Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
BC846 80
Collector-Base Voltage BC847 VCBO 50 V
BC848, BC849 30
BC846 80
Collector-Emitter Voltage BC847 VCES 50 V
BC848, BC849 30
BC846 65
Collector-Emitter Voltage BC847 VCEO 45 V
BC848, BC849 30
Emitter-Base Voltage BC846, BC847 VEBO 6V
BC848, BC849 5
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current –IEM 200 mA
Power Dissipation at TSB = 50°CP
tot 310(1) mW
Thermal Resistance Junction to Ambiant Air RθJA 450(1) °C/W
Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
Note: (1) Device on fiberglass substrate, see layout on third page.
BC846 thru BC849
Small Signal Transistors (NPN)
10/2/01
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Features
• NPN Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
• These transistors are subdivided into three groups (A, B,
and C) according to their current gain. The type BC846 is
available in groups A and B, however, the types BC847 and
BC848 can be supplied in all three groups. The BC849 is a
low noise type available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are recommended.
TO-236AB (SOT-23)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Dimensions in inches
and (millimeters)
Mounting Pad Layout
Type Marking
BC846A 1A
B1B
BC847A 1E
B1F
C1G
Type Marking
BC848A 1J
B1K
C1L
BC849B 2B
C2C
Pin Configuration
1= Base
2= Emitter
3= Collector
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Small Signal Current Gain
Current Gain Group A VCE = 5V, IC= 2mA —220 ——
Bh
fe f = 1kHz —330 ——
C—600 ——
Input Impedance Current Gain Group A VCE = 5V, IC= 2mA 1.6 2.7 4.5
Bh
ie f = 1kHz 3.2 4.5 8.5 kΩ
C 6.0 8.7 15.0
Output Admittance Current Gain Group A VCE = 5V, IC = 2mA —18 30
Bh
oe f = 1kHz —30 60 µS
C—60 110
Reverse Voltage Transfer Ratio
Current Gain Group A VCE = 5 V, IC = 2mA —1.5 ⋅ 10-4 ——
Bh
re f = 1kHz —2 ⋅ 10-4 ——
C—3 ⋅ 10-4 ——
DC Current Gain Current Gain Group A hFE VCE = 5V, IC= 10µA—90 ——
B—150 ——
C—270 ——
Current Gain Group A hFE VCE = 5V, IC= 2mA 110 180 220 —
B 200 290 450 —
C 420 520 800 —
Collector Saturation Voltage VCEsat IC= 10mA, IB= 0.5mA —90 250 mV
IC= 100mA, IB= 5mA —200 600
Base Saturation Voltage VBEsat IC= 10mA, IB= 0.5mA —700 —mV
IC= 100mA, IB= 5mA —900 —
Base-Emitter Voltage VBEon VCE = 5V, IC= 2mA 580 660 700 mV
VCE = 5V, IC= 10mA ——770
Collector-Base Cutoff Current ICBO VCB = 30V ——15 nA
VCB = 30V, TJ= 150˚C—— 5µA
Gain-Bandwidth Product fTVCE = 5V, IC = 10mA —300 —MHz
f = 100MHz
Collector-Base Capacitance CCBO VCB = 10V, f = 1MHz —3.5 6 pF
Emitter-Base Capacitance CEBO VEB = 0.5V, f = 1MHz —9—pF
BC846, BC847, BC848 VCE = 5V, IC= 200µA—210dB
Noise Figure BC849 FRG=2kΩ,f=1kHz, ∆f=200Hz —1.2 4 dB
BC849 VCE = 5V, IC= 200µA—1.4 4 dB
RG=2kΩ,f=30...15000Hz
Note: (1) Device on fiberglass substrate, see layout on next page
BC846 thru BC849
Small Signal Transistors (NPN)
0.59 (15)
0.2 (5)
0.03 (0.8 )
0.30 (7.5 )
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches (millimeters)
Layout for RΘJA test
Thickness:
Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
Admissible power dissipation
versus temperature of substrate backside
Device on fiblerglass substrate, see layout
Pulse thermal resistance
versus pulse duration (normalized)
Device on fiblerglass substrate, see layout
DC current gain versus collector current Collector-Base cutoff current versus
ambient temperature
BC846 thru BC849
Small Signal Transistors (NPN)
BC846 thru BC849
Small Signal Transistors (NPN)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC846 thru BC849
Small Signal Transistors (NPN)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
