HAL560UA-E - Micronas Semiconductor

HAL556, HAL560,

HAL566

Two-Wire Hall Effect

Edition Aug. 3, 2000

6251-425-2DS

MICRONAS

Sensor Family

HAL55x, HAL56x

2 Micronas

Contents

Page Section Title

3 1. Introduction

3 1.1. Features

3 1.2. Family Overview

4 1.3. Marking Code

4 1.4. Operating Junction Temperature Range

4 1.5. Hall Sensor Package Codes

4 1.6. Solderability

5 2. Functional Description

6 3. Specifications

6 3.1. Outline Dimensions

6 3.2. Dimensions of Sensitive Area

6 3.3. Positions of Sensitive Areas

7 3.4. Absolute Maximum Ratings

7 3.5. Recommended Operating Conditions

8 3.6. Electrical Characteristics

9 3.7. Magnetic Characteristics Overview

12 4. Type Descriptions

12 4.1. HAL556

14 4.2. HAL560

16 4.3. HAL566

18 5. Application Notes

18 5.1. Application Circuit

18 5.2. Extended Operating Conditions

18 5.3. Start-up Behavior

19 5.4. Ambient Temperature

19 5.5. EMC and ESD

20 6. Data Sheet History

HAL55x, HAL56x

3Micronas

Two-Wire Hall Effect Sensor Family

in CMOS technology

Release Notes: Revision bars indicate significant

changes to the previous edition.

1. Introduction

This sensor family consists of different two-wire Hall

switches produced in CMOS technology. All sensors

change the current consumption depending on the ex-

ternal magnetic field and require only two wires between

sensor and evaluation circuit. The sensors of this family

differ in the magnetic switching behavior and switching

points.

The sensors include a temperature-compensated Hall

plate with active offset compensation, a comparator, and

a current source. The comparator compares the actual

magnetic flux through the Hall plate (Hall voltage) with

the fixed reference values (switching points). According-

ly, the current source is switched on (high current

consumption) or off (low current consumption).

The active offset compensation leads to constant mag-

netic characteristics in the full supply voltage and tem-

perature range. In addition, the magnetic parameters

are robust against mechanical stress effects.

The sensors are designed for industrial and automotive

applications and operate with supply voltages from 4 V

to 24 V in the junction temperature range from –40 °C up

to 170 °C. All sensors are available in the SMD-package

SOT-89B and in the leaded version TO-92UA.

1.1. Features:

– current output for two-wire applications

– junction temperature range from –40 °C up to 170 °C.

– operates from 4 V to 24 V supply voltage

– operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

– switching offset compensation at typically 145 kHz

– overvoltage and reverse-voltage protection

– magnetic characteristics are robust against mechani-

cal stress effects

– constant magnetic switching points over a wide supply

voltage range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by

a built-in negative temperature coefficient of the mag-

netic characteristics

– ideal sensor for applications in extreme automotive

and industrial environments

– EMC corresponding to DIN 40839

1.2. Family Overview

The types differ according to the mode of switching and

the magnetic switching points.

Type Switching

Behavior Sensitivity see

Page

556 unipolar very high 12

560 unipolar

inverted low 14

566 unipolar

inverted very high 16

Unipolar Switching Sensors:

The sensor turns to high current consumption with the

magnetic south pole on the branded side of the package

and turns to low consumption if the magnetic field is

removed. The sensor does not respond to the magnetic

north pole on the branded side.

Unipolar Inverted Switching Sensors:

The sensor turns to low current consumption with the

magnetic south pole on the branded side of the package

and turns to high consumption if the magnetic field is

removed. The sensor does not respond to the magnetic

north pole on the branded side.

HAL55x, HAL56x

4 Micronas

1.3. Marking Code

All Hall sensors have a marking on the package surface

(branded side). This marking includes the name of the

sensor and the temperature range.

Type Temperature Range

A K E

HAL556 556A 556K 556E

HAL560 560A 560K 560E

HAL566 566A 566K 566E

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip

temperature (junction temperature TJ).

A: TJ = –40 °C to +170 °C

K: TJ = –40 °C to +140 °C

E: TJ = –40 °C to +100 °C

Note: Due to the high power dissipation at high current

consumption, there is a difference between the ambient

temperature (TA) and junction temperature. Please refer

section 5.4. on page 19 for details.

