A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TA = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA
RBE = 330 Ω20
25 V
BVCBO IC = 100 µA35 V
BVEBO IE = 100 µA2.5 V
ICBO VCB = 15 V 100 µ
µµ
µA
hFE VCB = 10 V IC = 50 mA 40 200 ---
ftVCB = 15 V IC = 50 mA f = 200 MHz 2700 MHz
COB VCB = 10 V f = 1.0 MHz 3.0 pF
GPE
NF
IP3
VCB = 15 V IC = 50 mA f = 500 MHz 11.5 4.0
+33
dB
dB
dBm
NPN SILICON HIGH FREQUENCY TRANSISTOR
MRF517
DESCRIPTION:
The ASI MRF517 is Designed for
High Linearit y Class A Amplifier
Applications in the 100 to 500 MHz
Frequency Range.
MAXIMUM RATINGS
IC150 mA
VCBO 35 V
PDISS 2.5 W @ T C = 50 OC
20 mW/OC @ TC = 50 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 50 OC/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE )
