SRANSYS MMBT3906 ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) SOT-28 Ideal for Medium Power Amplification and | joa Dim_| Min | Max Switching [c] a A 0.37 | 0.51 B 1.19 1.40 TOP VIEW [ Cc 2.10 | 2.50 Mechanical Data EF] Fy t D | 089 | 4.05 Case: SOT-23, Molded Plastic =| koe 7 E | 045 | 0.61 Terminals: Solderable per MIL-STD-202, |e G 1.78 | 2.05 Method 208 Wo H 2.65 | 3.05 Terminal Connections: See Diagram ul J 0.013 | 0.15 Marking: K3N, R2A ta aah Ye K 0.89 | 4.10 Weight: 0.008 grams (approx.) J L e L 045 | 061 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBT3906 Unit Collector-Base Voltage VcBo -40 Vv Collector-Emitter Voltage VcEO -40 Vv Emitter-Base Voltage VEBO -5.0 Vv Collector Current - Continuous (Note 1) Ic -200 mA Power Dissipation (Note 1) Pg 350 mw Thermal Resistance, Junction to Ambient (Note 1) R va 357 KW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%. Electrical Characteristics @ Ta = 25 C unless otherwise specified Characteristic [Symbol | Min | Max | Unit | Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)}CBO -40 Vv Ic =-10 A, le=0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vv Ic = -1.0MA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 Vv le=-10 A, Ic =0 Collector Cutoff Current IcEX -50 nA Voce = -30V, VeB(orFF) = -3.0V Base Cutoff Current IBL -50 nA Voce = -30V, VeBorr) = -3.0V ON CHARACTERISTICS (Note 2) 60 Io = -100UA, VcE= -1.0V 80 lo = -1.0MA, Voce = -1.0V DC Current Gain Are 100 300 lc= -10MA, Voce = -1.0V 60 lo = -50mA, VceE= -1.0V 30 lo =-100MA, Voce = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ors Vv IC = toma, ip = t om Base- Emitter Saturation Voltage Veesar) | 2-85 ie Vv IC = Boma ie = ome SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 45 pF Vos = -5.0V, f = 1.0MHz, le = 0 Input Capacitance Cibo 10 pF Ves = -0.5V, f = 1.0MHz, Ic = 0 Input Impedance hie 2.0 12 k Voltage Feedback Ratio hre 0.1 10 x104 | Voe= 10V, Ic = 1.0mA, Small Signal Current Gain hie 100 400 f= 1.0kHz Output Admittance Noe 3.0 60 $s Current Gain-Bandwidth Product tr 250 MHz Vc son Ic = -10mA, Noise Figure NF 40 dB Vce = -8.0V, Ic =-100 A, Rs =1.0k f= 1.0kHz SWITCHING CHARACTERISTICS Delay Time ta 35 ns Voc = -3.0V, Ic = -10mA, Rise Time tr 35 ns Vee(ott) = 0.5V, Ip1 = -1.0mMA Storage Time ts 225 ns Voc = -3.0V, Ic = -10mA, Fall Time tt 75 ns Ip1 = Ip2 = -1.0mMA Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s,dutycycle 2%.