1.5. Hall Sensor Package Codes

Type: 556, 560, or 566

HALXXXPA-T

Temperature Range: A, K, or E

Package: SF for SOT-89B

UA for TO-92UA

→ Type: 556

→ Package: TO-92UA

→ Temperature Range: TJ = –40 °C to +100 °C

Example: HAL556UA-E

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Ordering Codes for Hall

Sensors”.

1.6. Solderability

all packages: according to IEC68-2-58

During soldering reflow processing and manual rework-

ing, a component body temperature of 260 °C should not

be exceeded.

Components stored in the original packaging should

provide a shelf life of at least 12 months, starting from the

date code printed on the labels, even in environments as

extreme as 40 °C and 90% relative humidity.

Fig. 1–1: Pin configuration

GND

1VDD

HAL55x, HAL56x

5Micronas

2. Functional Description

The HAL55x, HAL56x two-wire sensors are monolithic

integrated circuits which switch in response to magnetic

fields. If a magnetic field with flux lines perpendicular to

the sensitive area is applied to the sensor, the biased

Hall plate forces a Hall voltage proportional to this field.

The Hall voltage is compared with the actual threshold

level in the comparator. The temperature-dependent

bias increases the supply voltage of the Hall plates and

adjusts the switching points to the decreasing induction

of magnets at higher temperatures.

If the magnetic field exceeds the threshold levels, the

current source switches to the corresponding state. In

the low current consumption state, the current source is

switched off and the current consumption is caused only

by the current through the Hall sensor. In the high current

consumption state, the current source is switched on

and the current consumption is caused by the current

through the Hall sensor and the current source. The

built-in hysteresis eliminates oscillation and provides

switching behavior of the output signal without bounc-

ing.

Magnetic offset caused by mechanical stress is com-

pensated for by using the “switching offset compensa-

tion technique”. An internal oscillator provides a two-

phase clock. In each phase, the current is forced through

the Hall plate in a different direction, and the Hall voltage

is measured. At the end of the two phases, the Hall volt-

ages are averaged and thereby the offset voltages are

eliminated. The average value is compared with the

fixed switching points. Subsequently, the current con-

sumption switches to the corresponding state. The

amount of time elapsed from crossing the magnetic

switching level to switching of the current level can vary

between zero and 1/fosc.

Shunt protection devices clamp voltage peaks at the

VDD-pin together with external series resistors. Reverse

current is limited at the VDD-pin by an internal series

resistor up to –15 V. No external protection diode is

needed for reverse voltages ranging from 0 V to –15 V.

Fig. 2–1: HAL55x, HAL56x block diagram

Temperature

Dependent

Bias

Switch

Hysteresis

Control

Comparator Current

Source

VDD

Clock

Hall Plate

GND

HAL55x, HAL56x

Reverse

Voltage &

Overvoltage

Protection

IDDlow

IDD

1/fosc = 6.9 µs

IDDhigh

BOFF

fosc

IDD

BON

Fig. 2–2: Timing diagram (example: HAL56x)

HAL55x, HAL56x

6 Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

Plastic Small Outline Transistor Package

(SOT-89B)

Weight approximately 0.035 g

Dimensions in mm

4.55

1.7

min.

0.25

2.55

0.40.4

0.4

1.5

3.0

0.06±0.04

branded side

SPGS0022-5-A3/2E

123

4±0.2

0.15

0.3 2

∅0.2

sensitive area

top view

1.15

3.2. Dimensions of Sensitive Area

0.25 mm x 0.12 mm

3.3. Positions of Sensitive Areas

SOT-89B TO-92UA

xcenter of

the package center of

the package

y0.85 mm nominal 0.9 mm nominal

Fig. 3–2:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g

Dimensions in mm

0.75±0.2

3.1±0.2

0.55

branded side

0.36

0.8

0.3

45°

14.0

min.

1.271.27

2.54

123

0.42

4.06±0.1

3.05±0.1

0.48

SPGS7002-9-A/2E

∅0.4

sensitive area

1.5

Note: For all package diagrams, a mechanical tolerance

of ±0.05 mm applies to all dimensions where no tolerance

is explicitly given.

