Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
MDP2N60
MDF2N60
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
±30
Continuous Drain Current
TC=25oC
ID
2.0
2.0*
TC=100oC
1.2
1.2*
Pulsed Drain Current(1)
IDM
8.0
8.0*
Power Dissipation
TC=25oC
PD
53.9
22.7
Derate above 25 oC
0.43
0.18
Repetitive Avalanche Energy(1)
EAR
5.39
Peak Diode Recovery dv/dt(3)
dv/dt
4.5
Single Pulse Avalanche Energy(4)
EAS
115
Junction and Storage Temperature Range
TJ, Tstg
-55~150
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Symbol
MDP2N60
MDF2N60
Unit
Thermal Resistance, Junction-to-Ambient(1)
RθJA
62.5
62.5
oC/W
Thermal Resistance, Junction-to-Case(1)
RθJC
2.32
5.5
MDP2N60/MDF2N60
N-Channel MOSFET 600V, 2.0A, 4.5Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 2.0A @ VGS = 10V
RDS(ON) ≤ 4.5Ω @ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G
S
TO-220F
TO-220
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP2N60TH
-55~150oC
TO-220
Tube
Halogen Free
MDF2N60TH
-55~150oC
TO-220F
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
600
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
-
5.0
Drain Cut-Off Current
IDSS
VDS = 600V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 1.0A
3.6
4.5
Ω
Forward Transconductance
gfs
VDS = 30V, ID = 1.0A
-
0.5
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 480V, ID = 2.0A, VGS = 10V(3)
-
6.7
nC
Gate-Source Charge
Qgs
-
2.2
Gate-Drain Charge
Qgd
-
2.5
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
275
360
pF
Reverse Transfer Capacitance
Crss
-
1.4
2
Output Capacitance
Coss
-
32
40
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 300V, ID = 2.0A,
RG = 25Ω(3)
-
10.6
ns
Rise Time
tr
-
29.6
Turn-Off Delay Time
td(off)
-
40.4
Fall Time
tf
-
38.4
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
-
-
2.0
A
Source-Drain Diode Forward
Voltage
VSD
IS = 2.0A, VGS = 0V
-
1.4
V
Body Diode Reverse Recovery
Time
trr
IF = 2.0A, dl/dt = 100A/μs(3)
-
206
ns
Body Diode Reverse Recovery
Charge
Qrr
-
0.76
μC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤2.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=53mH, IAS=2.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
510 15 20
1
2
3
4
Notes
1. 250㎲ Pulse Test
2. TC=25℃
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
ID,Drain Current [A]
VDS,Drain-Source Voltage [V]
-50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
0 2 4 6
2
3
4
5
6
7
8
VGS=10.0V
VGS=20V
RDS(ON) [Ω ]
ID,Drain Current [A]
2 4 6 8 10
0.1
1
10
-55℃
25℃
150℃
* Notes ;
1. Vds=30V
ID(A)
VGS [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
25℃
150℃
※ Notes :
1. VGS = 0 V
2.250s Pulse test
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
-50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID = 1.0A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
MDP2N60 (TO-220)
Fig.11 Transient Thermal Response Curve
MDP2N60 (TO-220)
10-1 100101102
10-2
10-1
100
101
102
100 s
100 ms
DC
10 ms 1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=2.32℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
0 2 4 6 8
0
2
4
6
8
10 120V
300V
480V
※ Note : ID = 2.0A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.12 Transient Thermal Response Curve
MDF2N60 (TO-220F)
10-1 100101102
10-2
10-1
100
101
102
100 s
100 ms
DC
10 ms1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=5.5℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
Fig.10 Maximum Safe Operating Area
MDF2N60 (TO-220F)
110
0
100
200
300
400
500 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Fig.15 Maximum Drain Current vs. Case
Temperature
Fig.13 Single Pulse Maximum Power
Dissipation MDP2N60 (TO-220)
Fig.14 Single Pulse Maximum Power
Dissipation MDF2N60 (TO-220F)
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
1000
2000
3000
4000
5000
6000
7000
single Pulse
RthJC = 2.32℃/W
TC = 25℃
Power (W)
Pulse Width (s)
25 50 75 100 125 150
0
1
2
3
ID, Drain Current [A]
TC, Case Temperature [℃]
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
2000
4000
6000
8000
single Pulse
RthJC = 5.5℃/W
TC = 25℃
Power (W)
Pulse Width (s)
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Physical Dimensions
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol Min Nom Max
A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55
Mar. 2014 Version 1.5 MagnaChip Semiconductor Ltd.
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MDP2N60/MDF2N60 N-channel MOSFET 600V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.