BPW 34 FA
Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
Lead (Pb) Free Product - RoHS Compliant
BPW 34 FAS BPW 34 FASR
2007-03-30 1
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
Wesentliche Merkmale
Speziell geeignet für den Wellenlängenbereich
von 730 nm bis 1100 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BPW 34 FAS / FASR: geeignet für Reflow
Löten
Anwendungen
Automotomobil (z.B. Regensensor, Headset)
IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerung
Lichtschranken
Typ
Type Bestellnummer
Ordering Code Fotostrom, Ee=1 mW/cm2, VR = 5 V, λ = 870 nm
Photocurrent
Ip (μA)
BPW 34 FA Q62702P1129 50 (40)
BPW 34 FAS Q65110A3121 50 (40)
BPW 34 FASR Q65110A2699 50 (40)
Features
Especially suitable for the wavelength range of
730 nm to 1100 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 FAS / FASR: Suitable for reflow
soldering
Applications
Automotive (eg rain sensor, headset)
IR-remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
Photointerrupters
2007-03-30 2
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40+ 100 °C
Sperrspannung
Reverse voltage VR
VR (t < 2 min) 16
32 V
V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee=1 mW/cm2
Ip50 (40) μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 880 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of s ensitivity
S = 10% of Smax
λ7301100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L × B
L × W
2.65 × 2.65 mm × mm
Halbwinkel
Half angle ϕ ± 60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR 2 ( 30) nA
Spektrale Fotoempfindlichkeit
Spectr al sensitivity Sλ0.65 A/W
Quantenausbeute
Quantum yield η0.93 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO320 ( 250) mV
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
2007-03-30 3
Kurzschlussstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 23 μA
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 μA
tr, tf20 ns
Durchlassspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.03 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.9 × 10– 14
Nachweisgrenze, VR = 10 V,
Detection limit D* 6.8 × 1012
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
2007-03-30 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01428
e
0
10
P
Ι
-1
10 10 110 210 4
10 0
10 1
10 2
10 34
10
3
10
2
10
1
10
10 0
VO
μAmV
Ι
P
VO
2
W/cmμ
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10 0
10 1
10 2
10 3
nA
20 40 60 80 ˚C 100
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
2007-03-30 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 FA
BPW 34 FAS
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
Chip position
0...0.1
2007-03-30 6
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
Maße in mm (inch) / Dimensions in mm (inch).
BPW 34 FASR
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6916
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
0...0.1
Chip position
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
2007-03-30 7
Lötbedingungen BPW 34 FAS Vorbehandlung nach JEDEC Level 4
Soldering Conditions BPW 34 FASR Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) BPW 34 FA (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2007-03-30 8
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.