID Parameter Symbol Min Max Units

UA5 Receive Bit Time1 in

IrDA mode

1The UART receiver can tolerate 1/(16×Fbaud_rate) tolerance in each bit. But accumulation tolerance in one frame must

not exceed 3/(16×Fbaud_rate).

tRIRbit 1/Fbaud_rate2-

1/(16×Fbaud_rate)

1/Fbaud_rate +

1/(16×Fbaud_rate)

—

UA6 Receive IR Pulse

Duration

tRIRpulse 1.41 us (5/16)×(1/Fbaud_rate)—

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

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Electrical Characteristics

4.7.17 USBOH3 Parameters

This section describes the electrical parameters of the USB OTG port and USB HOST ports. For on-chip

USB PHY parameters see Section 4.7.19, “USB PHY Parameters.”

4.7.17.1 USB Serial Interface

In order to support four serial different interfaces, the USB serial transceiver can be configured to operate

in one of four modes:

• DAT_SE0 bidirectional, 3-wire mode

• DAT_SE0 unidirectional, 6-wire mode

• VP_VM bidirectional, 4-wire mode

• VP_VM unidirectional, 6-wire mode

The USB controller does not support ULPI Serial mode. Only the legacy serial mode is supported.

Table 111 shows the serial mode signal map for 6-pin Full speed/Low speed (FsLs) serial mode.

Table 112 shows the serial mode signal map for 3-pin FsLs serial mode.

2Fbaud_rate: Baud rate frequency. The maximum baud rate the UART can support is (ipg_perclk frequency)/16.

Table 111. Serial Mode Signal Map for 6-pin FsLs Serial Mode

Signal Maps to Direction Description

tx_enable data(0) In Active high transmit enable

tx_dat data(1) In Transmit differential data on D+/D–

tx_se0 data(2) In Transmit single-ended zero on D+/D–

int data(3) Out Active high interrupt indication

Must be asserted whenever any unmasked interrupt occurs

rx_dp data(4) Out Single-ended receive data from D+

rx_dm data(5) Out Single-ended receive data from D–

rx_rcv data(6) Out Differential receive data from D+/D–

Reserved data(7) Out Reserved The PHY must drive this signal low

Table 112. Serial Mode Signal Map for 3-pin FsLs Serial Mode

Signal Maps to Direction Description

tx_enable data(0) In Active high transmit enable

dat data(1) I/O Transmit differential data on D+/D– when tx_enable is high

Receive differential data on D+/D– when tx_enable is low

se0 data(2) I/O Transmit single-ended zero on D+/D– when tx_enable is high

Receive single-ended zero on D+/D– when tx_enable is low

int data(3) Out Active high interrupt indication

Must be asserted whenever any unmasked interrupt occurs

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4.7.17.1.1 USB DAT_SE0 Bi-Directional Mode

Table 113 shows the signal definitions in DAT_SE0 bi-directional mode and Figure 100 shows the USB

transmit waveform in DAT_SE0 bi-directional mode.

Figure 100. USB Transmit Waveform in DAT_SE0 Bi-Directional Mode

Figure 101 shows the USB receive waveform in DAT_SE0 bi-directional mode and Table 114 shows the

definitions of USB receive waveform in DAT_SE0 bi-directional mode.

Figure 101. USB Receive Waveform in DAT_SE0 Bi-Directional Mode

Table 113. Signal Definitions—DAT_SE0 Bi-Directional Mode

Name Direction Signal Description

USB_TXOE_B Out Transmit enable, active low

USB_DAT_VP Out

TX data when USB_TXOE_B is low

Differential RX data when USB_TXOE_B is high

USB_SE0_VM Out

SE0 drive when USB_TXOE_B is low

SE0 RX indicator when USB_TXOE_B is high

USB_DAT_VP

USB_SE0_VM US1

US2

Tra nsmit

US4

USB_TXOE_B

US3

US8

US7

USB_DAT_VP

USB_SE0_VM

USB_TXOE_B

Receive

USB_SE0_VM

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Electrical Characteristics

4.7.17.1.2 USB DAT_SE0 Unidirectional Mode

Table 115 shows the signal definitions in DAT_SE0 unidirectional mode

Figure 102 and Figure 103 shows the USB transmit/receive waveform in DAT_SE0 uni-directional mode

respectively.

Figure 102. USB Transmit Waveform in DAT_SE0 Uni-directional Mode

Table 114. Definitions of USB Receive Waveform in DAT_SE0 Bi-Directional Mode

ID Parameter Signal Name Direction Min Max Unit Conditions/

Reference Signal

US1 TX Rise/Fall Time USB_DAT_VP Out — 5.0 ns 50 pF

US2 TX Rise/Fall Time USB_SE0_VM Out — 5.0 ns 50 pF

US3 TX Rise/Fall Time USB_TXOE_B Out — 5.0 ns 50 pF

US4 TX Duty Cycle USB_DAT_VP Out 49.0 51.0 % —

US7 RX Rise/Fall Time USB_DAT_VP In — 3.0 ns 35 pF

US8 RX Rise/Fall Time USB_SE0_VM In — 3.0 ns 35 pF

Table 115. Signal Definitions—DAT_SE0 Unidirectional Mode

Name Direction Signal Description

USB_TXOE_B Out Transmit enable, active low

USB_DAT_VP Out TX data when USB_TXOE_B is low

USB_SE0_VM Out SE0 drive when USB_TXOE_B is low

USB_VP1 In Buffered data on DP when USB_TXOE_B is high

USB_VM1 In Buffered data on DM when USB_TXOE_B is high

USB_RCV In Differential RX data when USB_TXOE_B is high

USB_DAT_VP

USB_SE0_VM US9

US10

Tr a n s m i t

US12

USB_TXOE_B

US11

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Figure 103. USB Receive Waveform in DAT_SE0 Uni-directional Mode

Table 116 shows the USB port timing specification in DAT_SE0 uni-directional mode.

4.7.17.1.3 USB VP_VM Bi-Directional Mode

Table 117 shows the signal definitions in VP_VM bi-directional mode. Figure 104 and Figure 105 shows

the USB transmit/receive waveform in VP_VM bi-directional mode respectively.

Table 116. USB Port Timing Specification in DAT_SE0 Uni-Directional Mode

ID Parameter Signal Name Signal

Source Min Max Unit Condition/

Reference Signal

US9 TX Rise/Fall Time USB_DAT_VP Out — 5.0 ns 50 pF

US10 TX Rise/Fall Time USB_SE0_VM Out — 5.0 ns 50 pF

US11 TX Rise/Fall Time USB_TXOE_B Out — 5.0 ns 50 pF

US12 TX Duty Cycle USB_DAT_VP Out 49.0 51.0 % —

US15 RX Rise/Fall Time USB_VP1 In — 3.0 ns 35 pF

US16 RX Rise/Fall Time USB_VM1 In — 3.0 ns 35 pF

US17 RX Rise/Fall Time USB_RCV In — 3.0 ns 35 pF

Table 117. Signal Definitions—VP_VM Bi-Directional Mode

Name Direction Signal Description

USB_TXOE_B Out Transmit enable, active low

USB_DAT_VP Out (Tx)

In (Rx)

TX VP data when USB_TXOE_B is low

RX VP data when USB_TXOE_B is high

USB_SE0_VM Out (Tx)

In (Rx)

TX VM data when USB_TXOE_B low

RX VM data when USB_TXOE_B high

USB_RCV In Differential RX data

US16

US15/US17

USB_DAT_VP

USB_TXOE_B

Receive

USB_SE0_VM

USB_RCV

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Electrical Characteristics

Figure 104. USB Transmit Waveform in VP_VM Bi-Directional Mode

Figure 105. USB Receive Waveform in VP_VM Bi-Directional Mode

Table 118 shows the USB port timing specification in VP_VM bi-directional mode.

Table 118. USB Port Timing Specification in VP_VM Bi-directional Mode

ID Parameter Signal Name Direction Min Max Unit Condition/Reference Signal

US18 TX Rise/Fall Time USB_DAT_VP Out — 5.0 ns 50 pF

US19 TX Rise/Fall Time USB_SE0_VM Out — 5.0 ns 50 pF

US20 TX Rise/Fall Time USB_TXOE_B Out — 5.0 ns 50 pF

US21 TX Duty Cycle USB_DAT_VP Out 49.0 51.0 % —

US22 TX Overlap USB_SE0_VM Out –3.0 3.0 ns USB_DAT_VP

USB_DAT_VP

USB_SE0_VM

US18

US19

Transmit

USB_TXOE_B

US20

US22

US21

US22

USB_DAT_VP

USB_SE0_VM

US26

US28 US27

US29

USB_RCV

Receive

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4.7.17.1.4 USB VP_VM Uni-Directional Mode

Table 119 shows the signal definitions in VP_VM uni-directional mode. Figure 106 and Figure 107

shows the USB transmit/receive waveform in VP_VM uni-directional mode respectively.

