Green Environment
Green Products for
a Greener Tomorrow
DRAM and NAND Flash memories are focus products
CMOS Image Sensors will diversify Hynix product portfolio
2009 Revenues of USD $6.2B
Market capitalization of USD $12B as of July 2010
Global presence with 3 manufacturing sites and 30 sales offices worldwide
17,302 employees worldwide
The simply designed symbolic mark of superposition of two circles implies Hynix's will to
develop environment-friendly products.
The image of a sprout and green wings representing reborn nature symbolizes Hynix's
volitional environmental management initiative. The 'Eco-mark' conveys our passions to
contribute to customers and society with ecological practices (Environment Consciousness
Outreach), and environmental awareness of each employee (Environment Creates Ourselves).
Corporate Profile
Hynix Semiconductor is a leading supplier of advanced semiconductor
memory solutions and Image sensor products. We design, develop,
manufacture and market a wide variety of DRAM and NAND Flash memories
and CMOS Image Sensors (CIS). These memory components are essential in
today’s leading-edge computing, consumer and wireless communications
applications. Image Sensors are used in a wide range of portable consumer
electronics products such as handsets and handheld games.
Green Products for a Greener Tomorrow
Recent
Accomplishments
2010
07 Developed 44nm 2Gb DDR3 1866Mbps
06 Developed 44nm DDR3 operating at 1.25V
04 Developed DDR3 16GB LRDIMM
03 Developed industry’s first stack based on ‘Wafer Level Package’ technology
02 Developed 26nm 64Gb NAND Flash memory
01 Developed the world’s first 2Gb Mobile Low Power DDR2 DRAM
2009
12 Introduced the world's first 44nm 2Gb GDDR5 DRAM
11 Acquired Intel validation for 44nm 2Gb DDR3 Products
10 Introduced second generation 1Gb DDR3
08 Introduced 4Gb Mobile DDR SDRAM supported on Intel’s Moorestown platform
04 Developed the world’s first Low Power-High speed Mobile 1Gb DDR2 DRAM
03 Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation
02 Developed the world’s first 44nm DDR3 DRAM
01 Acquired Intel validation for the world’s first ultra-high speed DDR3 based
4GB ECC UDIMM for servers
2008
12 Developed the world’s first 2Gb Mobile DRAM
11 Introduced Industry's fastest 7Gbps, 1Gb GDDR5 Graphics DRAM
04 Developed the world's fastest Mobile LPDDR2
02 Introduced 2-Rank 8GB DDR2 RDIMM
01 Announced 800MHz, 1GB/2GB UDIMM Validation
2007
11 Acquired Intel validation for 1Gb DDR2 DRAM
Developed industry's first 1Gb GDDR5 DRAM
09 Developed the world's first NAND Flash MCP with 24 stacked chips
08 Developed industry's fastest and smallest 1Gb Mobile DRAM
05 Acquired the industry's first validation on DDR3 DRAMs from Intel
03 Developed the world's fastest ECC Mobile DRAM
01
Developed the fastest memory module based on 'Wafer Level Package' technology
2006
12 Announced industry's first 60nm 1Gb DDR2 800MHz based modules
Developed the world's fastest 200MHz 512Mb mobile DRAM
09 Launched 300mm research fab line
03 Acquired the industry's first validation on 80nm 512Mb DDR2 DRAMs from Intel
01 Announced joint development plan of DOC H3 (new generation DiskOnChip
embedded flash drive) with M-Systems
2005
12 Developed the world's first 512Mb GDDR4, the industry's fastest and highest
density graphics DRAM
11 Launched the industry's first JEDEC standard 8GB DDR2 R-DIMM
04
Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu Province, China
2004
03 Developed the industry's first ultra-high speed DDR 550MHz
Acquired 1Gb DDR2 validation from Intel
02 Developed NAND Flash memory
2003
08 Developed the world's first DRAM 1Gb DDR2
07 Developed the world's first ultra-high speed DDR500
06 Acquired the industry's first Intel validation for 512Mb DDR400
05 Launched production on 0.10-micron process technology
Launched volume production of ultra-low power 256Mb SDRAM
04 Signed agreement with STMicroelectronics to cooperate in NAND Flash
memory development
03 Introduced the world's first commercially applicable mega-level FeRAM
2002
10 Developed 0.10-micron 512MB DDR
08 Developed the world's first high-density, wide-bandwidth 256MB DDR
06 Developed the world's first 256MB SDR for high-end consumer
application
03 Developed 1G DDR DRAM module
2001
12 Developed the world's first 128Mb DDR for graphics
08 Completed spin-off from Hyundai Group
03 Changed the Company name to "Hynix Semiconductor Inc."
1999
10 Merged with LG Semicon., Ltd.
1983
02 Founded Hyundai Electronics Industries Co., Ltd.
DDR2
VS.
DDR3
Key Features of High Speed Interface
DDR3
VS.
DDR3L
Power Comparison (Watt)
Items DDR2 DDR3 / DDR3L
Data Rate 400, 533, 667, 800Mbps 800,1066,1333,1600Mbps
VDD / VDDQ 1.8V +0.1V / -0.1V 1.5V 0.075V (DDR3)
1.35V 0.1V / -0.067V (DDR3L)
Support Density 256Mb ~ 4Gb 1Gb ~ 4Gb
Bank 512Mb : 4 Bank 8 Bank
1Gb : 8 Bank
Data Pre-fetch 4 bit 8 bit
Package Type 60 FBGA for x4 / x8 78 FBGA for x4 / x8
84 FBGA for x16 96 FBGA for x16
Interface SSTL-18 SSTL -15
DQS Signaling Single / Differential Differential Only
Driver Calibration Off-Chip Driver Calibration Self Calibration with ZQ pin
DQS-CLK De-Skewing (Write Leveling)
On Die Termination / Dynamic ODT
Reset pin (Soft power-up)
Main
Memory
DDR3
General Description
The mainstream, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 SDRAM’s. DDR3 SDRAM boasts
high performance and low power consumption. It supports data transfer rate of up to 1.6Gb/s and operates at a lower power supply
voltage of 1.5V, compared to DDR2. The DDR3 SDRAM is eco-friendly for it can operate at even lower power supply voltage of
1.35V contributing to lower power dissipation and extended battery life in mobile systems. The low-power operation of DDR3L,
1.35V DDR3 SDRAM, is also beneficial in high-density memory systems in power constrained applications such as servers and data
centers. Using Hynix low-power memory modules can help customers reduce power consumption and utility expenditures, improve
reliability and reduce carbon emissions. Hynix plans to offer DDR3 in densities of 1Gb to 4Gb, and is currently in volume production
on 2Gb DDR3. Hynix’s DDR3 modules exploit functions such as ZQ calibration, fly-by topology, dynamic on-die-termination, and
levelization to ensure better signal integrity which guarantees higher performance.
