2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package is available with a 180 degree lead orientation. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5003 and 2N5005. * Internal metallurgical bond option available. * JAN, JANTX, and JANTXV, qualification per MIL-PRF-19500/535 available. * RoHS compliant versions available (commercial grade only). Marking may vary. TO-59 (TO-210AA) Isolated Package APPLICATIONS / BENEFITS * * * * Fast switching capable - 0.5 s rise time. High frequency response. TO-59 case with Isolated terminals. Class 3B to ESD per MIL-STD-750 Method 1020. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Collector Current Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Steady-State Power Dissipation Notes: o o (1) @ T A = +25 C o (2) @ T C = +25 C Symbol Value T J and T STG R JA R JC IC (3) IC V CEO V CBO V EBO PD -65 to +200 88 3.0 5.0 10 80 100 5.5 2.0 58 o 1. Derate linearly 11.4 mW/ C for T A > +25 C. 2. Derate linearly 331 mW/oC for T C > +25oC. 3. This value applies for PW < 8.3 ms, duty cycle < 1%. Unit o C C/W o C/W A o V V V W MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0237, Rev. 1 (111961) (c)2011 Microsemi Corporation Page 1 of 6 2N5003 and 2N5005 MECHANICAL and PACKAGING * * * * * CASE: Nickel Plated. TERMINALS: Solder Dip over Nickel Plating. RoHS compliant Matte/Tin available on commercial grade only. MARKING: Manufacturer's ID, Date Code, Part Number, BeO. POLARITY: See Package Outline Drawing on last page. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N5003 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CES I EBO h FE V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector emitter cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0237, Rev. 1 (111961) (c)2011 Microsemi Corporation Page 2 of 6 2N5003 and 2N5005 o ELECTRICAL CHARACTERISTICS @ T C = 25 C unless otherwise noted. Characteristic Symbol Min. V(BR)CEO 80 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mA Collector-Emitter Cutoff Current VCE = 40 V, IB = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 V, IC = 0 VBE = 5.5 V, IC = 0 V I CEO 50 A I CES 1.0 1.0 A mA I EBO 1.0 1.0 A mA ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 50 mA, VCE = 5.0 V IC = 2.5 A, VCE = 5.0 V IC = 5.0 A, VCE = 5.0 V 2N5003 IC = 50 mA, VCE = 5.0 V IC = 2.5 A, VCE = 5.0 V IC = 5.0 A, VCE = 5.0 V Base-Emitter Voltage Non-saturated VCE = 5.0 V, IC =2.5 A Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA hFE 2N5005 20 30 20 90 50 70 40 200 VBE 1.45 V VCE(sat) 0.75 1.5 V VBE(sat) 1.45 2.2 V DYNAMIC CHARACTERISTICS Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100 mA, VCE = 5.0 V, f = 1 kHz 2N5003 2N5005 Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 2N5003 IC = 500 mA, VCE = 5.0 V, f = 10 MHz 2N5005 Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz hfe 20 50 |hfe| 6.0 7.0 pF Cobo 250 t on 0.5 s ts tf 1.4 0.5 s s t off 1.5 s SWITCHING CHARACTERISTICS Turn-On Time IC = 5 A; IB1= 500 mA Storage Time IB2= -500 mA Fall Time VBE(OFF) = 3.7 V Turn-Off Time RL = 6 Ohms T4-LDS-0237, Rev. 1 (111961) (c)2011 Microsemi Corporation Page 3 of 6 2N5003 and 2N5005 o ELECTRICAL CHARACTERISTICS @ T C = 25 C unless otherwise noted. (continued) SAFE OPERATING AREA (See Figure below and MIL-STD-750,Test Method 3053) IC - COLLECTOR CURRENT - A DC Tests TC = +250C, VCE = 0, tP = 1 second 1 Cycle Test 1 VCE = 12 V, IC = 5 A Test 2 VCE = 32 V, IC = 1.7 A Test 3 VCE = 80 V, IC = 100 mA V CE - COLLECTOR - EMITTER VOLTAGE - V Maximum safe operating area T4-LDS-0237, Rev. 1 (111961) (c)2011 Microsemi Corporation Page 4 of 6 2N5003 and 2N5005 MAXIMUM DC OPERATION RATING (W) GRAPHS o T C - CASE TEMPERATURE ( C) MAXIMUM DC OPERATION RATING (W) FIGURE 1 Temperature-Power Derating TIME (s) FIGURE 2 Thermal Impedance T4-LDS-0237, Rev. 1 (111961) (c)2011 Microsemi Corporation Page 5 of 6 2N5003 and 2N5005 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. See NSB Handbook H28, "Screw-Thread Standards for Federal Services". 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of the stud. 7. Terminal spacing measured at the base seat only. 8. This dimension applies to the location of the center line of the terminals. 9. Terminal - 1, emitter; terminal - 2, base; terminal - 3, collector. Collector lead is isolated from the case. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0237, Rev. 1 (111961) Dimension Symbol A1 CD CD1 CH HF HT OAH PS PS1 SL SU T UD (c)2011 Microsemi Corporation Inches Min Max .250 .330 .360 .370 .437 .320 .468 .424 .437 .090 .150 .575 .763 .185 .215 .090 .110 .400 .455 .078 .040 .065 .155 .189 Millimeters Min Max 6.35 8.38 9.14 9.40 11.10 8.13 11.89 10.77 11.10 2.29 3.81 14.61 19.38 4.70 5.46 2.29 2.79 10.16 11.56 1.98 1.02 1.65 3.94 4.80 Notes 5 4, 8 4, 8 7 Page 6 of 6