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' #"& POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state-of-the-art die dedicated to the electronic ballast ("light ballast") and power supply applications. * Improved Global Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching -- No Coil Required in Base Circuit for Fast Turn-Off (No Current Tail) * Full Characterization at 125_C * Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions * Two Package Choices: Standard TO-220 or Isolated TO-220 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIII III IIIIIII IIIIIIIIIIIIIIIIIIIII IIII III IIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII IIII III IIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol MJE18204 MJF18204 Unit Collector-Emitter Voltage VCEO 600 Vdc Collector-Base Voltage VCBO 1200 Vdc Collector-Emitter Voltage VCES 1200 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 5 10 Adc Base Current -- Continuous -- Peak (1) IB IBM 2 4 Adc RMS Isolation Voltage (2) (for 1 sec, R.H. 30%) TC = 25C Per Figure 22 Per Figure 23 Per Figure 24 *Total Device Dissipation @ TC = 25C *Derate above 25_C Operating and Storage Temperature VISOL1 VISOL2 VISOL3 PD TJ, Tstg 75 0.6 4500 3500 1500 Volts 35 0.28 Watt W/_C - 65 to 150 CASE 221A-06 TO-220AB _C THERMAL CHARACTERISTICS Rating Symbol MJE18204 MJF18204 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient RJC RJA 1.65 62.5 3.55 62.5 _C/W Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL 260 _C CASE 221D-02 TO-220 FULLPACK (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Designer's and SWITCHMODE are trademarks of Motorola, Inc. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIII III IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIII III IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO 600 660 VCEO(sus) VCER(sus) 550 600 630 700 Collector-Base Breakdown Voltage (ICBO = 1 mA, IE = 0) VCBO 1200 1300 Vdc Emitter-Base Breakdown Voltage (IEBO = 1 mA, IC = 0) VEBO 10 12.9 Vdc OFF CHARACTERISTICS Collector-Emitter Voltage (IC = 1 mA, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 200 mA, L = 25 mH, R = 2 ) Vdc Vdc Collector Cutoff Current (VCE = 600 V, IB = 0) Collector Cutoff Current (VCE = 550 V, IB = 0) @ TC = 25C @ TC = 125C ICEO 200 2000 Adc Collector Cutoff Current (VCE = Rated VCES, VBE = 0) @ TC = 25C @ TC = 125C @ TC = 125C ICES 100 500 100 Adc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO 100 Adc Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO 100 Adc Collector Cutoff Current (VCE = 1000 V, VBE = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) VBE(sat) Vdc 0.83 0.92 1.1 1.25 @ TC = 25C @ TC = 125C 0.3 0.7 1 1.25 @ TC = 25C @ TC = 125C 0.3 0.8 0.6 1.25 VCE(sat) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) Vdc hFE DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) 18 @ TC = 25C @ TC = 125C 10 8 13 (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 5 4 8 6 -- (IC = 5 mAdc, VCE = 5 Vdc) @ TC = 25C @ TC = 125C 10 25 33 -- 13 MHz (IC = 1 Adc, VCE = 1 Vdc) 35 -- @ TC = 25C @ TC = 125C 23 22 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Input Capacitance (VEB = 8 Vdc) fT Cob 200 pF Cib 2000 pF DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 2 IC = 2 Adc IB1 = 660 mAdc VCC = 300 V @ 3 s IC = 2 Adc IB1 = 0.4 Adc VCC = 300 V @ 3 s @ TC = 25C VCE(dsat) 2.5 @ TC = 125C 7.5 @ TC = 25C 7 @ TC = 125C 15 V Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-on Time Turn-off Time Turn-on Time Turn-off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc @ TC = 25C ton 105 175 