4
Main
Memory
A crossover to mobile computers from the traditional desktop
has already occurred. Declining prices is the primary driving
factor, especially in light of current global economic conditions.
Mobility and weight are other features that make mobile
computers attractive to consumers, in addition to the computing
power that now rivals desktops
The technology leap from DDR2 to DDR3 doubles system
performance. As DDR3 offers superior performance and power
savings, notebooks are rapidly adopting DDR3 memory.
With rapid transition trend to DDR3, processor makers are also
supporting DDR3 platforms at speeds of up to 1600Mbps.
Hynix estimates DDR3 1333Mbps segment in notebooks will be
around 70% by the second half of 2010.
SODIMM
PC & Server
Memory
General Description
There is a lot of concern about protecting the environment and it is quickly becoming one of the top priorities. Highly virtualized
applications such as data centers, servers and supercomputers, could take advantage of the low power features of the DDR3
SDRAM to enable cooler, power efficient systems.
Hynix is responding to the industry demand for eco-friendly or 'green' products that reduce power consumption, utility expenditures,
improve reliability and reduce carbon emissions. The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than
legacy or competing solutions. The 1.35V(DDR3L) product will yield an additional 20% power savings. It will be an attractive solution
for applications requiring compliance to energy star specifications. This product would also be ideal in mobile applications, such as
notebooks, where it markedly extends battery life.
The new design philosophy adopted on the second generation 1Gb DDR3, will also be applied to future high density DRAM
components from Hynix. The new 44nm process along with Hynix’s design optimization and internal signaling innovations, reduces
power consumption and enhances performance. Devices operating at 1.5V and 1.35V(Low Voltage) exhibit similar bandwidth
characteristics. The demand for low power consumption in both mobile system like notebooks and server systems such as
datacenters, is the emerging trend.
Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with technology
advancements such as this 40nm class product.
Transition to Notebook Form Factor Speed Transition in Notebook
Density 4GB SODIMM
Organization 512Mx64
Speed 1600Mbps
Number of Rank 2 Ranks
RDIMM
Density 16GB RDIMM
Organization 2Gx72
Speed 1333Mbps
Number of Rank 4 Ranks
5
DDR3 SDRAM MODULE (240pin-UDIMM)
1600-11-11-11 HMT351U6BFR8C-PB FBGA (82ball) 2 30mm Now
512Mx64 256Mx8 HMT351U6CFR8C-PB FBGA (78ball) 2 30mm Q1 '11
1333-9-9-9 HMT351U6BFR8C-H9 FBGA (82ball) 2 30mm Now
4GB HMT351U6CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11
1600-11-11-11 HMT351U7CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11
512Mx72 256Mx8 1333-9-9-9 HMT351U7BFR8C-H9 FBGA (82ball) 2 30mm Now
HMT351U7CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11
1600-11-11-11 HMT125U6DFR8C-PB FBGA (78ball) 2 30mm Now
1.5V 128Mx8 1333-9-9-9 HMT125U6TFR8C-H9 FBGA (78ball) 2 30mm Now
256Mx64 HMT125U6DFR8C-H9 FBGA (78ball) 2 30mm Now
2GB 256Mx8 1333-9-9-9 HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now
HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now
256Mx72 128Mx8 1333-9-9-9 HMT125U7TFR8C-H9 FBGA (78ball) 2 30mm Now
1333-9-9-9 HMT325U7BFR8C-H9 FBGA (82ball) 1 30mm Now
1600-11-11-11 HMT112U6DFR8C-PB FBGA (78ball) 1 30mm Now
1GB 128Mx64 128Mx8 1333-9-9-9 HMT112U6TFR8C-H9 FBGA (78ball) 1 30mm Now
HMT112U6DFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx72 128Mx8 1333-9-9-9 HMT112U7TFR8C-H9 FBGA (78ball) 1 30mm Now
1600-11-11-11 HMT351U7CFR8A-PB FBGA (78ball) 2 30mm Q1 '11
4GB 512Mx72 256Mx8 1333-9-9-9 HMT351U7BFR8A-H9 FBGA (82ball) 2 30mm Now
1.35V HMT351U7CFR8A-H9 FBGA (78ball) 2 30mm Q1 '11
2GB 256Mx72 256Mx8 1333-9-9-9 HMT325U7BFR8A-H9 FBGA (82ball) 1 30mm Now
128Mx8 1333-9-9-9 HMT125U7TFR8A-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-9-9-9 HMT112U7TFR8A-H9 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
Main Memory
Product Line-up
DDR3 SDRAM MODULE (240pin-RDIMM)
16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GR7BMR4C-H9 FBGA (82ball) 4 30mm Now
1600-11-11-11 HMT31GR7BFR4C-PB FBGA (82ball) 2 30mm Now
512Mx4 HMT31GR7CFR4C-PB FBGA (78ball) 2 30mm Q1 '11
8GB 1Gx72 1333-9-9-9 HMT31GR7BFR4C-H9 FBGA (82ball) 2 30mm Now
HMT31GR7CFR4C-H9 FBGA (78ball) 2 30mm Q1 '11
256Mx8 1333-9-9-9 HMT31GR7BFR8C-H9 FBGA (82ball) 4 30mm Now
HMT31GR7CFR8C-H9 FBGA (78ball) 4 30mm Q1 '11
256Mx8 1600-11-11-11 HMT351R7BFR8C-PB FBGA (82ball) 2 30mm Now
1.5V 1333-9-9-9 HMT351R7BFR8C-H9 FBGA (82ball) 2 30mm Now
4GB 512Mx72 512Mx4 1600-11-11-11 HMT351R7BFR4C-PB FBGA (82ball) 1 30mm Now
1333-9-9-9 HMT351R7BFR4C-H9 FBGA (82ball) 1 30mm Now
256Mx4 1333-9-9-9 HMT151R7TFR4C-H9 FBGA (78ball) 2 30mm Now
256Mx8 1600-11-11-11 HMT325R7BFR8C-PB FBGA (82ball) 1 30mm Now
2GB 256Mx72 1333-9-9-9 HMT325R7BFR8C-H9 FBGA (82ball) 1 30mm Now
