SIEMENS FEATURES * High Current Transter Ratios at 5 mA: 50-600% at 1 mA: 60% typical (>13) Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VACRys * High Collector-Emitter Voltage, Vcgq=70 V * Low Saturation Voltage * Fast Switching Times * Figid-Effact Stable by TRIOS (TRansparent iOn Shield} * Temperature Stabila * Low Coupling Capacitance End-Stackable, .100"(2.54 mm) Spacing * High Common-Mode Interference immunity (Uncon- nected Base) e Underwriters Lab File #52744 * et VDE 0994 Avaliable with Option 1 SMD Option ~ See SFH6106/16/56 Data Sheet DESCRIPTION The SFHEISAA/AGB features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emit- ter, which is optically coupled to a silicon planar pho- totransistor detector, and is incorporated in a plastic DiP-4 package. Tha coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 805) for reinforced insulation up to an operation voltage of 400 Vays or DC. Specifications subject to change. SFH615AA/AGB 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches (mm) a) fp LY Pin One LD. Anode [1] [4_]cotlector a Cathode EI a [3 JEmiter 268 (6.81) 258 (6.48) i 190 (4.83) 175 (4. od _o 045 (1.14) 2 __ 030 (76) r (7.75) | = ssh gat ) {350 438 (a3 115 (2.92) e oo typ iS gag (1,92) 022 (88) * g12430) O18 ( 46) 1.00 (2.54) O08 (.20} ll Maximum Ratings Emitter Reverse VOHAQG 0. erect ecnseraee DC Forward Current Surge Forward Current (tpS10 US}... ccc cece renee 254 Total Power Dissipation... ernereeeres 100 mW Detector Collector-Emitter Voltage .... Emitter-Collector Voltage .. Collector Current... Collector Current (tpS1 M8)... ese consonance 100 mA Total Power Dissipation 0... ee ceeeeeeeernaee +450 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2B, NOV. 74 cece eet eeeeeeretteeeieee 5300 VACams CREB DAQE. cece er eee cet te tte treet ee tneeereeteds 27mm CIBALANCE ooo et teeter cere nt teeteeeiaaee >7 mm Insulation Thickness between Emitter and Detector. .20.4 mm Comparative Tracking Index per DIN JEC 112VDEO 303, part Vitec 2175 Isolation Resistance Vig=500 V, Ta=25C.... ee cece set cetre teetetnereee Vig=500 V, Ta=100C . Storage Temperature Range .. Ambient Temperature Range.. Junction Temperature.......... Soldering Temperature (max. 10s. Dip Soidering Distance to Seating Plane 21.5 MM)... ee 260C 5-239 Optecouplers (Optoisolators} ol Characteristics (T,=25C) Description Symbol | | un | Condition Emitter (IR Ges) _ ; oo _ | ForwardVollage =i(asti(itsrl ?~O~*#**d; C2 tS) (| COMA Reverse Currant - - Ir , G.01 (<10) pA | Vas6Vtt~* Capacitance Co 13 | pF oT VpsOV,fs1MHz | | Thermal Resistance Rina | 750 KW | - i [ Detector (SiPhototransietor) Capacitance _ _ _ Coe | 5.2 | pF Voe=s V, f= 1 MHz Thermal Resistance Package _ Callector-Emittar Saturation Voltage 0.25 (s0.4) Coupling Capacitance 0.4 Current Transter Ratio (|o/lp at Vce=5 V) and Colfector-Emitter Leakage Current [p= 10 mA, f=2.5 MA ae - Description AA AGB : lof Ip (lp=5 mA) 50-600 100-600 | % Collactor-Emitter Leakage Current, leeo 10 {s100) | 10 (sTO0) | nA Vce=10 Switching Operation (with saturation) ps5 mA | Ip-=5 mA 19K Turn-on Ti 2 Vogs5 V urn-on Time | toy 0 HS Turn-off Time | torr 25 bs 6-240 SFH615A4/AGB Figure 1, Current transfer ratlo (typ.) vs. temperature F210 mA, Vo_er0.5 Vv i a Tr % 5 1 | 10 -25 a 25 50 Th C75 Figure 4. Transletor capacitance (typ.) vs. collector-emitter voltage Ta=25C, f=1 MHz TTT GQ 107 101 10 wo VO 1 r Ve Figure 7. Permissible diode forward current vs. amblent temp. 1 BA 4, Bt WO Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage T,=25C E A & 20 ww a 5 np V6 To Figure 5. Permissiable pulse handling capabllity. Fwd. current vs. pulse width Pulse cycle D=parareter, Ty=25C 1 oe ow wm ef ow ws ~=t # 6-241 Me Figure 3. Diode forward voltage (typ.) vs. forward current 12 + 35C] 50" 7s" A y vj Yi i y | fl 10 ate HMA os | 1" 10 wo om 1? s}, Figure 6. Permissible power dissipation vs. ambient temp. : 2 H BO ~<] SFH6 15AA/AGB