DISCRETE SEMICONDUCTORS DATA Sir RS1 series = Sl OMA fast soft-recovery controlled avalanche rectifiers Product specification 2000 Feb 14 PHILIPSPhilips Semiconductors Product specification SMA fast soft-recovery controlled avalanche rectifiers RS1 series FEATURES Glass passivated High maximum operating temperature Ideal for surface mount automotive applications Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape e Marking: cathode, date code, type code e Easy pick and place. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode band ao Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vrrm repetitive peak reverse voltage RS1A - 50 Vv RS1B - 100 Vv RS1D - 200 Vv RS1G - 400 Vv RS1J - 600 Vv RS1K - 800 Vv RS1M - 1000 Vv Vr continuous reverse voltage RS1A - 50 Vv RS1B - 100 Vv RS1D - 200 Vv RS1G - 400 Vv RS1J - 600 Vv RS1K - 800 Vv RS1M - 1000 Vv 2000 Feb 14Philips Semiconductors Product specification SMA fast soft-recovery - RS1 series controlled avalanche rectifiers SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veams root mean square voltage RS1A - 35 Vv RS1B - 70 Vv RS1D - 140 Vv RS1G - 280 Vv RS1J - 420 Vv RS1K - 560 Vv RS1M - 700 Vv lF(AV) average forward current averaged over any 20 ms period; - 1 A Tip = 110 C; see Fig.2 l-sm non-repetitive peak forward current t = 8.3 ms half sine wave; - 25 A Tj = 25 C prior to surge; VR 5 VRRMmax Tstg storage temperature 65 +175 C Tj junction temperature See Fig.3 65 +175 C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Ve forward voltage lr = 1 A; see Fig.4 - 1.3 Vv IR reverse current Vr = Varmmax; see Fig.5 - 5 HA Vr = VarMmax | = 165 C; see Fig.5 - 50 HA ter reverse recovery time when switched from Ir = 0.5 A to IR = 1 A; RS1A to RS1J measured at Ip = 0.25 A; see Fig.9 _ 250 ns RS1K and RS1M - 300 ns Cq diode capacitance Va =4V;f=1 MHz; see Fig.6 7 - pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pith itp thermal resistance from junction to tie-point; see Fig.7 27 K/W Rih ja thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2Os3 printed-circuit board, 0.7 mm thick; thickness of copper 235 um. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper >40 um. For more information please refer to the General Part of associated Handbook. 2000 Feb 14 3Philips Semiconductors Product specification SMA fast soft-recovery controlled avalanche rectifiers RS1 series GRAPHICAL DATA MCD822 0.5 \ IN 0 \ 0 40 80 120 160 200 Tip (C) Va = Varmmax; 5 = 0.5; a = 1.57. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGD483 120 80 40 0 400 800 1200 R Device mounted as shown in Fig.8. Solid line: AlsOg printed-circuit board. Dotted line: epoxy printed-circuit board. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. MCD791 10-1 10-2 10-3 7) =25C. Fig.4 Forward current as a function of forward voltage; typical values. 1 02 MCD803 R T, =165 C 0 20 40 60 80 100 VR (%VRmaw) Fig.5 Reverse current as a function of reverse voltage; typical values. 2000 Feb 14Philips Semiconductors Product specification SMA fast soft-recovery controlled avalanche rectifiers RS1 series MCD800 102 10-2 10-1 1 10 102 f= 1 MHz; Tj = 25 C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. MBL 120 102 Zth j-tp (KW) Fig.7 Transient thermal impedance as a function of pulse width. 50 al ] 4.5 Tey 50 025 y _ Le 1.25 MSB213 Dimensions in mm. Material: AlpO3 or epoxy-glass. Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14Philips Semiconductors Product specification SMA fast soft-recovery - RS1 series controlled avalanche rectifiers DUT IF ~~ (A) wr ad + 0.55 102 | 25V tir , ) 0 na t 0.26 F-----A------- IR MAM057 VOT TTT TTT TT Input impedance oscilloscope: 1 MQ, 22 pF; t, < 7 ns. Source impedance: 50 Q; t < 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6Philips Semiconductors Product specification SMA fast soft-recovery . - RS1 series controlled avalanche rectifiers PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors $0D124 ait H | < D ~ | j | Vv | A | AY y \ ' | ae $___________ Q i i E b ' t | 0 2.5 5mm L l l l l l l l l l J scale DIMENSIONS (mm are the original dimensions) UNIT A Ay b c D E H Q 2.3 1.6 4.5 2.8 5.5 3.3 mm | a0 | O] 14 | F | 43 | 24 | 5a | 27 Note 1. The marking band indicates the cathode. REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SoD124 DO-214AC ae 99-10-22 2000 Feb 14 7