Figure 106. USB Transmit Waveform in VP_VM Unidirectional Mode

US26 RX Rise/Fall Time USB_DAT_VP In — 3.0 ns 35 pF

US27 RX Rise/Fall Time USB_SE0_VM In — 3.0 ns 35 pF

US28 RX Skew USB_DAT_VP In –4.0 4.0 ns USB_SE0_VM

US29 RX Skew USB_RCV In –6.0 2.0 ns USB_DAT_VP

Table 119. USB Signal Definitions—VP_VM Uni-Directional Mode

Name Direction Signal Description

USB_TXOE_B Out Transmit enable, active low

USB_DAT_VP Out TX VP data when USB_TXOE_B is low

USB_SE0_VM Out TX VM data when USB_TXOE_B is low

USB_VP1 In RX VP data when USB_TXOE_B is high

USB_VM1 In RX VM data when USB_TXOE_B is high

USB_RCV In Differential RX data

Table 118. USB Port Timing Specification in VP_VM Bi-directional Mode (continued)

ID Parameter Signal Name Direction Min Max Unit Condition/Reference Signal

USB_DAT_VP

USB_SE0_VM

US30

US31

Transmit

USB_TXOE_B

US32

US34

US33

US34

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Figure 107. USB Receive Waveform in VP_VM Uni-directional Mode

Table 120 shows the USB port timing specification in VP_VM uni-directional mode.

Table 120. USB Timing Specification in VP_VM Unidirectional Mode

ID Parameter Signal Direction Min Max Unit Conditions / Reference Signal

US30 TX Rise/Fall Time USB_DAT_VP Out — 5.0 ns 50 pF

US31 TX Rise/Fall Time USB_SE0_VM Out — 5.0 ns 50 pF

US32 TX Rise/Fall Time USB_TXOE_B Out — 5.0 ns 50 pF

US33 TX Duty Cycle USB_DAT_VP Out 49.0 51.0 % —

US34 TX Overlap USB_SE0_VM Out –3.0 3.0 ns USB_DAT_VP

US38 RX Rise/Fall Time USB_VP1 In — 3.0 ns 35 pF

US39 RX Rise/Fall Time USB_VM1 In — 3.0 ns 35 pF

US40 RX Skew USB_VP1 In –4.0 4.0 ns USB_VM1

US41 RX Skew USB_RCV In –6.0 2.0 ns USB_VP1

US38

USB_VM1

Receive

USB_RCV

USB_TXOE_B

US41

US40

US39

USB_VP1

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4.7.18 USB Parallel Interface Timing

Electrical and timing specifications of Parallel Interface are presented in the subsequent sections.

Table 121 shows the signal definitions in parallel mode. Figure 108 shows the USB transmit/receive

waveform in parallel mode. Table 122 shows the USB timing specification for ULPI parallel mode.

Figure 108. USB Transmit/Receive Waveform in Parallel Mode

Table 121. Signal Definitions—Parallel Interface (Normal ULPI)

Name Direction Signal Description

USB_Clk In Interface clock. All interface signals are synchronous to Clock.

USB_Data[7:0] I/O Bi-directional data bus, driven low by the link during idle. Bus

ownership is determined by Dir.

USB_Dir In Direction. Control the direction of the Data bus.

USB_Stp Out Stop. The link asserts this signal for 1 clock cycle to stop the data

stream currently on the bus.

USB_Nxt In Next. The PHY asserts this signal to throttle the data.

Table 122. USB Timing Specification for ULPI Parallel Mode

ID Parameter Min Max Unit Conditions/

Reference Signal

US15 Setup Time (Dir, Nxt in, Data in) 6 — ns 10 pF

US16 Hold Time (Dir, Nxt in, Data in) 0 — ns 10 pF

US17 Output delay Time (Stp out, Data out) for H3 routed to DISP2 I/O1

and H1

1H3 routed to NANDF I/O is recommended for Full and Low-Speed use only.

— 9 ns 10 pF

US17 Output delay Time (Stp out, Data out) for H2 — 11 ns 10 pF

USB_Stp

USB_Dir/Nxt

US17

US16

USB_Data

US15

US16

US15

US17

USB_Clk

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Electrical Characteristics

4.7.19 USB PHY Parameters

This section describes the USB PHY parameters.

4.7.19.1 USB PHY AC Parameters

Table 123 lists the AC timing parameters for USB PHY.

4.7.19.2 USB PHY Additional Electrical Parameters

Table 124 lists the parameters for additional electrical characteristics for USB PHY.

4.7.19.3 USB PHY System Clocking (SYSCLK)

Table 125 lists the USB PHY system clocking parameters.

Table 123. USB PHY AC Timing Parameters

Parameter Conditions Min Typ Max Unit

trise 1.5 Mbps

12 Mbps

480 Mbps

0.5

— 300

tfall 1.5 Mbps

12 Mbps

480 Mbps

0.5

— 300

Jitter 1.5 Mbps

12 Mbps

480 Mbps

——10

0.2

Table 124. Additional Electrical Characteristics for USB PHY

Parameter Conditions Min Typ Max Unit

Vcm DC

(dc level measured at receiver connector)

HS Mode

LS/FS Mode

–0.05

0.8

—0.5

2.5

Crossover Voltage LS Mode

FS Mode

1.3

—2

Power supply ripple noise

(analog 3.3 V)

<160 MHz –50 0 50 mV

Power supply ripple noise

(analog 2.5 V)

<1.2 MHz

>1.2 MHz

–10

–50

Power supply ripple noise

(Digital 1.2)

All conditions –50 0 50 mV

Table 125. USB PHY System Clocking Parameters

Parameter Conditions Min Typ Max Unit

Clock deviation — –150 — 150 ppm

Rise/fall time — — — 200 ps

Package Information and Contact Assignments

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4.7.19.4 USB PHY Voltage Thresholds

Table 126 lists the USB PHY voltage thresholds.

5 Package Information and Contact Assignments

This section includes the contact assignment information and mechanical package drawing.

5.1 19 x 19 mm Package Information

This section contains the outline drawing, signal assignment map, ground/power/reference ID (by ball grid

location) for the 19 ×19 mm, 0.8 mm pitch package.

Jitter (peak-peak) <1.2 MHz 0 — 50 ps

Jitter (peak-peak) >1.2 MHz 0 — 100 ps

Duty-cycle — 40 — 60 %

Table 126. VBUS Comparators Thresholds

Parameter Conditions Min Typ Max Unit

A-Device Session Valid — 0.8 1.4 2.0 V

B-Device Session Valid — 0.8 1.4 4.0 V

B-Device Session End — 0.2 0.45 0.8 V

VBUS Valid Comparator Threshold1

1For VBUS maximum rating, see Ta b le 1 1 on page 17

—4.44.64.75V

Table 125. USB PHY System Clocking Parameters (continued)

Parameter Conditions Min Typ Max Unit

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Package Information and Contact Assignments

5.1.1 BGA—Case 2017, 19 x 19 mm, 0.8 mm Pitch

Figure 109 shows the top view, bottom view, and side view of the 19 ×19 mm package.

Figure 109. 19 x 19 mm Package: Case 2017-01—0.8 mm Pitch

Package Information and Contact Assignments

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5.1.1.1 19 x 19 mm Package Drawing Notes

The following notes apply to Figure 109.

1All dimensions in millimeters.

2Dimensioning and tolerancing per ASME Y14.5M-1994.

3Maximum solder ball diameter measured parallel to Datum A.

4Datum A, the seating plane, is determined by the spherical crowns of the solder balls.

5Parallelism measurement shall exclude any effect of mark on top surface of package.

5.1.2 19 x 19 mm Signal Assignments, Power Rails, and I/O

Table 127 shows the device connection list and Table 128 displays an alpha-sorted list of the signal

assignments including associated power supplies.

