T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 1 of 6
2N5003 and 2N5005
Availa ble on
commercial
versions
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/535
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.
This TO-59 isolated package is available with a 180 degree lead orientation. Microsemi also
offers numerous other products to meet higher and lower power voltage regulation
applications.
Marking may vary.
TO-59 (TO-210AA)
Isolated Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5003 an d 2N5005.
• Interna l meta llurg ic al bond opti on avail abl e.
• JAN, JANTX, and J A NTXV, qualification per M IL-PRF-19500/535 available.
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Fast switching capable - 0.5 µs rise time.
• High frequency response.
• TO-59 case with Isolated terminals.
• Class 3B to ESD per MIL-STD-750 Method 1020.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resi stan ce Jun cti on-to-Ambient
RӨJA
88
oC/W
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
3.0
oC/W
Collector Current IC
IC
(3)
5.0
10
A
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
100
V
Emitter-Base Voltage
VEBO
5.5
V
Steady-State Power Dissipation @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PD 2.0
58
W
Notes: 1. Derate linearl y 11.4 mW/oC for TA > +25oC.
2. Derate linearly 331 mW/oC for TC > +25oC.
3. This value applies for PW < 8.3 ms, duty cycle < 1%.
T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 2 of 6
2N5003 and 2N5005
• CASE: Nickel Plated.
• TERMINALS: Solder Dip over Nickel Plating. RoHS compliant Matte/Tin available on com merc ial grad e only .
• MARKING: Manufacturer’s ID, Date Code, Part Number, BeO.
• POLARITY: See Package Outline Drawing on last page.
• See Package Dimensions on last page.
JAN 2N5003 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICES
Collector emitter cutoff current, circuit between base and emitter.
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 3 of 6
2N5003 and 2N5005
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mA
V(BR)CEO
80
V
Collector-Emitter Cutoff Current
VCE = 40 V, IB = 0
I
CEO
50
µA
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0
VCE = 100 V, VBE = 0
I
CES
1.0
1.0
µA
mA
Emitter-Base Cutoff Current
VBE = 4.0 V, IC = 0
VBE = 5.5 V, IC = 0
I
EBO
1.0
1.0
µA
mA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5.0 V 2N5003
IC = 2.5 A, VCE = 5.0 V
IC = 5.0 A, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V 2N5005
IC = 2.5 A, VCE = 5.0 V
I
C
= 5.0 A, V
CE
= 5.0 V
h
FE
20
30
20
50
70
40
90
200
Base-Emitter Voltage Non-saturated
VCE = 5.0 V, IC =2.5 A
V
BE
1.45
V
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
VCE(sat)
0.75
1.5
V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
VBE(sat)
1.45
2.2
V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio 2N5003
IC = 100 mA, VCE = 5.0 V, f = 1 kHz 2N5005
h
fe
20
50
Magn itude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio 2N5003
IC = 500 mA, VCE = 5.0 V, f = 10 MHz 2N5005
|h
fe
|
6.0
7.0
Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
C
obo
250
pF
SWITCHING CHARACTERISTICS
Turn-On Time
I
C
= 5 A; I
B1
= 500 mA
t
on
0.5
µ
s
Storage Time
I
B2
= -500 mA
VBE(OFF) = 3.7 V
ts
1.4
µs
Fall Time
tf
0.5
µs
Turn-Off Time
RL = 6 Ohms
toff
1.5
µs
T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 4 of 6
2N5003 and 2N5005
SAFE OPERATING AREA (See Figure below and MIL-STD-750,Test Method 3053)
DC Tests
TC = +250C, VCE = 0, tP = 1 second 1 Cycle
Test 1
VCE = 12 V, IC = 5 A
Test 2
VCE = 32 V, IC = 1.7 A
Test 3
VCE = 80 V, IC = 100 mA
VCE- COLLECTOR – EMITTER VOLT AGE – V
Maximum safe operating area
IC – COLLECTOR CURRENT – A
T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 5 of 6
2N5003 and 2N5005
TC – CASE TEMPERATURE (oC)
FIGURE 1
Temperature-Power Derating
TIME (s)
FIGURE 2
Thermal Impedance
MAXIMUM DC OPERATION RATING (W)
MAXIMUM DC OPERATION RATING (W)
T4-LDS-0237, Rev. 1 (111961) ©2011 Microsemi Corporation Page 6 of 6
2N5003 and 2N5005
NOTES:
1. Dim ensions are i n inches.
2. Mi llim eters ar e given for general information only.
3. See NSB Handbook H28, “Screw-Thread Standards f or Federal
Services”.
4. The orientat ion of the ter minals in relation t o the hex flats is not
controlled.
5. All three term inals .
6. The c ase temperatur e may be m easured anywhere on the seat ing plan e
within .125 inch (3. 18 mm) of the stud.
7. Terminal spaci ng measur ed at the bas e seat only.
8. This dimension appl ies t o the location of the c enter l ine of t he terminals.
9. Terminal - 1, emitter; ter m inal - 2, base; term inal - 3, coll ector. Collect or
lead is isolated f rom the case.
10. In accor dance with ASME Y14. 5M , diameters are equivalent to Φx
symbology.
Symbol
Dimension
Notes
Inches
Millimeters
Min
Max
Min
Max
A1
.250
6.35
CD
.330
.360
8.38
9.14
CD1
.370
.437
9.40
11.10
CH
.320
.468
8.13
11.89
HF
.424
.437
10.77
11.10
HT
.090
.150
2.29
3.81
OAH
.575
.763
14.61
19.38
5
PS
.185
.215
4.70
5.46
4, 8
PS1
.090
.110
2.29
2.79
4, 8
SL
.400
.455
10.16
11.56
SU
.078
1.98
7
T
.040
.065
1.02
1.65
UD
.155
.189
3.94
4.80