SQJ940EP
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Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
FEATURES
•TrenchFET
® Power MOSFET
• AEC-Q101 Qualifiedd
•100 % R
g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V) 40 40
RDS(on) () at VGS = 10 V 0.0160 0.0064
RDS(on) () at VGS = 4.5 V 0.0188 0.0076
ID (A) 15 18
Configuration Dual N
Bottom View
D1
D2
1
2
3
4
S1
G1
S2
G2
6.15mm
5.13mm
PowerPAK® SO-8L Asymmetric
N-Channel 1 MOSFET
D1
G1
S1
N-Channel 2 MOSFET
D2
G2
S2
ORDERING INFORMATION
Package PowerPAK SO-8L Dual Asymmetric
Lead (Pb)-free and Halogen-free SQJ940EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-Source Voltage VDS 40 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentaTC = 25 °C ID
15 18
A
TC = 125 °C 15 10.5
Continuous Source Current (Diode Conduction)aIS15 39
Pulsed Drain CurrentbIDM 60 72
Single Pulse Avalanche Current L = 0.1 mH IAS 20.5 35.5
Single Pulse Avalanche Energy EAS 21 63 mJ
Maximum Power DissipationbTC = 25 °C PD
48 43 W
TC = 125 °C 16 14
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature)e, f 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-Ambient PCB MountcRthJA 70 70 °C/W
Junction-to-Case (Drain) RthJC 3.3 3.5
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS
VGS = 0 V, ID = 250 μA N-Ch 1 40 - -
V
VGS = 0 V, ID = 250 μA N-Ch 2 40 - -
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 μA N-Ch 1 1.5 2 2.5
VDS = VGS, ID = 250 μA N-Ch 2 1.5 2 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V N-Ch 1 - - ± 100 nA
N-Ch 2 - - ± 100
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS 40 V N-Ch 1 - - 1
μA
VGS = 0 V VDS = - 40 V N-Ch 2 - - 1
VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 1 - - 50
VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 2 - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 1 - - 150
VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 2 - - 150
On-State Drain Currenta I
D(on) VGS = 10 V VDS 5 V N-Ch 1 30 - - A
VGS = 10 V VDS 5 V N-Ch 2 30 - -
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 15 A N-Ch 1 - 0.0133 0.0160
VGS = 10 V ID = 20 A N-Ch 2 - 0.0053 0.0064
VGS = 10 V ID = 15 A, TJ = 125 °C N-Ch 1 - - 0.0270
VGS = 10 V ID = 20 A, TJ = 125 °C N-Ch 2 - - 0.0105
VGS = 10 V ID = 15 A, TJ = 175 °C N-Ch 1 - - 0.0334
VGS = 10 V ID = 20 A, TJ = 175 °C N-Ch 2 - - 0.0130
VGS = 4.5 V ID = 13 A N-Ch 1 - 0.0157 0.0188
VGS = 4.5 V ID = 18 A N-Ch 2 - 0.0063 0.0076
Forward Transconductancebgfs
VDS = 15 V, ID = 15 A N-Ch 1 - 64 - S
VDS = 15 V, ID = 20 A N-Ch 2 - 102 -
Dynamicb
Input Capacitance Ciss VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 717 896
pF
VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 1850 2313
Output Capacitance Coss VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 118 148
VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 272 340
Reverse Transfer Capacitance Crss VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 48 60
VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 98 123
Total Gate ChargecQg VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 13.5 20
nC
VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 2 - 31.8 48
Gate-Source ChargecQgs VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 2.24 -
VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 2 - 5.5 -
Gate-Drain ChargecQgd VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 1 - 2.06 -
VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 2 - 4.7 -
Gate Resistance Rg f = 1 MHz N-Ch 1 1.2 2.52 5
N-Ch 2 3 7.93 13
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Turn-On Delay Timectd(on)
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 4.8 7.2
ns
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 7.7 11.6
Rise Timectr
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 9.3 14
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 9.5 14.3
Turn-Off Delay Timectd(off)
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 15.6 23.4
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 47 70
Fall Timectf
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 4.9 7.4
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 13.5 20.3
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM
N-Ch 1 - - 60 A
N-Ch 2 - - 72
Forward Voltage VSD
IF = 8 A, VGS = 0 V N-Ch 1 - 0.8 1.2 V
IF = 17 A, VGS = 0 V N-Ch 2 - 0.8 1.2
SQJ940EP