256Mx4 1333-9-9-9 HMT125R7TFR4C-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-9-9-9 HMT125R7TFR8C-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-9-9-9 HMT112R7TFR8C-H9 FBGA (78ball) 1 30mm Now
16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GR7BMR4A-H9 FBGA (82ball) 4 30mm Now
1600-11-11-11 HMT31GR7CFR4A-PB FBGA (78ball) 2 30mm Q1 '11
512Mx4 1333-9-9-9 HMT31GR7BFR4A-H9 FBGA (82ball) 2 30mm Now
8GB 1Gx72 HMT31GR7CFR4A-H9 FBGA (78ball) 2 30mm Q1 '11
256Mx8 1333-9-9-9 HMT31GR7BFR8A-H9 FBGA (82ball) 4 30mm Now
HMT31GR7CFR8A-H9 FBGA (78ball) 4 30mm Q1 '11
1.35V 512Mx4 1333-9-9-9 HMT351R7BFR4A-H9 FBGA (82ball) 2 30mm Now
4GB 512Mx72 1333-9-9-9 HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now
128Mx8 1066-7-7-7 HMT151R7TFR8A-G7 FBGA (78ball) 4 30mm Now
256Mx4 1333-9-9-9 HMT151R7TFR4A-H9 FBGA (78ball) 2 30mm Now
256Mx8 1333-9-9-9 HMT325R7BFR8A-H9 FBGA (82ball) 1 30mm Now
2GB 256Mx72 256Mx4 1333-9-9-9 HMT125R7TFR4A-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-9-9-9 HMT125R7TFR8A-H9 FBGA (78ball) 1 30mm Now
1GB 128Mx72 128Mx8 1333-9-9-9 HMT112R7TFR8A-H9 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
6
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Main Memory
Product Line-up
DDR3 SDRAM MODULE (240pin-VLP RDIMM)
1Gx4 (DDP) 1600-11-11-11 HMT41GV7BMR4C-PB FBGA (82ball) 2 18.75mm Now
8GB 1Gx72 1333-9-9-9 HMT41GV7BMR4C-H9 FBGA (82ball) 2 18.75mm Now
512Mx8 (DDP) 1333-9-9-9 HMT41GV7BMR8C-H9 FBGA (82ball) 4 18.75mm Now
512Mx4 (DDP) 1333-9-9-9 HMT351V7BMR4C-H9 FBGA (78ball) 2 18.75mm Now
4GB 512Mx72 256Mx8 1600-11-11-11 HMT351V7BFR8C-PB FBGA (82ball) 2 18.75mm Now
1.5V 1333-9-9-9 HMT351V7BFR8C-H9 FBGA (82ball) 2 18.75mm Now
256Mx4 1333-9-9-9 HMT125V7TFR4C-H9 FBGA (78ball) 1 18.75mm Now
2GB 256Mx72 128Mx8 1333-9-9-9 HMT125V7TFR8C-H9 FBGA (78ball) 2 18.75mm Now
256Mx8 1600-11-11-11 HMT325V7BFR8C-PB FBGA (82ball) 1 18.75mm Now
1333-9-9-9 HMT325V7BFR8C-H9 FBGA (82ball) 1 18.75mm Now
1GB 128Mx72 128Mx8 1333-9-9-9 HMT112V7TFR8C-H9 FBGA (78ball) 1 18.75mm Now
8GB 1Gx72 1Gx4 (DDP) 1333-9-9-9 HMT41GV7BMR4A-H9 FBGA (82ball) 2 18.75mm Now
512Mx8 (DDP) 1333-9-9-9 HMT41GV7BMR8A-H9 FBGA (82ball) 4 18.75mm Now
4GB 512Mx72 512Mx4 (DDP) 1333-9-9-9 HMT351V7BMR4A-H9 FBGA (78ball) 2 18.75mm Now
1.35V 1333-9-9-9 HMT351V7BFR8A-H9 FBGA (82ball) 2 18.75mm Now
256Mx4 1333-9-9-9 HMT125V7TFR4A-H9 FBGA (78ball) 1 18.75mm Now
2GB 256Mx72 128Mx8 1333-9-9-9 HMT125V7TFR8A-H9 FBGA (78ball) 2 18.75mm Now
1333-9-9-9 HMT325V7BFR8A-H9 FBGA (82ball) 1 18.75mm Now
1GB 128Mx72 128Mx8 1333-9-9-9 HMT112V7TFR8A-H9 FBGA (78ball) 1 18.75mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR3 SDRAM MODULE (204pin-SODIMM)
1600-11-11-11 HMT351S6BFR8C-PB FBGA (82ball) 2 30mm Now
4GB 512Mx64 256Mx8 HMT351S6CFR8C-PB FBGA (78ball) 2 30mm Q1 '11
1333-9-9-9 HMT351S6BFR8C-H9 FBGA (82ball) 2 30mm Now
HMT351S6CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11
128Mx8 1600-11-11-11 HMT125S6DFR8C-H9 FBGA (78ball) 2 30mm Now
1.5V HMT125S6DFR8C-H9 FBGA (78ball) 2 30mm Now
2GB 256Mx64 256Mx8 1600-11-11-11 HMT325S6BFR8C-PB FBGA (82ball) 1 30mm Now
1333-9-9-9 HMT325S6BFR8C-H9 FBGA (82ball) 1 30mm Now
128Mx16 1333-9-9-9 HMT325S6BFR6C-H9 FBGA (96ball) 2 30mm Now
128Mx8 1600-11-11-11 HMT112S6DFR8C-PB FBGA (78ball) 1 30mm Now
1GB 128Mx64 HMT112S6DFR8C-H9 FBGA (78ball) 1 30mm Now
64Mx16 1333-9-9-9 HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now
1.35V 4GB 512Mx64 256Mx8 1333-9-9-9 HMT351S6AFR8A-H9 FBGA (82ball) 2 30mm Now
2GB 256Mx64 256Mx8 1333-9-9-9 HMT325S6AFR8A-H9 FBGA (82ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR3 SDRAM MODULE (240pin-LRDIMM)
1.5V 16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GL7BMR4C-H9 FBGA (82ball) 4 30.35mm Q4 '10
1Gx4 (DDP) 1600-11-11-11 HMT42GL7BMR4C-PB FBGA (82ball) 4 30.35mm Q1 '11
1.35V 16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GL7BMR4A-H9 FBGA (82ball) 4 30.35mm Q4 '10
1Gx4 (DDP) 1600-11-11-11 HMT42GL7BMR4A-PB FBGA (82ball) 4 30.35mm Q1 '11
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
7
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Graphics
Memory
General Description
Since the world’s first Graphics DDR SDRAM was introduced in 1999, Hynix has played a leadership role in the Graphics memory
market by offering cost effective and high performance products.
Hynix’s newly introduced 44nm 2Gb GDDR5 offers designers 7Gbps speed (bandwidth of 28GB/sec with 32-bit I/O) required for
high end graphics.
In addition to improved speed and higher density, the power consumption on the 2Gb GDDR5 is significantly reduced since it can
operate on 1.35V power supply. This results in an estimated 20% reduction in power consumption compared to the 1.5V products,
meeting Hynix’s goal of developing eco-friendly products.
The 2Gb GDDR5 will meet the needs of high-end desktop and notebook graphics applications. It will also be suitable in super
computers designed with a General Purpose GPU architecture, where the 2Gb GDDR5 will serve as high bandwidth memory to the
GPU.
Hynix has maintained its leadership in graphics memory with the world’s first 66nm 1Gb GDDR5 in 2007 followed by the 54nm 1Gb
GDDR5 in 2008, and 44nm 2Gb GDDR5 in early 2010.
