MICRONAS Edition Aug. 3, 2000 6251-425-2DS HAL556, HAL560, HAL566 Two-Wire Hall Effect Sensor Family MICRONAS HAL55x, HAL56x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview 12 12 14 16 4. 4.1. 4.2. 4.3. Type Descriptions HAL556 HAL560 HAL566 18 18 18 18 19 19 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD 20 6. Data Sheet History 2 Micronas HAL55x, HAL56x Two-Wire Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4 V to 24 V in the junction temperature range from -40 C up to 170 C. All sensors are available in the SMD-package SOT-89B and in the leaded version TO-92UA. 1.2. Family Overview The types differ according to the mode of switching and the magnetic switching points. Type Switching Behavior Sensitivity see Page 556 unipolar very high 12 560 unipolar inverted low 14 566 unipolar inverted very high 16 Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. 1.1. Features: - current output for two-wire applications - junction temperature range from -40 C up to 170 C. - operates from 4 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - switching offset compensation at typically 145 kHz - overvoltage and reverse-voltage protection - magnetic characteristics are robust against mechanical stress effects - constant magnetic switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 Micronas 3 HAL55x, HAL56x 1.3. Marking Code 1.6. Solderability All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. all packages: according to IEC68-2-58 Type During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Temperature Range A K E HAL556 556A 556K 556E HAL560 560A 560K 560E HAL566 566A 566K 566E Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. VDD 1 3 NC 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C 2 GND Fig. 1-1: Pin configuration E: TJ = -40 C to +100 C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer section 5.4. on page 19 for details. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 556, 560, or 566 Example: HAL556UA-E Type: 556 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 4 Micronas HAL55x, HAL56x 2. Functional Description The HAL 55x, HAL 56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external protection diode is needed for reverse voltages ranging from 0 V to -15 V. HAL55x, HAL 56x VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Comparator Current Source Switch Clock GND 2 Fig. 2-1: HAL55x, HAL 56x block diagram fosc t B BOFF BON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 s t Fig. 2-2: Timing diagram (example: HAL 56x) Micronas 5 HAL55x, HAL56x 3. Specifications 3.1. Outline Dimensions sensitive area 4.55 0.15 0.2 1.7 0.3 sensitive area 4.06 0.1 1.5 0.4 0.3 y y 2 3.05 0.1 4 0.2 0.48 top view 1 2 3 0.55 0.4 1 2 3 0.4 0.75 0.2 1.15 3.1 0.2 2.55 min. 0.25 0.36 0.4 1.5 14.0 min. 0.42 3.0 1.27 1.27 branded side 2.54 0.06 0.04 branded side SPGS0022-5-A3/2E Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas 6 SOT-89B TO-92UA x center of the package center of the package y 0.85 mm nominal 0.9 mm nominal 45 0.8 SPGS7002-9-A/2E Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001. Micronas HAL55x, HAL56x 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -151) 2) 282) V IDDZ Supply Current through Protection Device 1 -502) -2003) 502) 2003) mA mA TS Storage Temperature Range -65 150 C TJ Junction Temperature Range -40 -40 150 1704) C 1) -18 V with a 100 series resistor at 2) as long as T max is not exceeded J 2) with a 220 series resistance at pin 3) t < 2 ms 4) t < 1000 h pin 1 (-16 V with a 30 series resistor) 1 corresponding to test circuit 1 (see Fig. 5-3) Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 4 24 V TA Ambient Temperature for continuos operation -40 -40 851) 1252) C C ton Supply Time for pulsed mode 30 - s 1) when using the "A" type or the "K" type and 2) when using the "A" type and V DD 13.2 V VDD 16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 19 for details. Micronas 7 HAL55x, HAL56x 3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 4 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit IDDlow Low Current Consumption over Temperature Range 1 2 3.3 5 mA IDDhigh High Current Consumption over Temperature Range 1 12 14.3 17 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms fosc Internal Oscillator Chopper Frequency - 90 145 - kHz TJ = 25 C fosc Internal Oscillator Chopper Frequency over Temperature Range - 75 145 - kHz ten(O) Enable Time of Output after Setting of VDD 1 20 30 s 1) tr Output Rise Time 1 0.4 1.6 s VDD = 12 V, Rs = 30 tf Output Fall Time 1 0.4 1.6 s VDD = 12 V, Rs = 30 RthJSB case SOT-89B Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) B > BON + 2 mT or B < BOFF - 2 mT for HAL 55x, Conditions B > BOFF + 2 mT or B < BON - 2 mT for HAL 56x 5.0 2.0 2.0 1.0 Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas HAL55x, HAL56x 3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL 556 -40 C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mT unipolar 25 C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mT 100 C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mT 170 C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 mT HAL 560 -40 C 41 46.5 52 47 53 59 4 6.5 10 mT unipolar 25 C 41 46.6 52 46 52.5 58.5 3 6 9 mT inverted 100 C 41 45.7 52 45 41.1 57.5 2 5.4 8 mT 170 C 38 44.2 50 42 49 55.5 2 4.8 8 mT HAL 566 -40 C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mT unipolar 25 C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mT inverted 100 C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT 170 C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 mT Note: For detailed descriptions of the individual types, see pages 12 and following. Micronas 9 HAL55x, HAL56x mA 25 mA 20 HAL 55x, HAL 56x 18 20 IDD HAL 55x, HAL 56x IDDhigh 15 IDD 16 IDDhigh 14 10 12 5 VDD = 4 V IDDlow 0 -5 -10 8 VDD = 24 V 6 TA = 25 C 4 IDDlow 2 TA = 170 C -20 -15-10 -5 0 VDD = 12 V TA = -40 C TA = 100 C -15 10 5 10 15 20 25 30 35 V 0 -50 0 50 100 VDD HAL 55x, HAL 56x 18 IDD 200 C TA Fig. 3-4: Typical current consumption versus supply voltage mA 20 150 Fig. 3-6: Typical current consumption versus ambient temperature kHz 200 HAL 55x, HAL 56x 180 16 fosc 160 IDDhigh 14 140 12 120 TA = -40 C 10 TA = 25 C TA = 100 C 8 100 VDD = 4 V 80 VDD = 12 V TA = 170 C 6 IDDlow 4 40 2 0 20 0 1 2 3 4 5 6 V VDD Fig. 3-5: Typical current consumption versus supply voltage 10 VDD = 24 V 60 0 -50 0 50 100 150 200 C TA Fig. 3-7: Typ. internal chopper frequency versus ambient temperature Micronas HAL55x, HAL56x kHz 200 HAL 55x, HAL 56x kHz 200 180 180 fosc 160 fosc 160 140 140 120 120 100 HAL 55x, HAL 56x 100 TA = -40 C TA = -40 C 80 TA = 25 C TA = 100 C 60 80 TA = 25 C 60 TA = 100 C TA = 170 C TA = 170 C 40 40 20 20 0 0 5 10 15 20 25 30 V VDD Fig. 3-8: Typ. internal chopper frequency versus supply voltage Micronas 0 3 4 5 6 7 8 V VDD Fig. 3-9: Typ. internal chopper frequency versus supply voltage 11 HAL556 4. Type Description Applications 4.1. HAL 556 The HAL 556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The HAL 556 is a very sensitive unipolar switching sensor (see Fig. 4-1). - applications with large airgap or weak magnets, The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption In the HAL 55x, HAL 56x two-wire sensor family, the HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic. IDDhigh BHYS IDDlow Magnetic Features: - switching type: unipolar 0 - very high sensitivity BOFF BON B Fig. 4-1: Definition of magnetic switching points for the HAL 556 - typical BON: 6 mT at room temperature - typical BOFF: 4 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 25 C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 100 C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mT 140 C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mT 170 C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 4.2 mT 5.2 2.7 4.9 mT 6.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - upper limit for BHYS at -40 C, 25 C, and 100 C; limits for BOffset at 25 C changed - specification for 140 C and 170 C added 12 Micronas HAL556 mT 8 mT 8 HAL 556 HAL 556 BONmax BON BOFF 7 BON BOFF BON 7 BONtyp 6 6 5 5 BOFFmax BOFF BOFFtyp 4 4 3 3 TA = -40 C 2 2 TA = 25 C BONmin BOFFmin TA = 100 C 1 0 VDD = 4 V 1 TA = 170 C 0 5 10 15 20 25 30 V Fig. 4-2: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 24 V 0 50 100 150 200 C TA, TJ VDD mT 8 0 -50 VDD = 12 V HAL 556 Fig. 4-4: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BON 6 5 BOFF 4 3 TA = -40 C 2 TA = 25 C TA = 100 C 1 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. magnetic switching points versus supply voltage Micronas 13 HAL560 4.2. HAL 560 Applications The HAL 560 is a low sensitive unipolar switching sensor with an inverted output (see Fig. 4-5). The HAL 560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with strong magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. Magnetic Features: Current consumption - switching type: unipolar inverted IDDhigh - low sensitivity BHYS - typical BON: 45.6 mT at room temperature - typical BOFF: 51.7 mT at room temperature IDDlow - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON BOFF B Fig. 4-5: Definition of magnetic switching points for the HAL 560 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 41 46.5 52 47 53 59 4 6.5 10 49.8 mT 25 C 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mT 100 C 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mT 140 C 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mT 170 C 38 44.2 50 42 49 55.5 2 4.8 8 46.6 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - tighter