TPS26623DRCT - TEXAS INSTRUMENTS

April, 2014 − Rev. 0 1Publication Order Number:

NTS10100MFS/D

NTS10100MFS,

NRVTS10100MFS

Very Low Forward Voltage

Trench-based Schottky

Rectifier

Features

•Fine Lithography Trench−based Schottky Technology for Very Low

Forward Voltage and Low Leakage

•Fast Switching with Exceptional Temperature Stability

•Low Power Loss and Lower Operating Temperature

•Higher Efficiency for Achieving Regulatory Compliance

•Low Thermal Resistance

•High Surge Capability

•NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These are Pb−Free and Halide−Free Devices

Typical Applications

•Switching Power Supplies including Notebook / Netbook Adapters,

ATX and Flat Panel Display

•High Frequency and DC−DC Converters

•Freewheeling and OR−ing diodes

•Reverse Battery Protection

•Instrumentation

Mechanical Characteristics:

•Case: Epoxy, Molded

•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

•Lead Finish: 100% Matte Sn (Tin)

•Lead and Mounting SurfaceTemperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Device Meets MSL 1 Requirements

Device Package Shipping†

ORDERING INFORMATION

NTS10100MFST1G SO−8 FL

(Pb−Free) 1500 /

Tape & Reel

SCHOTTKY BARRIER

RECTIFIERS

10 AMPERES

100 VOLTS

http://onsemi.com

1,2,3 5,6

SO−8 FLAT LEAD

CASE 488AA

STYLE 2

TH1010 = Specific Device Code

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

MARKING

DIAGRAM

TH1010

AYWWZZ

Not Used

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NTS10100MFST3G SO−8 FL

(Pb−Free) 5000 /

Tape & Reel

NRVTS10100MFST1G SO−8 FL

(Pb−Free) 1500 /

Tape & Reel

NRVTS10100MFST3G SO−8 FL

(Pb−Free) 5000 /

Tape & Reel

NTS10100MFS, NRVTS10100MFS

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR100

Average Rectified Forward Current

(Rated VR, TC = 137°C) IF(AV) 10 A

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz, TC = 134°C) IFRM 16 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A

Storage Temperature Range Tstg −65 to +150 °C

Operating Junction Temperature TJ−55 to +150 °C

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ

ESD Rating (Human Body Model) 3B

ESD Rating (Machine Model) M4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC 2.0 − °C/W

ELECTRICAL CHARACTERISTICS

Instantaneous Forward Voltage (Note 1)

(iF = 5 Amps, TJ = 25°C)

(iF = 10 Amps, TJ = 25°C)

(iF = 5 Amps, TJ = 125°C)

(iF = 10 Amps, TJ = 125°C)

vF0.512

0.620

0.450

0.574

−

0.690

−

0.590

Instantaneous Reverse Current (Note 1)

(VR = 70 V, TJ = 25°C)

(Rated dc Voltage, TJ = 25°C)

(VR = 70 V, TJ = 125°C)

(Rated dc Voltage, TJ = 125°C)

iR7.0

4.0

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

NTS10100MFS, NRVTS10100MFS

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Typical Instantaneous Forward

Characteristics Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)

1.00.90.80.50.40.30.10

0.1

100

0.1

100

Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)

907060504020100

1.E−07

Figure 5. Typical Junction Capacitance Figure 6. Current Derating

VR, REVERSE VOLTAGE (R) TC, CASE TEMPERATURE (°C)

1001010.1

100

1,000

10,000

150140130120110

iF, INSTANTANEOUS FORWARD

CURRENT (A)

iF, INSTANTANEOUS FORWARD

CURRENT (A)

IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)

IF(AV), AVERAGE FORWARD

CURRENT (A)

0.2 0.6 0.7 1.1 1.2

TA = −55°C

TA = 25°C

TA = 125°C

TA = 150°C

1.00.90.80.50.40.30.10 0.2 0.6 0.7 1.1 1.2

TA = −55°C

TA = 25°C

TA = 125°C

TA = 150°C

30 80 100

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

TA = 25°C

TA = 125°C

TA = 150°C

IR, INSTANTANEOUS REVERSE CURRENT (A)

907060504020100 30 80 100

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

TA = 25°C

TA = 125°C

TA = 150°C

TJ = 25°CRqJC = 2.0°C/W

Square Wave

NTS10100MFS, NRVTS10100MFS

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Forward Power Dissipation

IF(AV), AVERAGE FORWARD CURRENT (A)

12108146420

Figure 8. Thermal Characteristics

PULSE TIME (sec)

0.1 100.001 0.010.00010.000010.000001

0.01

0.1

100

Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case

PULSE TIME (sec)

PF(AV), AVERAGE FORWARD

POWER DISSIPATION (W)

R(t) (°C/W)

26 TJ = 150°C

IPK/IAV = 20 IPK/IAV = 10

IPK/IAV = 5

Square Wave

1 100 1000

0.1 100.001 0.010.00010.000010.000001

0.01

0.1

R(t) (°C/W)

1 100 1000

50% Duty Cycle

20%

10%

Single Pulse

50% Duty Cycle

20%

10%

2% 1%

Single Pulse

Assumes 25°C ambient and soldered

to a 600 mm2 − oz copper pad on PCB

NTS10100MFS, NRVTS10100MFS

http://onsemi.com

PACKAGE DIMENSIONS

M3.00 3.40

q0 −−−

3.80

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE G NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE

MOLD FLASH PROTRUSIONS OR GATE

BURRS.

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

E1 q

0.20 C

2 X

DIM MIN NOM

MILLIMETERS

A0.90 1.00

A1 0.00 −−−

b0.33 0.41

c0.23 0.28

D5.15 BSC

D1 4.50 4.90

D2 3.50 −−−

E6.15 BSC

E1 5.50 5.80

E2 3.45 −−−

e1.27 BSC

G0.51 0.61

K1.20 1.35

L0.51 0.61

L1 0.05 0.17

0.10 C

DETAIL A

e/2

A0.10 BC

0.05 cL

DETAIL A

3 X

4 X

SEATING

PLANE

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

1.50

0.71

0.20

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.270

0.750

1.000

0.905

0.475

4.530

1.530

4.560

0.495

3.200

1.330

0.965

3X 4X

PIN 5

(EXPOSED PAD)

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation s pecial, c onsequential o r i ncidental d amages. “T ypical” p arameters w hich m ay b e p rovided i n S CILLC d ata s heets a nd/or s pecificat ions c a n a nd d o v ary in dif ferent a pplications

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UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NTS10100MFS/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative