VS-80EBU04HF4
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Revision: 16-Jun-15 1Document Number: 93997
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Ultrafast Soft Recovery Diode, 80 A FRED Pt®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
Package PowerTab®
IF(AV) 80 A
VR400 V
VF at IF0.92 V
trr (typ.) See recovery table
TJ max. 175 °C
Diode variation Single die
Cathode Anode
PowerTab
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage VR400 V
Continuous forward current IF(AV) TC = 122 °C 80
ASingle pulse forward current IFSM TC = 25 °C 800
Maximum repetitive forward current IFRM Square wave, 20 kHz 160
Operating junction and
storage temperatures TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VrIR = 100 μA 400 - -
V
Forward voltage VF
IF = 80 A - 1.1 1.3
IF = 80 A, TJ = 175 °C - 0.92 1.08
IF = 80 A, TJ = 125 °C 0.98 1.15
Reverse leakage current IR
VR = VR rated - - 50 μA
TJ = 150 °C, VR = VR rated - - 2 mA
Junction capacitance CTVR = 200 V - 50 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 3.5 - nH
VS-80EBU04HF4
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Revision: 16-Jun-15 2Document Number: 93997
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V - 50 -
nsTJ = 25 °C
IF = 80 A
VR = 200 V
dIF/dt = 200 A/μs
-87-
TJ = 125 °C - 151 -
Peak recovery current IRRM
TJ = 25 °C - 9.3 - A
TJ = 125 °C - 17.2 -
Reverse recovery charge Qrr
TJ = 25 °C - 405 - nC
TJ = 125 °C - 1300 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case RthJC --0.5
°C/W
Thermal resistance,
junction to heatsink RthCS Mounting surface, flat, smooth and greased - 0.2 -
Weight - - 5.02 g
-0.18- oz.
Mounting torque 1.2
(10) -2.4
(20)
N · m
(lbf · in)
Marking device Case style PowerTab®80EBU04H
VS-80EBU04HF4
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-15 3Document Number: 93997
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
1000
0 0.5 1 1.5 2 2.5
TJ = 175 ˚C
TJ = 125 ˚C
TJ = 25 ˚C
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous
Forward Current (A)
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
0.01
0.1
1
10
100
1000
25 ˚C
T
J
= 175 ˚C
125 ˚C
0 100 200 300 400
V
R
-
Reverse Voltage (V)
C
T
-
Junction Capacitance (pF)
10
100
1000
1 10 100 1000
T
J
= 25 ˚C
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
VS-80EBU04HF4
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Revision: 16-Jun-15 4Document Number: 93997
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
90
80
100
110
120
130
150
170
140
160
180
0 20 40 60 80 100 120
DC
Square wave (d = 0.50)
rated Vr applied
Average Power Loss (W)
I
F(AV)
-
Average
Forward Current (A)
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
50
100 1000
100
150
200
250
IF = 160 A
IF = 80 A
IF = 40 A
Vr = 200 V
TJ = 125 ˚C
TJ = 25 ˚C
t
rr
(ns)
dI
F
/dt (A/μs)
0
100 1000
500
1000
1500
2000
2500
3000
3500
4000
4500
IF = 160 A
IF = 80 A
IF = 40 A
Vr = 200 V
TJ = 125 ˚C
TJ = 25 ˚C
Qrr (nC)
dIF/dt (A/μs)
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-80EBU04HF4
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-15 5Document Number: 93997
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
Device code
2- Current rating (80 = 80 A)
1- Vishay Semiconductors product
3- Single diode
4- PowerTab®
5- Ultrafast recovery
6- Voltage rating (04 = 400 V)
7- H = AEC-Q101 qualified
8- Environmental digit:
F4 = RoHS-compliant and totally lead (Pb)-free
621 43 5
80VS- E B U 04 F4H
87
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-80EBU04HF4 25 375 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95467
Application note www.vishay.com/doc?95179
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 08-Jun-15 1Document Number: 95240
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerTab®
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
4.70 (0.19)
4.50 (0.18)
4.95 (0.19)
4.75 (0.18)
5.20 (0.20)
4.95 (0.19)
18.25 (0.71)
18.00 (0.70)
27.65 (1.08)
27.25 (1.07)
39.8 (1.56)
39.6 (1.55)
12.40 (0.48)
12.10 (0.47)
8.54 (0.34)
8.20 (0.32)
15.60 (0.61)
14.80 (0.58)
5.45 REF.
(0.21 REF.)
1.30 (0.05)
1.10 (0.04)
3.09 (0.12)
3.00 (0.11)
1.35 (0.05)
1.20 (0.04)
0.60 (0.02)
0.40 (0.01) 12.20 (0.48)
12.00 (0.47)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 1
Lead 2
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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