Hynix also supports GDDR3, DDR3 and DDR2 products for performance and mainstream market. Hynix will provide more value to
customers with higher performance, quality and technology leadership products.
44nm 2Gb GDDR5 Features
Graphics Product Features Comparison
Graphics Applications
Items Features
Op. Frequency Max 7.0Gbps
Power Supply VDD(Q) = 1.5V & 1.35V
I / O x32 / x16
Package 170ball FBGA (12mmx14mm)
Banks / Prefetch 16Banks / 8bit
Interface POD_15
Items DDR2 DDR3 GDDR3 GDDR5
VDD(Q) 1.8V 1.5V 1.8V 1.35V / 1.5V
Speed Max 600MHz Max 1.0GHz Max 1.3GHz Max 7.0Gbps
Burst length 4 / 8 4 / 8 4 / 8 8 only
Package 84ball FBGA 96ball FBGA 136ball FBGA 170ball FBGA
Density 512Mb / 1Gb 1Gb / 2Gb 512Mb / 1Gb 1Gb / 2Gb
I / O x16 x16 x32 x32 / x16
Banks 4(512Mb) / 8(1Gb) 8 8 16
BST No No Yes Yes
(Boundary Scan Test)
8
DDR2 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
500MHz (2.0ns) H5PS1G63EFR-20L FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
1Gb 64Mx16 400MHz (2.5ns) H5PS1G63EFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
400MHz (2.5ns) HY5PS1G1631CFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
600MHz (1.6ns) H5PS5162FFR-16C FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10
500MHz (2.0ns) H5PS5162FFR-20C FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10
500MHz (2.0ns) H5PS5162FFR-20L FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10
400MHz (2.5ns) H5PS5162FFR-25C FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10
512Mb 32Mx16 500MHz (2.0ns) HY5PS121621CFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10
450MHz (2.2ns) HY5PS121621CFP-22 FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10
400MHz (2.5ns) HY5PS121621CFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10
350MHz (2.8ns) HY5PS121621CFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10
300MHz (3.3ns) HY5PS121621CFP-33 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10
DDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
1,000MHz (1.0ns) H5TQ2G63BFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
2Gb 128Mx16 900MHz (1.1ns) H5TQ2G63BFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
800MHz (1.2ns) H5TQ2G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1,000MHz (1.0ns) H5TQ1G63DFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10
900MHz (1.1ns) H5TQ1G63DFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10
1Gb 64Mx16 800MHz (1.2ns) H5TQ1G63DFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10
800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
700MHz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
GDDR5 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
6.0Gbps H5GQ2H24MFR-R0C FBGA (170ball) 16Bank, 1.6V / 1.6V Now
2Gb 64Mx32 5.0Gbps 16Bank, 1.5V / 1.5V
3.6Gbps 16Bank, 1.35V / 1.35V
4.0Gbps H5GQ2H24MFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, TBD Now
5.5Gbps H5GQ1H24AFR-T3C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
1Gb 32Mx32 5.0Gbps 16Bank, 1.5V / 1.5V
3.2Gbps 16Bank, 1.35V / 1.35V
4.5Gbps H5GQ1H24AFR-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
GDDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
1,300MHz (0.77ns) H5RS1H23MFR-N3C FBGA (136ball) 8banks, 1.9V / 1.9V Now
1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8banks, 1.9V / 1.9V Now
1Gb 32Mx32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8banks, 1.8V / 1.8V Now
900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8banks, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8banks, 1.8V / 1.8V Now
1,300MHz (0.77ns) H5RS5223DFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,200MHz (0.8ns) H5RS5223DFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,000MHz (1.0ns) H5RS5223DFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
900MHz (1.1ns) H5RS5223DFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223DFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
500MHz (2.0ns) H5RS5223DFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
512Mb 16Mx32 1,300MHz (0.77ns) H5RS5223CFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10
1,200MHz (0.8ns) H5RS5223CFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10
1,000MHz (1.0ns) H5RS5223CFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10
900MHz (1.1ns) H5RS5223CFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
700MHz (1.4ns) H5RS5223CFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
500MHz (2.0ns) H5RS5223CFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10
700MHz (1.4ns) H5RS5223CFR-14L FBGA (136ball) 8Bank, 1.5V / 1.5V EOL : Oct. '10
550MHz (1.8ns) H5RS5223CFR-18C FBGA (136ball) 8Bank, 1.5V / 1.5V EOL : Oct. '10
Graphics Memory
Product Line-up
9
H5GQ2H24MFR-T2C FBGA (170ball) Now
FBGA (170ball) Now
H5GQ1H24AFR-T2L
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Consumer
Memory
General Description
We now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while car navigation systems
provide comfort and convenience. All of these digital consumer appliances need semiconductor memory for performance
improvement, power savings and size reduction. Hynix has full line-up of DRAM (Dynamic RAM) to meet the needs of a wide range
of consumer applications. Hynix offers a family of SDRAM (Synchronous DRAM) in 128Mb~256Mb densities, packaged in TSOP-II
and FBGA offered at industrial temperature range of -40 to 85 and featuring very low power consumption. DDR, DDR2 and
DDR3 SDRAMs (Double Data Rate 3 SDRAMs) are available for high-end consumer applications requiring higher data transfer
rates. In many applications, such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3
SDRAM technologies.
Sometimes, the most important things are not be visible. Although hidden from view, Hynix Consumer memories have been used in
a variety of applications offered by a number of companies to realize a multitude of miracles.
Consumer DRAM Readiness
Consumer DRAM Usage Map
10
x16 HY57V281620FTP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now
128Mb x16 HY5V26FFP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now
x16 H57V1262GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now
x16 H57V1262GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now
x8 HY57V56820FTP 6 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now
x16 HY57V561620FTP 6 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now
x16 HY5V56FFP 6 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now
256Mb x32 HY5V52AFP 6 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now
x8 H57V2582GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now
x16 H57V2562GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now
x16 H57V2562GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now
x32 H57V2622GMR 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now
SDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
256Mb x16 H5PS2562GFR S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Q4 '10
x8 H5PS5182GFR E3 / C4 / Y4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
512Mb x16 H5PS5162FFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
H5PS5162GFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
x8 HY5PS1G831CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
x8 H5PS1G83EFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
1Gb x16 HY5PS1G1631CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
x16 H5PS1G63EFR E3 / C4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
x32 H5PS1GC2FMR E3 / C4 / Y5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now
DDR2 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
x8 H5TQ1G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
1Gb H5TQ1G83DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
x16 H5TQ1G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
H5TQ1G63DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
x8 H5TQ2G83AFR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
2Gb x8 H5TQ2G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
x16 H5TQ2G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
x32 H5TQ2GC3DMR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now
DDR3 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
128Mb x16 HY5DU281622FTP 4 / 5 / D43 / D4 / J / H Normal / Low 0~70 / -40~85 TSOP 2.5V Now
x16 H5DU1262GTR FA / FB / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now
x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now
256Mb x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now
x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now
x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now
x8 H5DU5182ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now
512Mb x8 H5DU5182EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now
x16 H5DU5162ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now
x16 H5DU5162EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now
DDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
Note : At tOPER 85~95 , Double refresh rate is required.
