2011. 4. 4 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3203
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
HIGH CURRENT APPLICATION.
FEATURES
·Complementary to KTA1271.
MAXIMUM RATING (Ta=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
DC Current Gain
hFE(1) (Note) VCE=1V, IC=100mA 100 - 320
hFE(2) VCE=1V, IC=700mA 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA -- 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA 0.5 - 0.8 V
Transition Frequency fTVCE=5V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 19 - pF
Note : hFE(1) Classification 0:100~200, Y:160~320
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Operating Temperature Topr -40~85 ℃
Storage Temperature Range Tstg -55~150 ℃