SMD Schottky Barrier Rectifiers
Reverse Voltage: 200 Volts
Forward Current: 10 Amp
RoHS Device
Page 1
REV:A
Features
-Low power loss, High efficiency.
-High current capability, low VF.
Mechanical data
-Case: Packed with FRP substrate and epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free), solderable per
MIL-STD-750, method 2026.
CDBZ310200-HF
QW-JB047 Comchip Technology CO., LTD.
V
200
VRRM
°C
TJ, TSTG
Operating and storage temperature range
Peak surgeforward current (8.3ms single half sine-wave)
Parameter Symbol
Rating
Unit
0.01
Repetitive peak reverse current
Forward voltage (NOTE 1)
Parameter Conditions Min. Typ.
Max.
Unit
IF = 10 A
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (at TA=25°C unless otherwise noted)
A
170IFSM
A
10
IF(AV)
Average forward current
Repetitive peak reverse voltage
°C/W
Thermal resistance
Junction to ambient (NOTE 2) 60
-55 to +150
IRRM
VF
Symbol
RθJA
V
0.84
-Lead less chip form, no lead damage.
Halogen free
-Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 .
°C/W
Junction to lead (NOTE 2) 22
RθJL
VR = Max. VRRM
0.90
0.10 mA
Company reserves the right to improve product design , functions and reliability without notice.
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C.B. with x 14mm copper pad areas.14
TA= 25°C
TA= 125°C 50
°C/W
Junction to case (NOTE 2) 20
RθJC
Circuit Diagram
LEFT PIN
RIGHT PIN
BOTTOMSIDE
HEAT SINK
TO-277(Z3)
Dimensions in inches and (millimeter)
0.085(2.15)
0.073(1.85)
Top View Bottom View
0.163(4.15)
0.152(3.85)
0.187(4.75)
0.175(4.45)
0.132(3.35)
0.120(3.05)
0.061(1.55)
0.049(1.25)
0.047(1.20)
0.035(0.90)
0.045(1.15)
0.033(0.85)
0.053(1.35)
0.041(1.05)
-
-
- -
-
-
-
-
-
-
0.262(6.65)
0.250(6.35)
- Weight: 0.08 grams (approx).