Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±16
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±12 A
IDM Pulsed Drain Current ±100
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 16 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
08/19/05
IRF7210PbF
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
VDSS = -12V
RDS(on) = 0.007Ω
Description
Absolute Maximum Ratings
W
www.irf.com 1
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLead-Free
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
PD - 97040
IRF7210PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
––– .005 .007 VGS = -4.5V, ID = -16A
 .007 .010 VGS = -2.5V, ID = -12A
VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -500µA
gfs Forward Transconductance 16 ––– ––– S VDS = -10V, ID = -16A
––– ––– -10 VDS = -12V, VGS = 0V
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 212 ––– ID = -10A
Qgs Gate-to-Source Charge ––– 27 ––– nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 52 ––– VGS = -5.0V
td(on) Turn-On Delay Time ––– 50 ––– ns VDD = -10V
trRise Time ––– 3.0 ––– ID = -10A
td(off) Turn-Off Delay Time ––– 6.5 ––– RD = 1.0Ω
tfFall Time ––– 30 ––– RG = 6.2Ω
Ciss Input Capacitance ––– 17179 ––– VGS = 0V
Coss Output Capacitance ––– 9455 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 8986 ––– ƒ = 1.0kHz
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 165 247 ns TJ = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge ––– 296 444 nC di/dt = 85A/µs
Source-Drain Ratings and Characteristics
 
  -100
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
µs
S
D
G
IRF7210PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0
4
8
12
16
20
0246810
A
300µs PULSE WIDTH
T = 25°C
J
-0.8V
VGS
TOP -1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTOM -0.8V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
0
4
8
12
16
0246810
A
300µs PULSE WIDTH
T = 150°C
-0.8V
VGS
TOP -1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTOM -0.8V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
J
DS
D
0
20
40
60
80
100
120
140
0.0 2.0 4.0 6.0 8.0
T = 25°C
T = 150°C
J
J
A
V = -10V
300µs PULSE WIDTH
-I , Drain-to-Source Current (A)
DS
GS
D
-V , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-16A
IRF7210PbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
8000
12000
16000
20000
24000
024681012
C, Capacitance (pF)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
DS
-V , Drain-to-Source Voltage (V)
0
2
4
6
8
10
0 50 100 150 200 250 300
Q , Total Gate Charge (nC)
G
A
-V , Gate-to-Source Voltage (V)
I = -10A
V = -12V
DS
D
GS
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
Fig 8. Maximum Safe Operating Area.
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
0.0 2.0 4.0 6.0 8.0 10.0
T = 25°C
T = 150°C
J
J
V = 0V
GS
A
-V , Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
IRF7210PbF
www.irf.com 5
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7210PbF
6www.irf.com
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SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRF7210PbF
www.irf.com 7
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/05
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.