AO3453 30V P-Channel MOSFET General Description Product Summary * Low RDS(ON) * RoHS and Halogen-Free Compliant ID (at VGS=-10V) -30V -2.6A RDS(ON) (at VGS=-10V) < 115m VDS Applications * Load switch * PWM RDS(ON) (at VGS =-4.5V) < 150m RDS(ON) (at VGS =-2.5V) < 200m SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: May 2016 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V -13 PD TA=70C 12 -2.2 IDM TA=25C B Units V -2.6 ID TA=70C C Maximum -30 RJA RJL www.aosmd.com -55 to 150 Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3453 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -30 -1 TJ=55C -5 Gate-Body leakage current VDS=0V, VGS= 12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -13 VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance TJ=125C 88 115 143 200 A m 150 m m VDS=-5V, ID=-2.6A IS Maximum Body-Diode Continuous Current 8 -0.78 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 200 IS=-1A,VGS=0V Rg nA -1.4 103 Diode Forward Voltage Output Capacitance 100 -1 139 Forward Transconductance Reverse Transfer Capacitance A VGS=-2.5V, ID=-1A VSD Coss Units VGS=-4.5V, ID=-2A gFS Crss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz S -1 V -1.5 A 260 pF 37 pF 20 VGS=0V, VDS=0V, f=1MHz pF 8 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 15 nC Qg(4.5V) Total Gate Charge 3 9 nC Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-2.6A 4 0.7 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=5.76, RGEN=3 20 ns 5 ns IF=-2.6A, dI/dt=100A/s 11.5 Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/s 4.5 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. 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Rev.1.0: May 2016 www.aosmd.com Page 2 of 5 AO3453 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 -10V 12 -4.5V VDS=-5V 8 -3V -6V 6 -ID(A) -ID (A) 9 -2.5V 6 VGS=-2V 3 4 125C 2 25C 0 0 0 1 2 3 4 0 5 210 1 1.5 2 2.5 3 3.5 4 Normalized On-Resistance 2 190 VGS=-2.5V 170 RDS(ON) (m ) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 VGS=-4.5V 130 110 90 VGS=-10V 70 VGS=-10V ID=-2.6A 1.8 1.6 17 1.4 VGS=-4.5V 5 ID=-2A 2 1.2 10 VGS=-2.5V ID=-1A 1 0.8 50 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 250 ID=-2.6A 1.0E+01 40 1.0E+00 125C -IS (A) RDS(ON) (m ) 200 150 125C 25C 1.0E-02 1.0E-03 25C 100 1.0E-01 1.0E-04 1.0E-05 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: May 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3453 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=-15V ID=-2.6A 8 Ciss Capacitance (pF) -VGS (Volts) 300 6 4 200 Coss 100 2 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25C 1000 10s 1.0 RDS(ON) limited 100s 1ms 10ms 0.1 0.1 1 100 10 TJ(Max)=150C TA=25C 0.0 0.01 Power (W) -ID (Amps) 10.0 10s DC 10 1 0.00001 100 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PDM 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2016 www.aosmd.com Page 4 of 5 AO3453 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: May 2016 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5