The improvement of the TO-92UA package with the re-

duced tolerances will be introduced end of 2001.

HAL55x, HAL56x

7Micronas

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1–151) 2) 282) V

IDDZ Supply Current through

Protection Device

1–502)

–2003) 502)

2003) mA

TSStorage Temperature Range –65 150 °C

TJJunction Temperature Range –40

–40

150

1704) °C

1) –18 V with a 100 Ω series resistor at pin 1 (–16 V with a 30 Ω series resistor)

2) as long as TJmax is not exceeded

2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)

3) t<2 ms

4) t<1000 h

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the

“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-

mum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 4 24 V

TAAmbient Temperature for continuos

operation

–40

851)

1252) °C

°C

ton Supply Time for pulsed mode 30 –µs

1) when using the “A” type or the ”K” type and VDD ≤ 16 V

2) when using the “A” type and VDD ≤ 13.2 V

Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-

ature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage

on and off (pulse mode). Please refer to section 5.4. on page 19 for details.

HAL55x, HAL56x

8 Micronas

3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDDlow Low Current Consumption

over Temperature Range 1 2 3.3 5 mA

IDDhigh High Current Consumption

over Temperature Range 1 12 14.3 17 mA

VDDZ Overvoltage Protection

at Supply 1–28.5 32 V IDD = 25 mA, TJ = 25 °C,

t = 20 ms

fosc Internal Oscillator

Chopper Frequency –90 145 –kHz TJ = 25 °C

fosc Internal Oscillator Chopper Fre-

quency over Temperature Range –75 145 –kHz

ten(O) Enable Time of Output after

Setting of VDD

1 20 30 µs1)

trOutput Rise Time 1 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω

tfOutput Fall Time 1 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω

RthJSB

case

SOT-89B

Thermal Resistance Junction

to Substrate Backside – – 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 3–3

RthJA

case

TO-92UA

Thermal Resistance Junction

to Soldering Point – – 150 200 K/W

1) B > BON + 2 mT or B < BOFF – 2 mT for HAL55x, B > BOFF + 2 mT or B < BON – 2 mT for HAL56x

Fig. 3–3: Recommended pad size SOT-89B

Dimensions in mm

5.0

2.0

1.0

HAL55x, HAL56x

9Micronas

3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit

Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.

HAL 556 –40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mT

unipolar 25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mT

100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mT

170 °C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 mT

HAL 560 –40 °C 41 46.5 52 47 53 59 4 6.5 10 mT

unipolar 25 °C 41 46.6 52 46 52.5 58.5 3 6 9 mT

inverted 100 °C 41 45.7 52 45 41.1 57.5 2 5.4 8 mT

170 °C 38 44.2 50 42 49 55.5 2 4.8 8 mT

HAL 566 –40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mT

unipolar 25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mT

inverted 100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT

170 °C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 mT

Note: For detailed descriptions of the individual types, see pages 12 and following.

HAL55x, HAL56x

10 Micronas

–20

–15

–10

–5

–15–10 –5 0 5 101520253035

VDD

IDD

TA = –40 °C

TA = 25 °C

TA = 100 °C

25 HAL55x, HAL56x

Fig. 3–4: Typical current consumption

versus supply voltage

IDDlow

IDDhigh

TA = 170 °C

0123456

VDD

IDD

HAL55x, HAL56x

Fig. 3–5: Typical current consumption

versus supply voltage

IDDlow

IDDhigh

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–50 0 50 100 150 200°C

IDD

Fig. 3–6: Typical current consumption

versus ambient temperature

HAL55x, HAL56x

IDDhigh

IDDlow

VDD = 4 V

VDD = 12 V

VDD = 24 V

100

120

140

160

180

200

–50 0 50 100 150 200°C

kHz

fosc

Fig. 3–7: Typ. internal chopper frequency

versus ambient temperature

HAL55x, HAL56x

VDD = 4 V

VDD = 12 V

VDD = 24 V

HAL55x, HAL56x

11Micronas

100

120

140

160

180

200

0 5 10 15 20 25 30 V

kHz

VDD

fosc

Fig. 3–8: Typ. internal chopper frequency

versus supply voltage

HAL55x, HAL56x

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

100

120

140

160

180

200

345678

kHz

VDD

fosc

Fig. 3–9: Typ. internal chopper frequency

versus supply voltage

HAL55x, HAL56x

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

HAL556

12 Micronas

4. Type Description

4.1. HAL556

The HAL556 is a very sensitive unipolar switching sen-

sor (see Fig. 4–1).

