© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
IXFK IXFN
VDSS TJ= 25°C to 150°C 300 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ300 300 V
VGS Continuous ±20 ±20 V
VGSM Transient ± 3 0 ± 3 0 V
ID25 TC= 25°C 73 73 A
IDM TC= 25°C, pulse width limited by TJM 292 292 A
IAR TC= 25°C 40 40 A
EAR TC= 25°C 30 30 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 5 V/ns
TJ≤ 150°C, RG = 2 W
PDTC= 25°C 500 520 W
TJ-55 ... +150 ° C
TJM 150 ° C
Tstg -55 ... +150 ° C
TL1.6 mm (0.063 in) from case for 10 s 300 - ° C
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~
IISOL ≤ 1 mA t = 1 s - 3000 V~
MdMounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
lInternational standard packages
lJEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
lminiBLOC with Aluminium nitride
isolation
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
lFast intrinsic Rectifier
Applications
lDC-DC converters
lSynchronous rectification
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lTemperature and lighting controls
lLow voltage relays
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 300 V
VGS(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = 0.8 VDSS TJ = 25°C 400 uA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 45 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)
S
GD
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92805J (11/01)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
E153432 E153432
E153432 E153432
E153432
(TAB)
VDSS ID25 RDS(on)
IXFK 73 N 30 300 V 73 A 45 mΩΩ
ΩΩ
Ω
IXFN 73 N 30 300 V 73 A 45 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
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