2N3773
NPN Silicon
Power Transistors
Features
• Used in power switching circuits such as relay or solenoid drivers
• With TO-3 package
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 140 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 7.0 V
ICP Peak Collector Current 20 A
ICCollector Current 10 A
P
CCollector power dissipation 100 W
TJJunction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=100mAdc, IB=0)
140 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=140Vdc, IE=0)
--- 2.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, I
C=0)
--- 5.0 mAdc
ICEO Collector-Emitter Cutoff Voltage
(V CE=120mAdc, IB=0 )
--- 10 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(I
C=8.0Adc, VCE=4.0Vdc)
10 60 ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=4.0Adc, I
B=400mAdc)
--- 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=8.0Adc,VCE=4.0Vdc)
--- 2.2 Vdc
TO-3
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
H
V
U
L
GB
Q
1
2
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3 2007/10/12
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
MCC
Revision: 3 2007/10/12
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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