specification for BOFF at -40 C, 25 C, and 100 C - specification for 140 C and 170 C added 14 Micronas HAL560 mT 60 HAL 560 mT 60 HAL 560 BOFFmax BON BOFF 55 BON BOFF 55 BOFF 50 50 BOFFtyp BONmax BONtyp BON 45 45 BOFFmin TA = -40 C 40 40 TA = 25 C BONmin TA = 100 C TA = 170 C 35 VDD = 4 V 35 VDD = 12 V VDD = 24 V 30 0 5 10 15 20 25 30 V Fig. 4-6: Typ. magnetic switching points versus supply voltage HAL 560 BON BOFF 55 0 50 100 150 200 C TA, TJ VDD mT 60 30 -50 Fig. 4-8: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 50 45 BON TA = -40 C 40 TA = 25 C TA = 100 C TA = 170 C 35 30 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas 15 HAL566 4.3. HAL 566 Applications The HAL 566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4-9). The HAL 566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In the HAL 55x, HAL 56x two-wire sensor family, the HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: - switching type: unipolar inverted IDDlow - high sensitivity - typical BON: 4 mT at room temperature 0 - typical BOFF: 5.9 mT at room temperature BON BOFF B Fig. 4-9: Definition of magnetic switching points for the HAL 566 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 100 C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 4.7 mT 140 C 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 4.4 mT 170 C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 4.1 mT -40 C 25 C Min. Typ. Unit Min. Max. 5 3 4.9 mT 6.2 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - specification for 140 C and 170 C added 16 Micronas HAL566 mT 8 BON BOFF mT 8 HAL 566 7 BON BOFF BOFF 6 HAL 566 BOFFmax 7 6 BONmax 5 BONtyp BON 4 4 3 3 TA = -40 C 2 2 TA = 25 C TA = 100 C 1 0 0 5 10 15 20 BONmin VDD = 4 V 25 30 V 0 -50 VDD = 12 V VDD = 24 V 0 50 100 150 200 C TA, TJ Fig. 4-10: Typ. magnetic switching points versus supply voltage mT 8 BOFFmin 1 TA = 170 C VDD BON BOFF BOFFtyp 5 HAL 566 Fig. 4-12: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BOFF 6 5 4 BON 3 TA = -40 C 2 TA = 25 C TA = 100 C 1 0 TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-11: Typ. magnetic switching points versus supply voltage Micronas 17 HAL55x, HAL56x 5. Application Notes 5.2. Extended Operating Conditions 5.1. Application Circuit All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Figure 5-1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 4 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: Typically, the sensors operate with supply voltages above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 4 V is not tested on a regular base. For special test conditions, please contact Micronas. * 4V V R Lmax + SUPmin 17 mA 1 VDD VSUP 5.3. Start-up Behavior VSIG RL 2 GND Fig. 5-1: Application Circuit 1 Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the current consumption is not defined and can toggle between low and high. HAL556: For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 to 30 ) and a capacitor both placed close to the sensor are recommended (see figure 5-2). In this case, the maximum RL can be calculated as: HAL560, HAL 566: * 4V V R Lmax + SUPmin * RV 17 mA 1 VDD VSUP After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. RV VSIG 4.7 nF RL 2 GND In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. Fig. 5-2: Application Circuit 2 18 Micronas HAL55x, HAL56x 5.4. Ambient Temperature 5.5. EMC and ESD Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-2). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. TJ = TA + T At static conditions and continuous operation, the following equation is valid: T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 s to 1 ms, the following equation can be used: Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. Note: The international standard ISO 7637 is similar to the product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV1 100 RV2 30 1 VDD VEMC NC 4.7 nF 2 GND t on DT + I DD * V DD * R th * t off ) t on Fig. 5-3: Recommended EMC test circuit Micronas 19 HAL55x, HAL56x 6. Data Sheet History 1. Final data sheet: "HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, April 6, 1999, 6251-425-1DS. First release of the final data sheet. 2 Final data sheet: "HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, Aug. 3, 2000, 6251-425-2DS. Second release of the final data sheet. Major changes: - magnetic characteristics for HAL 556 and HAL 560 changed. Please refer to pages 12 and 14 for details. - new temperature ranges "K" and "A" added - temperature range "C" removed - outline dimensions for SOT-89B: reduced tolerances - SMD package SOT-89A removed Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (08/2000) Order No. 6251-425-2DS 20 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. 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