TC74VCX573FT/FK
2006-06-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VCX573FT, TC74VCX573FK
Low-Voltage Octal D-Type Latch with 3.6 V Tolerant Inputs and Outputs
The TC74VCX573 is a high performance CMOS octal D-type
latch which is guaranteed to operate from 1.2-V to 3.6-V.
Designed for use in 1.5V, 1.8 V, 2.5 V or 3.3 V systems, it
achieves high speed operation while maintaining the CMOS low
power dissipation.
It is also designed with over voltage tolerant inputs and
outputs up to 3.6 V.
This 8 bit D-type latch is controlled by a latch enable input
(LE) and an output enable input (OE).
When the OE input is high, the eight outputs are in a high
impedance state.
All inputs are equipped with protection circuits against static
discharge.
Features
Low voltage operation: VCC = 1.2 ~3.6 V
High speed operation: tpd = 4.2 ns (max) (VCC = 3.0~3.6 V)
t
pd = 4.7 ns (max) (VCC = 2.3~2.7 V)
t
pd = 9.4 ns (max) (VCC = 1.65~1.95 V)
t
pd = 18.8 ns (max) (VCC = 1.4~1.6 V)
t
pd = 47.0 ns (max) (VCC = 1.2 V)
3.6 V tolerant inputs and outputs.
Output current: IOH/IOL = ±24 mA (min) (VCC = 3.0 V)
I
OH/IOL = ±18 mA (min) (VCC = 2.3 V)
I
OH/IOL = ±6 mA (min) (VCC = 1.65 V)
I
OH/IOL = ±2 mA (min) (VCC = 1.4 V)
Latch-up performance: ±300 mA
ESD performance: Machine model > ±200
Human body model > ±2000 V
Package: TSSOP (thin shrink small outline package)
Power down protection is provided on all inputs and outputs.
TC74VCX573FT
TC74VCX573FK
Weight
TSSOP20-P-0044-0.65A : 0.08 g (typ.)
VSSOP20-P-0030-0.50 : 0.03 g (typ.)
TC74VCX573FT/FK
2006-06-01
2
Pin Assignm en t (top view) IEC Logic Level
Trut h Table
Inputs
OE LE D
Outputs
H X X Z
L L X Qn
L H L L
L H H H
X: Don’t care
Z: High impedance
Qn: Q outputs are latched at the time when the LE inputs is taken to a low logic level.
System Diagram
VCC
20
Q0
Q1
Q2
Q3
Q4
19
18
17
16
15
14
OE 1
2
3
4
5
6
7
D0
D1
D2
D3
D4
D5 Q5
8
9
10
D6
D7
GND
13
12
11
Q6
Q7
LE
(1)
(11)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(19)
(18)
(17)
(16)
(15)
(14)
(13)
(12)
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
EN
1D
C1
OE
LE
D0
D1
D2
D3
D4
D5
D6
D7
LE
OE
Q1
1
11
2
19
Q2
3
18
Q3
4
17
Q4
5
16
Q5
6
15
Q6
7
14
Q7
8
13
L Q
D
LQ
D
LQ
D
LQ
D
LQ
D
L Q
D
L Q
D
D1 D2 D3 D4 D5 D6 D7
9
12
LQ
D
Q0
D0
TC74VCX573FT/FK
2006-06-01
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Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Power supply voltage VCC 0.5~4.6 V
DC input voltage VIN 0.5~4.6 V
0.5~4.6 (Note 2)
DC output voltage VOUT 0.5~VCC + 0.5 (Note 3)
V
Input diode current IIK 50 mA
Output diode current IOK ±50 (Note 4) mA
DC output current IOUT ±50 mA
Power dissipation PD 180 mW
DC VCC/ground current ICC/IGND ±100 mA
Storage temperature Tstg 65~150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Note 2: Off-state
Note 3: High or low state. IOUT absolute maximum rating must be observed.