Note : At tOPER 85~95 , Double refresh rate is required.
Consumer Memory
Product Line-up
11
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Mobile
Memory
General Description
Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and
lighter than ever, consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained,
informed, and productive. As consumer life styles become more mobile, there is ever increasing demand for connectivity. Mobile
devices will require high performance memories, with very low power consumption for extended battery life. Devices that use Hynix
Mobile Memory enables everything you love on-the-go. Hynix Mobile Memory products offered in small footprint packages have
superior power saving features useful in all handheld devices such as cellular phones, PDAs, MP3 players, etc. Hynix Mobile
Memories are ideal for portable applications which require very low power consumption. Hynix’s Mobile Business Group offers a
broad variety of products enabling our customers to deliver next-generation devices in time to market
Mobile DRAM
Broad Product Line: LPSDR / LPDDR, x16 / x32 organizations, 256Mb~2Gb densities
LP
DDR2, x32 organization, 2Gb density
Diverse Packaging Options: Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)
Small Form Factor Packages: For use in the most space-constrained handheld applications
Low Power Features: Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh
Major Applications: Mobile Phone, PDA, MP3 Player, Digital Still Camera, MID (Mobile Internet Device), PND (Portable Navigation
Device), Personal Media Player (PMP), Handheld Game Console, e-book
LPDDR2 will be the next generation mainstream. Hynix set the standard for LPDDR2 technology along with LPDDR
MCPs in Mobile Application MCP Line-up
Bandwidth Comparison Transition to LPDDR2
MCP
Small Form Factor package saves space in Handheld Devices
High Capacity Data Storage, High Speed, with Low Power Consumption
In-house manufacturing provides cost efficient solutions in a timely manner
Major Application - Mobile Phone, Smartphone, PDA Phone, Digital Still Camera, MID (Mobile Internet Device), Wireless
LAN Card, Handheld Game Console, Netbook
12
LPSDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
64M x 16 166MHz H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
2Gb 32M x 32 166MHz H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 166MHz H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 133MHz H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
64M x 16 133MHz H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G62AFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S1G62AFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32 133MHz H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G22AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S1G22AFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 133MHz H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 166MHz H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S5162DFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
32M x 16 133MHz H55S5162DFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S5162EFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
512Mb 133MHz H55S5162EFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S5122DFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32 133MHz H55S5122DFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S5122EFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S5122EFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 16 166MHz H55S2562JFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
256Mb 133MHz H55S2562JFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
8M x 32 166MHz H55S2622JFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz H55S2622JFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
LPDDR2
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
2Gb 64M x 32 DDR2-800 H9TKNNN2GDMPLR-NDM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
DDR2-667 H9TKNNN2GDMPLR-NYM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
LPDDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
64M x 16 DDR400 H5MS2G62MFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G62MFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
2Gb 32M x 32 DDR400 H5MS2G22MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G22MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 DDR400 H5MS2G32MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) DDR333 H5MS2G32MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G62MFP-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G62MFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
64M x 16 DDR266 H5MS1G62MFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G62AFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G22MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G22MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32 DDR266 H5MS1G22MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G22AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G32MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 DDR333 H5MS1G32MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR266 H5MS1G32MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) DDR400 H5MS1G32AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS5162DFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5162DFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
32M x 16 DDR266 H5MS5162DFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS5162EFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
512Mb DDR333 H5MS5162EFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS5122DFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5122DFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32 DDR266 H5MS5122DFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS5122EFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5122EFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS2562JFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
16M x 16 DDR333 H5MS2562JFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
256Mb DDR266 H5MS2562JFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS2622JFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
8M x 32 DDR333 H5MS2622JFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR266 H5MS2622JFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
* All SDRAM is Available For Lead Free or Lead & Halogen Free
* All SDRAM is Available For Lead Free or Lead & Halogen Free
Mobile Memory
Product Line-up
13
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Items 41nm 32G MLC 32nm 32G MLC 26nm 64G MLC
Voltage 3.3V 3.3V 3.3V
Organization x8 x8 x8
Page & Block size (P/B) 4KB+224B / 512KB 8KB+448B / 2MB 8KB+448B / 2MB
tRC(min) / tWC (min) 25ns 25ns 20ns
tR (max) 60us 200us 200us
Program time (typ.) 1000us 1600us 1700us
Erase time (typ.) 3ms 2.5ms 3.5ms
Operating current MONO / DDP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)
QDP / DSP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 60mA(max) 30mA(typ.) ~ 60mA(max)
Copyback O with Data out O with Data out O with Data out
Function Cache Program O O O
Cache Read O O O
2 Plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase
Enhanced Data Out O O O
Special / Function OTP O O O
Unique ID O O O
Endurance / Package
E/W Cycles / Retention 5K / 10 years 3K / 10 years TBD
NOP 1 1 1
Package VLGA VLGA / TSOP VLGA
NAND Flash
Memory
General Description
Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging (TSOP, VLGA
and FBGA). Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such
as MP3, PMP, Digital camera, Camcorder, Memory card, USB flash drive and other consumer electronics such as game console,
Navigation. Currently, Hynix NAND Flash Memory is being widely adopted in the mobile handset applications and we are also
developing PC storage solutions based on the NAND Flash chips. To meet the growing demand for high capacity and improved
performance in mobile applications, Hynix is offering HiFFS (Flash File System) software with eHiFFS system that enhances NAND
chip performance and reliability.
NAND Flash Key Features
NAND Flash Applications Hynix NAND Flash
14
Software Support
Hynix SSD & e-NAND
SSD (Solid State Drive)
SSD is one of the fastest growing NAND applications in the world.
Because of its strengths - Speed, Performance, Reliability, and
Power Consumption - many computing devices such as MID, Net
Book, Notebook, Servers, etc have replaced conventional hard
drives with SSD. Hynix offers SSM (Solid State Module) and SSD for
mobile and personal computing devices.
Items Features
Bus Interface SATA 3.0Gbps
Capacities 128GB, 256GB, 512GB
Form Factor Standard 2.5
Dimension 69.9 x 100 x 7mm
Sustained Performance - 128KB, MAX Read 260MB/s / Write 260MB/s
Random Performance - 4KB, MAX Read 30K IOPS / Write 10K IOPS
Power Consumption Active : 2.0W / Stand-by : 240mW
Temperature Range 0’c to 70’c for Operating / -55’c to 95’c for Storage
MTBF 1,000,000 Hrs
BER 1 error in 10
14
bits transferred
HiFFS Software
HiFFS is a flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has
Flash memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.
