VS-80EBU04HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt(R) FEATURES * Ultrafast recovery time * 175 C max. operating junction temperature * Screw mounting only Cathode * AEC-Q101 qualified Anode * PowerTab(R) package * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab(R) BENEFITS * Reduced RFI and EMI * Higher frequency operation PRODUCT SUMMARY * Reduced snubbing Package PowerTab(R) IF(AV) 80 A VR 400 V DESCRIPTION/APPLICATIONS VF at IF 0.92 V trr (typ.) See recovery table These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. * Reduced parts count TJ max. 175 C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR Continuous forward current IF(AV) TC = 122 C 80 Single pulse forward current IFSM TC = 25 C 800 Maximum repetitive forward current IFRM Square wave, 20 kHz 160 Operating junction and storage temperatures TJ, TStg A -55 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, Vr VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 80 A - 1.1 1.3 IF = 80 A, TJ = 175 C - 0.92 1.08 0.98 1.15 - 50 A IR = 100 A IF = 80 A, TJ = 125 C VR = VR rated - UNITS V Reverse leakage current IR TJ = 150 C, VR = VR rated - - 2 mA Junction capacitance CT VR = 200 V - 50 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 16-Jun-15 Document Number: 93997 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr MIN. TYP. MAX. IF = 1 A, dIF/dt = 200 A/s, VR = 30 V TEST CONDITIONS - 50 - TJ = 25 C - 87 - TJ = 125 C - 151 - - 9.3 - - 17.2 - IF = 80 A VR = 200 V dIF/dt = 200 A/s TJ = 25 C TJ = 125 C UNITS ns A TJ = 25 C - 405 - TJ = 125 C - 1300 - MIN. TYP. MAX. - - 0.5 - 0.2 - - - 5.02 - 0.18 - oz. - 2.4 (20) N*m (lbf * in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS C/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Marking device UNITS Case style PowerTab(R) g 80EBU04H Revision: 16-Jun-15 Document Number: 93997 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04HF4 Vishay Semiconductors 1000 1000 TJ = 175 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 C TJ = 125 C TJ = 25 C 10 100 125 C 10 1 25 C 0.1 0.01 0.001 1 0 0.5 1 1.5 2 0 2.5 100 200 300 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 1 D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 Single Pulse (Thermal Resistance) D = 0.02 D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Jun-15 Document Number: 93997 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04HF4 Vishay Semiconductors 180 250 Vr = 200 V TJ = 125 C TJ = 25 C 170 160 200 150 140 DC trr (ns) Allowable Case Temperature (C) www.vishay.com 130 120 IF = 160 A IF = 80 A IF = 40 A 150 110 100 100 Square wave (d = 0.50) rated Vr applied 90 80 0 20 40 60 80 100 50 100 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 4500 1 40 RMS Limit 3500 1 00 IF = 160 A IF = 80 A IF = 40 A 3000 Qrr (nC) Average Power Loss (W) Vr = 200 V TJ = 125 C TJ = 25 C 4000 1 20 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 40 20 20 40 60 80 100 2000 1500 1000 500 0 100 0 0 2500 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 16-Jun-15 Document Number: 93997 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04HF4 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 E B U 04 H F4 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Single diode 4 - PowerTab(R) 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80EBU04HF4 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 Revision: 16-Jun-15 Document Number: 93997 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab(R) 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) O 4.20 (O 0.16) O 4.00 (O 0.15) 4.95 (0.19) 4.75 (0.18) O 4.20 (O 0.16) O 4.00 (O 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.70 (0.19) 4.50 (0.18) 8.54 (0.34) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 08-Jun-15 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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