5.1.2.1 19 x 19 mm Ground, Power, Sense, and Reference Contact Assignments

Table 127 shows the device connection list for ground, power, sense, and reference contact signals

alpha-sorted by name.

Table 127. 19 x 19 mm Ground, Power, Sense, and Reference Contact Assignments

Contact Name Contact Assignment

AHVDDRGB Y18, AA18

AHVSSRGB Y19, AA19

GND A1, A23, G5, H9, J8, J9, J10, J12, J13, J14, K8, K9, K10, K11, K12, K13, K14, L8, L9, L10, L11,L12,

L13, L14, M9, M10, M11, M12, M13, M14, M15, N8, N9, N10, N11, N12, N13, N14, N15, N16, P8,

P9, P10, P11, P12, P13, P14, P15, R8, R9, R10, R11,R12, R13, R14, R15, R16, T5, T16, AC1,

AC21, AC23

GND_ANA_PLL_A U7

GND_ANA_PLL_B U17

GND_DIG_PLL_A T7

GND_DIG_PLL_B V18

NGND_OSC V17

NGND_TV_BACK T15

NGND_USBPHY L16

NVCC_EMI U8, U9, U10, U11, U12, V7

NVCC_EMI_DRAM H6, J6, K6, L6, M6, N6, P6, R6, T6

NVCC_HS10 M16

NVCC_HS4_1 M18

NVCC_HS4_2 N18

NVCC_HS6 M17

NVCC_I2C T14

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Package Information and Contact Assignments

NVCC_IPU2 T18

NVCC_IPU4 G16

NVCC_IPU5 H17

NVCC_IPU6 J17

NVCC_IPU7 K17

NVCC_IPU8 P18

NVCC_IPU9 R18

NVCC_NANDF_A E6, F5

NVCC_NANDF_B G9

NVCC_NANDF_C G10

NVCC_OSC W17

NVCC_PER3 U18

NVCC_PER5 G15

NVCC_PER8 H16

NVCC_PER9 H10

NVCC_PER10 H11

NVCC_PER11 G11

NVCC_PER12 G12

NVCC_PER13 G13

NVCC_PER14 U13

NVCC_PER15 H15

NVCC_PER17 G14

NVCC_SRTC_POW U14

NVCC_TV_BACK U16

NVCC_USBPHY L17

RREFEXT K19

SGND J11

SVCC H14

SVDDGP F13

TVDAC_DHVDD V16

VBUS K20

VCC H13, J15, J16, K15, K16, L7, L15, M7, N7, N17, P7, P17, R17, T8, T9, T10, T11, T12, T17

VDD_ANA_PLL_A V6

Table 127. 19 x 19 mm Ground, Power, Sense, and Reference Contact Assignments (continued)

Contact Name Contact Assignment

Package Information and Contact Assignments

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5.1.2.2 19 x 19 mm, Signal Assignments, Power Rails, and I/O

Table 128 displays an alpha-sorted list of the signal assignments including power rails.

VDD_ANA_PLL_B W19

VDD_DIG_PLL_A U6

VDD_DIG_PLL_B W18

VDD_FUSE R7

VDDA G8, H8, H12, M8, P16, T13

VDDA33 L18

VDDGP F6, F7, F8, F9, F10, F11, F12, G6, G7, H7, J7, K7

VREFOUT U15

VREF R5

VREG K21

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

AUD3_BB_CK C8 NVCC_PER9 GPIO Input Keeper

AUD3_BB_FS A9 NVCC_PER9 GPIO Input Keeper

AUD3_BB_RXD B9 NVCC_PER9 GPIO Input Keeper

AUD3_BB_TXD E9 NVCC_PER9 GPIO Input Keeper

BOOT_MODE0 AB21 NVCC_PER3 LVIO Input 100 kΩ pull-up

BOOT_MODE1 AB22 NVCC_PER3 LVIO Input 100 kΩ pull-up

CKIH1 V19 NVCC_PER3 Analog Input Analog

CKIH2 AA20 NVCC_PER3 Analog Input Analog

CKIL Y16 NVCC_SRTC_POW GPIO Input Standard CMOS

CLK_SS AA21 NVCC_PER3 LVIO Input 100 kΩ pull-up

COMP2Y17 AHVDDRGB Analog Input Analog

CSI1_D10 R22 NVCC_HS10 HSGPIO Input Keeper

CSI1_D11 R23 NVCC_HS10 HSGPIO Input Keeper

CSI1_D12 P22 NVCC_HS10 HSGPIO Input Keeper

CSI1_D13 P23 NVCC_HS10 HSGPIO Input Keeper

CSI1_D14 M20 NVCC_HS10 HSGPIO Input Keeper

Table 127. 19 x 19 mm Ground, Power, Sense, and Reference Contact Assignments (continued)

Contact Name Contact Assignment

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Package Information and Contact Assignments

CSI1_D15 M21 NVCC_HS10 HSGPIO Input Keeper

CSI1_D16 N22 NVCC_HS10 HSGPIO Input Keeper

CSI1_D17 N23 NVCC_HS10 HSGPIO Input Keeper

CSI1_D18 M22 NVCC_HS10 HSGPIO Input Keeper

CSI1_D19 M23 NVCC_HS10 HSGPIO Input Keeper

CSI1_D8 E18 NVCC_PER8 GPIO Input Keeper

CSI1_D9 A21 NVCC_PER8 GPIO Input Keeper

CSI1_HSYNC A20 NVCC_PER8 GPIO Input Keeper

CSI1_MCLK B20 NVCC_PER8 GPIO Input Keeper

CSI1_PIXCLK F18 NVCC_PER8 GPIO Input Keeper

CSI1_VSYNC G18 NVCC_PER8 GPIO Input Keeper

CSI2_D12 B8 NVCC_PER9 GPIO Input Keeper

CSI2_D13 C7 NVCC_PER9 GPIO Input Keeper

CSI2_D14 L20 NVCC_HS4_1 HSGPIO Input Keeper

CSI2_D15 L21 NVCC_HS4_1 HSGPIO Input Keeper

CSI2_D16 L22 NVCC_HS4_1 HSGPIO Input Keeper

CSI2_D17 L23 NVCC_HS4_1 HSGPIO Input Keeper

CSI2_D18 D9 NVCC_PER9 GPIO Input Keeper

CSI2_D19 A8 NVCC_PER9 GPIO Input Keeper

CSI2_HSYNC C18 NVCC_PER8 GPIO Input Keeper

CSI2_PIXCLK E19 NVCC_PER8 GPIO Input Keeper

CSI2_VSYNC F19 NVCC_PER8 GPIO Input Keeper

CSPI1_MISO C10 NVCC_PER10 GPIO Input 100 kΩ pull-up

CSPI1_MOSI D10 NVCC_PER10 GPIO Input 100 kΩ pull-up

CSPI1_RDY C9 NVCC_PER10 GPIO Input Keeper

CSPI1_SCLK A10 NVCC_PER10 GPIO Input 100 kΩ pull-up

CSPI1_SS0 E10 NVCC_PER10 GPIO Input 100 kΩ pull-up

CSPI1_SS1 B10 NVCC_PER10 GPIO Input 100 kΩ pull-up

DI_GP1 H21 NVCC_IPU6 GPIO Input Keeper

DI_GP2 J19 NVCC_IPU6 GPIO Input Keeper

DI_GP3 H22 NVCC_IPU7 GPIO Input 100 kΩ pull-up

DI_GP4 J22 NVCC_IPU7 GPIO Input 100 kΩ pull-up

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

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Freescale Semiconductor 157

DI1_D0_CS U21 NVCC_IPU2 GPIO Output High

DI1_D1_CS AB23 NVCC_IPU2 GPIO Output High

DI1_DISP_CLK J18 NVCC_IPU6 GPIO Output Low

DI1_PIN11 Y22 NVCC_IPU2 GPIO Output High

DI1_PIN12 AA22 NVCC_IPU2 GPIO Output High

DI1_PIN13 T20 NVCC_IPU2 GPIO Output High

DI1_PIN15 H20 NVCC_IPU6 GPIO Output High

DI1_PIN2 G23 NVCC_IPU6 GPIO Output High

DI1_PIN3 G22 NVCC_IPU6 GPIO Output High

DI2_DISP_CLK J21 NVCC_IPU7 GPIO Output High

DI2_PIN2 J20 NVCC_IPU7 GPIO Output High

DI2_PIN3 K18 NVCC_IPU7 GPIO Output High

DI2_PIN4 H23 NVCC_IPU7 GPIO Input Keeper

DISP1_DAT0 N20 NVCC_HS6 HSGPIO Input Keeper

DISP1_DAT1 N21 NVCC_HS6 HSGPIO Input Keeper

DISP1_DAT103D22 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT113D23 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT123E21 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT133F20 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT143E22 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT153G19 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT163E23 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT173F21 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT183G20 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT193H18 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT2 U22 NVCC_HS6 HSGPIO Input Keeper