Features
Flash memory file system solution for mobile embedded system
Higher performance and reliability
Fully compatible with FAT 12 / 16 / 32 file system standards
Journaling error recovery mechanism
Support various NAND Flash memory types such as small block,
large block, MLC and SLC and TLC.
Efficient bad block management and wear-leveling
Support UMS(USB Mass Storage) and external flash memory cards
Higher read / write performance
Fast booting
Support various operating systems such as WinCE, Linux,
Non-OS, Windows Mobile
SSD Key Features
15
e-NAND
Combination of NAND Flash and the Flash Controller with MMC interface, in a single package
Simple read / write memory using standard MMC 4.3 / 4.4 protocol interface.
No additional firmware for NAND management required
Controller includes NAND software such as FTL, ECC, FAT-16/32
HY27US08281A 90nm 128Mb 16KB Mono 3.3V / x8 TSOP / USOP Now
HY27US08561A 90nm 256Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
HY27US08121B 70nm 512Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
H27U518S2C 57nm 512Mb 16KB Mono 3.3V / x8 TSOP Now
HY27US081G1M 70nm 1Gb 16KB Mono 3.3V / x8 USOP Now
HY27US081G1A 57nm 1Gb 16KB Mono 3.3V / x8 TSOP Now
HY27UF081G2A 70nm 1Gb 128KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
HY27US081G2A 70nm 1Gb 128KB Mono 1.8V / x8 FBGA Now
H27U1G8F2B 48nm 1Gb 128KB Mono 3.3V / x8 TSOP / FBGA Now
H27U1G8F2B 48nm 1Gb 128KB Mono 1.8V / x8 FBGA Now
HY27UF082G2A 70nm 2Gb 128KB Mono 3.3V / x8 TSOP / LGA Now
HY27UF082G2B 57nm 2Gb 128KB Mono 3.3V / x8 TSOP / FBGA Now
HY27UF084G2B 57nm 4Gb 128KB Mono 3.3V / x8 TSOP Now
H27U4G8F2D 41nm 4Gb 128KB Mono 3.3V / x8 TSOP Now
HY27UG088G5(D)B 57nm 8Gb 128KB DDP 3.3V / x8 TSOP / LGA Now 2CE / Dual CH.
HY27UH08AG5B 57nm 16Gb 128KB QDP 3.3V / x8 TSOP Now 2CE
NAND Flash SLC COMPONENT
PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H27UAG8M2M 41nm 16Gb 768KB (4KB page) SDP 3.3V / x8 VLGA Now
H27UBG8M2A 32nm 32Gb 1MB (4KB page) SDP 3.3V / x8 VLGA Now
H27UCG8N5A 32nm 64Gb 1MB (4KB page) DDP 3.3V / x8 VLGA Now
PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H27U8G8T2B 48nm 8Gb 512KB Mono 3.3V / x8 TSOP Now
H27UAG8T2BTR 32nm 16Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP Now
H27UAG8T2A 41nm 16Gb 512KB (4KB Page) Mono 3.3V / x8 TSOP Now
H27UBG8U5A 41nm 32Gb 512KB (4KB Page) DDP 3.3V / x8 TSOP Now
H27UBG8T2M 41nm 32Gb 512KB (4KB Page) Mono 3.3V / x8 VLGA Now
H27UBG8T2A 32nm 32Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP / VLGA Now
H27UCG8VFA 41nm 64Gb 512KB (4KB Page) QDP 3.3V / x8 TSOP Now
H27UCG8UDM 41nm 64Gb 512KB (4KB Page) DDP 3.3V / x8 VLGA Now Dual CH.
H27UCG8U5(D)A 32nm 64Gb 2MB (8KB Page) DDP 3.3V / x8 TSOP / VLGA Now Dual CH. LGA
H27UCG8T2M 26nm 64Gb 2MB (8KB Page) SDP 3.3V / x8 VLGA Now
H27UDG8VEM 41nm 128Gb 512KB (4KB Page) QDP 3.3V / x8 VLGA Now 4CE, Dual CH.
H27UDG8V5(E)A 32nm 128Gb 2MB (8KB Page) QDP 3.3V / x8 TSOP / VLGA Now 4CE, Dual CH.
H27UEG8YEA 32nm 256Gb 2MB (8KB Page) ODP 3.3V / x8 VLGA Now 4CE, Dual CH.
NAND Flash MLC COMPONENT
PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H24U1GTM3ARH 1GB 48nm 8Gb 1 3.3V / x4 Class-4 Now
H24U2GTM1BRH 2GB 41nm 16Gb 1 3.3V / x4 Class-4 Now
H24U4GUM1ARH 4GB 41nm 16Gb 2 3.3V / x4 Class-6 Now
H24U8GVM1MRH 8GB 41nm 16Gb 4 3.3V / x4 Class-6 Now
H24UAGYM1MRH 16GB 41nm 16Gb 8 3.3V / x4 Class-6 Now
H24U2GTM1DRH 2GB 32nm 16Gb 1 3.3V / x4 Class-6 Oct’ 10
uSD COMPONENT
PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK
TECH. DENSITY STACK
BASE COMPONENT
NAND Flash
Product Line-up
16
NAND Flash TLC COMPONENT
H2DQDG8VD1MYR 32nm 128Gb 256KB 4 3.3V / x8 VLGA Now VccQ=1.8V
H2DUDG8VD1MYR 32nm 128Gb 256KB 4 3.3V / x8 VLGA Now VccQ=3.3V
H2DQEG8VD1MYR 32nm 256Gb 256KB 8 3.3V / x8 VLGA Now VccQ=1.8V
H2DUEG8VD1MYR 32nm 256Gb 256KB 8 3.3V / x8 VLGA Now VccQ=3.3V
PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
E2NAND2.0
H26M11001BAR 1GB 48nm 8Gb 1 3.3V / x8 / x4 MMC4.3 Now
H26M21001CAR 2GB 41nm 16Gb 1 3.3V / x8 / x4 MMC4.3 Now
H26M32001CAR 4GB 41nm 16Gb 2 3.3V / x8 / x4 MMC4.3 Now
H26M32001DAR 4GB 32nm 32Gb 1 3.3V / x8 / x4 MMC4.4 Now
H26M42001DAR 8GB 41nm 16Gb 2 3.3V / x8 / x4 MMC4.3 Now
H26M42001EFR 8GB 32nm 32Gb 2 3.3V / x8 / x4 MMC4.4 Now
H26M54001AJR 16GB 41nm 32Gb 4 3.3V / x8 / x4 MMC4.3 Now
H26M54001BKR 16GB 32nm 32Gb 4 3.3V / x8 / x4 MMC4.4 Now
H26M68001MJR 32GB 41nm 32Gb 8 3.3V / x8 / x4 MMC4.3 Now
H26M68001ANR 32GB 32nm 32Gb 8 3.3V / x8 / x4 MMC4.4 Now
e-NAND COMPONENT
PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK
TECH. DENSITY STACK
BASE COMPONENT
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
CIS
CMOS Image Sensor
General Description
Cameras are now embedded in every consumer application. From cell phones
to Laptops, taking pictures or streaming self video images to friends are part of
everyday life. Through Hynix CIS, these images can be realized with improved
clarity and more lively ways. Delivering an important moment of one’s life is a
pleasure one can never part with.
