SDP8436 Silicon Phototransistor FEATURES * Side-looking plastic package * 18 (nominal) acceptance angle * Enhanced coupling distance * Internal visible light rejection filter * Low profile for design flexibility * Wide sensitivity ranges * Mechanically matched to SEP8736 infrared emitting diode INFRA-82.TIF DESCRIPTION The SDP8436 is an NPN silicon phototransistor molded in a black plastic package which combines the mounting advantages of a side-looking package with the narrow acceptance angle and high optical gain of a T- 1 package. The SDP8436 is designed for those applications which require longer coupling distances than standard side- looking devices can provide, such as touch screens. The device is also well suited to applications in which adjacent channel crosstalk could be a problem. The package is highly transmissive to the IR source energy while it provides effective shielding against visible ambient light. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.005(0.12) 2 plc decimals 0.020(0.51) DIM_019.ds4 128 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 30 V 5V 100 mW [A] -40C to 85C -40C to 85C 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.78 mW/C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 129 SDP8436 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr Fig. 1 Responsivity vs Angular Displacement Fig. 2 gra_013.ds4 Collector Current vs Ambient Temperature Normalized collector current -40 -30 -20 -10 0 1.6 1.2 0.8 0.4 0.0 +10 +20 +30 +40 0 Angular displacement - degrees Fig. 3 gra_039.ds4 2.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.cdr Dark Current vs Temperature 10 20 30 40 50 60 70 80 Ambient temperature - C Fig. 4 gra_301.cdr Non-Saturated Switching Time vs Load Resistance gra_041.ds4 Response time - s 100 10 1 10 100 1000 10000 Load resistance - Ohms 130 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8436 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 0.0 600 Coupling Characteristics with SEP8736 gra_034.ds4 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Normalized light current Relative response gra_050.ds4 1.0 0.1 0.01 0.001 700 800 900 1000 1100 1200 0.1 Wavelength - nm 1.0 10 Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 131