BAS28
SURFACE MOUNT SILICON
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded SOT-143
surface mount case. This device is designed for high
speed switching applications.
MARKING CODE: A61 or JTW
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 75 V
Peak Repetitive Reverse Voltage VRRM 85 V
Continuous Forward Current IF 250 mA
Peak Repetitive Forward Current IFRM 500 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0ms IFSM 2.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=25V, TA=150°C 30 μA
IR V
R=75V 1.0 μA
IR V
R=75V, TA=150°C 50 μA
VF I
F=1.0mA 715 mV
VF I
F=10mA 855 mV
VF I
F=50mA 1.00 V
VF I
F=150mA 1.25 V
CJ V
R=0, f=1.0MHz 2.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 6.0 ns
Qs I
F=10mA, VR=5.0V, RL=500Ω 45 pC
VFR I
F=10mA, tr=20ns 1.75 V
SOT-143 CASE
R8 (19-September 2018)
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BAS28
SURFACE MOUNT SILICON
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODES
MIN MAX MIN MAX
A 0.003 0.008 0.08 0.20
B0.006-0.15-
C 0.000 0.005 0.01 0.13
D 0.035 0.045 0.89 1.14
E 0.110 0.120 2.79 3.04
F
G 0.083 0.102 2.10 2.60
H 0.047 0.055 1.19 1.40
J 0.012 0.020 0.30 0.50
K 0.030 0.037 0.76 0.93
L
SOT-143 (REV: R3)
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
0.067 1.70
0.075 1.90
SOT-143 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode D1
2) Cathode D2
3) Anode D2
4) Anode D1
MARKING CODE: A61 or JTW
PIN CONFIGURATION
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R8 (19-September 2018)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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when ordering (example: 2N2222A PBFREE).
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