BC846 thru BC849 Small Signal Transistors (NPN) TO-236AB (SOT-23) Mounting Pad Layout .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) Dimensions in inches and (millimeters) Type .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .102 (2.6) .094 (2.4) Type Marking BC846A B 1A 1B BC847A B C 1E 1F 1G Marking BC848A B C 1J 1K 1L BC849B C 2B 2C Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box * NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. * Especially suited for automatic insertion in thick and thin-film circuits. * These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage BC846 BC847 BC848, BC849 VCBO 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCES 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCEO 65 45 30 V Emitter-Base Voltage BC846, BC847 BC848, BC849 VEBO 6 5 V IC 100 mA ICM 200 mA IBM 200 mA -IEM 200 mA Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50C Ptot (1) mW (1) 310 Thermal Resistance Junction to Ambiant Air RJA 450 C/W Thermal Resistance Junction to Substrate Backside RSB 320(1) C/W Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C Note: (1) Device on fiberglass substrate, see layout on third page. 10/2/01 BC846 thru BC849 Small Signal Transistors (NPN) Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit hfe VCE = 5V, IC = 2mA f = 1kHz -- -- -- 220 330 600 -- -- -- -- -- -- Current Gain Group A B C hie VCE = 5V, IC = 2mA f = 1kHz 1.6 3.2 6.0 2.7 4.5 8.7 4.5 8.5 15.0 k Current Gain Group A B C hoe VCE = 5V, IC = 2mA f = 1kHz -- -- -- 18 30 60 30 60 110 S hre VCE = 5 V, IC = 2mA f = 1kHz -- -- -- 1.5 10-4 2 10-4 3 10-4 -- -- -- -- -- -- Current Gain Group A B C hFE VCE = 5V, IC = 10A -- -- -- 90 150 270 -- -- -- -- -- -- Current Gain Group A B C hFE VCE = 5V, IC = 2mA 110 200 420 180 290 520 220 450 800 -- -- -- Collector Saturation Voltage VCEsat IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA -- -- 90 200 250 600 mV Base Saturation Voltage VBEsat IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA -- -- 700 900 -- -- mV Base-Emitter Voltage VBEon VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA 580 -- 660 -- 700 770 mV ICBO VCB = 30V VCB = 30V, TJ = 150C -- -- -- -- 15 5 nA A fT VCE = 5V, IC = 10mA f = 100MHz -- 300 -- MHz Collector-Base Capacitance CCBO VCB = 10V, f = 1MHz -- 3.5 6 pF Emitter-Base Capacitance CEBO VEB = 0.5V, f = 1MHz -- 9 -- pF VCE = 5V, IC = 200A RG =2k,f=1kHz, f= 200Hz -- -- 2 1.2 10 4 dB dB VCE = 5V, IC = 200A RG = 2k, f = 30...15000Hz -- 1.4 4 dB Small Signal Current Gain Current Gain Group A B C Input Impedance Output Admittance Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain Collector-Base Cutoff Current Gain-Bandwidth Product Noise Figure BC846, BC847, BC848 BC849 F BC849 Note: (1) Device on fiberglass substrate, see layout on next page BC846 thru BC849 Small Signal Transistors (NPN) Layout for RJA test 0.30 (7.5) 0.12 (3) Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) Dimensions in inches (millimeters) 0.2 (5) Admissible power dissipation versus temperature of substrate backside Device on fiblerglass substrate, see layout Pulse thermal resistance versus pulse duration (normalized) 0.06 (1.5) Device on fiblerglass substrate, see layout 0.20 (5.1) DC current gain versus collector current Collector-Base cutoff current versus ambient temperature BC846 thru BC849 Small Signal Transistors (NPN) Ratings and Characteristic Curves (T A = 25C unless otherwise noted) BC846 thru BC849 Small Signal Transistors (NPN) Ratings and Characteristic Curves (T A = 25C unless otherwise noted)