ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRSM = 4000 V
IF(AV)M = 5200 A
IF(RMS) = 8200 A
IFSM = 85×103A
VF0 =0.8V
rF= 0.086 mΩ
ΩΩ
Ω
Rectifier Diode
5SDD 54N4000
Doc. No. 5SYA1171-00 Dec. 03
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•Patented free-floating silicon technology
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•Very low on-state losses
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•Optimum pow er handling capability
Blocking
Maximum rated values 1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = 0...150°C 3600 V
Non - repetitive peak reverse voltage VRSM f = 5 Hz, tp = 10ms, Tj = 0...150°C 4000 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current IRRM VRRM, Tj = 150°C 400 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.8 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 35.9 mm
Surface creepage distance DS56 mm
Air strike distance Da22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-00 Dec . 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Max. average on-state
current IF(AV)M 50 Hz, Half sine wave, TC = 85 °C5200 A
Max. RMS on-state current IF(RMS) 8200 A
Max. peak non-repetitive
surge current IFSM 85×103A
Limiting load integral I2t
tp = 10 ms, Tj = 150°C,
VR = 0 V 36.3×106A2s
Max. peak non-repetitive
surge current IFSM 90×103A
Limiting load integral I2t
tp = 8.3 ms, Tj = 150°C,
VR = 0 V 34.6×106A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VFIF = 5000 A, Tj = 150°C1.23 V
Threshold voltage V(T0) 0.8 V
Slope resistance rT
Tj = 150°C
IT = 2500...7500 A 0.086 mΩ
Switching
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr diF/dt = -10 A/µs, VR = 200 V
IFRM = 4000 A, Tj = 150°C18000 µAs
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-00 Dec . 03 page 3 of 6
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range Tvj 0 150 °C
Storage temperature range Tstg -40 150 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 81...108 kN 5.7 K/kW
Rth(j-c)A Anode-side cooled
Fm = 81...108 kN 11.4 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 81...108 kN 11.4 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 81...108 kN 1K/kW
Rth(c-h) Single-side cooled
Fm = 81...108 kN 2K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Zn
1i
t/-
ith c)-th(j ∑
=
i
τ
i1234
Rth i(K/kW) 3.728 1.248 0.433 0.292
τi(s) 0.8115 0.1014 0.0089 0.0015
Fig. 1 Transient thermal impedance junction-to-
case.
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-00 Dec . 03 page 4 of 6
Max. on-state characteristic model:
VF25 FTvjFTvjFTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IF = 300 – 110000 A
Max. on-state characteristic model:
VF150 FTvjFTvjFTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IF = 300 – 110000 A
A25 B25 C25 D25 A150 B150 C150 D150
486.40×10-3 45.53×10-6 65.82×10-3 68.19×10-15 22.00×10-3 49.09×10-6 113.10×10-3 -20.75×10-15
Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics
Fig. 4 On-state power losses vs average on-state
current. Fig. 5 Max. permissible case temperature vs
average on-state current.
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-00 Dec . 03 page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave. Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 8 Recovery charge vs. decay rate of on-state
current. Fig. 9 Peak reverse recovery current vs. decay rate
of on-state current.
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1171-00 Dec. 03
Semiconductors
Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Related application notes:
Doc. Nr Titel
5SYA 2020 Design of RC-Snubbers for Phase Control Applicat ions
5SYA 2029 Designing Large Rectifiers with High Power Diodes
5SYA 2036 Recommendat ions regarding mec hanical clamping of Press Pack High Power Semic onduc tors
Please re fer to http://www.abb.com/semiconductors for actual versions.
