TQM 7M4009 (Preliminary data sheet) 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology and advanced assembly techniques. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are fully CMOS compatible 7M4009 USA C352 A213505 .25 Gnd. DCS-Vcc2 Gnd. 2.85 x 2.85 Description: 20 19 18 17 Gnd. 2 15 Gnd. Vapc 3 14 Gnd. Vbs 4 13 Gnd. Gnd. 5 12 Gnd. GSM-in 6 7 8 9 10 Gnd. 1 GSM-Vcc2 DCS-in GSM-Vcc1 The module is built around a highly integrated dual power amplifier InGaP die. By virtue of advanced design techniques, exceptional performance is achieved with only two stages in each amplifier. On-die interstage matching is employed using a high Q passives technology. Together these technologies allow an extremely compact size to be achieved with excellent electrical performance. The module includes a CMOS die to implement a band-select function and to provide a CMOS compatible input power control voltage range. The module has a band select input. Excellent performance is achieved across the 824 - 849 MHz, 880 - 915 MHz, 1710 - 1785 MHz, and 1850 - 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate. .75 DCS-Vcc1 Features: -- Extremely compact size - 6x6x1.4 mm3 . -- Band select, and single Vapc CMOS compatible power control input. -- High efficiency - typical GSM850 47% , GSM900 55%, DCS/PCS 50%. -- GPRS class 12. -- +2 dBm min. input. -- 50 ? input and output impedances. -- High-reliability InGaP technology. -- Few external components. TQS Gnd. Description: 16 DCS-out 11 GSM-out Dimensions in mm Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice 1 Absolute Maximum Ratings: Parameter Symbol Min. Max. Units Vbat Ibat Vramp ? VSWR Tc -0.5 6.0 Vdc A V % -30 2.4 3.0 50 10:1 100 C Ts Pin -55 150 C 15 dBm Supply voltage DC supply current Power control voltage Duty cycle at max. power Output load Operating case temperature Storage temperature Input power -0.5 Note: The amplifier will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. Operating Parameters: Parameter Supply voltage Supply current Band select voltage GSM DCS/PCS Leakage current Txen Low, Vramp = 0.19V Load impedances Symbol Min. Typ. Max. Units Vbat Ibat Vbs-L Vbs-H Il 2.9 3.5 1.6 4.5 Vdc A V Z0 0.0 2.0 1 0.5 3.0 20 50 ?A ? Typical Performance: Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice 2 GSM850 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vapc = 1.8 V, Pin = 4 dBm, Duty Cycle =25%, Tc = 25C Parameter Frequency Range Input Power for Pout max. Output Power Symbol Min. f Pin Pout 824 2.0 33.0 4.0 34.5 31.0 32.6 47 Power Added Efficiency ? 40 Power Control Voltage Vapc 0.2 Power Control Current Power Control Slope Iapc Pout/Vapc Typ. Max. Units 849 6.0 MHz dBm dBm Vbat = 2.9 V % 1.8 Forward Isolation Harmonics 0.1 mA 80 150 dB/V -35.0 3f0 -7.0 > 3f 0 -7.0 Rx noise power: 925 - 935 MHz 935 - 960 MHz Stability Ruggedness -7.0 -74.0 -82.0 8:1 10:1 Pout = Pout max. 7.5 < Pout ? 35.5 -10 < Pout ? 7.5 -34.5 < Pout ? -10 -3 ? Pout ? 34.5 dBm 3.0:1 Iso 2f0 TCmin ? TC ? ?TCmax dBm dBm Vapc ? 0.2 V, Pin = -5 dBm TCmin Pout ? 34.5 dBm ? TC ? ?TCmax dBm RBW = 100 kHz Pout ? 34.