2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications * Unit: mm High speed switching: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A) * High collector breakdown voltage: VCEO = 400 V * High DC current gain: hFE = 40 (min) (IC = 0.2 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 2 Pulse ICP 4 IB 0.5 Collector current Base current Collector power dissipation Ta = 25C Tc = 25C Junction temperature Storage temperature range PC 1.0 15 A A W JEDEC JEITA TOSHIBA Tj 150 C Tstg -55 to 150 C 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 1999-04 2013-11-01 2SC5548A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 20 A Emitter cut-off current IEBO VEB = 7 V, IC = 0 10 A Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 400 hFE (1) VCE = 5 V, IC = 1 mA 20 hFE (2) VCE = 5 V, IC = 0.2 A 40 100 Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A 1.3 V 0.5 3.0 0.3 20 s tr VCC 200 V IB1 Rise time Storage time Switching time IB2 tstg INPUT Fall time tf IB1 IC IB21 IB1 = 0.1 A, IB2 = -0.2 A 250 DC current gain OUTPUT s DUTY CYCLE 1% Marking C5548A Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 2SC5548A IC - VCE hFE - IC 2.0 1000 150 300 100 1.6 DC current gain hFE Collector current IC (A) 200 80 60 1.2 40 0.8 20 IB = 10 mA 0.4 Tc = 100C 100 25 30 -55 10 3 Common emitter Common emitter VCE = 5 V Tc = 25C 0 0 2 4 6 8 Collector-emitter voltage 1 0.001 10 0.003 0.01 VCE (sat) - IC Common emitter IC/IB = 8 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) (A) IC/IB = 8 Tc = 100C 25 -55 0.1 0.03 0.1 0.3 1 3 3 25 1 -55 Tc = 100C 0.3 0.1 0.01 10 0.1 0.03 0.3 Collector current IC (A) IC - VBE 3 1 (A) PC - Ta 2.0 20 (1) Tc = Ta infinite heat sink (2) No heat sink PC (W) Common emitter VCE = 5 V 1.6 Collector power dissipation (A) 3 VBE (sat) - IC Collector current IC Collector current IC 1 Common emitter 0.3 1.2 0.8 0.4 Tc = 100C 0 0 0.3 10 1 0.03 0.01 0.1 Collector current IC VCE (V) 10 3 0.03 0.4 25 0.8 Base-emitter voltage -55 1.2 16 12 8 4 (2) 0 0 1.6 VBE (V) (1) 25 50 75 100 125 150 175 200 Ambient temperature Ta (C) 3 2013-11-01 2SC5548A Transient thermal resistance rth (C/W) rth - tw 300 (2) 100 50 30 (1) 10 5 3 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 1 0.5 0.001 0.01 0.1 1 Pulse width 10 Safe Operating Area Switching Characteristics - IC 5 3 Switching time (s) (A) Collector current IC tstg 10 s* 1 ms* 1 0.3 DC operation Tc = 25C 10 ms* 0.1 IC = 8IB1 2IB1 = -IB2 VCC 200 V Pulse width = 20s Duty cycle 1 Tc = 25C 100 s* IC max (pulsed)* 3 IC max (continuous) 0.5 1000 tw (s) 10 5 100 100 ms* 1 0.5 0.3 0.05 tf 0.03 0.1 0.1 0.3 0.5 1 Collector current IC 0.01 0.005 *: Single nonrepetitive pulse Tc = 25C 0.003 Curves must be derated linearly with increase in temperature. 0.001 1 3 10 30 Collector-emitter voltage 3 5 10 (A) VCEO max 100 300 1000 VCE (V) 4 2013-11-01 2SC5548A RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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