MMBT2907A
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■SILICO N EP ITA X IAL PLANA R PNP
TRANSISTOR
■MINIA TURE S OT- 23 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■TAP E & RE EL PA C K ING
■THE NP N COMP LE ME NT ARY T Y PE I S
MMBT2222A
APPLICATIONS
■WELL SU ITAB LE FOR PO RTAB L E
EQUIPMENT
■SMALL LO AD SWITCH TRA NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INTERNAL SCHEMATI C DIAG RAM
February 2003
SOT-23
Type Marking
MMBT2907A M29
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCBO Collector-Emitter Voltage (IE = 0) -60 V
VCEO Collector-Emitter Voltage (IB = 0) -60 V
VEBO Emitter-Base Voltage (I C = 0) -5 V
ICCollector Current -0.6 A
ICM Collector Peak Current (tp < 5 ms) -0.8 A
Ptot Total Dissipation at Tamb = 25 oC 350 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-amb •Thermal Resistance Junction-Ambient Max 357.1 oC/W
• Device mounted on a PCB area of 1 cm 2
ELE CT RICAL CHAR ACT ERIST ICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = -3 V) VCE = -30 V -50 nA
IBEX Base C ut-off Current
(VBE = -3 V) VCE = -30 V -50 nA
ICBO Collector Cut-off
Current (IE = 0) VCB = -50 V -10 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 m A -60 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA-60 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA -5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA -0.4
-1.6 V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA -1.3
-2.6 V
V
hFE∗DC Current Gain IC = -0.1 mA VCE = -10 V
IC = -1 mA VCE = -10 V
IC = -10 m A VCE = -10 V
IC = -150 mA VCE = -10 V
IC = -500 mA VCE = -10 V
75
100
100
100
50 300
fTTransition Frequency IC = -50 m A VCE = -20V f = 100MHz 200 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = -10 V f = 1 MHz 8 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = -2 V f = 1 MHz 30 pF
tdDelay Time IC = -150 mA IB = -15 mA
VCC = -30V 10 ns
trRise Time 40 ns
ton Switching On Time 45 ns
tsStorage Time IC = -150 mA IB1 = -IB2 = -15mA
VCC = -30V 190 ns
tfFall Time 30 ns
toff Switching Off Time 220 ns
∗ Pulsed: P ulse duratio n = 300 µs, d uty cy cle ≤ 2 %
MMBT2907A
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DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G2.1 2.582.6 98.4
H 0.38 0.48 14.9 18.8
L0.3 0.611.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
MMBT2907A
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MMBT2907A
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