D2220UK
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2685
Issue 1
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
17.5W
40V
±20V
4A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
BC
A
E
FG
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm Tol. Inches Tol.
4.06 ±0.08 0.160 ±0.003
5.08 ±0.08 0.200 ±0.003
1.27 ±0.08 0.050 ±0.003
0.51 ±0.08 0.020 ±0.003
3.56 ±0.08 0.140 ±0.003
4.06 ±0.08 0.160 ±0.003
1.65 ±0.08 0.065 ±0.003
+0.25 +0.010
0.76 0.030
-0.00 -0.000
0.51 Min. 0.020 Min.
1.02 Max. 0.040 Max.
45°Max. 45°Max.
0°Min. 0°Min.
7°Max. 7°Max.
0.20 ±0.08 0.008 ±0.003
2.18 Max. 0.086 Max.
4.57 ±0.08 0.180 ±0.003
METAL GATE RF SILICON FET
TetraFET
ROHS COMPLIANT
D2220UK
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2685
Issue 1
Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 0 ID= 10mA
VDS = 12.5V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 0.4A
PO= 5W
VDS = 12.5V IDQ = 0.2A
f = 1GHz
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
40
2
1
0.5 7
0.36
10
40
20:1 24
20
2
RTHj–case Thermal Resistance Junction – Case Max. 6°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300
m
s , Duty Cycle
£
2%