The sensor turns to high current consumption with the

magnetic south pole on the branded side of the package

and turns to low current consumption if the magnetic

field is removed. It does not respond to the magnetic

north pole on the branded side.

For correct functioning in the application, the sensor re-

quires only the magnetic south pole on the branded side

of the package.

In the HAL55x, HAL56x two-wire sensor family, the

HAL566 is a sensor with the same magnetic character-

istics but with an inverted output characteristic.

Magnetic Features:

–switching type: unipolar

–very high sensitivity

–typical BON: 6 mT at room temperature

–typical BOFF: 4 mT at room temperature

–operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL556 is designed for applications with one mag-

netic polarity and weak magnetic amplitudes at the sen-

sor position such as:

–applications with large airgap or weak magnets,

–solid state switches,

–contactless solutions to replace micro switches,

–position and end point detection, and

–rotating speed measurement.

BHYS

Current consumption

BOFF

IDDlow

Fig. 4–1: Definition of magnetic switching points for

the HAL556

IDDhigh

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit

TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

–40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 5.2 mT

25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 2.7 4.9 6.5 mT

100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mT

140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mT

170 °C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 4.2 mT

The hysteresis is the difference between the switching points BHYS = BON – BOFF

The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2

Changes to the previous edition:

–upper limit for BHYS at –40 °C, 25 °C, and 100 °C; limits for BOffset at 25 °C changed

–specification for 140 °C and 170 °C added

HAL556

13Micronas

0 5 10 15 20 25 30 V

VDD

BON

BOFF

HAL556

BON

BOFF

Fig. 4–2: Typ. magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

BON

BOFF

HAL556

BON

BOFF

Fig. 4–3: Typ. magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–50 0 50 100 150 200°C

TA, TJ

BON

BOFF

BONmax

BONtyp

BONmin

BOFFmax

BOFFtyp

BOFFmin

HAL556

Fig. 4–4: Magnetic switching points

versus temperature

VDD = 4 V

VDD = 12 V

VDD = 24 V

Note: In the diagram “Magnetic switching points versus

temperature” the curves for BONmin, BONmax,

BOFFmin, and BOFFmax refer to junction temperature,

whereas typical curves refer to ambient temperature.

HAL560

14 Micronas

4.2. HAL560

The HAL560 is a low sensitive unipolar switching sensor

with an inverted output (see Fig. 4–5).

The sensor turns to low current consumption with the

magnetic south pole on the branded side of the package

and turns to high current consumption if the magnetic

field is removed. It does not respond to the magnetic

north pole on the branded side.

For correct functioning in the application, the sensor re-

quires only the magnetic south pole on the branded side

of the package.

Magnetic Features:

–switching type: unipolar inverted

–low sensitivity

–typical BON: 45.6 mT at room temperature

–typical BOFF: 51.7 mT at room temperature

–operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL560 is designed for applications with one mag-

netic polarity and strong magnetic amplitudes at the sen-

sor position where an inverted output signal is required

such as:

–applications with strong magnets,

–solid state switches,

–contactless solutions to replace micro switches,

–position and end point detection, and

–rotating speed measurement.