DISP1_DAT203F23 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT213H19 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT223F22 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT233G21 NVCC_IPU5 GPIO Input Keeper

DISP1_DAT3 U23 NVCC_HS6 HSGPIO Input Keeper

DISP1_DAT4 T22 NVCC_HS6 HSGPIO Input Keeper

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

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Package Information and Contact Assignments

DISP1_DAT5 T23 NVCC_HS6 HSGPIO Input Keeper

DISP1_DAT63C22 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT73C23 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT83D21 NVCC_IPU4 GPIO Input Keeper

DISP1_DAT93E20 NVCC_IPU4 GPIO Input Keeper

DISP2_DAT0 R21 NVCC_IPU8 GPIO Input Keeper

DISP2_DAT1 M19 NVCC_IPU8 GPIO Input Keeper

DISP2_DAT10 W22 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT11 R19 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT12 Y23 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT13 T19 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT14 AA23 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT15 T21 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT2 P20 NVCC_HS4_2 HSGPIO Input Keeper

DISP2_DAT3 P21 NVCC_HS4_2 HSGPIO Input Keeper

DISP2_DAT4 V22 NVCC_HS4_2 HSGPIO Input Keeper

DISP2_DAT5 V23 NVCC_HS4_2 HSGPIO Input Keeper

DISP2_DAT6 N19 NVCC_IPU8 GPIO Input Keeper

DISP2_DAT7 W23 NVCC_IPU8 GPIO Input Keeper

DISP2_DAT8 P19 NVCC_IPU9 GPIO Input Keeper

DISP2_DAT9 R20 NVCC_IPU9 GPIO Input Keeper

DISPB2_SER_CLK AC22 NVCC_IPU2 GPIO Output High

DISPB2_SER_DIN U19 NVCC_IPU2 GPIO Input 100 kΩ pull-up

DISPB2_SER_DIO V21 NVCC_IPU2 GPIO Input 100 kΩ pull-up

DISPB2_SER_RS W21 NVCC_IPU2 GPIO Output High

DN K22 VDDA33 Analog Output –

DP K23 VDDA33 Analog Output –

DRAM_A0 AB1 NVCC_EMI_DRAM DDR2 Output High

DRAM_A1 AA2 NVCC_EMI_DRAM DDR2 Output High

DRAM_A10 V2 NVCC_EMI_DRAM DDR2 Output High

DRAM_A11 U4 NVCC_EMI_DRAM DDR2 Output High

DRAM_A12 U2 NVCC_EMI_DRAM DDR2 Output High

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 159

DRAM_A13 U1 NVCC_EMI_DRAM DDR2 Output High

DRAM_A14 T2 NVCC_EMI_DRAM DDR2 Output High

DRAM_A2 AA3 NVCC_EMI_DRAM DDR2 Output High

DRAM_A3 V5 NVCC_EMI_DRAM DDR2 Output High

DRAM_A4 W4 NVCC_EMI_DRAM DDR2 Output High

DRAM_A5 Y2 NVCC_EMI_DRAM DDR2 Output High

DRAM_A6 W3 NVCC_EMI_DRAM DDR2 Output High

DRAM_A7 Y1 NVCC_EMI_DRAM DDR2 Output High

DRAM_A8 W2 NVCC_EMI_DRAM DDR2 Output High

DRAM_A9 V3 NVCC_EMI_DRAM DDR2 Output High

DRAM_CAS V4 NVCC_EMI_DRAM DDR2 Output High

DRAM_CS0 Y4 NVCC_EMI_DRAM DDR2 Output High

DRAM_CS1 Y3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D0 T1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D1 R3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D10 M3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D11 M4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D12 M1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D13 M5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D14 L5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D15 L4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D16 L3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D17 L2 NVCC_EMI_DRAM DDR2 Output High

DRAM_D18 L1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D19 K1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D2 R2 NVCC_EMI_DRAM DDR2 Output High

DRAM_D20 K3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D21 K4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D22 J3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D23 J4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D24 K5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D25 H1 NVCC_EMI_DRAM DDR2 Output High

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

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160 Freescale Semiconductor

Package Information and Contact Assignments

DRAM_D26 H2 NVCC_EMI_DRAM DDR2 Output High

DRAM_D27 J5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D28 G1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D29 G2 NVCC_EMI_DRAM DDR2 Output High

DRAM_D3 R1 NVCC_EMI_DRAM DDR2 Output High

DRAM_D30 G3 NVCC_EMI_DRAM DDR2 Output High

DRAM_D31 G4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D4 R4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D5 P5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D6 P4 NVCC_EMI_DRAM DDR2 Output High

DRAM_D7 N5 NVCC_EMI_DRAM DDR2 Output High

DRAM_D8 N2 NVCC_EMI_DRAM DDR2 Output High

DRAM_D9 N1 NVCC_EMI_DRAM DDR2 Output High

DRAM_DQM0 P3 NVCC_EMI_DRAM DDR2 Output High

DRAM_DQM1 M2 NVCC_EMI_DRAM DDR2 Output High

DRAM_DQM2 K2 NVCC_EMI_DRAM DDR2 Output High

DRAM_DQM3 H5 NVCC_EMI_DRAM DDR2 Output High

DRAM_RAS W1 NVCC_EMI_DRAM DDR2 Output High

DRAM_SDCKE0 AA1 NVCC_EMI_DRAM DDR2 Output High

DRAM_SDCKE1 W5 NVCC_EMI_DRAM DDR2 Output High

DRAM_SDCLK T3 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDCLK_B T4 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS0 P2 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS0_B P1 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS1 N4 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS1_B N3 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS2 J1 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS2_B J2 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS3 H3 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDQS3_B H4 NVCC_EMI_DRAM DDR2CLK Output High

DRAM_SDWE U5 NVCC_EMI_DRAM DDR2 Output High

EIM_A163AA9 NVCC_EMI GPIO Input 100 kΩ pull-up

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 161

EIM_A173AB9 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A183AC8 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A193AA8 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A203AB8 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A213AC7 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A22 AB7 NVCC_EMI GPIO Output High

EIM_A233AC6 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A24 AC5 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A25 AB6 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A26 AC4 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_A27 AB5 NVCC_EMI GPIO Input Keeper

