2006-12-01
Page 1
Rev. 1.3
BSS119
SIPMOS Small-Signal-Transistor
Product Summary
V
DS
100 V
R
DS(on)
6Ω
I
D
0.17 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
sSH
Type Package Pb-free Tape and Reel Information
BSS119 PG-SOT23 Yes L6327: 3000 pcs/reel
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.17
0.13
A
Pulsed drain current
T
A
=25°C
I
D puls
0.68
Reverse diode dv/dt
I
S
=0.17A, V
DS
=80V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
A
=25°C
P
tot
0.36 W
Operating and storage temperature T
j
,
T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
2006-12-01
Page 2
Rev. 1.3
BSS119
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - ambient
at minimal footprint R
thJS
- - 350 K/W
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250µA
V
(BR)DSS
100 - - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=50µA
V
GS(th)
1.3 1.8 2.3
Zero gate voltage drain current
V
DS
=100V, V
GS
=0, T
j
=25°C
V
DS
=100V, V
GS
=0, T
j
=150°C
I
DSS
-
-
0.05
0.5
0.1
5
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
- 10 100 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.13 A
R
DS(on)
- 4.9 10 Ω
Drain-source on-state resistance
V
GS
=10V, I
D
=0.17A
R
DS(on)
- 3.4 6
2006-12-01
Page 3
Rev. 1.3
BSS119
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.13A
0.08 0.17 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 60 78 pF
Output capacitance C
- 8.6 11.2
Reverse transfer capacitance C
rss
- 3.1 4.1
Turn-on delay time t
d(on)
V
DD
=50V, V
GS
=10V,
I
D
=0.17A, R
G
=6Ω
- 2.7 4 ns
Rise time t
r
- 3.1 4.6
Turn-off delay time t
d(off)
- 9.3 14
Fall time t
f
- 27 40
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=80V, I
D
=0.17A
- 0.08 0.12 nC
Gate to drain charge Q
gd
- 0.76 1.1
Gate charge total Q
gV
DD
=80V, I
D
=0.17A,
V
GS
=0 to 10V
- 1.67 2.5
Gate plateau voltage V
(plateau)
V
DD
=80V, I
D
= 0.17 A
- 3.4 - V
Reverse Diode
Inverse diode continuous
forward current I
ST
A
=25°C
- - 0.17 A
Inv. diode direct current, pulsed
I
SM
- - 0.68
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.8 1.2 V
Reverse recovery time t
rr
V
R
=50V, I
F=
l
S
,
di
F
/dt=100A/µs
- 21.7 32.5 ns
Reverse recovery charge Q
rr
- 10 15 nC
2006-12-01
Page 4
Rev. 1.3
BSS119
1 Power dissipation
P
tot
= f (
T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
BSS119
P
tot
2 Drain current
I
D
= f (
T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
A
0.18
BSS119
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSS119
I
D
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 240.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSS119
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2006-12-01
Page 5
Rev. 1.3
BSS119
5 Typ. output characteristic
I
D
= f (
V
DS
)
parameter: T
j
= 25 °C, V
GS
0 0.5 1 1.5 2
V
3
V
DS
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
A
0.34
I
D
10V
7V
6V
5V
4.8V
4.6V
4V
3.8V
3.4V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 °C,
V
GS
0 0.04 0.08 0.12 0.16 0.2 0.24 0.28
A
0.34
I
D
0
1
2
3
4
5
6
7
8
9
10
Ω
12
R
DS(on)
3.4V
3.8V
4V
4.6V
4.8V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: T
j
= 25 °C
0 0.8 1.6 2.4 3.2
V
4.4
V
GS
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
A
0.34
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.04 0.08 0.12 0.16 0.2 0.24 0.28
A
0.34
I
D
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
S
0.3
g
fs
2006-12-01
Page 6
Rev. 1.3
BSS119
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.17 A,
V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
2
4
6
8
10
12
14
16
18
20
Ω
24
BSS119
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=50µA
-60 -20 20 60 100
°C
160
T
j
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
V
2.6
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0, f=1 MHz, T
j
= 25 °C
0 5 10 15 20
V
30
V
DS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-3
10
-2
10
-1
10
0
10
A
BSS119
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2006-12-01
Page 7
Rev. 1.3
BSS119
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
0 0.4 0.8 1.2 1.6 2
nC
2.6
Q
G
0
2
4
6
8
10
12
V
16
BSS119
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
-60 -20 20 60 100
°C
180
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
BSS119
V
(BR)DSS
2006-12-01
Page 8
Rev. 1.3
BSS119
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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