MBR60100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier FEATURES * Power pack * Guardring for overvoltage protection TO-220AB * Low power losses, high efficiency * Low forward voltage drop * High forward surge capability * High frequency operation * Solder dip 260 C, 40 s 1 2 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2 x 30 A Case: TO-220AB VRRM 100 V Epoxy meets UL 94 V-0 flammability rating IFSM 350 A Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test VF at IF = 30 A 0.64 V TJ max. 175 C Package TO-220AB Diode variations Common cathode Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR60100CT UNIT Maximum repetitive peak reverse voltage VRRM 100 V Working peak reverse voltage VRWM 100 V VDC 100 V Maximum DC blocking voltage Maximum average forward rectified current total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) 60 30 A IFSM 350 Peak repetitive reverse current per diode at tp = 2 s, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 s waveform) ERSM 25 mJ Non-repetitive avalanche energy per diode at 25 C, IAS = 1.0 A, L = 40 mH Voltage rate of change (rated VR) Operating junction and storage temperature range A EAS 20 mJ dV/dt 10 000 V/s TJ, TSTG -65 to +175 C Revision: 17-Aug-15 Document Number: 88892 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR60100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 30 A Instantaneous forward voltage per diode IF = 60 A (1) IF = 30 A IF = 60 A Reverse current per diode (2) VR = 100 V SYMBOL TJ= 25 C VF TJ = 125 C TJ = 25 C IR TJ = 125 C TYP. MAX. 0.78 0.82 UNIT 0.92 1 0.64 0.69 0.78 0.83 8 100 A 8.5 20 mA V Notes (1) Pulse test: 300s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR60100CT UNIT RJC 0.5 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR60100CT-E3/45 2.068 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TC = 25 C unless otherwise noted) 400 60 Average Forward Current (A) Average Forward Current (A) 70 50 40 30 20 10 0 300 200 100 0 0 25 50 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 17-Aug-15 Document Number: 88892 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR60100CT www.vishay.com Vishay General Semiconductor 10 000 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 C TJ = 125 C 1 TJ = 25 C 0.1 1000 100 0.01 0 0.2 0.4 0.6 0.8 0.1 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 100 000 TJ = 175 C 10 000 TJ = 150 C 1000 TJ = 125 C 100 10 1 TJ = 25 C 0.1 0.01 0.1 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331(8.40) TYP. 0.634 (16.10) 0.618 (15.70) PIN 1 2 3 0.118 (3.00) TYP. 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) Revision: 17-Aug-15 Document Number: 88892 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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