EIM_BCLK AA4 NVCC_EMI GPIO Input Keeper

EIM_CRE AB2 NVCC_EMI GPIO Output High

EIM_CS0 W6 NVCC_EMI GPIO Output High

EIM_CS1 Y6 NVCC_EMI GPIO Output High

EIM_CS2 Y7 NVCC_EMI GPIO Input Keeper

EIM_CS3 AC3 NVCC_EMI GPIO Input Keeper

EIM_CS4 AA6 NVCC_EMI GPIO Input Keeper

EIM_CS5 AA5 NVCC_EMI GPIO Input Keeper

EIM_D16 AC12 NVCC_EMI GPIO Input Keeper

EIM_D17 W10 NVCC_EMI GPIO Input Keeper

EIM_D18 AA11 NVCC_EMI GPIO Input Keeper

EIM_D19 Y10 NVCC_EMI GPIO Input Keeper

EIM_D20 AB11 NVCC_EMI GPIO Input Keeper

EIM_D21 W9 NVCC_EMI GPIO Input Keeper

EIM_D22 AC11 NVCC_EMI GPIO Input Keeper

EIM_D23 V8 NVCC_EMI GPIO Input Keeper

EIM_D24 AA10 NVCC_EMI GPIO Input Keeper

EIM_D25 Y9 NVCC_EMI GPIO Input Keeper

EIM_D26 AB10 NVCC_EMI GPIO Input Keeper

EIM_D27 W8 NVCC_EMI GPIO Input Keeper

EIM_D28 AC10 NVCC_EMI GPIO Input Keeper

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

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162 Freescale Semiconductor

Package Information and Contact Assignments

EIM_D29 Y8 NVCC_EMI GPIO Input Keeper

EIM_D30 AC9 NVCC_EMI GPIO Input Keeper

EIM_D31 W7 NVCC_EMI GPIO Input Keeper

EIM_DA0 AC15 NVCC_EMI GPIO Input Keeper

EIM_DA1 V13 NVCC_EMI GPIO Input Keeper

EIM_DA10 AC13 NVCC_EMI GPIO Input Keeper

EIM_DA11 V11 NVCC_EMI GPIO Input Keeper

EIM_DA12 AA12 NVCC_EMI GPIO Input Keeper

EIM_DA13 W11 NVCC_EMI GPIO Input Keeper

EIM_DA14 AB12 NVCC_EMI GPIO Input Keeper

EIM_DA15 Y11 NVCC_EMI GPIO Input Keeper

EIM_DA2 AA14 NVCC_EMI GPIO Input Keeper

EIM_DA3 AB14 NVCC_EMI GPIO Input Keeper

EIM_DA4 AC14 NVCC_EMI GPIO Input Keeper

EIM_DA5 Y13 NVCC_EMI GPIO Input Keeper

EIM_DA6 AA13 NVCC_EMI GPIO Input Keeper

EIM_DA7 W13 NVCC_EMI GPIO Input Keeper

EIM_DA8 AB13 NVCC_EMI GPIO Input Keeper

EIM_DA9 Y12 NVCC_EMI GPIO Input Keeper

EIM_DTACK Y5 NVCC_EMI GPIO Input 100 kΩ pull-up

EIM_EB0 V12 NVCC_EMI GPIO Output High

EIM_EB1 W12 NVCC_EMI GPIO Output High

EIM_EB2 V10 NVCC_EMI GPIO Input Keeper

EIM_EB3 V9 NVCC_EMI GPIO Input Keeper

EIM_LBA AC2 NVCC_EMI GPIO Output High

EIM_OE AA7 NVCC_EMI GPIO Output High

EIM_RW AB3 NVCC_EMI GPIO Output High

EIM_SDBA0 V1 NVCC_EMI_DRAM DDR2 Output High

EIM_SDBA1 U3 NVCC_EMI_DRAM DDR2 Output High

EIM_SDBA2 F1 NVCC_EMI_DRAM DDR2 Output High

EIM_SDODT0 F3 NVCC_EMI_DRAM DDR2 Output High

EIM_SDODT1 F2 NVCC_EMI_DRAM DDR2 Output High

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 163

EIM_WAIT AB4 NVCC_EMI GPIO Input 100 kΩ pull-up

EXTAL2AB20 NVCC_OSC Analog Input —

FASTR_ANA2W20 NVCC_PER3 — Input —

FASTR_DIG2Y20 NVCC_PER3 — Input —

GPANAIO2J23 NVCC_USBPHY Analog Output —

GPIO_NAND D5 NVCC_NANDF_A UHVIO Input 100 kΩ pull-up

GPIO1_0 B21 NVCC_PER5 GPIO Input Keeper

GPIO1_1 D20 NVCC_PER5 GPIO Input Keeper

GPIO1_2 A22 NVCC_PER5 GPIO Input Keeper

GPIO1_3 D18 NVCC_PER5 GPIO Input Keeper

GPIO1_4 B22 NVCC_PER5 GPIO Input Keeper

GPIO1_5 D19 NVCC_PER5 GPIO Input Keeper

GPIO1_6 C19 NVCC_PER5 GPIO Input Keeper

GPIO1_7 B23 NVCC_PER5 GPIO Input Keeper

GPIO1_8 C21 NVCC_PER5 GPIO Input Keeper

GPIO1_9 C20 NVCC_PER5 GPIO Input Keeper

I2C1_CLK W15 NVCC_I2C I2CIO Input 47 kΩ pull-up

I2C1_DAT AB16 NVCC_I2C I2CIO Input 47 kΩ pull-up

ID L19 NVCC_USBPHY Analog Input Pull-up

IOB2AC19 AHVDDRGB Analog Output —

IOB_BACK2AB19 — Analog Output —

IOG2AC18 AHVDDRGB Analog Output —

IOG_BACK2AB18 — Analog Output —

IOR2AC17 AHVDDRGB Analog Output —

IOR_BACK2AB17 — Analog Output —

JTAG_DE_B AB15 NVCC_PER14 GPIO Input/Open-drain

output

47 kΩ pull-up

JTAG_MOD V14 NVCC_PER14 GPIO Input 100 kΩ pull-up

JTAG_TCK V15 NVCC_PER14 GPIO Input 100 kΩ pull-down

JTAG_TDI Y14 NVCC_PER14 GPIO Input 47 kΩ pull-up

JTAG_TDO AA15 NVCC_PER14 GPIO 3-state output Keeper

JTAG_TMS AC16 NVCC_PER14 GPIO Input 47 kΩ pull-up

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

164 Freescale Semiconductor

Package Information and Contact Assignments

JTAG_TRSTB W14 NVCC_PER14 GPIO Input 47 kΩ pull-up

KEY_COL0 E15 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_COL1 A16 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_COL2 D15 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_COL34B17 NVCC_PER13 GPIO Output High

KEY_COL44F16 NVCC_PER13 GPIO Output Low

KEY_COL54C16 NVCC_PER13 GPIO Output Low

KEY_ROW0 D14 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_ROW1 B16 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_ROW2 F15 NVCC_PER13 GPIO Input 100 kΩ pull-up

KEY_ROW3 C15 NVCC_PER13 GPIO Input 100 kΩ pull-up

NANDF_ALE E3 NVCC_NANDF_A UHVIO Output High

NANDF_CLE F4 NVCC_NANDF_A UHVIO Output High

NANDF_CS0 C3 NVCC_NANDF_A UHVIO Output High

NANDF_CS1 C2 NVCC_NANDF_A UHVIO Output High

NANDF_CS2 E4 NVCC_NANDF_A UHVIO Output High

NANDF_CS3 B1 NVCC_NANDF_A UHVIO Output High

NANDF_CS4 B2 NVCC_NANDF_A UHVIO Output Low

NANDF_CS5 A2 NVCC_NANDF_A UHVIO Output Low

NANDF_CS6 E5 NVCC_NANDF_B UHVIO Output Low

NANDF_CS7 C4 NVCC_NANDF_B UHVIO Output Low

NANDF_D0 A7 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D1 E8 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D10 B5 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D11 D7 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D12 C5 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D13 A3 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D14 B4 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D15 D6 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D2 A6 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D3 D8 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D4 B7 NVCC_NANDF_C UHVIO Input Keeper

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 165

NANDF_D5 A5 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D6 B6 NVCC_NANDF_C UHVIO Input Keeper

NANDF_D7 C6 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D8 A4 NVCC_NANDF_B UHVIO Input Keeper

