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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
1
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
General Description
Features
Functional Diagram
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver ampliers which
operate between 3.0 and 4.5 GHz. The amplier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
Electrical Specications, TA = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplier
Parameter Min. Ty p . Max. Units
Frequency Range 3.0 - 4.5 GHz
Gain 18 21 dB
Gain Variation Over Temperature 0.025 0.035 dB / °C
Input Return Loss 12 dB
Output Return Loss 7 dB
Output Power for 1dB Compression (P1dB) 21 23.5 dBm
Saturated Output Power (Psat) 26 dBm
Output Third Order Intercept (IP3) 32 36 dBm
Noise Figure 5 dB
Supply Current (Icc) Vpd = 0V 1 uA
Supply Current (Icc) Vpd = 5V 110 130 160 mA
Control Current (Ipd) 7 mA
Switching Speed tOn/tOff 10 ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
P1dB vs. Temperature Psat vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Output IP3 vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
2 2.5 3 3.5 4 4.5 5 5.5 6
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
15
17
19
21
23
25
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
45
-8 -6 -4 -2 0 2 4 6 8 10 12
Output Power (dBm)
Gain (dB)
PAE (%)
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 3.5 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
3
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Reverse Isolation vs. Temperature Noise Figure vs. Temperature
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
-20
-15
-10
-5
0
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
12
15
18
21
24
27
0
30
60
90
120
150
1.5 2 2.5 3 3.5 4 4.5 5
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Vpd (Vdc)
Icc
P1dB
GAIN
PSAT
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
4
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage Range (Vpd) +5.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +15 d B m
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C) 0.916 W
Thermal Resistance
(junction to ground paddle) 71 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC326MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H326
XXXX
HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H326
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
5
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 104356 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2mm DC Header
C1 - C2 330 pF Capacitor, 0603 Pkg.
C3 0.7 pF Capacitor, 0603 Pkg.
C4 3.0 pF Capacitor, 0402 Pkg.
C5 2.2 µF Capacitor, Tantalum
L1 3.3 nH Inductor, 0805 Pkg.
U1 HMC326MS8G / HMC326MS8GE
Amplier
PCB [2] 104106 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
6
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Application Circuit
Recommended Component Values
L1 3.3 nH
C1 - C2 330 pF
C3 0.7 pF
C4 3.0 pF
C5 2.2 µF
TL1 TL2 TL3
Impedance 50 ohm 50 ohm 50 ohm
Physical Length 0.0614” 0.2561” 0.110 ”
Electrical Length @ 3.75 GHz 10.7° 44.6° 19.2°
Measurement Center of package pin to
center of capacitor C3.
Center of capacitor C3 to
center TL for inductor.
Center of TL for inductor to
edge of capacitor C4.
PCB Material: 10 mil Rogers 4350 or Arlon 25FR
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Analog Devices Inc.:
HMC326MS8GE 104356-HMC326MS8G HMC326MS8GETR HMC326MS8G HMC326MS8GTR