LT2N7002E N-Channel Power MOSFET - ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power Simple Drive Requirement field effect transistors are produced using high cell density , DMOS Small Package Outline trench technology. This high density process is especially tailored to ROHS Compliant minimize on-state resistance. These devices are particularly suited ESD Rating = 2000V HBM for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits Mechanical data where high-side switching , and low in-line power loss are needed in High density cell design for low RDS(ON) a very small outline surface mount package. Voltage controlled small signal switching. Rugged and reliable. High saturation current capability. High-speed switching. Not thermal runaway. The soldering temperature and time shall not exceed 260 for more than 10 seconds. PIN CONFIGURATION (SOT-23) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 300 mA Pulsed Drain Current (Note 1) IDM 2000 mA PD @TA=25C 0.35 PD @TA=75C 0.21 TJ, Tstg -55 ~ 150 C RJA 357 C/W Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) (Note 2) Rev 0. Nov. 2007 W 01 LT2N7002E N-Channel Power MOSFET - ESD Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter Limit BVDSS Drain-Source Breakdown Voltage VGS=0, ID=10uA 60 - - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 - 2.5 V gfs Forward Transconductance VDS=15V, ID=250mA 100 - - mS IGSS Gate Body Leakage VGS= 20V , VDS=0V - - 10 uA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V - - 1 uA VGS=10V, ID=500mA - - 3 VGS=4.5V, ID=200mA - - 4 - - 0.8 - - 20 RDS(ON) Drain-Source On-State Resistance Min. Typ. Max. Unit Dynamic Qg Total Gate Charge Td(on) Turn-on Time ID=200mA , VDS=15V VGS=4.5V VDD=30V , RL=150, nC nS ID=200mA , VGEN=10V Td(off) Turn-off Time RG=10 - - 40 Ciss Input Capacitance VGS=0V - - 35 Coss Output Capacitance VDS=25V - - 10 Crss Reverse Transfer Capacitance f=1.0MHz - - 5 pF Source-Drain Diode Symbol VSD Parameter Limit Diode Forward Voltage IS=200mA, VGS=0V Min. - Typ. Max. Unit 0.82 1.3 V Notes 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t 5sec. Rev 0. Nov. 2007 02 LT2N7002E N-Channel Power MOSFET - ESD Typical Characteristics (TJ =25 Noted) Rev 0. Nov. 2007 03 LT2N7002E N-Channel Power MOSFET - ESD SOT-23 Package Outline DIM MILLIMETERS MIN MAX A 2.70 3.1 B 1.20 1.6 C 0.9 1.3 D 0.35 0.50 G 1.70 2.10 H 0.013 0.15 J 0.085 0.2 K 0.45 0.7 L 0.89 1.02 S 2.20 2.80 V 0.45 0.60 Body Marking Code K72 Rev 0. Nov. 2007 04