NANDF_D9 E7 NVCC_NANDF_B UHVIO Input Keeper

NANDF_RB0 D2 NVCC_NANDF_A UHVIO Input 100 kΩ pull-up

NANDF_RB1 D4 NVCC_NANDF_A UHVIO Input 100 kΩ pull-up

NANDF_RB2 D3 NVCC_NANDF_A UHVIO Input 100 kΩ pull-up

NANDF_RB3 C1 NVCC_NANDF_A UHVIO Input 100 kΩ pull-up

NANDF_RDY_INT B3 NVCC_NANDF_B UHVIO Input 100 kΩ pull-up

NANDF_RE_B E2 NVCC_NANDF_A UHVIO Output —

NANDF_WE_B E1 NVCC_NANDF_A UHVIO Output —

NANDF_WP_B D1 NVCC_NANDF_A UHVIO Output —

OWIRE_LINE E14 NVCC_PER12 GPIO Input 100 kΩ pull-up

PMIC_INT_REQ AA16 NVCC_SRTC_POW GPIO Input 100 kΩ pull-up

PMIC_ON_REQ W16 NVCC_SRTC_POW GPIO Input 100 kΩ pull-up

PMIC_RDY AA17 NVCC_SRTC_POW GPIO Input 100 kΩ pull-up

PMIC_STBY_REQ Y15 NVCC_SRTC_POW GPIO Input 100 kΩ pull-up

POR_B U20 NVCC_PER3 LVIO Input 100 kΩ pull-up

RESET_IN_B Y21 NVCC_PER3 LVIO Input 100 kΩ pull-up

SD1_CLK A17 NVCC_PER15 UHVIO Output —

SD1_CMD E16 NVCC_PER15 UHVIO Input 47 kΩ pull-up

SD1_DATA0 D16 NVCC_PER15 UHVIO Input 47 kΩ pull-up

SD1_DATA1 A18 NVCC_PER15 UHVIO Input 47 kΩ pull-up

SD1_DATA2 F17 NVCC_PER15 UHVIO Input 47 kΩ pull-up

SD1_DATA3 A19 NVCC_PER15 UHVIO Input 360 kΩ pull-down

SD2_CLK B18 NVCC_PER17 UHVIO Output —

SD2_CMD G17 NVCC_PER17 UHVIO Input 47 kΩ pull-up

SD2_DATA0 E17 NVCC_PER17 UHVIO Input 47 kΩ pull-up

SD2_DATA1 B19 NVCC_PER17 UHVIO Input 47 kΩ pull-up

SD2_DATA2 D17 NVCC_PER17 UHVIO Input 47 kΩ pull-up

SD2_DATA3 C17 NVCC_PER17 UHVIO Input 360 kΩ pull-down

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

166 Freescale Semiconductor

Package Information and Contact Assignments

STR A15 NVCC_PER12 — — —

TEST_MODE V20 NVCC_PER3 GPIO Input 100 kΩ pull-down

UART1_CTS B14 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART1_RTS D13 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART1_RXD E13 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART1_TXD A13 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART2_RXD A14 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART2_TXD C14 NVCC_PER12 GPIO Input 100 kΩ pull-up

UART3_RXD F14 NVCC_PER12 GPIO Input Keeper

UART3_TXD B15 NVCC_PER12 GPIO Input Keeper

USBH1_CLK D11 NVCC_PER11 GPIO Input Keeper

USBH1_DATA0 E12 NVCC_PER11 GPIO Input Keeper

USBH1_DATA1 A11 NVCC_PER11 GPIO Input Keeper

USBH1_DATA2 B12 NVCC_PER11 GPIO Input Keeper

USBH1_DATA3 C12 NVCC_PER11 GPIO Input Keeper

USBH1_DATA4 D12 NVCC_PER11 GPIO Input Keeper

USBH1_DATA5 A12 NVCC_PER11 GPIO Input Keeper

USBH1_DATA6 B13 NVCC_PER11 GPIO Input Keeper

USBH1_DATA7 C13 NVCC_PER11 GPIO Input Keeper

USBH1_DIR B11 NVCC_PER11 GPIO Input Keeper

USBH1_NXT C11 NVCC_PER11 GPIO Input Keeper

USBH1_STP E11 NVCC_PER11 GPIO Input Keeper

XTAL2AC20 NVCC_OSC Analog Output —

1The state immediately after reset and before ROM firmware or software has executed.

2See Table 3 on page 11 for more information.

3During power-on reset this port acts as input for fuse override signal. See Table 129 on page 167 for more information.

4During power-on reset this port acts as output for diagnostic signal. See Table 129 on page 167 for more information.

Table 128. 19 x 19 mm Signal Assignments, Power Rails, and I/O (continued)

Contact Name Contact

Assignment Power Rail I/O Buffer Type Direction after

Reset1

Configuraton

after Reset1

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 167

5.1.2.3 Fuse Override Considerations

Table 129 lists the contacts that can be overridden with fuse settings.

Table 129. Fuse Override Contacts

Contact Name Direction

After Reset

Configuration

After Reset Signal Configuration1 External Termination for Fuse Override

DISP1_DAT10 Input Keeper BT_SPARE_SIZE 4.7 kΩ pull-up or pull-down

DISP1_DAT11 Input Keeper BT_LPB_FREQ[2] 4.7 kΩ pull-up or pull-down

DISP1_DAT12 Input Keeper BT_MLC_SEL 4.7 kΩ pull-up or pull-down

DISP1_DAT13 Input Keeper BT_MEM_CTL[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT14 Input Keeper BT_MEM_CTL[1] 4.7 kΩ pull-up or pull-down

DISP1_DAT15 Input Keeper BT_BUS_WIDTH 4.7 kΩ pull-up or pull-down

DISP1_DAT16 Input Keeper BT_PAGE_SIZE[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT17 Input Keeper BT_PAGE_SIZE[1] 4.7 kΩ pull-up or pull-down

DISP1_DAT18 Input Keeper BT_WEIM_MUXED[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT19 Input Keeper BT_WEIM_MUXED[1] 4.7 kΩ pull-up or pull-down

DISP1_DAT20 Input Keeper BT_MEM_TYPE[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT21 Input Keeper BT_MEM_TYPE[1] 4.7 kΩ pull-up or pull-down

DISP1_DAT22 Input Keeper BT_LPB_FREQ[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT23 Input Keeper BT_LPB_FREQ[1] 4.7 kΩ pull-up or pull-down

DISP1_DAT6 Input Keeper BT_USB_SRC24.7 kΩ pull-up or pull-down

DISP1_DAT7 Input Keeper BT_EEPROM_CFG 4.7 kΩ pull-up or pull-down

DISP1_DAT8 Input Keeper BT_SRC[0] 4.7 kΩ pull-up or pull-down

DISP1_DAT9 Input Keeper BT_SRC[1] 4.7 kΩ pull-up or pull-down

EIM_A16 Input 100 kΩ pull-up OSC_FREQ_SEL[0] 4.7 kΩ pull-down or none for high level3

EIM_A17 Input 100 kΩ pull-up OSC_FREQ_SEL[1] 4.7 kΩ pull-down or none for high level2

EIM_A18 Input 100 kΩ pull-up BT_LPB[0] 4.7 kΩ pull-down or none for high level2

EIM_A19 Input 100 kΩ pull-up BT_LPB[1] 4.7 kΩ pull-down or none for high level2

EIM_A20 Input 100 kΩ pull-up BT_UART_SRC[0] 4.7 kΩ pull-down or none for high level2

EIM_A21 Input 100 kΩ pull-up BT_UART_SRC[1] 4.7 kΩ pull-down or none for high level2

KEY_COL3 Output High Output for diagnostic signal

INT_BOOT during

power-on reset

—

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

168 Freescale Semiconductor

Package Information and Contact Assignments

KEY_COL4 Output Low Output for diagnostic signal

ANY_PU_RST during

power-on reset

—

KEY_COL5 Output Low Output for diagnostic signal

JTAG_ACT during power-on

reset

—

1Signal Configuration as Fuse Override Input at Power Up. These are special I/O lines that control the boot up configuration

during product development. In production, the boot configuration is controlled by fuses.

2External USB PHY selection is not functional.

3Consider using an external 68 kΩ pull-up if system constraints indicate that the on-chip 100 kΩ pull-up is too weak.

Table 129. Fuse Override Contacts (continued)

Contact Name Direction

After Reset

Configuration

After Reset Signal Configuration1 External Termination for Fuse Override

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 169

5.2 19 x 19 mm, 0.8 Pitch Ball Map

Table 130 shows the 19 × 19 mm, 0.8 pitch ball map.

