TetraFET D2220UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V - 1GHz SINGLE ENDED K FEATURES M L J E F * SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 - SOURCE PIN 2 - DRAIN PIN 3 - DRAIN PIN 4 - SOURCE Dim. A B C D E F G mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 H 0.76 J K L M N P * SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 - SOURCE PIN 6 - GATE PIN 7 - GATE PIN 8 - SOURCE 0.51 1.02 45 0 7 0.20 2.18 4.57 Tol. 0.08 0.08 0.08 0.08 0.08 0.08 0.08 +0.25 -0.00 Min. Max. Max. Min. Max. 0.08 Max. 0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45 0 7 0.008 0.086 0.180 Tol. 0.003 0.003 0.003 0.003 0.003 0.003 0.003 +0.010 -0.000 Min. Max. Max. Min. Max. 0.003 Max. 0.003 * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 40V 20V 4A -65 to 150C 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 2685 Issue 1 D2220UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Drain-Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 2 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 0.4A 0.36 S GPS Common Source Power Gain PO = 5W 10 dB Drain Efficiency VDS = 12.5V 40 % 20:1 -- BVDSS IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 0.2A f = 1GHz Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = -5V f = 1MHz 40 V 24 pF f = 1MHz 20 pF f = 1MHz 2 pF Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 6C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 2685 Issue 1