Note 4: VOUT < GND, VOUT > VCC
Re c ommen de d O p e rating Ran ge (No te 1)
Characteristics Symbol Rating Unit
Supply voltage VCC 1.2~3.6 V
Input voltage VIN 0.3~3.6 V
0~3.6 (Note 2)
Output voltage VOUT 0~VCC (Note 3)
V
±24 (Note 4)
±18 (Note 5)
±6 (Note 6)
Output current IOH/IOL
±2 (Note 7)
mA
Operating temperature Topr 40~85 °C
Input rise and fall time dt/dv 0~10 (Note 8) ns/V
Note 1: The recommended operating conditions are required to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 2: Off-state
Note 3: High or low state
Note 4: VCC = 3.0~3.6 V
Note 5: VCC = 2.3~2.7 V
Note 6: VCC = 1.65~1.95 V
Note 7: VCC = 1.4~1.6 V
Note 8: VIN = 0.8~2.0 V, VCC = 3.0 V
TC74VCX573FT/FK
2006-06-01
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Electrical Characteristics
DC Characteristics (Ta = 40~85°C, 2.7 V < VCC
<
=
3.6 V)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
High level VIH 2.7~3.6 2.0
Input voltage
Low level VIL 2.7~3.6 0.8
V
IOH = 100 µA 2.7~3.6
VCC
0.2
IOH = 12 mA 2.7 2.2
IOH = 18 mA 3.0 2.4
High level VOH VIN = VIH or VIL
IOH = 24 mA 3.0 2.2
IOL = 100 µA 2.7~3.6 0.2
IOL = 12 mA 2.7 0.4
IOL = 18 mA 3.0 0.4
Output voltage
Low level VOL V
IN = VIH or VIL
IOL = 24 mA 3.0 0.55
V
Input leakage current IIN VIN = 0~3.6 V 2.7~3.6 ±5.0 µA
3-state output off-state current IOZ VIN = VIH or VIL
VOUT = 0~3.6 V
2.7~3.6 ±10.0 µA
Power off leakage current IOFF V
IN, VOUT = 0~3.6 V 0 10.0 µA
VIN = VCC or GND 2.7~3.6 20.0
ICC
VCC
<
=
(VIN, VOUT)
<
=
3.6 V 2.7~3.6 ±20.0
Quiescent supply current
ICC V
IH = VCC 0.6 V (per input) 2.7~3.6 750
µA
DC Characteristics (Ta = 40~85°C, 2.3 V
<
=
VCC
<
=
2.7 V)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
High level VIH 2.3~2.7 1.6
Input voltage
Low level VIL 2.3~2.7 0.7
V
IOH = 100 µA 2.3~2.7
VCC
0.2
IOH = 6 mA 2.3 2.0
IOH = 12 mA 2.3 1.8
High level VOH VIN = VIH or VIL
IOH = 18 mA 2.3 1.7
IOL = 100 µA 2.3~2.7 0.2
IOL = 12 mA 2.3 0.4
Output voltage
Low level VOL V
IN = VIH or VIL
IOL = 18 mA 2.3 0.6
V
Input leakage current IIN VIN = 0~3.6 V 2.3~2.7 ±5.0 µA
3-state output off-state current IOZ VIN = VIH or VIL
VOUT = 0~3.6 V
2.3~2.7 ±10.0 µA
Power off leakage current IOFF V
IN, VOUT = 0~3.6 V 0 10.0 µA
VIN = VCC or GND 2.3~2.7 20.0
Quiescent supply current ICC
VCC
<
=
(VIN, VOUT)
<
=
3.6 V 2.3~2.7 ±20.0
µA
TC74VCX573FT/FK
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DC Characteristics (Ta = 40~85°C, 1.65 V
<
=
V
CC< 2.3 V)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
High level VIH 1.65~2.3
0.65 ×
VCC
Input voltage
Low level VIL 1.65~2.3 0.2 ×
VCC
V
IOH = 100 µA 1.65~2.3
VCC
0.2
High level VOH VIN = VIH or VIL
IOH = 6 mA 1.65 1.25
IOL = 100 µA 1.65~2.3 0.2
Output voltage
Low level VOL V
IN = VIH or VIL
IOL = 6 mA 1.65 0.3
V
Input leakage current IIN VIN = 0~3.6 V 1.65~2.3 ±5.0 µA
3-state output off-state current IOZ VIN = VIH or VIL
VOUT = 0~3.6 V
1.65~2.3 ±10.0 µA
Power off leakage current IOFF V
IN, VOUT = 0~3.6 V 0 10.0 µA
VIN = VCC or GND 1.65~2.3 20.0
Quiescent supply current ICC
VCC
<
=
(VIN, VOUT)
<
=
