Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3960UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3960UBJ)
• JANTX level (2N3960UBJX)
• JANTXV level (2N3960UBJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power switching transistor
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0003
• Reference document:
MIL-PRF-19500/399
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 12
Volts
Collector-Base Voltage VCBO 20
Volts
Emitter-Base Voltage VEBO 4.5
Volts
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 400
2.3
mW
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3960UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 µA 12
Volts
Collector-Base Cutoff Current ICBO V
CB = 20 Volts 10 µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
ICEX3
VCE = 10Volts, VBE = 0.4Volts
VCE = 10Volts, VBE = 2 Volts
VCE = 10Volts, VBE = 2 Volts,
TA = 150°C
1
5
5
µA
nA
µA
Emitter-Base Cutoff Current IEBO V
EB = 4.5 Volts 10 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
40
60
30
30
300
Base-Emitter Voltage VBE1
VBE2
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 30 mA
0.8
1.0 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 1 mA, IB = 0.1 mA
IC = 30 mA, IB = 3 mA
0.2
0.3 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|1
|hFE|2
|hFE|3
f = 100 MHz
VCE = 4 Volts, IC = 5 mA,
VCE = 4 Volts, IC = 10 mA,
VCE = 4 Volts, IC = 30 mA,
13
14
12
Open Circuit Output Capacitance COBO VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 2.5
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 2.5
pF
