SQJ940EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.0160 0.0064 RDS(on) () at VGS = 4.5 V 0.0188 0.0076 ID (A) 15 Configuration 18 Dual N * * * * TrenchFET(R) Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK(R) SO-8L Asymmetric 5.1 D1 D2 3m m m .15 m 6 D2 G1 G2 D1 4 G2 3 S2 2 G1 S1 1 S1 S2 N-Channel 1 MOSFET Bottom View N-Channel 2 MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Dual Asymmetric Lead (Pb)-free and Halogen-free SQJ940EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage VDS 40 40 Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID 20 15 18 15 10.5 IS 15 39 IDM 60 72 IAS 20.5 35.5 EAS 21 63 48 43 16 14 PD TJ, Tstg - 55 to + 175 Soldering Recommendations (Peak Temperature)e, f UNIT V A mJ W C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 70 70 RthJC 3.3 3.5 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) IGSS IDSS ID(on) RDS(on) VGS = 0 V, ID = 250 A N-Ch 1 40 - - VGS = 0 V, ID = 250 A N-Ch 2 40 - - VDS = VGS, ID = 250 A N-Ch 1 1.5 2 2.5 VDS = VGS, ID = 250 A N-Ch 2 1.5 2 2.5 N-Ch 1 - - 100 N-Ch 2 - - 100 VDS = 0 V, VGS = 20 V VGS = 0 V VDS 40 V N-Ch 1 - - 1 VGS = 0 V VDS = - 40 V N-Ch 2 - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C N-Ch 1 - - 50 VGS = 0 V VDS = 40 V, TJ = 125 C N-Ch 2 - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C N-Ch 1 - - 150 VGS = 0 V VDS = 40 V, TJ = 175 C N-Ch 2 - - 150 VGS = 10 V VDS 5 V N-Ch 1 30 - - VGS = 10 V VDS 5 V N-Ch 2 30 - - VGS = 10 V ID = 15 A N-Ch 1 - 0.0133 0.0160 VGS = 10 V ID = 20 A N-Ch 2 - 0.0053 0.0064 VGS = 10 V ID = 15 A, TJ = 125 C N-Ch 1 - - 0.0270 VGS = 10 V ID = 20 A, TJ = 125 C N-Ch 2 - - 0.0105 VGS = 10 V ID = 15 A, TJ = 175 C N-Ch 1 - - 0.0334 - 0.0130 VGS = 10 V ID = 20 A, TJ = 175 C N-Ch 2 - VGS = 4.5 V ID = 13 A N-Ch 1 - 0.0157 0.0188 VGS = 4.5 V ID = 18 A 0.0063 0.0076 gfs N-Ch 2 - VDS = 15 V, ID = 15 A N-Ch 1 - 64 - VDS = 15 V, ID = 20 A N-Ch 2 - 102 - V nA A A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 717 896 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 1850 2313 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 118 148 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 272 340 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 48 60 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 98 123 VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 13.5 20 VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 2 - 31.8 48 VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 2.24 - VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 2 - 5.5 - VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 2.06 - VGS = 10 V VDS = 20 V, ID = 16 A Rg f = 1 MHz N-Ch 2 - 4.7 - N-Ch 1 1.2 2.52 5 N-Ch 2 3 7.93 13 pF nC Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER Turn-On Delay SYMBOL Timec Rise Timec Turn-Off Delay Timec Fall Timec td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. N-Ch 1 - 4.8 7.2 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 7.7 11.6 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 9.3 14 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 9.5 14.3 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 15.6 23.4 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 47 70 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 4.9 7.4 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 13.5 20.3 N-Ch 1 - - 60 N-Ch 2 - - 72 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 UNIT ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 8 A, VGS = 0 V N-Ch 1 - 0.8 1.2 IF = 17 A, VGS = 0 V N-Ch 2 - 0.8 1.2 A V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 10 30 TC = 25 C 20 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 75 8 60 6 4 5 Transfer Characteristics gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 C TC = 125 C 10 VGS = 3 V TC = 25 C 2 TC = - 55 C TC = 25 C 45 TC = 125 C 30 15 TC = 125 C TC = - 55 C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 2 4 6 ID - Drain Current (A) 0.05 1200 0.04 960 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 10 32 40 Transconductance C - Capacitance (pF) RDS(on) - On-Resistance () Transfer Characteristics 8 Ciss 720 480 240 Coss Crss 0 0 0 8 16 24 32 40 0 8 16 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 