The year 2010 will be a milestone for Hynix CIS product line as it gears up
toward being the market leader. Hynix is enhancing its technical excellence in
accelerating technology development to provide advanced quality products and
meet the next level of customer needs
CMOS Image Sensor
CMOS image sensor is a device that converts an optical image to an electrical signal using a CMOS technology. CMOS technology
enables integration of image sensing and digital signal processing on the same chip, resulting in faster, smaller, less expensive,
and lower power image sensing devices.
CMOS image sensor market has a high growth potential, with demand expected to rise by 10 percent annually through 2012.
Its main applications are camera phones, digital still cameras and video conferencing systems, but the market for CMOS image
sensor is rapidly diversifying into applications such as surveillance systems, automotive cameras, and medical equipment.
Camera Attachment Ratio
of Mobile Phones
Applications
Camera Phone
Dual-camera products
Web cams
Other mobile gadgets
1.3M 2M 3MVGA
17
Hynix CMOS Image Sensor
Technology Migration
Camera Phone Resolution Trend
(Main Camera)
Pixel Size 2.25um 2.25um
Array Format (Active) 640H 480V
Optical Format 1/10-inch
Imaging Area 1.44mm 1.08mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate 30-fps @ 24MHz
Shutter Electronic rolling Shutter (ERS)
Digital I/O: 1.7V 3.0V
Supply Voltage Digital Core: 1.7V 1.9V
Analog & Pixel: 2.6V 3.0V
Window size Programmable (including VGA, QVGA, CIF, QCIF)
Flash Support Xenon and LED
Sensitivity 1280mV / LuxSec
SNR 39dB
Dynamic Range 60dB
ADC On-chip, 10-bit
Data Rate 12 megapixels per second
(master clock, 24MHz)
Auto Exposure, Auto White Balance,
Black Level Calibration, Dead pixel Correction,
Windowing, Sub-Sampling,
Features Image Flip, Anti-Flicker, Noise Reduction,
Edge Enhancement, Brightness, Color Saturation,
Gamma Correction, Color Correction,
Lens Shading Correction
Packaging ShellUT CSP
Operating Temp. -20 to 60
Range
VGA (YACBA21S)
SNR 38dB
Dynamic Range 60dB
ADC On-chip, 10-bit
Auto Exposure, Auto White Balance,
Black Level Calibration, Dead pixel Correction,
Windowing, Sub-Sampling, Image Scaling,
Features Image Flip, Anti-Flicker, Noise Reduction,
Edge Enhancement, Brightness, Color Saturation,
Gamma Correction, Color Correction,
Lens Shading Correction
Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP
Operating Temp. -20 to 60
Range
1.3M (YACC6A1S)
Pixel Size 1.75um 1.75um
Optical Format 1/5-inch
Array Format (Active) 1600H 1200V
Imaging Area 2.80mm 2.10mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate Max 15-fps @ full resolution
Shutter Electronic rolling Shutter (ERS)
Digital I/O: 1.7V 3.0V
Supply Voltage Digital Core: 1.7V 1.9V
Analog & Pixel: 2.6V 3.0V
Window size Programmable (including UXGA, SVGA, QSVGA)
Flash Support Xenon and LED
Sensitivity 700mV / lux.sec
SNR 38dB
Dynamic Range 60dB
ADC On-chip, 10-bit
Data Rate 36 megapixels per second
(Internal PLL clock = 72MHz)
Auto Exposure, Auto White Balance,
Black Level Calibration, Dead pixel Correction,
Edge Data for Auto Focus,
Motion Data for Anti-shaking, Windowing,
Features Sub-Sampling, Image Scaling, Image Flip,
Anti-Flicker, Noise Reduction, Strobe Control,
Edge Enhancement, Brightness , Color Saturation,
Gamma Correction, Color Correction,
Lens Shading Correction
Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP
Operating Temp. -20 to 60
Range
2M (YACD5B1S / YACD511S)
Pixel Size 1.75um 1.75um
Optical Format 1/4-inch
Array Format (Active) 2048H 1356V
Imaging Area 3.640mm 2.744mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate 15-fps @ QXGA, 30-fps @ XGA
Shutter Electronic rolling Shutter (ERS)
Digital I/O: 1.7V 3.0V
Supply Voltage Digital Core: 1.7V 1.9V
Analog & Pixel: 2.6V 3.0V
Window size Programmable
Sensitivity 700mV / lux-sec @ 550nm (est.)
SNR 32dB (est.)
Dynamic Range 60dB
ADC On-chip, 10-bit
Auto Exposure, Auto white balance,
Black level calibration, Dead pixel Correction,
Auto Focus Control, Anti-Shaking, Windowing,
Sub-Sampling, Image Scaling, Image Flip,
Features Anti-flicker, Noise Reduction, Strobe Control,
Edge Enhancement , Brightness, Color Saturation
Gamma Correction, Color Correction
Lens Shading Correction,
MCU Embeded,
JPEG Encoder with thumbnail support
Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP
Operating Temp. Range -20 to 60
3M (YACE4A1S)
Pixel Size 1.75um
Optical Format 1/6-inch
Array Format (Active) 1280H 1024V
Imaging Area 2.296mm 1.848mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate 20fps @ SXGA, 30fps @ 720P, 40fps @ VGA
Shutter Electronic rolling Shutter (ERS)
Digital I/O: 1.7V 3.0V
Supply Voltage Digital Core: 1.7V 1.9V
Analog & Pixel: 2.6V 3.0V
Window size Programmable
Flash Support Xenon and LED
Sensitivity 700mV / LuxSec
CMOS Image Sensor
Product Line-up and Key Features
18
*. YACE4B1S is available with smaller size but JPEG is not embedded.