3.6 V 1.65~2.3 ±20.0
µA
DC Characteristics (Ta = 40~85°C, 1.4 V
<
=
VCC< 1.65 V)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
High level VIH 1.4~1.65
0.65 ×
VCC
Input voltage
Low level VIL 1.4~1.65 0.05 ×
VCC
V
IOH = 100 µA 1.4~1.65
VCC
0.2
High level VOH VIN = VIH or VIL
IOH = 2 mA 1.4 1.05
IOL = 100 µA 1.4~1.65 0.05
Output voltage
Low level VOL V
IN = VIH or VIL
IOL = 2 mA 1.4 0.35
V
Input leakage current IIN VIN = 0~3.6 V 1.4~1.65 ±5.0 µA
3-state output off-state current IOZ VIN = VIH or VIL
VOUT = 0~3.6 V
1.4~1.65 ±10.0 µA
Power off leakage current IOFF V
IN, VOUT = 0~3.6 V 0 10.0 µA
VIN = VCC or GND 1.4~1.65 20.0
Quiescent supply current ICC
VCC
<
=
(VIN, VOUT)
<
=
3.6 V 1.4~1.65 ±20.0
µA
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DC Characteristics (Ta = 40~85°C, 1.2 V
<
=
VCC < 1.4 V)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
High level VIH 1.2~1.4
0.8 ×
VCC
Input voltage
Low level VIL 1.2~1.4 0.05 ×
VCC
V
High level VOH VIN = VIH or VIL I
OH = 100 µA 1.2
VCC
0.1
Output voltage
Low level VOL V
IN = VIH or VIL I
OL = 100 µA 1.2 0.05
V
Input leakage current IIN VIN = 0~3.6 V 1.2 ±5.0 µA
3-state output off-state current IOZ
VIN = VIH or VIL
VOUT = 0~3.6 V
1.2 ±10.0 µA
Power off leakage current IOFF V
IN, VOUT = 0~3.6 V 0 10.0 µA
VIN = VCC or GND 1.2 20.0
Quiescent supply current ICC
VCC
<
=
(VIN, VOUT)
<
=
3.6 V 1.2 ±20.0
µA
TC74VCX573FT/FK
2006-06-01
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AC Characteristics (Ta = 40~85°C, Input: tr = tf = 2.0 ns) (Note 1)
Characteristics Symbol Test Condition
VCC (V)
Min Max Unit
1.2 1.5 47.0
CL = 15 pF, RL = 2 k
1.5 ± 0.1 1.0 18.8
1.8 ± 0.15 1.5 9.4
2.5 ± 0.2 0.8 4.7
Propagation delay time (D-Q) tpLH
tpHL
Figure 1, Figure 2
CL = 30 pF, RL = 500
3.3 ± 0.3 0.6 4.2
ns
1.2 1.5 49.0
CL = 15 pF, RL = 2 k
1.5 ± 0.1 1.0 19.6
1.8 ± 0.15 1.5 9.8
2.5 ± 0.2 0.8 4.9
Propagation delay time (LE-Q)
tpLH
tpHL
Figure 1, Figure 2
CL = 30 pF, RL = 500
3.3 ± 0.3 0.6 4.2
ns
1.2 1.5 49.0
CL = 15 pF, RL = 2 k
1.5 ± 0.1 1.0 19.6
1.8 ± 0.15 1.5 9.8
2.5 ± 0.2 0.8 5.5
3-state output enable time tpZL
tpZH
Figure 1, Figure 3
CL = 30 pF, RL = 500
3.3 ± 0.3 0.6 4.5
ns
1.2 1.5 32.5
CL = 15 pF, RL = 2 k
1.5 ± 0.1 1.0 13.0
1.8 ± 0.15 1.5 6.5
2.5 ± 0.2 0.8 3.6
3-state output disable time tpLZ
tpHZ
Figure 1, Figure 3
CL = 30 pF, RL = 500
3.3 ± 0.3 0.6 3.3
ns
1.2 24
CL = 15 pF, RL = 2 k
1.5 ± 0.1 8.0
1.8 ± 0.15 4.0
2.5 ± 0.2 1.5
Minimum pulse width tw (H) Figure 1, Figure 2
CL = 30 pF, RL = 500
3.3 ± 0.3 1.5
ns
1.2 20
CL = 15 pF, RL = 2 k
1.5 ± 0.1 7.5
1.8 ± 0.15 2.5
2.5 ± 0.2 1.5
Minimum set-up time ts Figure 1, Figure 2
CL = 30 pF, RL = 500
3.3 ± 0.3 1.5
ns
1.2 8.0
CL = 15 pF, RL = 2 k
1.5 ± 0.1 3.0
1.8 ± 0.15 1.0
2.5 ± 0.2 1.0
Minimum hold time th Figure 1, Figure 2
CL = 30 pF, RL = 500
3.3 ± 0.3 1.0
ns
1.2 1.5
CL = 15 pF, RL = 2 k
1.5 ± 0.1 1.5
1.8 ± 0.15 0.5
2.5 ± 0.2 0.5
Output to output skew tosLH
tosHL
(Note 2)
CL = 30 pF, RL = 500
3.3 ± 0.3 0.5
ns
Note 1: For CL = 50 pF, add approximately 300 ps to the AC maximum specification.