Table 130. 19 × 19 mm, 0.8 Pitch Ball Map

GND

NANDF_CS5

NANDF_D13

NANDF_D8

NANDF_D5

NANDF_D2

NANDF_D0

CSI2_D19

AUD3_BB_FS

CSPI1_SCLK

USBH1_DATA1

USBH1_DATA5

UART1_TXD

UART2_RXD

STR

KEY_COL1

SD1_CLK

SD1_DATA1

SD1_DATA3

CSI1_HSYNC

CSI1_D9

GPIO1_2

GND

NANDF_CS3

NANDF_CS4

NANDF_RDY_INT

NANDF_D14

NANDF_D10

NANDF_D6

NANDF_D4

CSI2_D12

AUD3_BB_RXD

CSPI1_SS1

USBH1_DIR

USBH1_DATA2

USBH1_DATA6

UART1_CTS

UART3_TXD

KEY_ROW1

KEY_COL3

SD2_CLK

SD2_DATA1

CSI1_MCLK

GPIO1_0

GPIO1_4

GPIO1_7

NANDF_RB3

NANDF_CS1

NANDF_CS0

NANDF_CS7

NANDF_D12

NANDF_D7

CSI2_D13

AUD3_BB_CK

CSPI1_RDY

CSPI1_MISO

USBH1_NXT

USBH1_DATA3

USBH1_DATA7

UART2_TXD

KEY_ROW3

KEY_COL5

SD2_DATA3

CSI2_HSYNC

GPIO1_6

GPIO1_9

GPIO1_8

DISP1_DAT6

DISP1_DAT7

NANDF_WP_B

NANDF_RB0

NANDF_RB2

NANDF_RB1

GPIO_NAND

NANDF_D15

NANDF_D11

NANDF_D3

CSI2_D18

CSPI1_MOSI

USBH1_CLK

USBH1_DATA4

UART1_RTS

KEY_ROW0

KEY_COL2

SD1_DATA0

SD2_DATA2

GPIO1_3

GPIO1_5

GPIO1_1

DISP1_DAT8

DISP1_DAT10

DISP1_DAT11

NANDF_WE_B

NANDF_RE_B

NANDF_ALE

NANDF_CS2

NANDF_CS6

NVCC_NANDF_A

NANDF_D9

NANDF_D1

AUD3_BB_TXD

CSPI1_SS0

USBH1_STP

USBH1_DATA0

UART1_RXD

OWIRE_LINE

KEY_COL0

SD1_CMD

SD2_DATA0

CSI1_D8

CSI2_PIXCLK

DISP1_DAT9

DISP1_DAT12

DISP1_DAT14

DISP1_DAT16

EIM_SDBA2

EIM_SDODT1

EIM_SDODT0

NANDF_CLE

NVCC_NANDF_A

VDDGP

SVDDGP

UART3_RXD

KEY_ROW2

KEY_COL4

SD1_DATA2

CSI1_PIXCLK

CSI2_VSYNC

DISP1_DAT13

DISP1_DAT17

DISP1_DAT22

DISP1_DAT20

DRAM_D28

DRAM_D29

DRAM_D30

DRAM_D31

GND

VDDGP

VDDA

NVCC_NANDF_B

NVCC_NANDF_C

NVCC_PER11

NVCC_PER12

NVCC_PER13

NVCC_PER17

NVCC_PER5

NVCC_IPU4

SD2_CMD

CSI1_VSYNC

DISP1_DAT15

DISP1_DAT18

DISP1_DAT23

DI1_PIN3

DI1_PIN2

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

170 Freescale Semiconductor

Package Information and Contact Assignments

DRAM_D25

DRAM_D26

DRAM_SDQS3

DRAM_SDQS3_B

DRAM_DQM3

NVCC_EMI_DRAM

VDDGP

VDDA

GND

NVCC_PER9

NVCC_PER10

VDDA

VCC

SVCC

NVCC_PER15

NVCC_PER8

NVCC_IPU5

DISP1_DAT19

DISP1_DAT21

DI1_PIN15

DI_GP1

DI_GP3

DI2_PIN4

DRAM_SDQS2

DRAM_SDQS2_B

DRAM_D22

DRAM_D23

DRAM_D27

NVCC_EMI_DRAM

VDDGP

GND

SGND

GND

VCC

NVCC_IPU6

DI1_DISP_CLK

DI_GP2

DI2_PIN2

DI2_DISP_CLK

DI_GP4

GPANAIO

DRAM_D19

DRAM_DQM2

DRAM_D20

DRAM_D21

DRAM_D24

NVCC_EMI_DRAM

VDDGP

GND

VCC

NVCC_IPU7

DI2_PIN3

RREFEXT

VBUS

VREG

DRAM_D18

DRAM_D17

DRAM_D16

DRAM_D15

DRAM_D14

NVCC_EMI_DRAM

VCC

GND

VCC

NGND_USBPHY

NVCC_USBPHY

VDDA33

CSI2_D14

CSI2_D15

CSI2_D16

CSI2_D17

DRAM_D12

DRAM_DQM1

DRAM_D10

DRAM_D11

DRAM_D13

NVCC_EMI_DRAM

VCC

VDDA

GND

NVCC_HS10

NVCC_HS6

NVCC_HS4_1

DISP2_DAT1

CSI1_D14

CSI1_D15

CSI1_D18

CSI1_D19

DRAM_D9

DRAM_D8

DRAM_SDQS1_B

DRAM_SDQS1

DRAM_D7

NVCC_EMI_DRAM

VCC

GND

VCC

NVCC_HS4_2

DISP2_DAT6

DISP1_DAT0

DISP1_DAT1

CSI1_D16

CSI1_D17

DRAM_SDQS0_B

DRAM_SDQS0

DRAM_DQM0

DRAM_D6

DRAM_D5

NVCC_EMI_DRAM

VCC

GND

VDDA

VCC

NVCC_IPU8

DISP2_DAT8

DISP2_DAT2

DISP2_DAT3

CSI1_D12

CSI1_D13

Table 130. 19 × 19 mm, 0.8 Pitch Ball Map (continued)

Package Information and Contact Assignments

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 171

DRAM_D3

DRAM_D2

DRAM_D1

DRAM_D4

VREF

NVCC_EMI_DRAM

VDD_FUSE

GND

VCC

NVCC_IPU9

DISP2_DAT11

DISP2_DAT9

DISP2_DAT0

CSI1_D10

CSI1_D11

DRAM_D0

DRAM_A14

DRAM_SDCLK

DRAM_SDCLK_B

GND

NVCC_EMI_DRAM

GND_DIG_PLL_A

VCC

VDDA

NVCC_I2C

NGND_TV_BACK

GND

VCC

NVCC_IPU2

DISP2_DAT13

DI1_PIN13

DISP2_DAT15

DISP1_DAT4

DISP1_DAT5

DRAM_A13

DRAM_A12

EIM_SDBA1

DRAM_A11

DRAM_SDWE

VDD_DIG_PLL_A

GND_ANA_PLL_A

NVCC_EMI

NVCC_PER14

NVCC_SRTC_POW

VREFOUT

NVCC_TV_BACK

GND_ANA_PLL_B

NVCC_PER3

DISPB2_SER_DIN

POR_B

DI1_D0_CS

DISP1_DAT2

DISP1_DAT3

EIM_SDBA0

DRAM_A10

DRAM_A9

DRAM_CAS

DRAM_A3

VDD_ANA_PLL_A

NVCC_EMI

EIM_D23

EIM_EB3

EIM_EB2

EIM_DA11

EIM_EB0

EIM_DA1

JTAG_MOD

JTAG_TCK

TVDAC_DHVDD

NGND_OSC

GND_DIG_PLL_B

CKIH1

TEST_MODE

DISPB2_SER_DIO

DISP2_DAT4

DISP2_DAT5

DRAM_RAS

DRAM_A8

DRAM_A6

DRAM_A4

DRAM_SDCKE1

EIM_CS0

EIM_D31

EIM_D27

EIM_D21

EIM_D17

EIM_DA13

EIM_EB1

EIM_DA7

JTAG_TRSTB

I2C1_CLK

PMIC_ON_REQ

NVCC_OSC

VDD_DIG_PLL_B

VDD_ANA_PLL_B

FASTR_ANA

DISPB2_SER_RS

DISP2_DAT10

DISP2_DAT7

DRAM_A7

DRAM_A5

DRAM_CS1

DRAM_CS0

EIM_DTACK

EIM_CS1

EIM_CS2

EIM_D29

EIM_D25

EIM_D19

EIM_DA15

EIM_DA9

EIM_DA5

JTAG_TDI

PMIC_STBY_REQ

CKIL

COMP

AHVDDRGB

AHVSSRGB

FASTR_DIG

RESET_IN_B

DI1_PIN11

DISP2_DAT12

DRAM_SDCKE0

DRAM_A1

DRAM_A2

EIM_BCLK

EIM_CS5

EIM_CS4

EIM_OE

EIM_A19

EIM_A16

EIM_D24

EIM_D18

EIM_DA12

EIM_DA6

EIM_DA2

JTAG_TDO

PMIC_INT_REQ

PMIC_RDY

AHVDDRGB

AHVSSRGB

CKIH2

CLK_SS

DI1_PIN12

DISP2_DAT14

Table 130. 19 × 19 mm, 0.8 Pitch Ball Map (continued)

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

172 Freescale Semiconductor

Package Information and Contact Assignments

DRAM_A0

EIM_CRE

EIM_RW

EIM_WAIT

EIM_A27

EIM_A25

EIM_A22

EIM_A20

EIM_A17

EIM_D26

EIM_D20

EIM_DA14

EIM_DA8

EIM_DA3

JTAG_DE_B

I2C1_DAT

IOR_BACK

IOG_BACK

IOB_BACK

EXTAL

BOOT_MODE0

BOOT_MODE1

DI1_D1_CS

GND

EIM_LBA

EIM_CS3

EIM_A26

EIM_A24

EIM_A23

EIM_A21

EIM_A18

EIM_D30

EIM_D28

EIM_D22

EIM_D16

EIM_DA10

EIM_DA4

EIM_DA0

JTAG_TMS

IOR

IOG

IOB

XTAL

GND

DISPB2_SER_CLK

GND

Table 130. 19 × 19 mm, 0.8 Pitch Ball Map (continued)

Revision History

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

Freescale Semiconductor 173

6 Revision History

Table 131 provides a revision history for this data sheet.

