N-Channel Power MOSFET
–
ESD
LT2N7002E
01
Rev 0. Nov. 2007
GENERAL DESCRIPTION
The LT2N7002E is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
FEATURES
● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM
Mechanical data
● High density cell design for low RDS(ON)
● Voltage controlled small signal switching.
● Rugged and reliable.
● High saturation current capability.
● High-speed switching.
● Not thermal runaway.
● The soldering temperature and time shall
not exceed 260℃ for more than 10 seconds.
PIN CONFIGURATION
(SOT-23)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 300 mA
Pulsed Drain Current (Note 1) IDM 2000 mA
PD @TA=25°C 0.35
Maximum Power Dissipation
PD @TA=75°C 0.21
W
Operating Junction and Storage Temperature Range TJ, Tstg -55 ~ 150 °C
Junction-to-Ambient Thermal Resistance
(PCB mounted) (Note 2) RθJA 357 °C/W
N-Channel Power MOSFET
–
ESD
LT2N7002E
02
Rev 0. Nov. 2007
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol Parameter Limit Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0, ID=10uA 60 - - V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 - 2.5 V
gfs Forward Transconductance VDS=15V, ID=250mA 100 - - mS
IGSS Gate Body Leakage VGS= ±20V , VDS=0V - - ±10 uA
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V - - 1 uA
VGS=10V, ID=500mA - - 3
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=200mA - - 4
Ω
Dynamic
Qg Total Gate Charge ID=200mA , VDS=15V
VGS=4.5V - - 0.8 nC
Td(on) Turn-on Time - - 20
Td(off) Turn-off Time
VDD=30V , RL=150Ω,
ID=200mA , VGEN=10V
RG=10Ω - - 40
nS
Ciss Input Capacitance - - 35
Coss Output Capacitance - - 10
Crss Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz - - 5
pF
Source-Drain Diode
Symbol Parameter Limit Min. Typ. Max. Unit
VSD Diode Forward Voltage IS=200mA, VGS=0V - 0.82 1.3 V
Notes：
1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t ≦ 5sec.
N-Channel Power MOSFET
–
ESD
LT2N7002E
03
Rev 0. Nov. 2007
Typical Characteristics (TJ =25℃ Noted)
N-Channel Power MOSFET
–
ESD
LT2N7002E
04
Rev 0. Nov. 2007
MILLIMETERS
DIM MIN MAX
A 2.70 3.1
B 1.20 1.6
C 0.9 1.3
D 0.35 0.50
G 1.70 2.10
H 0.013 0.15
J 0.085 0.2
K 0.45 0.7
L 0.89 1.02
S 2.20 2.80
V 0.45 0.60
SOT-23 Package Outline
Body Marking Code
K 7 2