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
10
20
30
40
50
0 2 4 6 8 10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
VGS = 3 V
0
2
4
6
8
10
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0
0.01
0.02
0.03
0.04
0.05
0 8 16 24 32 40
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
10
20
30
40
50
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
T
C
= 125 °C
TC = 25 °C
0
15
30
45
60
75
0 2 4 6 8 10
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 125 °C
TC = - 55 °C
TC = 25 °C
0
240
480
720
960
1200
0 8 16 24 32 40
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
C
oss
Crss
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 3 6 9 12 15
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ - Temperature (°C)
ID = 250 μA
ID = 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 14 A
VGS = 4.5 V
VGS = 10 V
0.00
0.02
0.04
0.06
0.08
0.10
0246810
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
40
42
44
46
48
50
52
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS(on)*
1 ms
I
DM
Limited
TC = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms, 1 s, 10 s, DC
ID Limited
10-
3
10-
2
1 10 60010-
1
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 85 °C/W
3. T JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
10-
3
10-
2
10-
1
10-
4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.02
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
10
20
30
40
50
0 2 4 6 8 10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
VGS = 3 V
0
2
4
6
8
10
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = - 55 °C
T
C
= 125 °C
0.000
0.005
0.010
0.015
0.020
0.025
0 10 20 30 40 50
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
10
0
20
30
40
50
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
TC = 125 °C
TC = 25 °C
0
25
50
75
100
125
150
0 4 8 12 16 20
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 125 °C
TC = - 55 °C
TC = 25 °C
0
600
1200
1800
2400
3000
0 8 16 24 32 40
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
SQJ940EP
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 7 14 21 28 35
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ - Temperature (°C)
ID = 250 μA
ID = 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 14 A
VGS = 4.5 V
VGS = 10 V
0.00
0.01
0.02
0.03
0.04
0.05
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
40
42
44
46
48
50
52
- 50 - 25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
ID = 1 mA
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS(on)*
1 ms
IDM Limited
TC = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms, 1 s, 10 s, DC
10-
3
10-
2
1 10 60010-
1
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 85 °C/W
3. T JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62767.
10-310-210-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.02
Package Information
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C14-0057-Rev. D, 07-Apr-14 1Document Number: 62714
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PowerPAK® SO-8L Assymetric Case Outline
Note
• Millimeters will govern
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 0.06 0.13 0.000 0.003 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.04 0.12 0.20 0.002 0.005 0.008
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.63 3.73 3.83 0.143 0.147 0.151
D3 0.81 0.91 1.01 0.032 0.036 0.040
D4 1.98 2.08 2.18 0.078 0.082 0.086
D5 1.47 1.57 1.67 0.058 0.062 0.066
e 1.20 1.27 1.34 0.047 0.050 0.053
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
E3 1.89 1.99 2.09 0.074 0.078 0.082
F 0.05 0.12 0.19 0.002 0.005 0.007
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.41 0.51 0.61 0.016 0.020 0.024
K1 0.64 0.74 0.84 0.025 0.029 0.033
K2 0.54 0.64 0.74 0.021 0.025 0.029
W 0.13 0.23 0.33 0.005 0.009 0.013
W1 0.31 0.41 0.51 0.012 0.016 0.020
W2 2.72 2.82 2.92 0.107 0.111 0.115
W3 2.86 2.96 3.06 0.113 0.117 0.120
W4 0.41 0.51 0.61 0.016 0.020 0.024
θ5° 10° 12° 5° 10° 12°
DWG: 6009
PIN 1
PIN 1
0.25 gauge line
b3 K2
A1
K1
D4 D3
D5
b2
D1
D
e
D2
bb1 θ
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 07-Mar-13 1Document Number: 64477
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC
Recommended Minimum Pads
Dimensions in mm [inches]
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Revision: 08-Feb-17 1Document Number: 91000
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