2Table 131. i.MX51 Data Sheet Document Revision History

Rev.

Number Date Substantive Change(s)

Rev. 6 10/2012 • In Table 25, "I/O Leakage Current," on page 29, updated supply rail names for SD1 and SD2 to

NVCC_PER15 and NVCC_PER17, respectively.

• Updated Section 4.6.7.3, “General WEIM Timing-Synchronous Mode.”

• Updated Section 4.6.7.4, “Examples of WEIM Synchronous Accesses.”

• Updated Section 4.6.7.5, “General WEIM Timing-Asynchronous Mode.”

Rev. 5 03/2012 • In Table 4, "JTAG Controller Interface Summary," on page 13, changed On-Chip Termination column

value for JTAG_MOD from “100 kΩ pull-down” to “100 kΩ pull-up.”

•In Section 3.7, “USB-OTG IOMUX Pin Configuration,” removed the third sentence from the first

paragraph and added a note after Ta bl e 9 .

•In Section 4.3.4, “Ultra-High Voltage I/O (UHVIO) DC Parameters,” added clarification about UHVIO I/O

cell HVE bit functionality after Table 2 1.

•In Section 4.6.9, “DDR2 SDRAM Specific Parameters:”

—Updated Table 58, "DDR2 SDRAM Timing Parameter Table," on page 67

—Added a note after Ta b le 5 8

—Updated Figure 36, "DDR2 SDRAM Write Cycle Timing Diagram," on page 69

—Updated Table 60, "DDR2 SDRAM Write Cycle Parameter Table," on page 69

—Added a note after Ta b le 6 0

—Updated Figure 37, "DDR2 SDRAM DQ versus DQS and SDCLK Read Cycle Timing Diagram," on

page 71

—Updated Table 63, "DDR2 SDRAM Read Cycle Parameter Table," on page 71

—Added a note after Ta b le 6 3

•In Section 4.7.8.2, “Electrical Characteristics,” changed signal name in the second sentence of the first

paragraph from “SENSB_MCLK” to “SENSB_PIX_CLK.”

•In Table 128, "19 x 19 mm Signal Assignments, Power Rails, and I/O," on page 155, changed

Configuraton after Reset column value for contacts, DI1_D0_CS, DI1_D1_CS, DI1_PIN11, and

DI1_PIN12, from “Low” to “High.”

•In Table 128, "19 x 19 mm Signal Assignments, Power Rails, and I/O," on page 155, changed

Configuraton after Reset column value for contact, JTAG_MOD, from “100 kΩ pull-down” to “100 kΩ

pull-up.”

•In Table 128, "19 x 19 mm Signal Assignments, Power Rails, and I/O," on page 155, changed Power Rail

column value for contacts, UART1_CTS, UART1_RTS, UART1_RXD, UART1_TXD, UART2_RXD,

UART2_TXD, UART3_RXD, and UART3_TXD, from “NVVCC_PER12” to “NVCC_PER12.”

•In Table 129, "Fuse Override Contacts," on page 167:

—Added a footnote for contact, DISP1_DAT6

—Removed information about contact, EIM_A23, because the signal configuration it corresponds to,

BT_HPN_EN, is not in use.

• Corrected cross-references throughout the document.

Rev. 4 08/2010 • Removed table footnote in Table 47, "CAMP Electrical Parameters (CKIH1, CKIH2)," on page 46.

• Updated Table 52, "WEIM Interface Pinout in Various Configurations," on page 53.

i.MX51A Automotive and Infotainment Applications Processors, Rev. 6

174 Freescale Semiconductor

Revision History

Rev. 3 06/2010 • Updated Max column of Table 15, "Fuse Supply Current," on page 19. Deleted eFuse Read Current row

from the same table.

• Updated Symbol, Test Conditions, and Max columns of Table 18, "GPIO/HSGPIO DC Electrical

Characteristics," on page 23.

• Updated Max and Unit columns of Table 19, "DDR2 I/O DC Electrical Parameters," on page 24.

• Updated Test Conditions, Max, and Unit columns of Table 20, "LVIO DC Electrical Characteristics," on

page 24

• Updated Symbol, Test Conditions, Max, and Unit columns of Table 21, "UHVIO DC Electrical

Characteristics," on page 25.

• Updated Max and Unit columns of Table 22, "I2C Standard/Fast/High-Speed Mode Electrical

Parameters for Low/Medium Drive Strength," on page 27.

• Added a new table Table 25, "I/O Leakage Current," on page 29.

Rev. 2 05/2010 • Changed the VREFOUT column in Table 3, "Special Signal Considerations," on page 11.

• Added Section 3, “IOMUX Configuration for Boot Media”.

• Updated Figure 2, "Power-Up Sequence," on page 22.

• Added a note in Section 4.2.1, “Power-Up Sequence”.

• Updated Section 4.2.1, “Power-Up Sequence.”

• Changed the Input current (47 kΩ Pull-up) column in Table 21, "UHVIO DC Electrical Characteristics,"

on page 25 to Input current (75 kO Pull-up).

• Added new table for parameters for DDR2 Pad output buffer Impedance. See Table 27, "DDR2 I/O

Output Buffer Impedance HVE = 0," on page 30.

• Added new section under Section 4.5, “I/O AC Parameters”. See Section 4.5.4, “AC Electrical

Characteristics for DDR2”.

• Updated Table 47, "CAMP Electrical Parameters (CKIH1, CKIH2)," on page 46. In the VIH (for square

wave input) parameter, the minimum frequency was changed to NVCC_PER3 - 0.25V and the maximum

frequency was changed to NVCC_PER3.

• Added a note in Section 4.6.6, “NAND Flash Controller (NFC) Parameters” after Ta bl e 49 .

• Updated Asymmetric Mode Min, Symmetric Mode Min, and Max columns of Ta b l e 5 0 .

• Removed Conditions parameters of the Full scale output voltage row in Ta b l e 8 2 .

• Updated Section 4.7.11, “P-ATA Timing Parameters”. Replaced ATA/ATAPI-6 specification with

ATA/ATAPI-5 specification.

•In Table 102, "SSI Transmitter Timing with Internal Clock," on page 133, under the Synchronous Internal

Clock Operation sections for the ID SS42, minimum frequency was changed from 10.0 to 30.

•In Table 103, "SSI Receiver Timing with Internal Clock," on page 134, under the Internal Clock

Operation section for ID SS20, minimum frequency was changed from 10.0 to 30.

•In Table 104, "SSI Transmitter Timing with External Clock," on page 136, under the External Clock

Operation section for ID SS38, maximum frequency was changed from 15.0 to 30.

• Added a new section Section 4.7.16.1, “UART Electrical”, under Section 4.7.16, “UART”.

•In Table 118, "USB Port Timing Specification in VP_VM Bi-directional Mode," on page 146, for IDs SS28

and SS29, direction was changed from out to in.

•In Table 120, "USB Timing Specification in VP_VM Unidirectional Mode," on page 148, for IDs US40 and

US41, direction was changed from out to in and the reference signal was changed to USB_VM1 and

USB_VP1 respectively.

•I

n Table 122, "USB Timing Specification for ULPI Parallel Mode," on page 149, added an extra row for

ID17.

• Updated Signal and Direction columns in Table 120, "USB Timing Specification in VP_VM Unidirectional

Mode," on page 148.

• Updated Signal names in Table 118, "USB Port Timing Specification in VP_VM Bi-directional Mode," on

page 146.

Rev. 1 10/2009 Initial public release.

Table 131. i.MX51 Data Sheet Document Revision History (continued)

Rev.

Number Date Substantive Change(s)

Document Number: IMX51AEC

Rev. 6

09/2012

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