ns @ TC = 25C toff 1.75 2.5 s IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc @ TC = 25C ton 95 200 ns @ TC = 25C toff 3.5 4.5 s 150 ns @ TC = 25C td 70 IC = 0.7 Adc, IB1 = 50 mAdc IB2 = 0.4 Adc VCC = 125 Vdc PW = 70 s tr 210 400 ns ts 0.9 1.2 s tf 275 450 ns Turn-on Time Turn-off Time @ TC = 25C SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time @ TC = 25C @ TC = 125C tf 110 95 175 ns @ TC = 25C @ TC = 125C ts 1.35 1.9 2 s Crossover Time @ TC = 25C @ TC = 125C tc 150 115 250 ns Fall Time @ TC = 25C @ TC = 125C tf 120 180 200 ns @ TC = 25C @ TC = 125C ts 1.9 2.35 2.75 s @ TC = 25C @ TC = 125C tc 190 180 300 ns @ TC = 25C tf 185 300 ns @ TC = 25C ts 4 5 s @ TC = 25C tc 350 500 ns Storage Time Storage Time IC = 1 Adc IB1 = 0.1 Adc IB2 = 0.5 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 1 Adc Crossover Time Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc Motorola Bipolar Power Transistor Device Data 3 TYPICAL STATIC CHARACTERISTICS 100 100 10 TJ = 25C TJ = 125C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C VCE = 1 V TJ = - 20C 1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 TJ = - 20C 1 0.01 10 Figure 1. DC Current Gain @ 1 Volt 10 2 VCE = 5 V TJ = 25C VCE , VOLTAGE (VOLTS) TJ = 125C hFE , DC CURRENT GAIN 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volts 100 10 VCE = 3 V TJ = 25C TJ = 25C TJ = - 20C 4A 3A 1 2A 1.5 A IC = 1 A 1 0.01 0 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 100 1000 IB, BASE CURRENT (mA) Figure 4. Collector Saturation Region Figure 3. DC Current Gain @ 5 Volts 10 1.5 1 VBE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) IC/IB = 10 IC/IB = 5 0.1 TJ = 125C TJ = 25C 0.01 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector-Emitter Saturation Voltage 4 10000 10 1 TJ = - 20C 0.5 TJ = 25C TJ = 125C 0 0.01 IC/IB = 5 IC/IB = 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base-Emitter Saturation Region Motorola Bipolar Power Transistor Device Data 10 TYPICAL STATIC CHARACTERISTICS 10000 1600 1400 IC/IB = 10 1200 1000 Cib (pF) t, TIME (ns) C, CAPACITANCE (pF) TJ = 25C f(test) = 1 MHz Cob (pF) 100 1000 IC/IB = 5 800 600 TJ = 125C TJ = 25C 400 IB1 = IB2 VCC = 300 V PW = 20 s 200 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 0 100 0.5 Figure 7. Capacitance 4.5 5 Figure 8. Resistive Switching, ton 8 6 TJ = 125C TJ = 25C 7 6 TJ = 125C TJ = 25C IB1 = IB2 VCC = 300 V PW = 20 s 5 IC/IB = 5 t, TIME (ns) t, TIME ( s) 2 2.5 3 3.5 4 1.5 IC, COLLECTOR CURRENT (AMPS) 1 5 4 3 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 4 IC/IB = 5 3 IC/IB = 10 2 IC/IB = 10 1 2 0.5 1 1.5 2 2.5 3 3.5 4 IC, COLLECTOR CURRENT (AMPS) 4.5 5 0.5 Figure 9. Resistive Switching, toff 2 2.5 1.5 IC, COLLECTOR CURRENT (AMPS) 3 3.5 Figure 10. Inductive Storage Time, tsi 6 1500 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 1000 t, TIME (ns) t si , STORAGE TIME (s) 1 4 TJ = 125C TJ = 25C tc tfi tc 500 IC = 2 A 3 3 5 tfi TJ = 125C TJ = 25C 7 11 9 hFE, FORCED GAIN 13 Figure 11. Inductive Storage Time, tsi (hFE) Motorola Bipolar Power Transistor Device Data 15 0 0 1 2 IC, COLLECTOR CURRENT (AMPS) 3 Figure 12. Inductive Switching, tc & tfi @ IC/IB = 5 5 TYPICAL STATIC CHARACTERISTICS 1100 680 900 800 tc 700 t, TIME (ns) t fi , FALL TIME (ns) TJ = 125C TJ = 25C IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H 1000 600 500 400 300 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H 480 TJ = 125C TJ = 25C IC = 2 A IC = 1 A 280 tfi 200 100 80 1 2 3 IC, COLLECTOR CURRENT (AMPS) 0 5 3 4 Figure 13. Inductive Switching, tc & tfi @ IC/IB = 10 11 9 hFE, FORCED GAIN 13 15 