Note 2: This parameter is guaranteed by design. (tosLH = |tpLHm tpLHn|, tosHL = |tpHLm tpHLn|)
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D ynam ic Switc h in g Char act e ristics (Ta = 25°C, Input: tr = tf = 2.0 ns, CL = 30 pF)
Characteristics Symbol Test Condition
VCC (V)
Typ. Unit
VIH = 1.8 V, VIL = 0 V (Note) 1.8 0.25
VIH = 2.5 V, VIL = 0 V (Note) 2.5 0.6
Quiet output maximum dynamic VOL VOLP
VIH = 3.3 V, VIL = 0 V (Note) 3.3 0.8
V
VIH = 1.8 V, VIL = 0 V (Note) 1.8 0.25
VIH = 2.5 V, VIL = 0 V (Note) 2.5 0.6
Quiet output minimum dynamic VOL V
OLV
VIH = 3.3 V, VIL = 0 V (Note) 3.3 0.8
V
VIH = 1.8 V, VIL = 0 V (Note) 1.8 1.5
VIH = 2.5 V, VIL = 0 V (Note) 2.5 1.9
Quiet output minimum dynamic VOH V
OHV
VIH = 3.3 V, VIL = 0 V (Note) 3.3 2.2
V
Note: This parameter is guaranteed by design.
Ca pacit ive Charact e ri sti cs (Ta = 25°C)
Characteristics Symbol Test Condition
VCC (V)
Typ. Unit
Input capacitance CIN 1.8, 2.5, 3.3 6 pF
Output capacitance CO 1.8, 2.5, 3.3 7 pF
Power dissipation capacitance CPD f
IN = 10 MHz (Note) 1.8, 2.5, 3.3 20 pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr) = CPDVCCfIN + ICC/8 (per bit)
TC74VCX573FT/FK
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AC Test Circuit
AC Waveform
Figure 2 tpLH, tpHL, tw, ts, th
90%
10%
Input
(LE)
VIH
tr 2.0 ns
Input
(D)
th (L)
V
M
GND
V
M
tf 2.0 ns
V
M
90%
10%
tpHL
Output
(Q)
ts (L)
tw (H)
VIH
GND
tpHL
V
M
V
M
tpLH
VOH
VOL
tpLH
th (H) ts (H)
V
M
tr 2.0 ns tf 2.0 ns
6.0 V or VCC × 2
Open
GND
Switch
Out
p
ut Measure
RL RL
CL
Figure 1
Parameter Switch
tpLH, tpHL Open
tpLZ, tpZL
6.0 V @VCC = 3.3 ± 0.3 V
VCC × 2 @VCC = 2.5 ± 0.2 V
@VCC = 1.8 ± 0.15 V
@VCC = 1.5 ± 0.1 V
@VCC = 1.2 V
tpHZ, tpZH GND
VCC
Symbol 3.3 ± 0.3 V
2.5 ± 0.2 V
1.8 ± 0.15 V
1.5 ± 0.1 V
1.2 V
RL 500 2k
CL 30pF 15pF
TC74VCX573FT/FK
2006-06-01
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90%
10%
VOL
3.0 V or VCC
GND
VIH
VM
tpHZ tpZH
tr 2.0 ns tf 2.0 ns
V
M
GND
VOH
Outputs
enabled
VM
tpLZ tpZL
VY
Outputs
disabled
Outputs
enabled
Output Enable
Control ( OE )
Output (Q)
Low to Off to Low
Output (Q)
High to Off to High
VX
Figure 3 tpLZ, tpHZ, tpZL, tpZH
VCC
Symbol
3.3 ± 0.3 V 2.5 ± 0.2 V 1.8 ± 0.15 V 1.5 ± 0.1 V 1.2 V
VIH 2.7 V VCC V
CC V
CC V
CC
VM 1.5 V VCC/2 VCC/2 VCC/2 VCC/2
VX V
OL + 0.3 V VOL + 0.15 V VOL + 0.15 V VOL + 0.1 V VOL + 0.1 V
VY V
OH 0.3 V VOH 0.15 V VOH 0.15 V VOH 0.1 V VOH 0.1 V
TC74VCX573FT/FK
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Package Dimensions
Weight: 0.08 g (typ.)
TC74VCX573FT/FK
2006-06-01
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Package Dimensions
Weight: 0.03 g (typ.)
TC74VCX573FT/FK
2006-06-01
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Note: Lead (Pb)-Free Packages
TSSOP20-P-0044-0.65A VSSOP20-P-0030-0.50
RESTRICTION S ON PRODUCT USE 060116EBA
The information contained herein is subject to change without notice. 021023_D
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E