LVX>Y y-X 71X"7 -MOSFET Bert y Fa LVX Series Power MOSFET N-F 4 RID, LY ANYAXY bw MAT AE = OUTLINE DIMENSIONS {Unit : mm] 2SK1811 (F20W30) 300V 20A @ANEE (Ciss) AVAL. 2.0 #03 RC ROA PARDATIBEDUNE OF VETO. Ont YFYIIFA LDR). 2.4 403 Osc AB Gate off.0.65 0-2 @it Hess. Aimee SODC/DC IY INF @ Drain @DC12~48VANOREEER @ Source OROME)) Meisz RATINGS @#ExtRRATIH Absolute Maximum Ratings Ud aos & fig RE Hifz Item Symbol Conditions Ratings Unit RB y Storage Temperature Tstg 55~150 Cc Fy RIES y Channel Temperature Teh 150 Cc FLAY -Y- ABE Drain - Source Vokage Voss 300 Vv Fob V-ABE Gate - Source Voltage Voss +30 Vv FU 4 oh DC Ib 20 Continuous Drain Current A Peak Top 40 Yn ABR (ER) i Continuous Source Current (DC) Is 20 A EW oe Total Power Dissipation Pr Te=25C 100 WwW MOH have (CHER Skg - cm) Mounting Torque TOR (Recommended torque + 5kg + cm) 8 kg cm @BRH - MHS Electrical Characteristics (Tc=25C) Br BH acy & fF BUSME Ratings | Hf Item Symbol Conditions min. | typ. | max. | Unit FLAY + 3 ARRBEE _ _ Drain + Source Breakdown Voltage Visrypss| Io>=ImA, Vas=0V 300 Vv FA vet att _ = Zero Gate Voltage Drain Current Toss Vos=300V, Vos=0V 250 BA Fb B I _ = Gate - Source Leakage Current Tass Vos=30V, Vos=0V +100] nA Ek PRSZERES = am - Forward Transconductance gts Ib>=10A, Vos=10V 3 6 Ss FU4Y 2 - ARF YE _ = Static DrainSource On-state Resistance Rosion)| In>=10A, Vas=10V 0.26 0.35 2 FPL WERE - Gate Threshold Voltage Vm | ID=lmA, Vos=10V 2 3 4 YA FAY R44 4 FRE _ Source + Drain Diode Forward Voltage Vso | Is=10A, Vos=0V 15 Vv RER RAR ZH 9 Thermal Resi 8 jc junction and case 1.25 C/W Gato Charge Charectoristi Qe | Vos=10V, D=20A, Voo=200V, 36 nc AEE . Input Capacitance Ciss 1,300 pF maak Crss_| Vos=10V, Vos=0V, =IMH: 155 Reverse Transfer Capacitance TSS bs== , a=0V, f Z pF Hee Output Capacitance Coss 450 pF F-VA VRB t an Ti on 140 | 280 ns a | b=10A, Vo=10V, R.=150 Turn-off Time off 160 | 320 | ns 8 tHE CHARACTERISTIC DIAGRAMS 2SK1811 (F20w: niet Transfer Characteristics Fed y-y2M4t vin Static DraineSource On-state Resistance FobLayPRE Gate Threshold Voltage Safe Operating Area 20 KL > Bit lola) O27 {Tco=25e pulse. KFU4 y+ VARIRBUE Vos(V) Transient Thermal Impedance ARIE Gic(t) (C/W) REM) t Cs) o 0.5 a & = > B z < & > o = & LH # Ee @ e N = & = < #ol " 3 Ds > I + > J A + + _ = Vos=25V s Ves=10V Vos=10V pulse test wm pulse test lo= 1 mA typical typical typical Fob) VARMBE Vos(V) 7~-2BE To(T) 7-2BE To[T) REO Rm iM ERIEE Fs Ivr Capacitance To=250 typical #4 F YR Ciss Coss Crss (pF) KL4y-Y2MMBE Vos(v) SRARDE 7-ARE Power Derating 100 PRARLE (%) 7~ABE ToC) FbhF eS RHE Gate Charge Characteristics KL4 > YRBYBE Vos(V) Fb /V-ARIBE VoslV) a hE Qe (nC)