JDH3D01FV
2017-08-03
1
© 2005-2017
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
For wave detection
Small package
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (Handling
Precautions/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other
objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC
JEITA
TOSHIBA 1-2S1C
Characteristic Symbol Rating Unit
Reverse voltage VR 4 V
Forward current IF 25 mA
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF IF = 2 mA 0.25 V
Forward current IF VF = 0.5 V 25 mA
Reverse current IR VR = 0.5 V 25 uA
Capacitance C
T
V
R
= 0.2 V, f = 1 MHz 0.6 pF
B H
1.2±0.05
0.32±0.05
1
2
3
0.4
0.4
0.22±0.05
0.8
±
0.05
0.8±0.05
1.2
±
0.05
0.5±0.05
0.13±0.05
1. ANODE1
2. CATHODE2
3. CATHODE1/ANODE2
Weight: 1.5mg(typ.)
Start of commercial production
2004-
08
JDH3D01FV
2017-08-03
2
© 2005-2017
Toshiba Electronic Devices & Storage Corporation
IF-VF
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
00.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF(V)
IF(A)
Ta=25℃
IR-VR
1.E
-
07
1.E
-
06
1.E
-
05
1.E
-
04
1.E
-
03
1.E
-
02
1.E
-
01
1.E+00
0
1
2
3
4
5
6
VR(V)
IR(A)
Ta=25°C
JDH3D01FV
2017-08-03
3
© 2005-2017
Toshiba Electronic Devices & Storage Corporation
CT-VR
0.1
1
00.5 11.5 22.5 33.5 4
VR(V)
CT(pF)
f=1MHz
Ta=25℃
JDH3D01FV
2017-08-03
4
© 2005-2017
Toshiba Electronic Devices & Storage Corporation
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