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice TCmin ? TC ???TCmax V 200 Input VSWR Conditions 3 GSM900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vapc = 1.8 V, Pin = 4 dBm, Duty Cycle =25%, Tc = 25C Parameter Frequency Range Input Power for Pout max. Output Power Symbol Min. f Pin Pout 880 2.0 34.5 4.0 35.0 32.0 33.5 55 Power Added Efficiency ? 50 Power Control Voltage Vapc 0.2 Power Control Current Power Control Slope Iapc Pout/Vapc Typ. Max. Units 915 6.0 MHz dBm dBm Vbat = 2.9 V % 1.8 0.1 mA 80 150 dB/V Forward Isolation Iso -35.0 dBm Cross-band Isolation Harmonics Iso 2f0 -13.0 dBm dBm 3f0 -7.0 > 3f 0 -7.0 Rx noise power: 925 - 935 MHz 935 - 960 MHz Stability Ruggedness -74.0 -82.0 8:1 dBm 10:1 Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice Pout = Pout max. 7.5 < Pout ? 35.5 -10 < Pout ? 7.5 -34.5 < Pout ? -10 -3 ? Pout ? 34.5 dBm 2.5:1 -7.0 TCmin ? TC ???TCmax V 200 Input VSWR Conditions TCmin ? TC ? ?TCmax Vapc ? 0.2 V, Pin = -5 dBm Pout ? 34.5 dBm Pout ? 34.5 dBm TCmin ? TC ? ?TCmax RBW = 100 kHz Pout ? 34.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm 4 DCS1800/PCS1900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vapc = 1.8 V, Pin = 4 dBm, Duty Cycle = 25%, Tc = 25C Parameter Frequency Range Symbol Min. f 1710 1850 2.0 32.0 29.5 4.0 32.5 31.0 45 50 Input Power for Pout max. Output Power Pin Pout Power Added Efficiency ? Power Control Voltage Power Control Current Power Control Slope Vapc Iapc Pout/Vapc Input VSWR Forward Isolation Harmonics 0.2 Typ. Max. Units 1785 1910 6.0 MHz dBm dBm Vbat = 2.9 V % 1.8 0.1 80.0 150.0 200.0 V mA dB/V 3.0:1 Iso 2f 0 -7.0 3f 0 -7.0 > 3f 0 -7.0 Rx noise power 1805 - 1880 MHz Conditions -35 -76.0 Stability 8:1 Ruggedness 10:1 dBm dBm dBm Pout = Pout max. TCmin 7.5 < Pout ? 32.5 ? TC ? -10 < Pout ? 7.5 ?TCmax -34.5 < Pout ? -10 -3 ? Pout ? 32.5 dBm Vapc ? 0.2 V, P?? = -5 dBm TCmin Pout ? 32.5 dBm ? TC ? ?TCmax RBW = 100 kHz Pout ? 32.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm All phase angles Vapc ? 1.8 V Pin = 4 dBm, Pout ? 34.5 dBm Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice TCmin ? TC?? TCmax 5 Pin Out: DCS/PCS -Vcc1 Gnd. DCS/PCS -Vcc2 Gnd. Top view 20 19 18 17 DCS/PCS-in 1 Gnd. 2 15 Gnd. Vapc 3 14 Gnd. Vbs 4 13 Gnd. Gnd. 5 12 Gnd. Cell/GSM-in 6 9 Pin Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 RFin - DCS/PCS Gnd. Vapc Vbs Gnd. RFin - GSM Gnd. Vcc 1 - GSM Vcc 2 - GSM Gnd. RFout - GSM Gnd. Gnd. Gnd. Gnd. RFout - DCS/PCS 18 19 20 10 11 Cell/GSM-out Gnd. 8 Cell/GSM -Vcc1 Cell/GSM -Vcc2 Gnd. 7 16 DCS/PCS-out Description DCS/PCS power in Control voltage Band select voltage GSM power in GSM stage 1 input voltage GSM stage 2 input voltage GSM power out DCS/PCS power out Gnd. Vcc 2 - DCS/PCS DCS/PCS stage 2 input voltage Gnd. Vcc 1 - DCS/PCS DCS/PCS stage 1 input voltage Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice 6 Schematic: Vcc1 Pin DCS/PCS Input Match Vcc2 Interstage Match Output Match Pout DCS/PCS Output Match Pout Cell/GSM ESD Vapc Vapc and Band Select ASIC Vbs ESD Pin Cell/GSM Input Match Interstage Match Vcc1 Vcc2 Copyright (c) 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818) All specifications subject to change without notice 7