10 2.0 ID = 14 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 6 4 2 1.7 1.4 3 6 9 12 VGS = 4.5 V 1.1 0.8 0.5 - 50 0 0 VGS = 10 V 15 - 25 Qg - Total Gate Charge (nC) 150 175 On-Resistance vs. Junction Temperature Gate Charge 100 0.10 10 0.08 RDS(on) - On-Resistance () IS - Source Current (A) 0 25 50 75 100 125 TJ - Junction Temperature (C) TJ = 150 C 1 0.1 TJ = 25 C 0.01 0.06 0.04 TJ = 25 C 0.02 TJ = 150 C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 0.5 52 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.2 - 0.1 ID = 5 mA - 0.4 ID = 250 A - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 125 150 175 50 48 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (C) TJ - Junction Temperature (C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) ID - Drain Current (A) 100 IDM Limited 10 1 ms ID Limited 1 Limited by RDS(on)* 0.1 10 ms 100 ms, 1 s, 10 s, DC BVDSS Limited TC = 25 C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 10 30 TC = 25 C 20 TC = 125 C 10 TC = - 55 C VGS = 3 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 10 150 TC = - 55 C gfs - Transconductance (S) 8 ID - Drain Current (A) TC = 25 C 125 6 TC = 25 C 4 2 100 75 TC = 125 C 50 25 TC = 125 C TC = - 55 C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 4 Transfer Characteristics 12 16 20 Transconductance 0.025 3000 0.020 2400 C - Capacitance (pF) RDS(on) - On-Resistance () 8 ID - Drain Current (A) 0.015 0.010 VGS = 4.5 V 0.005 Ciss 1800 1200 600 VGS = 10 V Coss Crss 0.000 0 0 10 20 30 ID - Drain Current (A) 40 On-Resistance vs. Drain Current S13-0567-Rev. A, 18-Mar-13 50 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62767 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 7 14 21 28 35 1.4 VGS = 4.5 V 1.1 0.8 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (C) 150 175 On-Resistance vs. Junction Temperature Gate Charge 100 0.05 10 0.04 RDS(on) - On-Resistance () IS - Source Current (A) VGS = 10 V 1.7 0.5 - 50 - 25 0 0 ID = 14 A TJ = 150 C 1 0.1 TJ = 25 C 0.01 0.03 0.02 TJ = 25 C 0.01 TJ = 150 C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 52 0.5 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.2 - 0.1 ID = 5 mA - 0.4 ID = 250 A - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 125 150 175 50 48 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (C) TJ - Junction Temperature (C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 1 ms 10 10 ms 100 ms, 1 s, 10 s, DC 1 BVDSS Limited 0.1 Limited by RDS(on)* TC = 25 C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 10 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ940EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62767. S13-0567-Rev. A, 18-Mar-13 Document Number: 62767 11 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Assymetric Case Outline b2 D5 K1 D4 D3 D2 A1 b b1 e D1 b3 K2 0.25 gauge line D PIN 1 PIN 1 DIM. A A1 b b1 b2 b3 c D D1 D2 D3 D4 D5 e E E1 E2 E3 F L L1 K K1 K2 W W1 W2 W3 W4 DWG: 6009 MIN. 1.00 0.00 0.33 0.44 4.80 0.04 0.20 5.00 4.80 3.63 0.81 1.98 1.47 1.20 6.05 4.27 2.75 1.89 0.05 0.62 0.92 0.41 0.64 0.54 0.13 0.31 2.72 2.86 0.41 5 MILLIMETERS NOM. 1.07 0.06 0.41 0.51 4.90 0.12 0.25 5.13 4.90 3.73 0.91 2.08 1.57 1.27 6.15 4.37 2.85 1.99 0.12 0.72 1.07 0.51 0.74 0.64 0.23 0.41 2.82 2.96 0.51 10 MAX. 1.14 0.13 0.48 0.58 5.00 0.20 0.30 5.25 5.00 3.83 1.01 2.18 1.67 1.34 6.25 4.47 2.95 2.09 0.19 0.82 1.22 0.61 0.84 0.74 0.33 0.51 2.92 3.06 0.61 12 MIN. 0.039 0.000 0.013 0.017 0.189 0.002 0.008 0.197 0.189 0.143 0.032 0.078 0.058 0.047 0.238 0.168 0.108 0.074 0.002 0.024 0.036 0.016 0.025 0.021 0.005 0.012 0.107 0.113 0.016 5 INCHES NOM. 0.042 0.003 0.016 0.020 0.193 0.005 0.010 0.202 0.193 0.147 0.036 0.082 0.062 0.050 0.242 0.172 0.112 0.078 0.005 0.028 0.042 0.020 0.029 0.025 0.009 0.016 0.111 0.117 0.020 10 MAX. 0.045 0.005 0.019 0.023 0.197 0.008 0.012 0.207 0.197 0.151 0.040 0.086 0.066 0.053 0.246 0.176 0.116 0.082 0.007 0.032 0.048 0.024 0.033 0.029 0.013 0.020 0.115 0.120 0.024 12 Note * Millimeters will govern Document Number: 62714 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C14-0057-Rev. D, 07-Apr-14 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK(R) SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQJ940EP-T1-GE3 SQJ940EP-T1_GE3