Figure 14. Inductive Fall Time 1400 1200 TJ = 125C TJ = 25C 1000 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A TJ = 25C 1300 1200 BVCER (VOLTS) t c , CROSSOVER TIME (ns) 7 800 600 BVCER (VOLTS) @ 10 mA 1100 1000 900 800 400 IC = 1 A BVCER(sus) @ 200 mA 700 600 200 3 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 10 15 14 100 RBE () Figure 16. BVCER = f (RBE) Figure 15. Inductive Crossover Time IC, COLLECTOR CURRENT (AMPS) 6 1 s 10 5 ms 1 ms 10 s 1 MJE18204-DC EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 0.1 MJF18204-DC 0.01 TC 125C GAIN 5 LC = 4 mH 5 4 3 2 -5 V 1 -1.5 V 0V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 17. Forward Bias Safe Operating Area 6 1000 400 600 800 500 700 900 1000 1100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Reverse Bias Switching Safe Operating Area Motorola Bipolar Power Transistor Device Data 1200 TYPICAL STATIC CHARACTERISTICS POWER DERATING FACTOR 1.0 SECOND BREAKDOWN DERATING 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 Figure 19. Forward Bias Power Derating 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 19 is based on T C = 25C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figures 21 and 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse-biased safe operating area (Figure 17). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES) 10 VCE 9 dyn 1 s IC 90% IC 8 dyn 3 s tfi tsi 7 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 s 2 IB 90% IB1 1 2 1 3 s 0 TIME Figure 20. Dynamic Saturation Voltage Measurements Motorola Bipolar Power Transistor Device Data 0 3 4 5 6 8 7 TIME Figure 21. Inductive Switching Measurements 7 TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES) Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 F MTP8P10 100 3W 150 3W MTP8P10 RB1 MPF930 MUR105 Iout MPF930 +10 V A 50 RB2 MJE210 COMMON MTP12N10 150 3W 500 F 1 F -Voff IC PEAK VCE PEAK VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA 8 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 Motorola Bipolar Power Transistor Device Data TYPICAL THERMAL RESPONSE (IB1 = IB2 FOR ALL CURVES) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 10 RJC(t) = r(t) RJC RJC = 1.65C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 t, TIME (ms) Figure 22. Typical Thermal Response (ZJC(t)) for MJE18204 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 P(pk) 0.1 0.1 t1 0.05 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 RJC(t) = r(t) RJC RJC = 3.55C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE 0.1 1 10 100 1000 10000 100000 t, TIME (ms) Figure 23. Typical Thermal Response (ZJC(t)) for MJF18204 Motorola Bipolar Power Transistor Device Data 9 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107 MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107 MIN 0.110 MIN Figure 24. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 25. Clip Mounting Position for Isolation Test Number 2 Figure 26. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 27a. Screw-Mounted Figure 27b. Clip-Mounted Figure 27. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 10 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS B -T- F SEATING PLANE C T 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. S A Q 1 2 3 H DIM A B C D F G H J K L N Q R S T U V Z U K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y -T- -B- F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D Motorola Bipolar Power Transistor Device Data 11 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 12 Motorola Bipolar Power Transistor Device Data *MJE18204/D* MJE18204/D