© 2012 IXYS All rights reserved 1 - 4
20121102
MIXA225RF1200TSF
IXYS reserves the right to change limits, test conditions and dimensions.
tentative
XPT IGBT Module
Features / Advantages:
• High level of integration - only one
power semiconductor module required for the
whole drive
• Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 μsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
• Thin wafer technology combined with the XPT
design results in a competitive low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Package: SimBus F
• Industry standard outline
• RoHS compliant
• Soldering pins for PCB mounting
• Height: 17 mm
• Base plate:
Copper internally DCB isolated
• Advanced power cycling
Part number
MIXA225RF1200TSF
Boost chopper + free wheeling Diodes + NTC
Applications:
• Brake for AC motor drives
• Boost chopper
• Switch reluctance drives
VCES = 1200 V
IC25 = 360 A
VCE(sat) = 1.8 V
5
6
4
12 8
10/11
3
9
DDBoost
T
© 2012 IXYS All rights reserved 2 - 4
20121102
MIXA225RF1200TSF
IXYS reserves the right to change limits, test conditions and dimensions.
tentative
IGBT TRatings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C to 125°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient gate emitter voltage
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
360
250
A
A
Ptot total power dissipation TC = 25°C 1100 W
VCE(sat) collector emitter saturation voltage IC = 225 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 9 mA; VGE = VCE TVJ = 25°C 5.4 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.3
0.3 mA
mA
IGES gate emitter leakage current VGE = ±20 V; VCE = 0 V 1.5 μA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 225 A 690 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 225 A
VGE = ±15 V; RG = 3.3 W
60
70
280
310
20
27
ns
ns
ns
ns
mJ
mJ
RBSOA
ICM
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 3.3 W
TVJ = 125°C
VCEmax = 1200 V 500 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCEmax = 1200 V
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 3.3 W; non-repetitive 900
10 μs
A
RthJC thermal resistance junction to case 0.115 K/W
RthCH thermal resistance case to heatsink 0.045 K/W
Diode DBoost
VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
265
185
A
A
VFforward voltage IF = 225 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.80
1.70
2.10 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 0.3
0.3 mA
mA
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
-diF /dt = 3300 A/μs TVJ = 125°C
IF = 225 A; VGE = 0 V
32
250
340
11.7
μC
A
ns
mJ
RthJC thermal resistance junction to case 0.145 K/W
RthCH thermal resistance case to heatsink 0.05 K/W
© 2012 IXYS All rights reserved 3 - 4
20121102
MIXA225RF1200TSF
IXYS reserves the right to change limits, test conditions and dimensions.
tentative
Package SimBus F Ratings
Symbol Definitions Conditions min. typ. max. Unit
I RMS RMS current per terminal A
Tstg storage temperature -40 125 °C
TVJM virtual junction temperature -40 150 °C
Weight 350 g
IISOL < 1 mA; 50/60 Hz 3400 V~
MD
MT
mounting torque (M5)
terminal torque (M6)
3
3
6
6
Nm
Nm
d Spp/App
d Spb/Apb
creepage distance on surface / striking distance through air
terminal to terminal 12.7 mm
terminal to backside 10.0 mm
VISOL isolation voltage t = 1 second 50/60 Hz, RMS, IISOL < 1 mA 3000 V
t = 1 minute 2500 V
Rterm-chip resistance terminal to chip V = VCEsat + 2x Rterm-chip·IC resp. V = VF + 2x R·IF0.65 mW
Part number
M = Module
I = IGBT
X = XPT
A = standard
225 = Current Rating [A]
RF = Boost / brake chopper + free wheeling diode
1200 = Reverse Voltage [V]
T = NTC
EH = E3-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA225RF1200TSF MIXA225RF1200TSF Box 3 511581
XXX XX-XXXXX YYWWx
2D Data Matrix
Logo UL Part number Date Code Location
Temperature Sensor NTC Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance
temperature coefficient
TC = 25°C
4.75 5.0
3375
5.25 kW
K
Diode DRatings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
65
45
A
A
VFforward voltage IF = 60 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
2.0
2.0
2.2 V
V
IRreverse current
*
not applicable, see Ices value of IGBT T
VR = VRRM TVJ = 25°C
TVJ = 125°C *
* mA
mA
RthJC thermal resistance junction to case 0.5 K/W
RthCH thermal resistance case to heatsink 0.2 K/W
© 2012 IXYS All rights reserved 4 - 4
20121102
MIXA225RF1200TSF
IXYS reserves the right to change limits, test conditions and dimensions.
tentative
Outlines SimBus F
1,2
17
20,5
22
50
57,5
62
94,5
110
122
137
152
0,8
R2,5
0
7,25
11,06
33,92
37,73
60,59
64,4
87,26
7,75
0
3,75
57,96
0,46
10
11
9 8 7 6 5
1 2
4
3
5
6
4
12 8
10/11
3
9
DDBoost
T