BHYS

OFF

BON B

Fig. 4–5: Definition of magnetic switching points for

the HAL560

IDDhigh

IDDlow

Current consumption

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit

TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

–40 °C 41 46.5 52 47 53 59 4 6.5 10 49.8 mT

25 °C 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mT

100 °C 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mT

140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mT

170 °C 38 44.2 50 42 49 55.5 2 4.8 8 46.6 mT

The hysteresis is the difference between the switching points BHYS = BOFF – BON

The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2

Changes to the previous edition:

–tighter specification for BOFF at –40 °C, 25 °C, and 100 °C

–specification for 140 °C and 170 °C added

HAL560

15Micronas

0 5 10 15 20 25 30 V

VDD

BON

BOFF

HAL560

BON

BOFF

Fig. 4–6: Typ. magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

BON

BOFF

HAL560

BON

BOFF

Fig. 4–7: Typ. magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–50 0 50 100 150 200°C

TA, TJ

BON

BOFF

BONmax

BONtyp

BONmin

BOFFmax

BOFFtyp

BOFFmin

HAL560

Fig. 4–8: Magnetic switching points

versus temperature

VDD = 4 V

VDD = 12 V

VDD = 24 V

Note: In the diagram “Magnetic switching points versus

temperature” the curves for BONmin, BONmax,

BOFFmin, and BOFFmax refer to junction temperature,

whereas typical curves refer to ambient temperature.

HAL566

16 Micronas

4.3. HAL566

The HAL566 is a very sensitive unipolar switching

sensor with an inverted output (see Fig. 4–9).

The sensor turns to low current consumption with the

magnetic south pole on the branded side of the package

and turns to high current consumption if the magnetic

field is removed. It does not respond to the magnetic

north pole on the branded side.

For correct functioning in the application, the sensor re-

quires only the magnetic south pole on the branded side

of the package.

In the HAL55x, HAL56x two-wire sensor family, the

HAL556 is a sensor with the same magnetic character-

istics but with a normal output characteristic.

Magnetic Features:

–switching type: unipolar inverted

–high sensitivity

–typical BON: 4 mT at room temperature

–typical BOFF: 5.9 mT at room temperature

–operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL566 is designed for applications with one mag-

netic polarity and weak magnetic amplitudes at the sen-

sor position where an inverted output signal is required

such as:

–applications with large airgap or weak magnets,

–solid state switches,

–contactless solutions to replace micro switches,

–position and end point detection, and

–rotating speed measurement.

BHYS

OFF

BON B

Fig. 4–9: Definition of magnetic switching points for

the HAL566

IDDhigh

IDDlow

Current consumption

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit

TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

–40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 5 mT

25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 3 4.9 6.2 mT

100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 4.7 mT

140 °C 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 4.4 mT

170 °C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 4.1 mT

The hysteresis is the difference between the switching points BHYS = BOFF – BON

The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2

Changes to the previous edition:

–specification for 140 °C and 170 °C added

HAL566

17Micronas

0 5 10 15 20 25 30 V

VDD

BON

BOFF

HAL566

BOFF

Fig. 4–10: Typ. magnetic switching points

versus supply voltage

BON

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

BON

BOFF

HAL566

BOFF

Fig. 4–11: Typ. magnetic switching points

versus supply voltage

BON

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–50 0 50 100 150 200°C

TA, TJ

BON

BOFF

BONmax

BONtyp

BONmin

BOFFmax

BOFFtyp

BOFFmin

HAL566

Fig. 4–12: Magnetic switching points

versus temperature

VDD = 4 V

VDD = 12 V

VDD = 24 V

Note: In the diagram “Magnetic switching points versus

temperature” the curves for BONmin, BONmax,

BOFFmin, and BOFFmax refer to junction temperature,

whereas typical curves refer to ambient temperature.

HAL55x, HAL56x

18 Micronas

5. Application Notes

5.1. Application Circuit

Figure 5–1 shows a simple application with a two-wire

sensor. The current consumption can be detected by

measuring the voltage over RL. For correct functioning

of the sensor, the voltage between pin 1 and 2 (VDD)

must be a minimum of 4 V. With the maximum current

consumption of 17 mA, the maximum RL can be calcu-

lated as:

RLmax +VSUPmin *4V

17 mA

VSUP

GND

VSIG

Fig. 5–1: Application Circuit 1

For applications with disturbances on the supply line or

radiated disturbances, a series resistor RV (ranging from

10 Ω to 30 Ω) and a capacitor both placed close to the

sensor are recommended (see figure 5–2). In this case,

the maximum RL can be calculated as:

RLmax +VSUPmin *4V

17 mA *RV

GND

Fig. 5–2: Application Circuit 2

4.7 nF

VSUP

VSIG

5.2. Extended Operating Conditions

All sensors fulfill the electrical and magnetic characteris-

tics when operated within the Recommended Operating

Conditions (see page 7).