HEADQUARTERS & FACTORY
HYNIX SEMICONDUCTOR INC. (H.S.I)
HEADQUARTERS & FACTORY
San 136-1, Ami-Ri, Bubal-Eub, Icheon-si,
Kyoungki-Do, 467-701, Korea
Tel: 82-31-630-4114 Fax: 82-31-630-4103
MARKETING & SALES DIVISION
891 Daechi-dong, Kangnam-gu, Seoul,
135-738, Korea
Tel: 82-2-3459-5114 Fax: 82-2-3459-5987/8
CHEONGJU FACTORY
1, Hyangjeong-dong, Hungduk-gu, Cheongju-si,
Chungbuk, 361-725, Korea
Tel: 82-43-270-3114 Fax: 82-43-270-2145
AMERICA
HYNIX SEMICONDUCTOR AMERICA INC. (H.S.A)
3101 North First Street, San Jose, CA 95134, U.S.A
Tel: 1-408-232-8000 Fax: 1-408-232-8103
ATLANTA OFFICE
907 Santa Anita Drive Woodstock, GA 30189, U.S.A
Tel: 1-678-445-7768 Fax: 1-678-445-8120
AUSTIN OFFICE
4201 West Parmer Lane Bldg. B, Suite 280 Austin,
TX 78727, U.S.A
Tel: 1-512-339-5731 Fax: 1-512-821-3730
CHICAGO OFFICE
1920 North Thoreau Drive Suite 170 Schaumburg,
IL 60173, U.S.A
Tel: 1-847-925-0190 Fax: 1-847-925-0196
DALLAS OFFICE
1701 Gateway Blvd, Suite 357 Richardson,
TX 75080, U.S.A
Tel: 1-972-690-4969 Fax: 1-972-690-1065
DENVER OFFICE
2308 Hearth Drive #28 Evergreen CO 80439
, U.S.A
Tel: 1-303-679-3515
GLENDALE OFFICE
500 N. Central Avenue, Suite 810 Glendale, CA 91203
,
U.S.A
Tel: 1-818-242-7420 Fax: 1-818-242-7421
HOUSTON OFFICE
13455 Cutton Rd Suite 1-I Houston, TX 77069, U.S.A
Tel: 1-281-444-4908 Fax: 1-281-444-4918
NEW YORK OFFICE
10 Lafayette Court, Suite 10A Fishkill, NY 12524, U.S.A
Tel: 1-845-896-0353 Fax: 1-845-896-0577
RALEIGH OFFICE
5511 Capital Center Drive, Suite 330 Raleigh,
NC 27606, U.S.A
Tel: 1-919-859-1244 Fax: 1-919-859-3137
EUROPE
HYNIX SEMICONDUCTOR DEUTSCHLAND GMBH. (H.S.D)
Am Prime Parc 13 Kelsterbacher Str.16 D-65479
Raunheim Germany
Tel: 49-6142-921-100 / 206
Fax: 49-6142-921-290 / 214
MILANO OFFICE
Via Alessandro Volta 18, 20094 Corsico, Milano, Italy
Tel: 39-2-4862-0502 Fax: 39-2-4586-4733
MOSCOW OFFICE
123242, Moscow, Krasnaya Presnya str., 13, 5th fl,
room 33, Russia
Tel: 7-495-924-52-84 Fax: 7-495-924-52-84
PARIS OFFICE
Bureaux de Sevres-2 rue Troyon 92316 SEVRES Cedex,
Paris, France
Tel: 33-141-14-83-41 Fax: 33-141-14-83-40
STOCKHOLM OFFICE
Flygfaltsgaten 1, SE-12830 Skarpnack
Stockholm, Sweden
Tel: 46-8-605-7290 Fax: 46-8-605-2640
HELSINKI OFFICE
Technopolis, Innopoli 2, Tekniikkatie 14, 02150, Espoo,
Finland
Tel: 358-46-712-1081 Fax: 358-712-1080
HYNIX SEMICONDUCTOR U.K. LTD. (H.S.U)
241 Brooklands Road, Weybridge, Surrey KT13 0RH, U.K
Tel: 44-1932-827-700 Fax: 44-1932-827-745~7
LIMERICK OFFICE
3rd Floor, lvernia Hall, 97 Henry Street Limerick, Ireland
Tel: 353-61-400-755 Fax: 353-61-400-757
STIRLING OFFICE
Office 2/1 Springfield House Laurel Hill Business Park
Laurel Hill Stirling, FK 7 9JQ, Scotland, U.K
Tel: 44-1932-827-750 Fax: 44-1932-827-759
JAPAN
HYNIX SEMICONDUCTOR JAPAN INC. (H.S.J)
23F SHIROYAMA TRUST TOWER, 4-3-1 Toranomon,
Minatoku, Tokyo, Japan
Tel: 81-3-6403-5500 Fax: 81-3-6403-5590 / 5591
OSAKA OFFICE
12 th Fl., Sumitomo Seimei Shin-Osaka Higashiguchi
Bldg., 1-19-4 Higashinakajima, Higashiyodogawa-Ku
Osaka 533-0033, Japan
Tel: 81-6-4809-8851 Fax: 81-6-4809-8966
ASIA PACIFIC
HYNIX NUMONYX SEMICONDUCTOR LTD. (H.N.S.L)
Lot K7, Wuxi Export Processing Zone in Wuxi New
District, Wuxi, Jiangsu Province, China
Tel: 86-510-8520-8888
Fax: 86-510-8520-8181 / 8282
HYNIX SEMICONDUCTOR ASIA PTE. LTD. (H.S.S)
7 Temasek Boulevard #42-02, Suntec City Tower 1,
Singapore 038987
Tel: 65-6338-5966 Fax: 65-6336-5911 / 5922
PENANG OFFICE
Unit 17 lower level 5, Hotel Equatorial Penang 1 Jalan
Bukit Jambul Bayan Lepas 11900 Penang, Malaysia
Tel: 60-04-643-2428 Fax: 60-04-643-2432
HYNIX SEMICONDUCTOR INDIAN SUBCONTINENT PVT LTD. (H.S.I.S)
Unit 10, Level 8, Innovator Building, ITPB(International
Technology Park Bangalore), Whitefield Road,
Bangalore, 560066, India
Tel: 91-80-4126-5271~2 Fax: 91-80-4126-5274
HYNIX SEMICONDUCTOR HONG KONG LTD. (H.S.H)
Suite 2401, 24F., Central Plaza, 18 Harbour Road
Wanchai, Hong Kong
Tel: 852-2971-1600 Fax: 852-2971-1622
HYNIX SEMICONDUCTOR TAIWAN INC. (H.S.T)
Lite-On Technology Building 11F, No. 392,
Ruey Kuang Road, Neihu, Taipei 11492 Taiwan, R.O.C
Tel: 886-2-8752-2300 Fax: 886-2-8752-8368
HYNIX SEMICONDUCTOR (Shanghai) CO., LTD. (H.S.C.S)
Room 2702-2705, Maxdo Center, No.8, Xing Yi RD,
Changning Zone, Shanghai, China
Tel: 86-21-5208-0505 Fax: 86-21-5208-0802
BEIJING OFFICE
Room1401 Landmark Building, 8 North Dongsanhuan
Road, Chaoyang District, Beijing 100004, China
Tel: 86-10-6590-6546 Fax: 86-10-6590-0908
SHENZHEN OFFICE
Room1906-1909, Fu Chun Dong Fang Building
No 7006 ShenNan Road, ShenZhen, China
Tel: 86-755-8257-1591 Fax: 86-755-8257-1584
2H-10 Catalog
HY2010AUG
www.hynix.com