Silicon Phototransistor
SDP8436
DESCRIPTION
FEATURES
Side-looking plastic package
•
18¡ (nominal) acceptance angle
•
Enhanced coupling distance
•
Internal visible light rejection filter
•
Low profile for design flexibility
•
Wide sensitivity ranges
•
Mechanically matched to SEP8736 infrared
emitting diode
•
The SDP8436 is an NPN silicon phototransistor molded
in a black plastic package which combines the mounting
advantages of a side-looking package with the narrow
acceptance angle and high optical gain of a T-1
package. The SDP8436 is designed for those
applications which require longer coupling distances
than standard side-looking devices can provide, such
as touch screens. The device is also well suited to
applications in which adjacent channel crosstalk could
be a problem. The package is highly transmissive to the
IR source energy while it provides effective shielding
against visible ambient light.
DIM_019.ds4
INFRA-82.TIF
OUTLINE DIMENSIONS
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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Silicon Phototransistor
SDP8436
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
100 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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129
Silicon Phototransistor
SDP8436
SWITCHING TIME TEST CIRCUIT
cir_015.cdr
SWITCHING WAVEFORM
cir_004.cdr
Responsivity vs
Angular Displacement
gra_013.ds4
Angular displacement - degrees
Relative response
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Collector Current vs
Ambient Temperature
gra_039.ds4
Ambient temperature - °C
Normalized collector
current
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vs
Temperature
gra_301.cdr
Fig. 3 Non-Saturated Switching Time vs
Load Resistance
gra_041.ds4
Load resistance - Ohms
Response time - µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
130
Silicon Phototransistor
SDP8436
Spectral Responsivity
gra_050.ds4
Wavelength - nm
Relative response
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
600 700 800 900 1000 1100 1200
Fig. 5 Coupling Characteristics
with SEP8736
gra_034.ds4
Lens-to-lens separation - inches
Normalized light
current
0.001
0.1
1.0
10
0.1 1.0 10
0.01
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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