BC556 ... BC559 BC556 ... BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2011-08-19 Power dissipation - Verlustleistung 18 9 16 C BE 2 x 2.54 Dimensions - Mae [mm] 500 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC556 BC557 BC558/559 Collector-Emitter-voltage E-B short - VCES 80 V 50 V 30 V Collector-Emitter-voltage B open - VCEO 65 V 45 V 30 V Collector-Base-voltage E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 500 mW 1) Collector current - Kollektorstrom (dc) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom IEM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Group A Group B Group C DC current gain - Kollektor-Basis-Stromverhaltnis 2) - VCE = 5 V, - IC = 10 A hFE typ. 90 typ. 150 typ. 270 - VCE = 5 V, - IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 - VCE = 5 V, - IC = 100 mA hFE typ. 120 typ. 200 typ. 400 h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz 1 (c) Small signal current gain Kleinsignal-Stromverstarkung hfe typ. 220 typ. 330 typ. 600 Input impedance - Eingangs-Impedanz hie 1.6 ... 4.5 k 3.2 ...8.5 k 6 ... 15 k Output admittance - Ausgangs-Leitwert hoe 18 < 30 S 30 < 60 S 60 < 110 S Reverse voltage transfer ratio Spannungsruckwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ 1 BC556 ... BC559 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 80 V, (B-E short) - VCE = 50 V, (B-E short) - VCE = 30 V, (B-E short) BC556 BC557 BC558 / BC559 - ICES - ICES - ICES - - - 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA - VCE = 80 V, Tj = 125C, (B-E short) - VCE = 50 V, Tj = 125C, (B-E short) - VCE = 30 V, Tj = 125C, (B-E short) BC556 BC557 BC558 / BC559 - ICES - ICES - ICES - - - - - - 4 A 4 A 4 A - - 80 mV 250 mV 300 mV 650 mV - VBEsat - VBEsat - - 700 mV 900 mV - - - VBE - VBE 600 mV - 660 mV - 750 mV 800 mV fT - 150 MHz - CCBO - 3.5 pF 6 pF CEB0 - 10 pF - F F - - 2 dB 1 dB 10 dB 4 dB Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC556 ... BC558 BC559 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ 2 1 2 RthA < 200 K/W 1) BC546 ... BC549 BC556A BC557A BC558A BC556B BC557B BC558B BC559B BC557C BC558C BC559C Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c)