Rev.0 Aug. 01, 2008 page 1 of 4
HL6312G/13G
AlGaInP Laser Diodes ODE2008-00 (M)
Rev.0
Aug. 01, 2008
Description
The HL6312G/ 13 G are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength
is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
of optical equipment. Hermetic sealing of the package achieves high reliability.
Features
• Visible light output: λp = 635 nm Typ
• Single longitudinal mode
• Optical output power: 5 mW CW
• Low Operating voltage: 2.7 V Max
• Built-in photodiode for monitoring laser outpu t
• TM mode oscillation
Internal Circuit
• HL6312G Internal Circuit
• HL6313G
Package Type
• HL6312G/13G: LD/G2
LDPD
13
2
LDPD
13
2
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 5 mW
Pulse optical output power PO(pulse) 6 * mW
LD reverse voltage VR(LD) 2 V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +50 °C
Storage temperature Tstg –40 to +85 °C
Note: Pulse condition : Pulse width ≤ 1 μs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith 20 45 70 mA —
Operating current IOP — 55 85 mA PO = 5 mW
Operating voltage VOP — — 2.7 V PO = 5 mW
Beam divergence
parallel to the junction θ// 5 8 11 ° PO = 5 mW
Beam divergence
perpendicular to the junction θ⊥ 25 31 37 ° PO = 5 mW
Astigmatism AS — 8 — μm PO = 5 mW, NA = 0.55
Lasing wavelength λp 625 635 640 nm PO = 5 mW
Monitor current IS 0.2 0.4 0.8 mA PO = 5 mW, VR(PD) = 5 V
HL6312G/13G
Rev.0 Aug. 01, 2008 page 2 of 4
Typical Characteristic Curves
5
4
3
2
1
0020406080100
Forward current, I
F
(mA)
Optical output power, P
O
(mW)
Optical Output Power vs. Forward Current
T
C
= 0°C
50°C
25°C
−40 −20 0 20 40
Angle, θ ( ° )
Relative intensity
Parallel
Perpendicular P
O
= 5 mW
Far Field Pattern
100
0 1020304050
Case temperature, T
C
(°C)
Threshold current, Ith (mA)
Threshold Current vs. Case Temperature
10
Case temperature, T
C
(°C)
05010 403020
1
0.8
0.6
0.4
0.2
0
Monitor Current vs. Case Temperature
Monitor current, I
S
(mA)
P
O
= 5 mW
V
R(PD)
= 5 V
Case temperature, T
C
(°C)
0.5
0.4
0.3
0.2
0.1
010 20 30 40 50
Slope efficiency, ηs (mW/mA)
Slope Efficiency vs. Case Temperature
0
Case temperature, T
C
(°C)
638
636
634
632
630010 50403020
Lasing Wavelength vs. Case Temperature
Lasing wavelength, λp (nm)
640
642
644
646 P
O
= 5 mW
HL6312G/13G
Rev.0 Aug. 01, 2008 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/G2
—
—
1.1 g
123
1
2
3
9.0
+0
–0.025
φ
1.0 ± 0.1
0.4
+0.1
–0
(0.65)
(90°)
φ
7.2
+0.3
–0.2
φ
φ6.2 ± 0.2
( 2.0)
φ
Emitting Point
2.45
1.5 ± 0.1
9 ± 1
3 – 0.45 ± 0.1
3.5 ± 0.2 0.3
Glass
φ2.54 ± 0.35
As of July, 2002
Unit: mm
HL6312G/13G
Rev.0 Aug. 01, 2008 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, includin g intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten hum an life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaran teed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage wh en used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to rep roduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Op
next Ja
p
an, Inc
.
Taka
g
i Bld
g
., 3F, 1-3-9, Iwamoto-cho, Chi
y
oda-ku, Tok
y
o 101-0032, Japan
Tel: (03) 3865-5591
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