Typically, the sensors operate with supply voltages

above 3 V. However, below 4 V, the current consumption

and the magnetic characteristics may be outside the

specification.

Note: The functionality of the sensor below 4 V is not

tested on a regular base. For special test conditions,

please contact Micronas.

5.3. Start-up Behavior

Due to the active offset compensation, the sensors have

an initialization time (enable time ten(O)) after applying

the supply voltage. The parameter ten(O) is specified in

the Electrical Characteristics (see page 8). During the

initialization time, the current consumption is not defined

and can toggle between low and high.

HAL556:

After ten(O), the current consumption will be high if the

applied magnetic field B is above BON. The current con-

sumption will be low if B is below BOFF.

HAL560, HAL566:

In case of sensors with an inverted switching behavior,

the current consumption will be low if B > BOFF and high

if B < BON.

Note: For magnetic fields between BOFF and BON, the

current consumption of the HAL sensor will be either low

or high after applying VDD. In order to achieve a defined

current consumption, the applied magnetic field must be

above BON, respectively, below BOFF.

HAL55x, HAL56x

19Micronas

5.4. Ambient Temperature

Due to internal power dissipation, the temperature on

the silicon chip (junction temperature TJ) is higher than

the temperature outside the package (ambient tempera-

ture TA).

TJ = TA + ∆T

At static conditions and continuous operation, the follow-

ing equation is valid:

∆T = IDD * VDD * Rth

For all sensors, the junction temperature range TJ is

specified. The maximum ambient temperature TAmax

can be calculated as:

TAmax = TJmax – ∆T

For typical values, use the typical parameters. For worst

case calculation, use the max. parameters for IDD and

Rth, and the max. value for VDD from the application.

Due to the range of IDDhigh, self-heating can be critical.

The junction temperature can be reduced with pulsed

supply voltage. For supply times (ton) ranging from 30 µs

to 1 ms, the following equation can be used:

DT+IDD *V

DD *R

th *ton

toff )ton

5.5. EMC and ESD

For applications with disturbances on the supply line or

radiated disturbances, a series resistor and a capacitor

are recommended (see Fig. 5–2). The series resistor

and the capacitor should be placed as closely as pos-

sible to the HAL sensor.

Applications with this arrangement passed the EMC

tests according to the product standards DIN 40839.

Note: The international standard ISO 7637 is similar to

the product standard DIN 40839.

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

4.7 nF

VEMC

RV1

100 Ω

GND2

1VDD

RV2

30 Ω

Fig. 5–3: Recommended EMC test circuit

HAL55x, HAL56x

20 Micronas

6. Data Sheet History

1. Final data sheet: “HAL556, HAL560, HAL566, Two-

Wire Hall Effect Sensor Family, April 6, 1999,

6251-425-1DS. First release of the final data sheet.

2 Final data sheet: “HAL556, HAL560, HAL566, Two-

Wire Hall Effect Sensor Family, Aug. 3, 2000,

6251-425-2DS. Second release of the final data

sheet. Major changes:

–magnetic characteristics for HAL556 and HAL560

changed. Please refer to pages 12 and 14 for details.

–new temperature ranges “K” and “A” added

–temperature range “C” removed

–outline dimensions for SOT-89B: reduced toler-

ances

–SMD package SOT-89A removed

Micronas GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@micronas.com

Internet: www.micronas.com

Printed in Germany

by Systemdruck+Verlags-GmbH, Freiburg (08/2000)

Order No. 6251-425-2DS

All information and data contained in this data sheet are without any

commitment, are not to be considered as an offer for conclusion of a

contract, nor shall they be construed as to create any liability. Any new

issue of this data sheet invalidates previous issues. Product availability

and delivery are exclusively subject to our respective order confirma-

tion form; the same applies to orders based on development samples

delivered. By this publication, Micronas GmbH does not assume re-

sponsibility for patent infringements or other rights of third parties

which may result from its use.

Further, Micronas GmbH reserves the right to revise this publication

and to make changes to its content, at any time, without obligation to

notify any person or entity of such revisions or changes.

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of Micronas GmbH.